Hardness Assurance Issues for GaN/AlGaN HEMTs
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1 Hardness Assurance Issues for GaN/AlGaN HEMTs Dan Fleetwood Landreth Professor of Engineering Professor of EE; Professor of Physics Chair, EECS Department Co-authors: J. Chen, R. Jiang, E. X. Zhang, and R. D. Schrimpf Vanderbilt University/EECS Work at Vanderbilt supported in part by AFRL and AFOSR through the HiREV program, by DTRA through its basic research program, and by the US Department of Defense.
2 Outline Proton Irradiation Older generation HEMTs Research devices, UCSB Combined irradiation and stress Qorvo HEMTs Worst case bias = semi-on Combined irradiation and stress Newer generation HEMTs, UCSB Worst case bias = ON Significant TID effects observed
3 Typical GaN/AlGaN HEMT J. Chen, Y. S. Puzyrev, C. X. Zhang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. Kyle, and J. S. Speck, Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs, IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp (2013).
4 Proton Irradiation UCSB GaN/HEMT: All pins grounded (circa 2011 devices) 10 Ga-rich Drain Current (ma) V ds = 0.2 V L = 0.7 m W =150 m pre-irradiation data Pre 5x x x x Gate Voltage (V) J. Chen, IEEE Trans. Nucl. Sci., vol. 60, no. 6, pp (2013). Acknowledgment: S. W. Kaun, E. C. Kyle, and J. S. Speck, UCSB
5 Typical Biasing Conditions: GaN/AlGaN HEMT Drain Current (ma) Ga-rich V ds = 0.2 V L = 0.7 m W =150 m Semi-ON: High Field Lower Carrier Density pre-irradiation data Pre 5x x x x Gate Voltage (V) ON: High Current High Carrier Density OFF: High Field No Current
6 1.8 MeV Proton Irradiation GaN/AlGaN HEMTs: Qorvo, Inc. V th shift (V) Irradiation time (hours) GND OFF semi-on semi-on HC Stress without Irradiation Normalized Peak Transconductance Irradiation time (hours) GND OFF semi-on semi-on HC Stress without Irradiation Worst case: Semi-ON Proton Fluence (10 13 protons/cm 2 ) Proton Fluence (10 13 protons/cm 2 ) J. Chen, Y. S. Puzyrev, R. Jiang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, A. Arehart, S. A. Ringel, P. Saunier, and C. Lee, Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs, IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp , Dec
7 High Field Stress Qorvo Devices V th shift (V) Stress condition: V ds = 25V V gs = -2V (semi-on) Stress condition: V ds = 25V V gs = 1V (ON) Stress hours Normalized Peak Transconductance 1.04 Stress condition: Stress condition: V ds = 25V V ds = 25V 1.02 V gs = -2V (semi-on) V gs = 1V (ON) Stress hours J. Chen, et al., IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp , Dec Acknowledgments: A. Arehart, S. A. Ringel, Ohio State University P. Saunier, and C. Lee, Qorvo, Inc.
8 Combined Effects: High Field Stress and Proton Irradiation: V th Shifts Vth Shift (V) Fluence (10 13 protons/cm 2 ) HC stress on Group A Irradiation HC stress on Group B Group A: GND(A) OFF(A) semi-on(a) Group B: GND(B) OFF(B) semi-on(b) Worst-case: Combined Semi-ON Time (hours) J. Chen, et al., IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp , Dec
9 Combined Effects: High Field Stress and Proton Irradiation: G m degradation Normalized Peak Transconductance HC stress on Group A Group A: GND(A) OFF(A) semi-on(a) Group B: GND(B) OFF(B) semi-on(b) Fluence (10 13 protons/cm 2 ) Irradiation Worst-case: Combined Time (hours) HC stress on Group B Worst case: Rad Semi-ON J. Chen, et al., IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp , Dec
10 Newer UCSB Devices Proton Irradiation: GND bias R. Jiang, et al., submitted: IEEE NSREC 2016 Acknowledgment: S. W. Kaun, E. C. Kyle, and J. S. Speck, UCSB
11 Off and GND State Irradiation R. Jiang, et al., submitted: IEEE NSREC 2016
12 GND, Semi-ON, ON Irradiations Worst Case = ON Bias Stress OR Irradiation R. Jiang, et al., submitted: IEEE NSREC 2016
13 10-keV X-ray Irradiation (No displacement damage) Significant TID effects!! More visible in newer, higher quality materials R. Jiang, et al., submitted: IEEE NSREC 2016
14 Conclusions Worst-case static bias for high-field stress and irradiation of GaN/AlGaN HEMTs varies with technology. Large differences observed. Bias switching (RF) further complicates RHA. Newer technologies with lower as-processed defect densities show more TID effects. In the AlGaN? In the GaN??? e.g., due to dehydrogenation of pre-existing defects Insulating layer between gate and AlGaN?
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