Continuous-Time Switch Family

Size: px
Start display at page:

Download "Continuous-Time Switch Family"

Transcription

1 FEATURES AN BENEFITS AEC-Q1 automotive qualified Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed at end-of-line for optimum performance Robust EMC performance High ES rating Regulator stability without a bypass capacitor Packages: 3-pin SOT23W (suffix LH) LH: A111, A112, A113, A114, and A116 Not to scale UA: A111, A112, A113, and A114 3-pin SIP (suffix UA) UA: A116 ESCRIPTION The Allegro A111-A114 and A116 Hall-effect switches are next generation replacements for the popular Allegro 312x and 314x lines of unipolar switches. The A11x family, produced with BiCMOS technology, consists of devices that feature fast power-on time and low-noise operation. evice programming is performed after packaging, to ensure increased switchpoint accuracy by eliminating offsets that can be induced by package stress. Unique Hall element geometries and lowoffset amplifiers help to minimize noise and to reduce the residual offset voltage normally caused by device overmolding, temperature excursions, and thermal stress. The A111-A114 and A116 Hall-effect switches include the following on a single silicon chip: voltage regulator, Hallvoltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor. The integrated voltage regulator permits operation from 3.8 to 24 V. The extensive on-board protection circuitry makes possible a ±3 V absolute maximum voltage rating for superior protection in automotive and industrial motor commutation applications, without adding external components. All devices in the family are identical except for magnetic switchpoint levels. The small geometries of the BiCMOS process allow these devices to be provided in ultrasmall packages. The package styles available provide magnetically optimized solutions for most applications. Package LH is an SOT23W, a miniature lowprofile surface-mount package, while package UA is a three-lead ultramini SIP for through-hole mounting. Each package is lead (Pb) free, with 1% matte-tin-plated leadframes. VCC Regulator To all subcircuits VOUT Amp Gain Offset Trim Control Functional Block iagram GN A111-S, Rev. 16

2 SPECIFICATIONS Selection Guide Part Number Packing * Mounting Ambient, T A B RP (Min) B OP (Max) A111ELHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A111ELHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A111EUA-T Bulk, 5 pieces/bag 3-pin SIP through hole A111LLHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A111LLHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A111LUA-T Bulk, 5 pieces/bag 3-pin SIP through hole A112ELHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A112ELHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A112EUA-T Bulk, 5 pieces/bag 3-pin SIP through hole A112LLHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A112LLHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A112LUA-T Bulk, 5 pieces/bag 3-pin SIP through hole A113ELHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A113ELHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A113LLHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A113LLHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A113LUA-T Bulk, 5 pieces/bag 3-pin SIP through hole 4ºC to 85ºC 4ºC to 15ºC 4ºC to 85ºC 4ºC to 15ºC 4ºC to 85ºC 4ºC to 15ºC A114EUA-T Bulk, 5 pieces/bag 3-pin SIP through hole 4ºC to 85ºC A114LLHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A114LLHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A114LUA-T Bulk, 5 pieces/bag 3-pin SIP through hole 4ºC to 15ºC A116EUA-T Bulk, 5 pieces/bag 3-pin SIP through hole 4ºC to 85ºC A116LLHLT-T 7-in. reel, 3 pieces/reel 3-pin SOT23W surface mount A116LLHLX-T 13-in. reel, 1 pieces/reel 3-pin SOT23W surface mount A116LUA-T Bulk, 5 pieces/bag 3-pin SIP through hole *Contact Allegro for additional packing options. Absolute Maximum Ratings 4ºC to 15ºC Characteristic Symbol Notes Rating Units Supply Voltage V CC 3 V Reverse Supply Voltage V RCC 3 V Output Off Voltage V OUT 3 V Reverse Output Voltage V ROUT.5 V Output Current I OUTSINK 25 ma Magnetic Flux ensity B Unlimited G Operating Ambient Temperature T A Range E 4 to 85 ºC Range L 4 to 15 ºC Maximum Junction Temperature T J (max) 165 ºC Storage Temperature T stg 65 to 17 ºC 2

3 ELECTRICAL OPERATING CHARACTERISTICS over full operating voltage and ambient temperature ranges, unless otherwise noted Characteristic Symbol Test Conditions Min. Typ. Max. Units Supply Voltage 1 V CC Operating, T J < 165 C V Output Leakage Current I OUTOFF V OUT = 24 V, B < B RP 1 µa Output On Voltage V OUT(SAT) I OUT = 2 ma, B > B OP mv Power-On Time 2 t PO Slew rate (dv CC /dt) < 2.5 V/μs, B > B OP + 5 G or B < B RP 5 G 4 µs Output Rise Time 3 t r V CC = 12 V, R LOA = 82 Ω, C S = 12 pf 4 ns Output Fall Time 3 t f V CC = 12 V, R LOA = 82 Ω, C S = 12 pf 4 ns Supply Current I CCON B > B OP ma I CCOFF B < B RP ma Reverse Battery Current I RCC V RCC = 3 V 1 ma Supply Zener Clamp Voltage V Z I CC = 1.5 ma; T A = 25 C 32 V Supply Zener Current 4 I Z V Z = 32 V; T A = 25 C 1.5 ma 1 Maximum voltage must be adjusted for power dissipation and junction temperature, see Power erating section. 2 For V CC slew rates greater than 25 V/μs, and T A = 15 C, the Power-On Time can reach its maximum value. 3 C S =oscilloscope probe capacitance. 4 Maximum current limit is equal to the maximum I CC(max) + 3 ma. EVICE QUALIFICATION PROGRAM Contact Allegro for information. EMC (ELECTROMAGNETIC COMPATABILITY) REQUIREMENTS Contact Allegro for information. GN VCC VCC GN VOUT VOUT Package LH Package UA, 3-pin SIP Terminal List Number Package LH Package UA Name escription 1 1 VCC Connects power supply to chip 2 3 VOUT Output from circuit 3 2 GN Ground 3

4 MAGNETIC OPERATING CHARACTERISTICS 1: over full operating voltage and ambient temperature ranges, unless otherwise noted Characteristic Symbol Test Conditions Min. Typ. Max. Units A111 T A = 25 C G Operating Temperature Range G A112 T A = 25 C G Operating Temperature Range G Operate Point B OP A113 T A = 25 C G Operating Temperature Range G A114 T A = 25 C 7 35 G Operating Temperature Range G A116 T A = 25 C G Operating Temperature Range G A111 T A = 25 C G Operating Temperature Range G A112 T A = 25 C G Operating Temperature Range G Release Point B RP A113 T A = 25 C G Operating Temperature Range G A114 T A = 25 C 5 33 G Operating Temperature Range G A116 T A = 25 C G Operating Temperature Range G A111 T A = 25 C G Operating Temperature Range G A112 T A = 25 C G Operating Temperature Range G Hysteresis B HYS A113 T A = 25 C G Operating Temperature Range G A114 T A = 25 C 2 55 G Operating Temperature Range 2 55 G A116 T A = 25 C G Operating Temperature Range G 1 Magnetic flux density, B, is indicated as a negative value for north-polarity magnetic fields, and as a positive value for south-polarity magnetic fields. This so-called algebraic convention supports arithmetic comparison of north and south polarity values, where the relative strength of the field is indicated by the absolute value of B, and the sign indicates the polarity of the field (for example, a 1 G field and a 1 G field have equivalent strength, but opposite polarity). 4

5 THERMAL CHARACTERISTICS: may require derating at maximum conditions; see application information Characteristic Symbol Test Conditions Value Units Package Thermal Resistance R θja Package LH, 1-layer PCB with copper limited to solder pads 228 ºC/W Package LH, 2-layer PCB with.463 in. 2 of copper area each side connected by thermal vias 11 ºC/W Package UA, 1-layer PCB with copper limited to solder pads 165 ºC/W Maximum Allowable V CC (V) Power erating Curve T J(max) = 165ºC; I CC = I CC(max) Package LH, 2-layer PCB (R θja = 11 ºC/W) Package UA, 1-layer PCB (R θja = 165 ºC/W) Package LH, 1-layer PCB (R θja = 228 ºC/W) V CC(max) V CC(min) Power issipation, P (mw) Power issipation versus Ambient Temperature Package LH, 2-layer PCB (R θja = 11 ºC/W) Package UA, 1-layer PCB (R θja = 165 ºC/W) Package LH, 1-layer PCB (R θja = 228 ºC/W) Temperature ( C) 5

6 CHARACTERISTIC ATA Supply Current (On) versus Ambient Temperature (A111/2/3/4/6) Supply Current (On) versus Supply Voltage (A111/2/3/4/6) ICCON (ma) V CC (V) T A ( C) V CC (V) ICCON (ma) T A ( C) Supply Current (Off) versus Ambient Temperature (A111/2/3/4/6) Supply Current (Off) versus Supply Voltage (A111/2/3/4/6) ICCOFF (ma) V CC (V) 6. T A ( C) T A ( C) V CC (V) ICCOFF (ma) Output Voltage (On) versus Ambient Temperature (A111/2/3/4/6) 4 4 Output Voltage (On) versus Supply Voltage (A111/2/3/4/6) V OUT(SAT) (mv) V CC (V) VOUT(SAT) (mv) T A ( C) T A ( C) V CC (V) 6

7 FUNCTIONAL ESCRIPTION OPERATION The output of these devices switches low (turns on) when a magnetic field (south polarity) perpendicular to the Hall element exceeds the operate point threshold, B OP. After turn-on, the output is capable of sinking 25 ma and the output voltage is V OUT(SAT). When the magnetic field is reduced below the release point, B RP, the device output goes high (turns off). The difference in the magnetic operate and release points is the hysteresis, B hys, of the device. This built-in hysteresis allows clean switching of the output, even in the presence of external mechanical vibration and electrical noise. Powering-on the device in the hysteresis region, less than B OP and higher than B RP, allows an indeterminate output state. The correct state is attained after the first excursion beyond B OP or B RP. CONTINUOUS-TIME BENEFITS Continuous-time devices, such as the A11x family, offer the fastest available power-on settling time and frequency response. ue to offsets generated during the IC packaging process, continuoustime devices typically require programming after packaging to tighten magnetic parameter distributions. In contrast, chopperstabilized switches employ an offset cancellation technique on the chip that eliminates these offsets without the need for afterpackaging programming. The tradeoff is a longer settling time and reduced frequency response as a result of the chopper-stabilization offset cancellation algorithm. The choice between continuous-time and chopper-stabilized designs is solely determined by the application. Battery management is an example where continuous-time is often required. In these applications, V CC is chopped with a very small duty cycle in order to conserve power (refer to figure 2). The duty cycle is controlled by the power-on time, t PO, of the device. Because continuous-time devices have the shorter power-on time, they are the clear choice for such applications. For more information on the chopper stabilization technique, refer to Technical Paper STP 97-1, Monolithic Magnetic Hall Sensing Using ynamic Quadrature Offset Cancellation and Technical Paper STP 99-1, Chopper-Stabilized Amplifiers with a Track-and-Hold Signal emodulator. (A) (B) V OUT V+ B Switch to High B RP B OP Switch to Low B+ V CC V OUT(SAT) V S VCC A11x VOUT GN R L Output B HYS Figure 1: Switching Behavior of Unipolar Switches On the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength, and the B direction indicates decreasing south polarity field strength (including the case of increasing north polarity). This behavior can be exhibited when using a circuit such as that shown in Panel B. 7

8 AITIONAL APPLICATIONS INFORMATION Extensive applications information for Hall-effect devices is available in: Hall-Effect IC Applications Guide, Application Note 2771 Hall-Effect evices: Guidelines for esigning Subassemblies Using Hall-Effect evices, Application Note Soldering Methods for Allegro s Products SMT and Through- Hole, Application Note 269 All are provided in Allegro Electronic ata Book, AMS-72, and the Allegro Web site, V CC t V OUT t t PO(max) Output Sampled Figure 2: Continuous-Time Application, B < B RP This figure illustrates the use of a quick cycle for chopping V CC in order to conserve battery power. Position 1, power is applied to the device. Position 2, the output assumes the correct state at a time prior to the maximum Power-On Time, t PO(max). The case shown is where the correct output state is HIGH. Position 3, t PO(max) has elapsed. The device output is valid. Position 4, after the output is valid, a control unit reads the output. Position 5, power is removed from the device. 8

9 POWER ERATING Power erating The device must be operated below the maximum junction temperature of the device, T J(max). Under certain combinations of peak conditions, reliable operation may require derating supplied power or improving the heat dissipation properties of the application. This section presents a procedure for correlating factors affecting operating T J. (Thermal data is also available on the Allegro MicroSystems Web site.) The Package Thermal Resistance, R θja, is a figure of merit summarizing the ability of the application and the device to dissipate heat from the junction (die), through all paths to the ambient air. Its primary component is the Effective Thermal Conductivity, K, of the printed circuit board, including adjacent devices and traces. Radiation from the die through the device case, R θjc, is relatively small component of R θja. Ambient air temperature, T A, and air motion are significant external factors, damped by overmolding. The effect of varying power levels (Power issipation, P ), can be estimated. The following formulas represent the fundamental relationships used to estimate T J, at P. P = V IN I IN (1) ΔT = P R θja (2) T J = T A + ΔT (3) For example, given common conditions such as: T A = 25 C, V CC = 12 V, I CC = 4 ma, and R θja = 14 C/W, then: A worst-case estimate, P (max), represents the maximum allowable power level (V CC(max), I CC(max) ), without exceeding T J(max), at a selected R θja and T A. Example: Reliability for V CC at T A = 15 C, package UA, using minimum-k PCB. Observe the worst-case ratings for the device, specifically: R θja = 165 C/W, T J(max) = 165 C, V CC(max) = 24 V, and I CC(max) = 7.5 ma. Calculate the maximum allowable power level, P (max). First, invert equation 3: ΔT max = T J(max) T A = 165 C 15 C = 15 C This provides the allowable increase to T J resulting from internal power dissipation. Then, invert equation 2: P (max) = ΔT max R θja = 15 C 165 C/W = 91 mw Finally, invert equation 1 with respect to voltage: V CC(est) = P (max) I CC(max) = 91 mw 7.5 ma = 12.1 V The result indicates that, at T A, the application and device can dissipate adequate amounts of heat at voltages V CC(est). Compare V CC(est) to V CC(max). If V CC(est) V CC(max), then reliable operation between V CC(est) and V CC(max) requires enhanced R θja. If V CC(est) V CC(max), then operation between V CC(est) and V CC(max) is reliable under these conditions. P = V CC I CC = 12 V 4 ma = 48 mw ΔT = P R θja = 48 mw 14 C/W = 7 C T J = T A + ΔT = 25 C + 7 C = 32 C 9

10 CUSTOMER PACKAGE RAWING For Reference Only Not for Tooling Use (Reference WG-284) imensions in millimeters NOT TO SCALE imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown A 4 ± MIN REF.25 BSC.95 Branded Face Seating Plane Gauge Plane B PCB Layout Reference View 8X 1 REF 1. ±.13 A111, A112, A113, A114, and A116 NNT.95 BSC.4 ± N = Last three digits of device part number T = Temperature Code (Letter) A Active Area epth,.28 mm B Reference land pattern layout; all pads a minimum of.2 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances C Branding scale and appearance at supplier discretion Hall elements, not to scale A111, A112, A113, A114, and A116 NNN C N = Last three digits of device part number Standard Branding Reference View Figure 3: Package LH, 3-Pin (SOT-23W) 1

11 For Reference Only Not for Tooling Use (Reference WG-949) imensions in millimeters NOT TO SCALE imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 45 B ±.5 E 2.4 C E E 2 X 1 Branded Face Mold Ejector Pin Indent MAX.51 REF A.79 REF NOM NNT ±.25 Standard Branding Reference View N T 1 = Supplier emblem = Last three digits of device part number =Temperature code A B C E ambar removal protrusion (6X) Gate and tie bar burr area Active Area epth,.5 mm REF Branding scale and appearance at supplier discretion Hall element, not to scale Figure 4: Package UA, 3-Pin SIP (A111, A112, A113, and A114) 11

12 For Reference Only Not for Tooling Use (Reference WG-913) imensions in millimeters NOT TO SCALE imensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 45 B ±.5 E 2.4 C E E 2 X 1 Branded Face Mold Ejector Pin Indent MAX A.79 REF NOM NNN ±.25 1 Standard Branding Reference View = Supplier emblem N = Last three digits of device part number A B C E ambar removal protrusion (6X) Gate and tie bar burr area Active Area epth,.5 mm REF Branding scale and appearance at supplier discretion Hall element, not to scale Figure 5: Package UA, 3-Pin SIP (A116) 12

13 Revision History Revision Revision ate escription of Revision 14 May 29, 212 Add A116 UA package drawing 15 January 1, 215 Added the LX option to Selection Guide 16 September 3, 215 Corrected LH package Active Area epth value and LH package branding; added AEC-Q1 qualification under Features and Benefits Copyright 215, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. For the latest version of this document, visit our website: 13

Continuous-Time Switch Family

Continuous-Time Switch Family Features and Benefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed

More information

Continuous-Time Switch Family

Continuous-Time Switch Family Features and enefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed

More information

Chopper-Stabilized Precision Hall-Effect Latches

Chopper-Stabilized Precision Hall-Effect Latches Features and Benefits AEC-Q1 automotive qualified Symmetrical latch switchpoints Resistant to physical stress Superior temperature stability Output short-circuit protection Operation from unregulated supply

More information

A1126. Chopper-Stabilized Omnipolar Hall-Effect Switch DESCRIPTION FEATURES AND BENEFITS. PACKAGES: Not to scale. Functional Block Diagram

A1126. Chopper-Stabilized Omnipolar Hall-Effect Switch DESCRIPTION FEATURES AND BENEFITS. PACKAGES: Not to scale. Functional Block Diagram FEATURES AND BENEFITS AEC-Q1 automotive qualified Omnipolar operation Low switchpoint drift Superior temperature stability Insensitive to physical stress Reverse-battery protection Robust EMC capability

More information

Hall-Effect Latch / Bipolar Switch

Hall-Effect Latch / Bipolar Switch 2 - FEATURES AND BENEFITS AEC-Q1 automotive qualified Quality managed (QM), ISO 26262 compliant High-speed, 4-phase chopper stabilization Low operating voltage down to 3 V High sensitivity Stable switchpoints

More information

APS12205, APS12215, and APS12235 High-Temperature Hall-Effect Latches for Low Voltage Applications

APS12205, APS12215, and APS12235 High-Temperature Hall-Effect Latches for Low Voltage Applications FEATURES AND BENEFITS Optimized for applications with regulated power rails Operation from to. V AEC-Q100 automotive qualified Operation up to 17 C junction temperature Dynamic offset cancellation Resistant

More information

A1245. Chopper-Stabilized, Two Wire Hall-Effect Latch PACKAGES

A1245. Chopper-Stabilized, Two Wire Hall-Effect Latch PACKAGES FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient

More information

A1244 Chopper-Stabilized, Two Wire Hall-Effect Latch

A1244 Chopper-Stabilized, Two Wire Hall-Effect Latch Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient

More information

Discontinued Product

Discontinued Product Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: November 1, 21 Recommended

More information

APS13290 and APS13291 Precision Hall-Effect Latches for Consumer and Industrial Applications

APS13290 and APS13291 Precision Hall-Effect Latches for Consumer and Industrial Applications APS329 and FEATURES AND BENEFITS Symmetrical latch switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 4 C to 7 C junction temperature Output short-circuit

More information

Precision Hall-Effect Switch for Consumer and Industrial Applications

Precision Hall-Effect Switch for Consumer and Industrial Applications FEATURES AND BENEFITS Unipolar switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 40 C to 175 C junction temperature Output short-circuit and

More information

Chopper-Stabilized, Two Wire Hall-Effect Switches

Chopper-Stabilized, Two Wire Hall-Effect Switches FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient

More information

High-Temperature Precision Hall-Effect Switch

High-Temperature Precision Hall-Effect Switch - FEATURES AND BENEFITS Unipolar switchpoints ASIL A functional safety compliance Automotive-grade ruggedness and fault tolerance Extended AEC-Q qualification Reverse-battery and 4 V load dump protection

More information

Chopper-Stabilized, Two Wire Hall-Effect Switches

Chopper-Stabilized, Two Wire Hall-Effect Switches Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient

More information

Chopper-Stabilized, Two-Wire Hall-Effect Switches

Chopper-Stabilized, Two-Wire Hall-Effect Switches FETURES N ENEFITS E-Q100 automotive qualified High-speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection

More information

A1321, A1322, and A1323

A1321, A1322, and A1323 ,, Features and Benefits Temperature-stable quiescent output voltage Precise recoverability after temperature cycling Output voltage proportional to magnetic flux density Ratiometric rail-to-rail output

More information

Isolated Current Sensor with Common Mode Field Rejection

Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The SENKO SC820 provides economical and precise solutions for AC or DC current sensing in industrial,

More information

A4480 Wide Input 5 V, 50 ma, Automotive Regulator with Output Short-to-Battery Protection and Power OK

A4480 Wide Input 5 V, 50 ma, Automotive Regulator with Output Short-to-Battery Protection and Power OK FEATURES AND BENEFITS Automotive AEC-Q100 qualified Wide operating range of 3.5 to 8 V, with 40 V load dump rating Linear regulator output with foldback short-circuit and short-to-battery protection Boost

More information

3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection

3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC 3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s provides economical and precise solutions for AC or DC current

More information

Isolated Current Sensor with Common Mode Field Rejection

Isolated Current Sensor with Common Mode Field Rejection Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s SC810 provides economical and precise solutions for AC or DC current sensing in

More information

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X Features General Description 3.5V to 20V DC operation voltage Temperature compensation Wide operating voltage range Open-Collector pre-driver 25mA maximum sinking output current Reverse polarity protection

More information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information

2N7002. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 5) Marking Information YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state

More information

HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS

HAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUT HALL EFFECT LATCH DESCRIPTION The UTC H654 is integrated Hall sensors with complementary output drivers designed for electronic commutation of brushless

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH276 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal

More information

HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications

HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications General Description The is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing,

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD COMPLEMENTARY OUTPUTS HALL EFFECT LATCH IC DESCRIPTION The UTC UH277 is a Latch-Type Hall Effect sensor with built-in complementary output drivers. It s designed with internal

More information

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted

More information

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed

More information

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)

More information

MT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors

MT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors Features and Benefits BiCMOS Technology Magnetic Type: Latch Wide Operating Voltage Range: Supply Voltage 2.8~24V Specified Operating Temperature Range: From -40 ~ 150 High Magnetic Sensitivity B OP =20Gauss,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate

More information

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.

DG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118. Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,

More information

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green Features General Description On-Chip Hall Sensor with Two Different Sensitivity and Hysteresis Settings for ATS276 3.5V to 2V Operating Voltage 4mA (avg.) Output Sink Current Built-in Protecting Diode

More information

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device

More information

ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725

ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725 FEATURES AND BENEFITS AEC-Q qualified Differential Hall sensing rejects common-mode fields. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated shield

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

S S. Top View Bottom View

S S. Top View Bottom View YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain

More information

PRODUCTION DATA SHEET

PRODUCTION DATA SHEET The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew

More information

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel

I D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS

More information

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP

LC 2 MOS Precision Analog Switch in MSOP ADG419-EP LC 2 MOS Precision Analog Switch in MSOP AG49-EP FEATURES 44 V supply maximum ratings VSS to V analog signal range Low on resistance:

More information

N-Channel 12 V (D-S) MOSFET

N-Channel 12 V (D-S) MOSFET New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET

More information

RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122

More information

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc E-MAIL: Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 2V operating voltage - 4mA (avg) output sink current - Build-in protecting diode only for chip

More information

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604 a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3

More information

IX4340NE. Automotive Grade 5-Ampere, Dual Low-Side MOSFET Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications

IX4340NE. Automotive Grade 5-Ampere, Dual Low-Side MOSFET Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications Automotive Grade -Ampere, Dual Low-Side MOSFET Driver Features AEC-Q100 qualified Two independent drivers, each capable of sourcing and sinking A V to 20V supply voltage range AEC-Q100 Grade 1-0 C to +12

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed

More information

74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting

74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance

More information

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES

More information

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

More information

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits

More information

N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According

More information

istributed by: www.ameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. 27002T -CHAEL EHACEMET MOE FIEL EFFECT TRASISTOR Features EW PROUCT Low On-Resistance

More information

5-V Low Drop Fixed Voltage Regulator TLE 4275

5-V Low Drop Fixed Voltage Regulator TLE 4275 5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof

More information

2 Input NAND Gate L74VHC1G00

2 Input NAND Gate L74VHC1G00 Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining

More information

60 V, 0.3 A N-channel Trench MOSFET

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

More information

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

More information

5-V Low Drop Voltage Regulator TLE 4290

5-V Low Drop Voltage Regulator TLE 4290 5-V Low Drop Voltage Regulator TLE 429 Features Output voltage 5 V ± 2% Very low current consumption 45 ma current capability Power Good Feature Very low-drop voltage Short-circuit-proof Reverse polarity

More information

IRLML2030TRPbF HEXFET Power MOSFET

IRLML2030TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

More information

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409 a FEATURES 44 upply Maximum Ratings to Analog Signal Range Low On Resistance ( max) Low Power (I SUPPLY < 75 A) Fast Switching Break-Before-Make Switching Action Plug-in Replacement for G408/G409 APPLICATIONS

More information

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages

Low-Voltage Analog Temperature Sensors in SC70 and SOT23 Packages 19-2040; Rev 1; 6/01 Low-Voltage Analog Temperature Sensors General Description The precision, low-voltage, analog output temperature sensors are available in 5-pin SC70 and SOT23 packages. The devices

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)

More information

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel

Bottom View. Part Number Case Packaging DMP1005UFDF-7 U-DFN (Type F) 3,000/Tape & Reel DMP1005UFDF-13 U-DFN (Type F) 10,000/Tape & Reel YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile

More information

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According

More information

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. www.ablicinc.com FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 This IC, developed by CMOS technology, is a high-accuracy Hall effect

More information

AO3411 P-Channel Enhancement Mode Field Effect Transistor

AO3411 P-Channel Enhancement Mode Field Effect Transistor January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate

More information

ACS724. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small-Footprint SOIC8 Package ACS724

ACS724. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small-Footprint SOIC8 Package ACS724 FEATURES AND BENEFITS AEC-Q1 qualified Differential Hall sensing rejects common-mode fields 1. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated

More information

74HC86. Quad 2 Input Exclusive OR Gate. High Performance Silicon Gate CMOS

74HC86. Quad 2 Input Exclusive OR Gate. High Performance Silicon Gate CMOS Quad 2 Input Exclusive OR Gate MARKING DIAGRAMS High Performance Silicon Gate CMOS The is identical in pinout to the LS86. The device inputs are compatible with standard CMOS outputs; with pullup resistors,

More information

Schmitt-Trigger Inverter/ CMOS Logic Level Shifter

Schmitt-Trigger Inverter/ CMOS Logic Level Shifter Schmitt-Trigger Inverter/ CMOS Logic Level Shifter with LSTTL Compatible Inputs The is a single gate CMOS Schmitt trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation

More information

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5 DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum

More information

CA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5

CA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5 Data Sheet August FN8. General Purpose NPN Transistor Array The consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected

More information

TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1,

TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1, Low Dropout Fixed Voltage Regulator TLE42644G Data Sheet Rev. 1.1, 214-7-3 Automotive Power Low Dropout Fixed Voltage Regulator TLE42644G 1 Overview Features Output Voltage 5 V ± 2 % up to Output Currents

More information

Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000

Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000 IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast

More information

CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633

CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633 CMOS ±5 V/+5 V/+3 V Triple SPT Switch AG633 FEATURES ±2 V to ±6 V ual Supply 2 V to 12 ingle Supply Automotive Temperature Range 4 o C to +125 o C

More information

High Reliability Hallogic Hall- Effect Sensors OMH090, OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 (B, S versions)

High Reliability Hallogic Hall- Effect Sensors OMH090, OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 (B, S versions) High Reliability Hallogic Hall Features: Designed for noncontact switching operations Operates over a broad range of supply voltages Excellent temperature stability operates in harsh environments Suitable

More information

SGM800 Low-Power, SOT µp Reset Circuit with Capacitor-Adjustable Reset Timeout Delay

SGM800 Low-Power, SOT µp Reset Circuit with Capacitor-Adjustable Reset Timeout Delay GENERAL DESCRIPTION The low-power micro-processor supervisor circuit monitors system voltages from 1.6V to 5V. This device performs a single function: it asserts a reset signal whenever the V CC supply

More information

General Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design.

General Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design. Features - On-chip Hall sensor with two different sensitivity and hysteresis settings for - 3.5V to 18V operating voltage - 35mA (avg) output sink current - Built-in protecting diode only for chip reverse

More information

ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725

ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725 FEATURES AND BENEFITS AEC-Q qualified Differential Hall sensing rejects common-mode fields. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated shield

More information

TC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70

TC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70 1 ma, Tiny CMOS LDO With Shutdown Features Space-saving -Pin SC-7 and SOT-23 Packages Extremely Low Operating Current for Longer Battery Life: 3 µa (typ.) Very Low Dropout Voltage Rated 1 ma Output Current

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

PN2907 / MMBT2907 PNP General-Purpose Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.

More information

5-V Low Drop Fixed Voltage Regulator TLE

5-V Low Drop Fixed Voltage Regulator TLE 5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

Features. Pinout. PART NUMBER PART MARKING TAPE & REEL PKG PKG. DWG. # EL7156CNZ (Note) (No longer available, recommended replacement: EL7156CSZ)

Features. Pinout. PART NUMBER PART MARKING TAPE & REEL PKG PKG. DWG. # EL7156CNZ (Note) (No longer available, recommended replacement: EL7156CSZ) DATASHEET EL76 High Performance Pin Driver The EL76 high performance pin driver with three-state is suited to many ATE and level-shifting applications. The 3.A peak drive capability makes this part an

More information

Package Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100

Package Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100 IXD_64 4-Ampere Low-Side Ultrafast MOSFET Drivers Features 4A Peak Source/Sink Drive Current Wide Operating Voltage Range: 4.V to V - C to +2 C Extended Operating Temperature Range Logic Input Withstands

More information

High-Supply-Voltage, Precision Voltage Reference in SOT23 MAX6035

High-Supply-Voltage, Precision Voltage Reference in SOT23 MAX6035 19-2606; Rev 3; 11/06 High-Supply-Voltage, Precision General Description The is a high-voltage, precision micropower voltage reference. This three-terminal device is available with output voltage options

More information

FAN ma, Low-IQ, Low-Noise, LDO Regulator

FAN ma, Low-IQ, Low-Noise, LDO Regulator April 2014 FAN25800 500 ma, Low-I Q, Low-Noise, LDO Regulator Features V IN: 2.3 V to 5.5 V V OUT = 3.3 V (I OUT Max. = 500 ma) V OUT = 5.14 V (I OUT Max. = 250 ma) Output Noise Density at 250 ma and 10

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

onlinecomponents.com

onlinecomponents.com MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed

More information