Neutron Irradiation Test Results of the RH1021CMW-5 Precision 5V Reference
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1 Neutron Irradiation Test Results of the RH1021CMW-5 Precision 5V Reference 16 March 2015 Duc Nguyen, Sana Rezgui Acknowledgements The authors would like to thank the Product and Test Engineering Signal Conditioning Groups from Linear Technology for the data collection pre- and post-irradiations. Special thanks are also for Thomas Regan from University of Massachusetts, Lowell (UMASS) for the help with the neutrons irradiation tests. P a g e 1 23
2 Neutron Radiation Test Results of the RH1021CMW-5 Precision 5V Reference Part Type Tested: RH1021CMW-5 Precision 5V Reference. Traceability Information: Fab Lot# ; Wafer # 13; Assembly Lot # , D/C 1007A. Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Serial numbers 580 to 584, were placed in an anti-static bag during irradiation. Serial numbers 577 and 579 were used as control. See Appendix A for the radiation bias connection table.. Radiation Dose: Total fluence of 1E12 neutron/cm 2. Radiation Test Standard: MIL-STD-883 TM1017 Test Hardware and Software: LTX pre-rad test program: EQCM and post-rad test program: ERHC Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI. Irradiation and Test Temperature: Room temperature controlled to 24 C±6 C per MIL-STD-883 and MIL-STD-750. SUMMARY ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm 2. ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST. P a g e 2 23
3 1.0 Overview and Background Neutron particles incident on semiconductor materials lose energy along their paths. The energy loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice (displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects or broken bonds. Such defects elevate the energy level of the material and consequently change material and electrical properties. The altering energy level creates the combination of any of the following processes, thermal generation of electron-hole pairs, recombination, trapping, compensation, tunneling, affecting hence the device s basic features. Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12 neutron/cm 2. The neutron radiation test for the RH1021CMW-5 determines the change in device performance as a function of neutrons fluence. 2.0 Radiation Facility: Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265, to be 4.05E9 N/cm 2 -s (1MeV equivalent) for each irradiation step. Refer to Appendix B for the certificate of dosimetry. 3.0 Test Conditions Five samples and two control units were electrically tested at 25 C prior to irradiation. The testing was performed on the two control units to confirm the operation of the test system prior to the electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices were placed into an anti-static bag. Devices were then vertically aligned with the radiation source. The criteria to pass the neutron displacement damage test is that five irradiated samples must pass the datasheet limits. If any of the tested parameters of these five units do not meet the required limits then a failure-analysis of the part should be conducted in accordance with method 5004, MIL-STD-883, and if valid the lot will be scrapped. P a g e 3 23
4 4.0 Tested Parameters The following parameters were measured pre- and post-irradiations: - Output Voltage (V) - Output Voltage Temperature Coefficient (ppm/ C) - Line Regulation with condition 7.2V V IN 10V (ppm/v) - Line Regulation with condition 10V V IN 40V (ppm/v) - Load Regulation (Sourcing Current) (ppm/ma) - Load Regulation (Sinking Current) (ppm/ma) - Supply Current (Series Mode) (ma) Appendix C details the test conditions, minimum and maximum values at different accumulated doses. P a g e 4 23
5 5.0 Test Results All five samples passed the post-irradiation electrical tests. All measurements of the seven listed parameters in section 4.0 are within the specification limits. The used statistics in this report are based on the tolerance limits, which are bounds to gage the quality of the manufactured products. It assumes that if the quality of the items is normally distributed with known mean and known standard deviation, the two-sided tolerance limits can be calculated as follows: +K TL = mean + (K TL) (standard deviation) -K TL = mean - (K TL) (standard deviation) Where +K TL is the upper tolerance limit and -K TL is the lower tolerance limit. These tolerance limits are defined in a table of inverse normal probability distribution. However, in most cases, mean and standard deviations are unknown and therefore it is practical to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample size. The Ps90%/90% K TL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The K TL factor in this report is In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated samples. The solid lines with square symbols are the computed KTL values of five post-irradiated samples with the application of the K TL statistics. The orange solid lines with circle markers are the datasheet specification limits. The post-irradiation test limits are taken from the Linear Technology datasheet s 100 Krads(Si) specification limits. P a g e 5 23
6 V IN = 10V (V) DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluence (neutrons/cm 2 ) Specification MIN Figure 5.1 Plot of V V IN = 10V versus Total Fluence Note: the pre-irradiation +KTL average is slightly higher than the maximum limit due to small sample-size of 5 units. P a g e 6 23
7 Table 5.1: Raw data table for V OUT of pre- and post-irradiation (1E12 N/cm 2 ) Parameter V V IN = 10V Total Fluences (N/cm 2 ) Units (V) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased PASS PASS Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased PASS PASS Status (+KTL) Unbiased FAIL PASS P a g e 7 23
8 Temperature Coeff (ppm/c) DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluence (neutrons/cm 2 ) Figure 5.2: Plot of V OUT Temperature Coefficient versus Total Fluence P a g e 8 23
9 Table 5.2: Raw data table for V OUT Temperature Coefficient of pre- and post-irradiation (1E12 N/cm 2 ) Parameter V OUT Temperature Coefficient Total Fluences (N/cm 2 ) Units (PPM) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 9 23
10 Line Reg V IN = 7.2V - 10V DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluences (neutrons/cm 2 ) Figure 5.3: Plot of Line V IN = 7.2V to 10V versus Total Fluence P a g e 10 23
11 Table 5.3: Raw data table for Line V IN = 7.2V to 10V of pre- and post-irradiation (1E12 N/cm 2 ) Parameter Line V IN = 7.2V-10V Total Fluences (N/cm 2 ) Units (ppm/v) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 11 23
12 Line Reg V IN = 10V to 40V DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluences (neutrons/cm 2 ) Figure 5.4: Plot of Line V IN = 10V to 40V versus Total Fluence P a g e 12 23
13 Table 5.4: Raw data table for Line V IN = 10V to 40V of pre- and post-irradiation (1E12 N/cm 2 ) Parameter Line V IN = 10V to 40V Total Fluences (N/cm 2 ) Units (ppm/v) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX 6 7 Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 13 23
14 Load Reg (Source) (ppm/ma) DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluences (neutrons/cm 2 ) Figure 5.5: Plot of Load V IN = 10V versus Total Fluence P a g e 14 23
15 Table 5.5: Raw data table for Load Reg. (Source) of pre- and post-irradiation (1E12 N/cm 2 ) Parameter Load (Source) Total Fluences (N/cm 2 ) Units (ppm/ma) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 15 23
16 Load Reg (Sink) (ppm/ma) DDD RH1021CMW W Specification MAX 80 Ps90%/90% (+KTL) Unbiased Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluences (neutrons/cm 2 ) Figure 5.6: Plot of Load Reg (Sink) versus Total Fluence P a g e 16 23
17 Table 5.6: Raw data table for Load Reg (Sink) of pre- and post-irradiation (1E12 N/cm 2 ) Parameter Load Reg (Sink) Total Fluences (N/cm 2 ) Units (ppm/ma) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 17 23
18 V IN = 10V (ma) DDD RH1021CMW W Specification MAX Ps90%/90% (+KTL) Unbiased 0.90 Average Unbiased Ps90%/90% (-KTL) Unbiased E+11 1E E+12 Total Fluence (neutrons/cm 2 ) Figure 5.7: Plot of I V IN = 10V versus Total Fluence P a g e 18 23
19 Table 5.7: Raw data table for Supply Current of pre- and post-irradiation (1E12 N/cm 2 ) Parameter I V IN = 10V Total Fluences (N/cm 2 ) Units (ma) 0 1E Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Unbiased Specification MAX Status (Measurements) Unbiased PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 19 23
20 Appendix A Radiation Bias Connection Table Table A1: Unbiased condition Pin Function Bias 1 NC Float 2 VIN Float 3 NC Float 4 GND Float 5 TRIM Float 6 VOUT Float 7 NC Float 8 NC Float P a g e 20 23
21 Figure A1: Pin-Out P a g e 21 23
22 Appendix B P a g e 22 23
23 Appendix C Table C1: Electrical Characteristics of Device-Under-Test P a g e 23 23
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