A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector
|
|
- Jeremy Robbins
- 5 years ago
- Views:
Transcription
1 049 SCIENCE CHINA Physics, Mechanics & Astronomy May 2010 Vol.53 No.5: doi: /s z A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector GAO Bo *, LIU HongXia, KUANG QianWei, ZHOU Wen & CAO Lei School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi an , China Received October 21, 2009; accepted February 5, 2010 The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet (UV) detector is calculated by solving the photo-carrier continuity equation, and the photo-carrier screening electric field is calculated according to Poisson s equation. Using the numerical calculation method, a novel model of photo-carrier screening effect is presented. Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed. The influence of incident power, bias voltage and carrier life time on the photo-carrier screening effect is also analyzed. It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone, the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage. Besides, the incident light duration has strong impact on the photo-carrier screening effect. GaN, p-i-n, ultraviolet detector, photo-carrier screening effect PACS: Fd, Bt, Gz 1 Introduction As one of typical wide band-gap semiconductor, GaN material has the characteristics of large energy gap, high electron saturation velocity and small dielectric constant. It has wide application in the area of power device, microwave device and optoelectronic device. The large energy gap of GaN and its binary alloys AlGaN make it a good material for manufacturing the photo detector in the nm wavelength range, i.e. in the UV light spectrum. So, GaN-based detector is a natural solar-blind UV detector used for body detecting and tracing, space UV communication and ozone monitoring. Compared with other structure detector, the performance of GaN-based detectors with p-i-n [1,2] and MSM [3,4] structures is impressive, such as low dark current and high spectral responsivity. Unfortunately, most research work in this area mainly focuses on decreasing the dark *Corresponding author ( bobbygoff@foxmail.com) current [5,6] and enhancing the spectral responsivity [7,8] by improving and optimizing the fabrication process of devices, and only a few studies investigate the physical mechanism of the device performance improvement. The influence of p-gan layer depth on the performance of GaN-based p-i-n UV detector has been discussed in the ref. [9], which indicates the performance of GaN-based p-i-n UV detector can be improved by optimizing its working conditions. In the application of photo detecting, the photocarrier screening effect affects the performance of GaNbased p-i-n UV detector, which has not been found in the published papers. This paper investigates the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector by solving the photo-carrier continuity equation in the depletion region and adopting the numerical calculation method. A novel model of photo-carrier screening effect is presented. Furthermore, the influence of photo-carrier screening effect on the distribution of photo-carrier density
2 794 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No. 5 in the depletion region of p-i-n detector is discussed, and the influence of incident power, bias voltage and carrier life time on the photo-carrier screening effect is analyzed. 2 A physical model of device 2.1 Device structure The device structure of GaN-based p-i-n UV detector is shown in Figure 1(a). In the structure, the carrier concentration in the p-gan and n-gan region is and cm 3 respectively. The electron concentration in the i-gan region is cm 3, and the width of the i-layer is 0.3 μm. Charges distribution in the depletion region is shown in Figure 1(b). Based on the Poisson s equation, the distribution of electric field in the depletion region of ideal abrupt p-i-n junction is calculated for the applied voltage of 5 V, which is shown in Figure 2. It shows the depletion region is mainly concentrated in the intrinsic layer, and the electric field is not a constant, which is very important in the calculation. 2.2 Distribution of photo-carrier density The incident light is used to irradiate the photo detector. If the photon energy of incident light is higher than the energy gap of GaN, the electron-hole pairs will be generated in the detector. These electron-hole pairs drift to the two sides of the depletion region immediately because of the high electric field. This means there is some distribution for the photo-generated electron near the n-gan region and photo-generated hole near the p-gan region in the depletion region, which can be obtained by solving the photo-carrier continuity equation in the depletion region. In one dimension, the photo-generated hole and photogenerated electron continuity equation are presented in eqs. (1) and (2), respectively. px ( ) 1 Jp( x) = Gx ( ) Up( x), t q x nx ( ) 1 J ( x) = Gx U x+ t q x n ( ) n ( ), where p(x) and n(x) are the photo-generated holes density and photo-generated electrons density respectively. G(x) and U(x) are the generation rate and recombination rate for photo-carriers in the depletion region respectively. J p (x) and J n (x) are the current density of photo-generated holes and the photo-generated electrons respectively. Based on the drift-diffusion transport model in one dimension, the current density of photo-generated holes and the photo-generated electrons are shown in eqs. (3) and (4). (1) (2) d p( x) J p( x) = qp( x) μpe qdp, (3) dx d nx ( ) Jn( x) = qn( x) μne+ qdn, (4) dx Figure 1 (a) A schematic diagram of device structure of the GaN-based p-i-n UV detector; (b) charges distribution in the depletion region. where μ p and μ n are the hole mobility and electron mobility respectively. D p and D n are the diffusion coefficient of hole and electron respectively. E is the electric field in the depletion region. And the generation rate G(x) and recombination rate U(x) of photo-carriers in the depletion region are shown in eqs. (5) (7). P (1 ) opt R Gx ( ) = αexp( αx), Ah ν (5) p( x) Up ( x) =, (6) τ p nx ( ) Un ( x) =, (7) τ n Figure 2 Distribution of the electric field in the depletion region. where P opt is the incident optical power, R is the reflectivity of device surface, A is the active area, hν is the photon energy, α is the optical absorption coefficient of GaN material, and τ p and τ n is the lifetime of photo-generated hole and photo-generated electron, respectively. The value of these parameters in calculation is shown in Table 1.
3 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No Table 1 The parameter values in calculation Parameter Value Unit Parameter Value Unit P opt 10 W A 0.01 cm 2 α cm 1 hv ev τ p =τ n 0.2 ns R Mobility modeling As a photovoltaic device, GaN-based p-i-n UV detector usually works with reverse bias voltage. Because of the high electric field stress, the photo-carriers in the depletion region always drift with the saturation velocity. Indeed, the model of carrier mobility for GaN material is very complicated especially for high electric field. With Monte Carlo calculation [10], fitting the data gotten from the experimental test, the model can be obtained. In the paper, the mobility model presented by Kabra et al. [11] and Bhapkar et al. [12] is adopted, as shown in eq. (8). μ0, 0 < E < EL, 1 + E / EC μ( E) = α1e + α2 + α3 / E, EL < E < ET, β1e + β2 + β3 / E, ET < E < EH, [ γ1exp( γ2e) + γ 3 / E, E > EH, where E H represents the high electric field, μ 0 represents the mobility of low electric field which is equal to 650 cm 2 /V, E C represents the critical electric field, E L represents the low electric field, and E T represents the threshold electric field. α 1, α 2, α 3, β 1, β 2, β 3, γ 1, γ 2 and γ 3 are different fitting parameters respectively. According to the refs. [13 16], let μ p =μ n /25. Table 2 shows the parameters value in eq. (8). Figure 3 shows the variation of electron drift velocity with the applied electric field. The whole region is divided into four parts. For the low electric field region, the electric field is below E L, and V s increases quickly when the applied electric field increases. For the medium electric field region, the electric field is between E L and E T. V s increases slowly. V s reaches the maximum when the electric field is equal to the threshold field (E T ). For the high electric field region, the electric field is greater than E T and less than E H, and V s decreases with increasing electric field, which causes the negative differential mobility. For the very high electric (8) field region, the electric field is greater than E H. V s decreases slowly and settles down to a constant saturation velocity in this region. 2.4 Photo-carrier screening effect When the incident light irradiates the device, the distribution of photo-generated holes density p(x) and photo-generated electrons density n(x) can be obtained by solving the photo-carrier continuity Equation (1) and Equation (2), respectively. Based on the Poisson s equation, the photo-carrier can generate an additional electric field impeding the photo-carriers drift. This paper uses the photo-generated screening electric field to show the impediment action, which is shown in eq. (9). x V q Esc ( x) = = ( p( x) n( x))d x, x (9) εε 0 0 where E sc is the photo-generated screening electric field generated by the photo-carriers in the depletion region, and ε 0 and ε r is the absolute and relative dielectric constant respectively. Figure 3 Electrons drift velocity versus the electric field. r Table 2 The parameter values in eq. (8) Parameter Value Unit Parameter Value Unit μ cm 2 /V α cm/s E c V/cm β cm 3 /V 2.s E L V/cm β cm 2 /V.s E T V/cm β cm/s E H V/cm γ cm/s α cm 3 /V 2.s γ cm/s α cm 2 /V.s γ cm/s
4 796 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No. 5 So, when the incident light irradiates, the total electric field in the depletion region is the sum of build-in electric field E in, the applied electric field E a and the photo-generated screening electric field E sc, as shown as follows: 3 Numerical calculation E = E + E + E. (10) in a sc When the GaN-based p-i-n UV detector works with bias voltage of 5 V and incident optical power of 10 W, the distribution of photo-carrier density in the depletion region can be calculated according to eqs. (1) and (2), and then the photo-generated screening electric field can be calculated according to eq. (9). And now the total electric field that acts on the photo-carriers is the sum of the build-in electric field, the applied electric field and the photo-generated screening electric field. However, the total electric field also affects the distribution of photo-carriers in reverse. Therefore, a new distribution of photo-carriers will form, and a new total electric field will be obtained. By repeating it again and again, a steady distribution of photo-carriers and a constant photo-generated screening electric field will form finally in the depletion region of GaN-based p-i-n UV detector, and this process is expressed by the numerical method in calculation, as shown in Figure 4. 4 Results and discussion The photo-carrier screening effect taken into consideration, the total electric field E, the photo-generated screening electric field E sc and the photo-carrier density in the depletion region are calculated according to the numerical calculation method in Figure 4. The results are shown in Figures 5 7, respectively. Figure 4 A flow chart of the numerical calculation method with photo-carrier screening effect. Figure 5 (a) Distribution of total electric field E; (b) average total electric field E varied with time.
5 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No From Figure 5(a), the total electric field in the depletion region of detector with incident light has not changed considerably compared with that without incident light, and it changes slightly with the incident duration, shown clearly in Figure 5(b). To be more specific, the average total electric field in the depletion region decreases with the incident duration influenced by the photo-carrier screening effect, and it reaches the saturation value of kv/cm after the incident duration of 50 ps. According to eq. (9), the photo-generated screening electric field is calculated, which is shown in Figure 6. Figure 6 shows the photo-generated screening electric field changes with the incident duration. The photo-generated screening electric field increases quickly with the incident duration at the beginning, it increases slightly after 25 ps, and finally reaches saturation. The photo-generated screening electric field in the depletion region is not a constant. It increases quickly from 0 to 50 nm in Figure 6, and then slowly reaches the maximum in some location. It decreases slightly when the location gets to the boundary of the depletion region. The location in the depletion region corresponding to the maximum of photo-generated screening electric field shifts to the right with the incident duration until the photo-generated screening electric field reaches the saturation. And this phenomenon results from the change of photo-carrier density in the depletion region with the incident duration, which is shown in Figure 7. Figure 7(a) shows the photo-generated holes are accumulated near the p-gan layer in the depletion region, the photo-generated electrons are accumulated near the n-gan layer in the depletion region, and the holes accumulation is greater than that of the electrons, because the hole mobility is much smaller than that of electron mobility. Therefore, a screening electric field with an opposite direction of the original electric field takes shape because of the accumulation of photo-carriers, which impedes the photo-carriers drift and diffusion. With the irradiation continuing, the photo-carriers accumulation becomes stronger and stronger, until the photo-generated holes density saturates after the Figure 7 (a) Distribution of photo-carrier density; (b) distribution of net photo-carrier density. incident duration of 8 ps, while the photo-generated electron density saturates after 50 ps. With the incident duration, the location where the photo-generated holes density equal to the photo-generated electrons density in the depletion region, shifts to the right gradually until the photo-generated holes density saturates, as shown in Figure 7(b). Therefore, the photo-carrier screening effect has a more profound impact on the photo-generated holes than photo-generated electrons. Furthermore, the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is discussed. It is well known that the response time is an important parameter for the detector used in the high speed application. For p-i-n UV detector, the response time mainly depends on the transit time τ drift, the diffusion time τ diff for photo-carriers outside the depletion region diffusing to the depletion region and the RC time constant τ RC. Because the diffusion time is very short, the response time of GaN-based p-i-n UV detector is defined as follows: 2 2 w 2 τ = τdrift + τrc = + ( RC), Vs 2 (11) Figure 6 The photo-generated screening electric field E sc. where w is the width of depletion region, V s is the carrier drift velocity, R is the total resistance of 50 Ω in circuit, and C is the capacitance of 4 ff in circuit. From the above discussion, the total electric field in the depletion region is not a constant, rather a function of the location. So, the carrier drift velocity in the depletion region is also a function of the location. The average carrier drift velocity is used to calcu-
6 798 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No. 5 late the response time of detector, which is shown in eq. (12). V s = w+ xn xp μ( xex ) ( )dx x + w+ x p n. (12) Based on eqs. (11) and (12), the average drift velocity Vs and the response time τ of GaN-based p-i-n UV detector are calculated after the consideration of the photo-carrier screening effect, shown in Figures 8(a) and (b) respectively. Figure 8(s) shows, under the above working condition, the average electron drift velocity increases nonlinearly with the incident duration because of the photo-carrier screening effect, and reaches the saturation of cm/s after the incident duration of 50 ps. Figure 8(b) shows, influenced by the photo-carrier screening effect, the response time decreases from to ps after the incident duration of 50 ps. So, there is a fine tuning effect for photo-carrier screening effect to electron drift velocity and response time of detector, which is influenced by the bias voltage and incident power, as shown in Figures 9 and 10. Figure 9 shows, with the bias voltage of 0 and 2 V, the average electron drift velocity decreases and the response time increases because of the photo-carrier screening effect, and the influence is stronger with the bias voltage of 0 V than 2 V. For the bias voltage of 4 and 6 V, the average electron drift velocity increases and the response time decreases influenced by the photo-carrier screening effect, and the influence increases for the bias voltage of 4 V. Therefore, the influence of photo-carrier screening effect on the electron drift velocity and response time is non-monotonic for the GaN-based p-i-n UV detector, which results from the non-monotonic influence of electric field on the electron saturation velocity for the GaN material. According to the Figure 8 (a) Average electrons drift velocity varied with the incident duration; (b) response time of the detector varied with the incident duration. electron mobility model for the GaN material, the electron saturation velocity increases when the total electric field in the depletion region is close to 230 kv/cm. The electron drift velocity decreases and the response time increases because of the photo-carrier screening effect when the bias voltage is in the range of 0 to 2.3 V. The influence is opposite when the bias voltage is in the range of 2.3 V to the reverse breakdown voltage. When the bias voltage is equal to 2.3 V, the average electron drift velocity in the depletion region reaches the maximum, while the response time reaches the minimum. From Figure 10, the influence of photo-carrier screening effect on the electron drift velocity and response time is not obvious when the incident power is 0.1 W. The influence seems obvious when the incident power is 1 W, and the influence is very obvious when the incident power is 10 W. The photo-carrier density in the depletion region increases with the incident power increasing, which leads to the photo-generated screening electric field increasing and the influence of photo-carrier screening effect on the electron drift velocity and response time increasing. In the actual design, the quantum efficiency can be increased by improving the device structure [17], and the incident power can be increased by setting the anti-reflective layer in surface [18]. Both can increase the influence of photo-carrier screening effect on the response time of detector. The GaN material is known for its high defect concentration because of lattice mismatch and thermal mismatch [19,20] in the hetero-epitaxial growth, so the minority carrier life time is very short, which seriously affects the device performance. According to the model presented in this paper, the influence of photo-carrier screening effect on the response time with different carrier life time is discussed, which is shown in Figure 11. Under the same working condition, the shorter the minority carrier life time, the weaker the influence of the photo-carrier screening effect on the response time of detector. The decrease of the minority life time results in a quick recombination of photo-carriers, so the photo-carrier density decreases, the photo-generated screening electric field decreases, and the photo-carrier screening effect is not obvious. When the minority carrier life time is short enough, the photo-carriers recombine immediately when they are generated, and the photo-carrier screening effect disappears completely. When the minority carrier life time is large enough, the photo-carrier screening effect is very obvious. With the development of technology of hetero-epitaxial growth for the GaN material, the defect concentration in the GaN material is less, and the carrier life time is enlarged. So, the photo-carrier screening effect can meet the requirement of high speed application in GaN-based p-i-n UV detector. From the above calculation results, the influence of photo-carrier screening effect on the response time of detector becomes steady after the incident duration of 50 ps. However, in actual applications, the incident light generally
7 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No Figure 9 The influence of bias voltage on the photo-carrier screening effect. (a) Electron drift velocity; (b) response time of the detector. is transient light or frequency-modulated pulse light, so the influence of photo-carrier screening effect on the response time is discussed, which is shown in Figure 12. Figure 12 shows, with the transient light duration down
8 800 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No. 5 to 10 from 60 ps, the influence of photo-carrier screening effect on the response time weakens gradually, and the influence disappears gradually after a period of time. When the transient light duration is shorter than 50 ps, the photo-carrier screening effect is not obvious. When the transient light duration is larger than 50 ps, the photo-carrier screening effect becomes very obvious. 5 Conclusions Figure 10 The influence of incident power on the photo-carrier screening effect. (a) Electron drift velocity; (b) response time of the detector. By solving the photo-carrier continuity equation in the depletion region and adopting numerical calculation method, a novel model of photo-carrier screening effect is presented. Based on this model, the influence of photo-carrier screening effect on the response time of GaN-based p-i-n UV detector is discussed in different working conditions. The calculation results show the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotonic, and the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the bias voltage. Furthermore, the influence of photo-carrier screening effect on the performance of detector is very obvious for great incident power or long carrier life time, and the duration of transient light has a major impact on the photo-carrier screening effect. This work was supported by the National Natural Science Foundation of China (Grant Nos and ), the Cultivation Fund of the Key Scientific and Technical Innovation Project, and the Ministry of Education of China Program (Grant No ). Figure 11 The influence of carrier life time on the photo-carrier screening effect. Figure 12 Influence of transient light on the photo-carrier screening effect. 1 Smith G M, Boutros K S, Phanse V M. Visible-blind GaN photodiodes. IEEE Lasers and Electro-Optics Society Annual Meeting. 1998, 1: Chang P C, Yu C L, Chang S J, et al. Low-noise and high-detectivity GaN-based UV photodiode with a semi-insulating Mg-doped GaN cap layer. IEEE Sensors J, 2007, 7(9): Chen C H, Chang S J, Su Y K, et al. GaN metal-semiconductor-metal UV photodetectors with transparent Indium-Tin-Oxide schottky contacts. IEEE Photonics Technol Lett, 2001, 13(8): Li J L, Donaldson E R, Hsiang T Y. Very fast metal-semiconductor-metal UV photodetectors on GaN with submicron finger width. IEEE Photonics Technol Lett, 2003, 15(8): Carrano J C, Li T, Brown D L, et al. Low dark current pin UV photodetectors fabricated on GaN grown by metal organic chemical vapour deposition. Electron Lett, 1998, 34(7): Dobrzański L, Strupinski W. On charge transport and low-frequency noise in the GaN p-i-n diode. IEEE J Quantum Electron, 2007, 43(2): Chang P C, Yu C L, Chang S J. Low-noise and high-detectivity GaN-based UV photodiode with a semi-insulating Mg-doped GaN cap layer. IEEE Sens J, 2007, 7(9): Shen S C, Zhang Y, Dongwon Y, et al. Performance of deep UV GaN avalanche photodiodes grown by MOCVD. IEEE Photonics Technol Lett, 2007, 19(21): Zhou M, Zhao D G. Effect of p-gan layer thickness on the performance of p-i-n sructure GaN UV photodetectors. Acta Phys Sin, 2008, 57(7): Farahmand M, Garetto C, Bellotti E, et al. Monte carlo simulation of electron transport in the III-nitride wurtzite phase materials system:
9 GAO Bo, et al. Sci China Phys Mech Astron May (2010) Vol. 53 No Binaries and terniaries. IEEE Trans Electron Devices, 2001, 48(3): Kabra S, Kaur H, Haldar S, et al. An analytical model for GaN MESFET s using new velocity-field dependence. Phys Stat Sol C, 2006, 3(6): Bhapkar U V, Shur M S. Monte Carlo calculation of velocity-field characteristics of wurtzite GaN. J Appl Phys, 1997, 82(4): Bhatttacharyya A, Li W, Cahalu J, et al. Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy. Appl Phys Lett, 2004, 85(21): Kumakura K, Makimoto T. Carrier transport mechanisms of Pnp Al- GaN/GaN heterojunction bipolar transistors. Appl Phys Lett, 2008, 92: Rodrigues C G, Femandez J T L, Leite J R, et al. Hole mobility in zincblend c-gan. J Appl Phys, 2004, 95(9): Kim K S, Cheong M G, Hong C H, et al. Hole transport in Mg-doped GaN epiayers grown by metalorganic chemical vapor deposition. Appl Phys Lett, 2000, 76(9): Ting L, Carrano J C, Campbell J C, et al. Analysis of external quantum efficiencie of GaN homojunction p-i-n UV photodetectors. IEEE J Quantum Electron, 1999, 35(8): Chang S J, Lee M L, Sheu J K, et al. GaN metal-semiconductor-metal photodetectors with low-temperature-gan cap layers and ITO metal contacts. IEEE Electron Device Lett, 2003, 24(4): Tuomisto F, Paskova T, Kröger R, et al. Defect distribution in a-phane GaN on Al 2 O 3. Appl Phys Lett, 2007, 90: Lin J C, Su Y K, Chang S J, et al. GaN p-i-n photodetectors with an LT-GaN inter layer. IET Optoelectron, 2008, 2(2): 59 62
Multiband GaN/AlGaN UV Photodetector
Vol. 110 (2006) ACTA PHYSICA POLONICA A No. 2 Proceedings of the XXXV International School of Semiconducting Compounds, Jaszowiec 2006 Multiband GaN/AlGaN UV Photodetector K.P. Korona, A. Drabińska, K.
More informationLecture 15: Optoelectronic devices: Introduction
Lecture 15: Optoelectronic devices: Introduction Contents 1 Optical absorption 1 1.1 Absorption coefficient....................... 2 2 Optical recombination 5 3 Recombination and carrier lifetime 6 3.1
More informationSchottky Diodes (M-S Contacts)
Schottky Diodes (M-S Contacts) Three MITs of the Day Band diagrams for ohmic and rectifying Schottky contacts Similarity to and difference from bipolar junctions on electrostatic and IV characteristics.
More informationOPTI510R: Photonics. Khanh Kieu College of Optical Sciences, University of Arizona Meinel building R.626
OPTI510R: Photonics Khanh Kieu College of Optical Sciences, University of Arizona kkieu@optics.arizona.edu Meinel building R.626 Announcements Homework #6 is assigned, due May 1 st Final exam May 8, 10:30-12:30pm
More informationStudying of the Dipole Characteristic of THz from Photoconductors
PIERS ONLINE, VOL. 4, NO. 3, 8 386 Studying of the Dipole Characteristic of THz from Photoconductors Hong Liu, Weili Ji, and Wei Shi School of Automation and Information Engineering, Xi an University of
More informationEE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors
EE 5344 Introduction to MEMS CHAPTER 5 Radiation Sensors 5. Radiation Microsensors Radiation µ-sensors convert incident radiant signals into standard electrical out put signals. Radiant Signals Classification
More informationNaser M. Ahmed *, Zaliman Sauli, Uda Hashim, Yarub Al-Douri. Abstract
Int. J. Nanoelectronics and Materials (009) 89-95 Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al 0. Ga 0.89 N, Al 0.03 Ga 0.97 N, and GaN by optical
More informationPhotosynthesis & Solar Power Harvesting
Lecture 23 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationElectron leakage effects on GaN-based light-emitting diodes
Opt Quant Electron (2010) 42:89 95 DOI 10.1007/s11082-011-9437-z Electron leakage effects on GaN-based light-emitting diodes Joachim Piprek Simon Li Received: 22 September 2010 / Accepted: 9 January 2011
More informationSupplementary Figure 1. Supplementary Figure 1 Characterization of another locally gated PN junction based on boron
Supplementary Figure 1 Supplementary Figure 1 Characterization of another locally gated PN junction based on boron nitride and few-layer black phosphorus (device S1). (a) Optical micrograph of device S1.
More informationSemiconductor Physical Electronics
Semiconductor Physical Electronics Sheng S. Li Department of Electrical Engineering University of Florida Gainesville, Florida Plenum Press New York and London Contents CHAPTER 1. Classification of Solids
More informationInvestigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN Alloys
Vol. 113 (2008) ACTA PHYSICA POLONICA A No. 3 Proceedings of the 13th International Symposium UFPS, Vilnius, Lithuania 2007 Investigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN
More informationTheoretical Study on Graphene Silicon Heterojunction Solar Cell
Copyright 2015 American Scientific Publishers All rights reserved Printed in the United States of America Journal of Nanoelectronics and Optoelectronics Vol. 10, 1 5, 2015 Theoretical Study on Graphene
More informationA. K. Das Department of Physics, P. K. College, Contai; Contai , India.
IOSR Journal of Applied Physics (IOSR-JAP) e-issn: 2278-4861.Volume 7, Issue 2 Ver. II (Mar. - Apr. 2015), PP 08-15 www.iosrjournals.org Efficiency Improvement of p-i-n Structure over p-n Structure and
More informationAn Overview of the analysis of two dimensional back illuminated GaAs MESFET
An Overview of the analysis of two dimensional back illuminated GaAs MESFET Prof. Lochan Jolly*, Ms. Sonia Thalavoor** *(A.P- Department of Electronics & Telecommunication, TCET, Mumbai Email: lochan.jolly@thakureducation.org)
More informationCourse overview. Me: Dr Luke Wilson. The course: Physics and applications of semiconductors. Office: E17 open door policy
Course overview Me: Dr Luke Wilson Office: E17 open door policy email: luke.wilson@sheffield.ac.uk The course: Physics and applications of semiconductors 10 lectures aim is to allow time for at least one
More informationPHOTOVOLTAICS Fundamentals
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
More informationSingle Photon detectors
Single Photon detectors Outline Motivation for single photon detection Semiconductor; general knowledge and important background Photon detectors: internal and external photoeffect Properties of semiconductor
More informationNonlinear Saturation Behaviors of High-Speed p-i-n Photodetectors
JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 18, NO. 2, FEBRUARY 2000 203 Nonlinear Saturation Behaviors of High-Speed p-i-n Photodetectors Yong-Liang Huang and Chi-Kuang Sun, Member, IEEE, Member, OSA Abstract
More informationA study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation
Journal of Engineering Science and Technology Review 2 (1) (2009) 157-164 Research Article JOURNAL OF Engineering Science and Technology Review www.jestr.org A study of the silicon Bulk-Barrier Diodes
More informationStructural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection
Journal of the Korean Physical Society, Vol. 56, No. 2, February 2010, pp. 672 676 Structural Optimization of Silicon Carbide PIN Avalanche Photodiodes for UV Detection Ho-Young Cha School of Electronic
More informationEE 5611 Introduction to Microelectronic Technologies Fall Tuesday, September 23, 2014 Lecture 07
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Tuesday, September 23, 2014 Lecture 07 1 Introduction to Solar Cells Topics to be covered: Solar cells and sun light Review on semiconductor
More informationTraps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy
Traps in MOCVD n-gan Studied by Deep Level Transient Spectroscopy and Minority Carrier Transient Spectroscopy Yutaka Tokuda Department of Electrical and Electronics Engineering, Aichi Institute of Technology,
More informationThe effect of light illumination in photoionization of deep traps in GaN MESFETs buffer layer using an ensemble Monte Carlo simulation
International Journal of Physical Sciences Vol. 6(2), pp. 273-279, 18 January, 2011 Available online at http://www.academicjournals.org/ijps ISSN 1992-1950 2011 Academic Journals Full Length Research Paper
More informationECE-305: Spring 2018 Exam 2 Review
ECE-305: Spring 018 Exam Review Pierret, Semiconductor Device Fundamentals (SDF) Chapter 3 (pp. 75-138) Chapter 5 (pp. 195-6) Professor Peter Bermel Electrical and Computer Engineering Purdue University,
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationSimulation of GaN-based Light-Emitting Devices
Simulation of GaN-based Light-Emitting Devices Joachim Piprek Solid-State Lighting and Display Center Materials Department, College of Engineering University of California, Santa Barbara, CA 93106 piprek@ieee.org
More informationFrequency dispersion effect and parameters. extraction method for novel HfO 2 as gate dielectric
048 SCIENCE CHINA Information Sciences April 2010 Vol. 53 No. 4: 878 884 doi: 10.1007/s11432-010-0079-8 Frequency dispersion effect and parameters extraction method for novel HfO 2 as gate dielectric LIU
More informationLEC E T C U T R U E R E 17 -Photodetectors
LECTURE 17 -Photodetectors Topics to be covered Photodetectors PIN photodiode Avalanche Photodiode Photodetectors Principle of the p-n junction Photodiode A generic photodiode. Photodetectors Principle
More informationjunctions produce nonlinear current voltage characteristics which can be exploited
Chapter 6 P-N DODES Junctions between n-and p-type semiconductors are extremely important foravariety of devices. Diodes based on p-n junctions produce nonlinear current voltage characteristics which can
More information16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion
More informationNumerical model of planar heterojunction organic solar cells
Article Materials Science July 2011 Vol.56 No.19: 2050 2054 doi: 10.1007/s11434-011-4376-4 SPECIAL TOPICS: Numerical model of planar heterojunction organic solar cells MA ChaoZhu 1 PENG YingQuan 12* WANG
More informationSolar cells operation
Solar cells operation photovoltaic effect light and dark V characteristics effect of intensity effect of temperature efficiency efficency losses reflection recombination carrier collection and quantum
More informationComparison of Ge, InGaAs p-n junction solar cell
ournal of Physics: Conference Series PAPER OPEN ACCESS Comparison of Ge, InGaAs p-n junction solar cell To cite this article: M. Korun and T. S. Navruz 16. Phys.: Conf. Ser. 77 135 View the article online
More informationCHAPTER 4: P-N P N JUNCTION Part 2. M.N.A. Halif & S.N. Sabki
CHAPTER 4: P-N P N JUNCTION Part 2 Part 2 Charge Storage & Transient Behavior Junction Breakdown Heterojunction CHARGE STORAGE & TRANSIENT BEHAVIOR Once injected across the junction, the minority carriers
More informationSimulation of AlGaN/Si and InN/Si ELECTRIC DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC DEVICES Zehor Allam 1, Abdelkader Hamdoune 2, Chahrazed Boudaoud 3, Asmaa Amrani 4,Aicha Soufi 5,Zakia Nakoul 6 Unity of Research Materials and Renewable Energies,
More informationEE 6313 Homework Assignments
EE 6313 Homework Assignments 1. Homework I: Chapter 1: 1.2, 1.5, 1.7, 1.10, 1.12 [Lattice constant only] (Due Sept. 1, 2009). 2. Homework II: Chapter 1, 2: 1.17, 2.1 (a, c) (k = π/a at zone edge), 2.3
More informationChapter 7. Solar Cell
Chapter 7 Solar Cell 7.0 Introduction Solar cells are useful for both space and terrestrial application. Solar cells furnish the long duration power supply for satellites. It converts sunlight directly
More informationIntroduction to Semiconductor Integrated Optics
Introduction to Semiconductor Integrated Optics Hans P. Zappe Artech House Boston London Contents acknowledgments reface itroduction Chapter 1 Basic Electromagnetics 1 1.1 General Relationships 1 1.1.1
More informationSemiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
More informationM R S Internet Journal of Nitride Semiconductor Research
Page 1 of 6 M R S Internet Journal of Nitride Semiconductor Research Volume 9, Article 7 The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors
More informationComputational Study of Amplitude-to-Phase Conversion in a Modified Unitraveling Carrier Photodetector
Computational Study of Amplitude-to-Phase Conversion in a Modified Unitraveling Carrier Photodetector Volume 9, Number 2, April 2017 Open Access Yue Hu, Student Member, IEEE Curtis R. Menyuk, Fellow, IEEE
More informationPhotonic Communications Engineering Lecture. Dr. Demetris Geddis Department of Engineering Norfolk State University
Photonic Communications Engineering Lecture Dr. Demetris Geddis Department of Engineering Norfolk State University Light Detectors How does this detector work? Image from visionweb.com Responds to range
More informationSheng S. Li. Semiconductor Physical Electronics. Second Edition. With 230 Figures. 4) Springer
Sheng S. Li Semiconductor Physical Electronics Second Edition With 230 Figures 4) Springer Contents Preface 1. Classification of Solids and Crystal Structure 1 1.1 Introduction 1 1.2 The Bravais Lattice
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor p-n junction diodes. Reading: Kasap ,
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor p-n junction diodes Reading: Kasap 6.1-6.5, 6.9-6.12 Metal-semiconductor contact potential 2 p-type n-type p-type n-type Same semiconductor
More informationSupplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection
Supplementary material for High responsivity mid-infrared graphene detectors with antenna-enhanced photo-carrier generation and collection Yu Yao 1, Raji Shankar 1, Patrick Rauter 1, Yi Song 2, Jing Kong
More informationMicrowave Absorption by Light-induced Free Carriers in Silicon
Microwave Asorption y Light-induced Free Carriers in Silicon T. Sameshima and T. Haa Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan E-mail address: tsamesim@cc.tuat.ac.jp
More informationNormally-Off GaN Field Effect Power Transistors: Device Design and Process Technology Development
Center for High Performance Power Electronics Normally-Off GaN Field Effect Power Transistors: Device Design and Process Technology Development Dr. Wu Lu (614-292-3462, lu.173@osu.edu) Dr. Siddharth Rajan
More informationPhotodetectors Read: Kasip, Chapter 5 Yariv, Chapter 11 Class Handout. ECE 162C Lecture #13 Prof. John Bowers
Photodetectors Read: Kasip, Chapter 5 Yariv, Chapter 11 Class Handout ECE 162C Lecture #13 Prof. John Bowers Definitions Quantum efficiency η: Ratio of the number of electrons collected to the number of
More informationAppendix 1: List of symbols
Appendix 1: List of symbols Symbol Description MKS Units a Acceleration m/s 2 a 0 Bohr radius m A Area m 2 A* Richardson constant m/s A C Collector area m 2 A E Emitter area m 2 b Bimolecular recombination
More informationLect. 10: Photodetectors
Photodetection: Absorption => Current Generation h Currents Materials for photodetection: E g < h Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche
More informationFor the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
More information3.1 Introduction to Semiconductors. Y. Baghzouz ECE Department UNLV
3.1 Introduction to Semiconductors Y. Baghzouz ECE Department UNLV Introduction In this lecture, we will cover the basic aspects of semiconductor materials, and the physical mechanisms which are at the
More informationSegmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA.
Segmented 1.55um Laser with 400% Differential Quantum Efficiency J. Getty, E. Skogen, L. Coldren, University of California, Santa Barbara, CA. Abstract: By electrically segmenting, and series-connecting
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationMSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University
MSE 310/ECE 340: Electrical Properties of Materials Fall 2014 Department of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
More informationLab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency
Lab #5 Current/Voltage Curves, Efficiency Measurements and Quantum Efficiency R.J. Ellingson and M.J. Heben November 4, 2014 PHYS 4580, 6280, and 7280 Simple solar cell structure The Diode Equation Ideal
More informationNUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION
International Journal of Science, Environment and Technology, Vol. 1, No 2, 80-87, 2012 NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION H. Arabshahi,
More informationElectronic Devices & Circuits
Electronic Devices & Circuits For Electronics & Communication Engineering By www.thegateacademy.com Syllabus Syllabus for Electronic Devices Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport,
More informationFebruary 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC
FUNDAMENTAL PROPERTIES OF SOLAR CELLS February 1, 2011 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals of
More informationEffects of current crowding on light extraction efficiency of conventional GaN-based lightemitting
Effects of current crowding on light extraction efficiency of conventional GaN-based lightemitting diodes Bin Cao, 1 Shuiming Li, 1 Run Hu, 2 Shengjun Zhou, 3 Yi Sun, 1 Zhiying Gan, 4 and Sheng Liu 4*
More informationElectronic Supplementary Information. Recombination kinetics in silicon solar cell under low-concentration: Electroanalytical
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics. This journal is the Owner Societies 2014 Electronic Supplementary Information Recombination kinetics in silicon solar cell
More informationTitle: Ultrafast photocurrent measurement of the escape time of electrons and holes from
Title: Ultrafast photocurrent measurement of the escape time of electrons and holes from carbon nanotube PN junction photodiodes Authors: Nathaniel. M. Gabor 1,*, Zhaohui Zhong 2, Ken Bosnick 3, Paul L.
More informationPhotodetector Basics
Photodetection: Absorption => Current Generation hυ Currents Materials for photodetection: t ti E g
More informationPhotodetector. Prof. Woo-Young Choi. Silicon Photonics (2012/2) Photodetection: Absorption => Current Generation. Currents
Photodetection: Absorption => Current Generation h Currents Materials for photodetection: E g < h Various methods for generating currents with photo-generated carriers: photoconductors, photodiodes, avalanche
More information1 Name: Student number: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND. Fall :00-11:00
1 Name: DEPARTMENT OF PHYSICS AND PHYSICAL OCEANOGRAPHY MEMORIAL UNIVERSITY OF NEWFOUNDLAND Final Exam Physics 3000 December 11, 2012 Fall 2012 9:00-11:00 INSTRUCTIONS: 1. Answer all seven (7) questions.
More informationELECTRONIC DEVICES AND CIRCUITS SUMMARY
ELECTRONIC DEVICES AND CIRCUITS SUMMARY Classification of Materials: Insulator: An insulator is a material that offers a very low level (or negligible) of conductivity when voltage is applied. Eg: Paper,
More informationCOURSE OUTLINE. Introduction Signals and Noise Filtering Sensors: PD5 Avalanche PhotoDiodes. Sensors, Signals and Noise 1
Sensors, Signals and Noise 1 COURSE OUTLINE Introduction Signals and Noise Filtering Sensors: PD5 Avalanche PhotoDiodes Avalanche Photo-Diodes (APD) 2 Impact ionization in semiconductors Linear amplification
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and M-K Lee 1. The purest semiconductor crystals it is possible
More informationPhotovoltaic cell and module physics and technology. Vitezslav Benda, Prof Czech Technical University in Prague
Photovoltaic cell and module physics and technology Vitezslav Benda, Prof Czech Technical University in Prague benda@fel.cvut.cz www.fel.cvut.cz 1 Outlines Photovoltaic Effect Photovoltaic cell structure
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An n-type sample of silicon has a uniform density N D = 10 16 atoms cm -3 of arsenic, and a p-type silicon sample has N A = 10 15 atoms cm -3 of boron. For each
More informationNew solid state photomultiplier. Dmitry Shushakov and Vitaly Shubin
New solid state photomultiplier Dmitry Shushakov and Vitaly Shubin P. N. Lebedev Physical Institute, Department of Solid State Physics, Moscow, Russia. ABSTRACT The physical principles of a new high-sensitive
More informationThree-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical. Interconnects
Three-Dimensional Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical eptember 2011 Interconnects Leonid Tsybeskov Department of Electrical and Computer Engineering New Jersey Institute
More informationChapter 4. Photodetectors
Chapter 4 Photodetectors Types of photodetectors: Photoconductos Photovoltaic Photodiodes Avalanche photodiodes (APDs) Resonant-cavity photodiodes MSM detectors In telecom we mainly use PINs and APDs.
More informationLecture 15 - The pn Junction Diode (I) I-V Characteristics. November 1, 2005
6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 15-1 Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. I-V characteristics
More informationSolar Cell Materials and Device Characterization
Solar Cell Materials and Device Characterization April 3, 2012 The University of Toledo, Department of Physics and Astronomy SSARE, PVIC Principles and Varieties of Solar Energy (PHYS 4400) and Fundamentals
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and cross-sectional area 100µm 2
More informationTheory of Electrical Characterization of Semiconductors
Theory of Electrical Characterization of Semiconductors P. Stallinga Universidade do Algarve U.C.E.H. A.D.E.E.C. OptoElectronics SELOA Summer School May 2000, Bologna (It) Overview Devices: bulk Schottky
More informationPerformance Analysis of an InGaAs Based p-i-n Photodetector
Performance Analysis of an InGaAs Based p-i-n Photodetector Diponkar Kundu 1, Dilip Kumar Sarker 2, Md. Galib Hasan 3, Pallab Kanti Podder 4, Md. Masudur Rahman 5 Abstract an InGaAs based p-i-n photodetector
More informationPaper Review. Special Topics in Optical Engineering II (15/1) Minkyu Kim. IEEE Journal of Quantum Electronics, Feb 1985
Paper Review IEEE Journal of Quantum Electronics, Feb 1985 Contents Semiconductor laser review High speed semiconductor laser Parasitic elements limitations Intermodulation products Intensity noise Large
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationComputer modelling of Hg 1 x Cd x Te photodiode performance
Computer modelling of Hg 1 x Cd x Te photodiode performance Robert Ciupa * Abstract A numerical technique has been used to solve the carrier transport equations for Hg 1-x Cd x Te photodiodes. The model
More informationCharacteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
034 Chin. Phys. B Vol. 19, No. 5 2010) 057303 Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures Liu Hong-Xia ), Wu Xiao-Feng ), Hu Shi-Gang
More informationThermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method
CHINESE JOURNAL OF PHYSICS VOL. 48, NO. 3 June 2010 Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method H. R. Alaei, 1 H. Eshghi, 2 R. Riedel, 3 and D.
More informationA Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET) Model Including a Schottky Diode Model
Journal of the Korean Physical Society, Vol. 55, No. 3, September 2009, pp. 1162 1166 A Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET) Model Including a Schottky Diode Model Y. S.
More informationLecture 5 Junction characterisation
Lecture 5 Junction characterisation Jon Major October 2018 The PV research cycle Make cells Measure cells Despair Repeat 40 1.1% 4.9% Data Current density (ma/cm 2 ) 20 0-20 -1.0-0.5 0.0 0.5 1.0 Voltage
More informationSchottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 Metal-Semiconductor Contact The work function
More informationOptically-Pumped Ge-on-Si Gain Media: Lasing and Broader Impact
Optically-Pumped Ge-on-Si Gain Media: Lasing and Broader Impact J. Liu 1, R. Camacho 2, X. Sun 2, J. Bessette 2, Y. Cai 2, X. X. Wang 1, L. C. Kimerling 2 and J. Michel 2 1 Thayer School, Dartmouth College;
More informationSILICON AVALANCHE PHOTODIODES ARRAY FOR PARTICLE DETECTOR: MODELLING AND FABRICATION
SILICON AVALANCHE PHOTODIODES ARRAY FOR PARTICLE DETECTOR: ODELLING AND FABRICATION Alexandre Khodin, Dmitry Shvarkov, Valery Zalesski Institute of Electronics, National Academy of Sciences of Belarus
More informationTime-dependent Monte Carlo Simulation
Computational Electronics Group University of Illinois Time-dependent Monte Carlo Simulation Umberto Ravaioli Beckman Institute and Department of Electrical and Computer Engineering University of Illinois
More informationLecture 12. Semiconductor Detectors - Photodetectors
Lecture 12 Semiconductor Detectors - Photodetectors Principle of the pn junction photodiode Absorption coefficient and photodiode materials Properties of semiconductor detectors The pin photodiodes Avalanche
More informationUltrafast Lateral Photo-Dember Effect in Graphene. Induced by Nonequilibrium Hot Carrier Dynamics
1 Ultrafast Lateral Photo-Dember Effect in Graphene Induced by Nonequilibrium Hot Carrier Dynamics Chang-Hua Liu, You-Chia Chang, Seunghyun Lee, Yaozhong Zhang, Yafei Zhang, Theodore B. Norris,*,, and
More informationUNIT I: Electronic Materials.
SIDDHARTH INSTITUTE OF ENGINEERING & TECHNOLOGY :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: SEMICONDUCTOR PHYSICS (18HS0851) Course & Branch: B.Tech
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor p-n junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
More informationAlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
PRAMANA c Indian Academy of Sciences Vol. 79, No. 1 journal of July 2012 physics pp. 151 163 AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers T R LENKA
More informationAvailable online at Energy Procedia 00 (2009) Energy Procedia 2 (2010) E-MRS Spring meeting 2009, Symposium B
Available online at www.sciencedirect.com Energy Procedia 00 (2009) 000 000 Energy Procedia 2 (2010) 169 176 Energy Procedia www.elsevier.com/locate/procedia www.elsevier.com/locate/procedia E-MRS Spring
More informationHigh-Speed Quadratic Electrooptic Nonlinearity in dc-biased InP
Vol. 107 (2005) ACTA PHYSICA POLONICA A No. 2 Proceedings of the 12th International Symposium UFPS, Vilnius, Lithuania 2004 High-Speed Quadratic Electrooptic Nonlinearity in dc-biased InP L. Subačius a,,
More informationChapter 1 Overview of Semiconductor Materials and Physics
Chapter 1 Overview of Semiconductor Materials and Physics Professor Paul K. Chu Conductivity / Resistivity of Insulators, Semiconductors, and Conductors Semiconductor Elements Period II III IV V VI 2 B
More informationET3034TUx Utilization of band gap energy
ET3034TUx - 3.3.1 - Utilization of band gap energy In the last two weeks we have discussed the working principle of a solar cell and the external parameters that define the performance of a solar cell.
More informationR. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition. Figures for Chapter 6
R. Ludwig and G. Bogdanov RF Circuit Design: Theory and Applications 2 nd edition Figures for Chapter 6 Free electron Conduction band Hole W g W C Forbidden Band or Bandgap W V Electron energy Hole Valence
More information