Detection of Ionizing Radiations with Graphene Field Effect Transistors (GFET) Yong P. Chen Purdue University
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1 Detection of Ionizing Radiations with Graphene Field Effect Transistors (GFET) Yong P. Chen Purdue University IEEE NSS 10/26/2009
2 Team Members: Isaac Childres, Mike Foxe, Gabriel Lopez, Dr. Romaneh Jalilian Undergrads: John Boguscki, Caleb Roecker, Steven Schiffli Prof. Yong P. Chen (Physics/Birck) & Prof. Igor Jovanovic (Nuclear Eng) Collaborators: Prof. David Koltick Birck Nanotechnology Center (BNC) Applied Physics Laboratory Nuclear/Civil Engineering Physics Funding: NSF, DHS and DTRA
3 Introduction & Background Radiation detection has been very closely coupled with advances in semiconductors.. How Can graphene do it (well)?
4 Radiation Detection SNM/FM Radiation Sensing --- some state of art: High Resolution is Desirable HPGE (High Purity Ge) [charge collection] Superconductor TES (Transition Edge Sensor) [NOT charge collection; use a sharp feature] Can we have a sharp ~ room T that couples to radiation(effect)
5 What is Graphene Usual solid graphene papers in 2008 (electrically isolated) discovered in 2004 Building block of many carbon (nano)materials New wonder semiconductor/semimetal Amazing Electrical Properties ( post Si electronics/ Moore ) Amazing Mechanical Properties --- highest strength (~CNT) Amazing Thermal properties highest thermal conductivity Easy to make and work with (2D planar fabrication) Electrons in graphene E v F pv F ~ 1 10 kv 6 m/s Dirac equation Chiral massless fermions [QED/QCD in graphene] High conductivity/mobility (>10X room T) Low (electronic) noise Tunable (electr.) properties Exposed to environment --- excellent sensor mat. F
6 Sharp Electric Field Effect in Graphene GFET insulator graphene V gate semiconductor (doped) Dirac pt (<n>=0) p n Finite R (quantum R) Low noise High mobility (can ballistic) High speed [THz] High sensitivity [de/e<10-3 ] Bandgap eng possible all these even at 300K the sharp feature with low electrical noise room T) F. Schedin et al 2007
7 GFET for radiation sensing Graphene resistance R (kohm) R (kohm) How well can GFET detect radiation [rare events] -3x Electric Field (V/m) -3x Electric Field (V/m) Sensitivity/energy resolution? V gate insulator semiconductor graphene Small E field (undoped/~insulating) V gate insulator semiconductor (conductive) graphene Large E field radiation Graphene a highly sensitive to detect local Efield-chage [single molecule sensitivity] Vgate tunable - sensitivity and resolution NOT relying on collecting/drifting ionizded charges; appearance of ionized charges changes electric field sensing Efield intrinsically faster than sensing drfited/collected charges can work with variety of absorber substrates for gamma/neutron interaction; thin insulator layer [eg. Narrow bandgap semiconductors]
8 Preliminary Results V gate insulator semiconductor absorber graphene GFET based radiation sensor (eg. sharp change of resistivity due to change of electrical field caused by ionizing radiation) Modeling of radiation-material interaction; Modeling of possible radiation detection schemes using graphene-based sensors Fabricating/Developing/Characterizing suitable graphene-based materials and devices Proof of concept experiments with graphene field effect transistors: radiation responses; local electric field sensitivity Physico-chemical changes: studies of effects of charged-particles irradiation on graphene and GFET
9 Modeling: radiation-substrate (absorber) interaction MCNP and MCNP-Polimi modeling of interaction of ionizing radiation (gamma, neutrons) with absorber materials: various semiconductors (Si, Ge, InSb), polystyrene etc. Compton electron transport through substrate (CASINO) recently also started using Geant4 (M. Foxe et al) Geant4 CASINO
10 Local electric field effect COMSOL Modeling: GFET response to radiation ionized charges Gabe Lopez et al., R (kohm) x Electric Field (V/m) V gate insulator semiconductor absorber graphene Simplified model with straight tracks --- good for neutrons? Ionized/conducting region
11 GFET response to radiation ionized charges: Position Sensitive
12 Detection schemes; Sensitivity and Energy Resolution radiation GFET absorber Also want large, high quality graphene to cover all generated charges Various possible detections schemes under investigation: remote detection FET (better for straight tracks/neutrons?) drift charges, but do not collect them use graphene (as effective low noise amplifier to read out the charges (for gammas?) or a trans-photoconductor.
13 Material/Device Fabrication of Graphene and GFET exfoliation (scotch tape) Graphene on doped Si with 300 nm oxide E-beam lithography e - e - Lithography Nanodevices Develop PMMA Cr/Au evaporation Photo by Sambandamurthy Doped Si Lift off SiO 2 PMMA Cr/Au
14 How to identify graphene light Ni et al nm Optical microscopy -- seeing is believing Raman Spectroscopy (also sensitive to defects in graphene) Many layers Gupta et al 2007 Resistance (ohms) 30x Rxx Rxy (h/e 2 )/14 Quantum Hall Effect (magnetoresistance) (h/e 2 )/6 (h/e 2 )/10 (h/e 2 )/2 I.Childres et al (see poster 3) Gate Voltage (V) 20
15 GFET Characterization S D (grounded) Semiconductor=Si Insulator=300nm SiO2 V gate insulator semiconductor (doped) graphene Want: high-mobilty graphene [sharp FET] 2.0 G 500x mv R (kohm) I DS Dirac 3 mv 2 mv mv -3x Electric Field (V/m) V GS
16 Large-scale Graphene Available by CVD 4-in graphene! Q. Yu (UH) Quantum Hall Effect h/2e 2 H. Cao et all. arxiv: (2009)
17 Fabricating Graphene on other absorbers: Ge (w/t 30nm germanium oxide)
18 Proof of Concept: Photo-actuated GFET Radiation [this case, laser] (doped) chopper Also tried photo-resistor similar to photodiode Also tried MOSFET G.Lopez et al. Experiments currently underway with undoped Si-substrate hospital X-ray source 82mC gamma source Voltage (volt) Photodiode Vds of GFET at 20HZ Vds of GFET at 100HZ Vds of GFET at Ids=10uA -40x time (sec)
19 Local Field Effect: by Side Gate Graphene is sensitive to local electric field side gate J. Tian et al.,
20 Local Electric Field Effect by AFM tip R(kohm) R (Kohm) m Vbg = 0V Location1 Location2 Location3 100 nm Vbg = 11V location1 location2 location V top gate (V) V top gate (V) R(Kohm) R (Kohm) back gate voltage (V) Vbg = 13 V Location1 Location2 Location V top gate (V) R (Kohm) R (Kohm) Electric feild (V/m) 300x x Distance (m) Vbg = 16 V location1 location2 location V top gate (V) Vbg=20V location1 location2 location V top gate (V) Graphene SiO 2 p-type Si Apply I ds Read V ds V bg V tg R. Jalilian et al. (2009)
21 Charged-particles irradiation: e-beam effect of energetic charged particles (eg. electrons) also relevant for (long term) reliability of GFET radiation sensors 30keV electron beam I= 0.15nA; Time=5mins; Expose area: 50um x 50um Estimated dose: e-/nm 2 e- beam adds to graphene negative (n-) charges Raman spectra [cf also Baladin APL 09] (I.Childres et al)
22 Charged-particles irradiation: O + ions Resistance (ohms) Before Exposure (4-terminal) s exposure (3-terminal) s exposure (3-terminal) Gate Voltage (V) Gate Voltage (V) Intensity (offset) D Raman spectra Increasing exposure O+ ions add to graphene positive (p+) charges Defect creation studied also by: Raman spectroscopy AFM (atomic force microscopy) time-dependent behavior I. Childres et al., in preparation These studies also relevant for rad-hard graphene electronics! O+ ions generated in a microwave plasma chamber Wavenumber (cm-1) 3000
23 Summary Graphene sensors for SNM radiation ( /n) detection compatible with a wide variety of absorber materials NOT drifting/collecting charges R based on sharp field effect exciting promises: high speed, high sensitivity, excellent energy resolution, room T potentially opening a new approach for radiation detection Initial results --- focus on proof-of-concept Modeling/design of graphene FET radiation sensor MCNP/CASINO modeling of /n-substrate interaction COMSOL modeling: demonstrate GFET response to radiations Fabricating/testing graphene & GFET (graphene field effect transistor) high quality graphene material fabricated global and local electric field effect demonstrated demonstrated laser-irradiation actuated GFET charged-particle irradiation on graphene/gfet effects of O+ ions & e- beams demonstrated reliability of GFET radiation sensors (E) V gate insulator semiconductor absorber On-going/future work fabricate/test GFET on a variety of absorbers: Si, Ge, InSb, CZT, radiation response experiments gamma rays neutrons alpha/beta etc graphene radiation detector: study energy resolution, sensitivity, speed etc. detector design, architecture and integration graphene composite (physico-chemical approach) graphene
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