Features A, -25 V. R DS(ON) Symbol Parameter Ratings Units
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1 FG34P igital FET, P-Channel July FG34P General escription This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor s proprietary, high cell density, MOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as.5 volts. Applications Power Management Load switch Signal switch Features -.65 A, -5 V. R S(ON) =. V GS = -4.5 V R S(ON) =.5 V GS = -.7 V. Very low gate drive requirements allowing direct operation in 3V cirucuits (V GS(th) <.5 V). Gate-Source Zener for ES ruggedness (>6 kv Human Body Model). Compact industry standard SC7-6 surface mount package. S 6 5 SC7-6 G 3 4 Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V SS rain-source Voltage -5 V V GSS Gate-Source Voltage ±8 V I rain Current - Continuous (Note a) -.65 A - Pulsed -.8 P Power issipation for Single Operation (Note a).75 W (Note b).48 T J, T stg Operating and Storage Junction Temperature Range -55 to +5 C ES Electrostatic ischarge Rating MIL-ST-883 kv 6. Human Body Model (pf/5 Ohm) Thermal Characteristics R θ JA Thermal Resistance, Junction-to-Ambient (Note b) 6 C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape Width Quantity.4 FG34P 7 8mm 3 units Fairchild Semiconductor International FG34P Rev.C
2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain-source Breakdown Voltage V GS = V, I = -5 µa -5 V BVSS T J Breakdown Voltage Temperature Coefficient I = -5 µa, Referenced to 5 C I SS Zero Gate Voltage rain Current V S = - V, V GS = V - µa I GSS Gate-Body Leakage Current V GS = -8 V, V S = V - na -9 mv/ C FG34P On Characteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = -5 µa V VGS(th) T J R S(on) Gate Threshold Voltage Temperature Coefficient Static rain-source On-Resistance I = -5 µa, Referenced to 5 C V GS = -4.5 V, I = -.5 A V GS = -4.5 V, I = C V GS = -.7 V, I = -.5 A I (on) On-State rain Current V GS = -4.5 V, V S = -5 V - A g FS Forward Transconductance V S = -4.5 V, I = -.5 A.9 S ynamic Characteristics C iss Input Capacitance V S = - V, V GS = V, 63 pf C oss Output Capacitance f =. MHz 34 pf C rss Reverse Transfer Capacitance pf Switching Characteristics (Note ) t d(on) Turn-On elay Time V = -6 V, I = -.5 A, 7 ns t r Turn-On Rise Time V GS = -4.5 V, R GEN = 5 Ω 8 ns t d(off) Turn-Off elay Time 55 ns t f Turn-Off Fall Time 35 7 ns Q g Total Gate Charge V S = -5 V, I = -.5 A,..5 nc Q gs Gate-Source Charge V GS = -4.5 V.3 nc Q gd Gate-rain Charge.5 nc rain-source iode Characteristics and Maximum Ratings I S Maximum Continuous rain-source iode Forward Current -.4 A V S rain-source iode Forward V GS = V, I S = -.4 A (Note ) Voltage V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 C/W when mounted on a in pad of oz copper. b) 6 C/W when mounted on a minimum mounting pad.. Pulse Test: Pulse Width 3 µs, uty Cycle.% mv/ C Ω FG34P Rev.C
3 Typical Characteristics VGS = -4.5V -3.5V.6-4.V -3.V V -.5V -.V -.5V RS(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE VGS = -.5V -.7V -3.V -3.5V -4.V -4.5V FG34P V S, RAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics I, RAIN CURRENT (A) Figure. On-Resistance Variation with rain Current and Gate Voltage. RS(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -.5A V GS = -4.5V RS(ON), ON-RESISTANCE (OHM) T A = 5 o C T A = 5 o C I = -.33A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage V S = -5V T A = -55 o C 5 o C 5 o C -IS, REVERSE RAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C 3 4 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FG34P Rev.C
4 Typical Characteristics (continued) -VGS, GATE-SOURCE VOLTAGE (V) 5 I = -.5A V S = -5V -V 4-5V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C ISS C OSS f = MHz V GS = V C RSS V S, RAIN TO SOURCE VOLTAGE (V) FG34P Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics... R S(ON) LIMIT V GS = -4.5V SINGLE PULSE RθJA = 6 o C/W T A = 5 o C ms s s C ms ms. -V S, RAIN-SOURCE VOLTAGE (V) POWER (W) 3 SINGLE PULSE R θja= 6 o C/W 4 TA= 5 o C SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R =6 C/W θja t t T J - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient themal response will change depending on the circuit board design. FG34P Rev.C
5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT OME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST ISCLAIMER LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F
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