Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000
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1 IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast Rise and Fall Times Low Power Consumption pplications MOSFET Driver Switching Power Supplies Motor Controls DC to DC Converters Pulse Transformer Driver Description The IX23, IX2, and IX25 are dual high-speed, low-side gate drivers. Each of the two outputs can source and sink 3 of peak current with rise and fall times of less than ns. The inputs of each driver are TTL and CMOS compatible, and are virtually immune to latch-up. Low propagation delay times and fast, matched rise and fall times make the IX23, IX2, and IX25 ideal for high-frequency and high-power applications. The IX23 is configured as a dual inverting driver; the IX2 is configured as a dual non-inverting driver; and the IX25 is configured with one inverting driver and one non-inverting driver. ll three devices are available in a standard -pin SOIC package. Ordering Information Logic Configuration Part Number Package Type Packing Method Quantity B IX23N -Pin SOIC Tube IX23NTR -Pin SOIC Tape & Reel 2 B IX2N -Pin SOIC Tube IX2NTR -Pin SOIC Tape & Reel 2 B IX25N -Pin SOIC Tube IX25NTR -Pin SOIC Tape & Reel 2 DS-_R2
2 . Specifications Pin Configurations Pin Definitions bsolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics: T = 25 C Electrical Characteristics: T = - C to +25 C Thermal Characteristics Performance Timing Diagrams Characteristics Test Diagram Block Diagrams & Truth Tables IX IX IX Typical Performance Characteristics Manufacturing Information Moisture Sensitivity ESD Sensitivity Soldering Profile Board Wash Mechanical Dimensions R2
3 Specifications. Pin Configurations.2 Pin Definitions 2 3 IX23 7 Pin Name Description Channel Logic Input Channel B Logic Input B 5 Channel Output - Sources or sinks current to turn-on or turn-off a discrete MOSFET or IGBT IX2 Channel B Output - Sources or sinks current to turn on or turn off a discrete MOSFET or IGBT 2 7 Supply Voltage - Provides power to the device 3 B IX25 5 Ground - Common ground reference for the device No Connection B 5.3 bsolute Maximum Ratings Parameter Symbol Minimum Maximum Units Supply Voltage V Input Voltage V IN V Output Current I OUT - ±3 Junction Temperature T J C Storage Temperature T STG C Unless otherwise specified, absolute maximum electrical ratings are at 25 C bsolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the Recommended Operating Conditions table and other operational sections of this data sheet is not implied.. Recommended Operating Conditions Parameter Symbol Minimum Maximum Units Supply Voltage.5 3 V Operating Temperature Range T C R2 3
4 .5 Electrical Characteristics: T = 25 C Test Conditions:.5V < < V. Parameter Conditions Symbol Minimum Typical Maximum Units Input Voltage, High - V IH Input Voltage, Low - V IL - -. V Input Current V < V IN < I IN - - ± Output Voltage, High - V OH Output Voltage, Low - V OL V Output Resistance, High State =V, I OUT =-m R OH Output Resistance, Low State =V, I OUT =m R OL Rise Time =V, OD =pf t R - 35 Fall Time =V, OD =pf t F - 35 On-Time Propagation Delay =V, OD =pf t on ns Off-Time Propagation Delay =V, OD =pf t off Power Supply Current V =V =3.5V - 3 I =V =V -.. m R2
5 . Electrical Characteristics: T = - C to +25 C Test Conditions:.5V < < V. Parameter Conditions Symbol Minimum Maximum Units Input Voltage, High - V IH Input Voltage, Low - V IL -.5 V Input Current V < V IN < I IN - ± Output Voltage, High - V OH Output Voltage, Low - V OL -.25 V Output Resistance, High State =V, I OUT =-m R OH - Output Resistance, Low State =V, I OUT =m R OL - 5 Rise Time =V, OD =pf t R - Fall Time =V, OD =pf t F - On-Time Propagation Delay =V, OD =pf t on - ns Off-Time Propagation Delay =V, OD =pf t off - Power Supply Current V =V =3.5V I =V =V -.5 m R2 5
6 .7 Thermal Characteristics Package Parameter Symbol Rating Units -Pin SOIC Thermal Resistance, Junction-to-mbient J 2 C/W 2 Performance 2. Timing Diagrams V IH V IH INx V IL INx V IL t on t off t off t on 9% OUTx % OUTx 9% % t R t F t F t R Non-Inverting Driver Waveforms Inverting Driver Waveforms 2.2 Characteristics Test Diagram +.μf μf - pf Tektronix Current Probe 32 V IN pf Tektronix Current Probe 32 R2
7 3 Block Diagrams & Truth Tables 3. IX IX2 IN X OUT X IN X OUT X 3.2 IX25 R2 7
8 Typical Performance Characteristics Rise Time (ns) 2 2 Rise Time vs. Supply Voltage (V IN =-5V, f=khz, T =25ºC) =.7nF =nf =7pF Fall Time (ns) 2 2 Fall Time vs. Supply Voltage (V IN =-5V, f=khz, T =25ºC) =.7nF =nf =7pF Time (ns) Rise & Fall Time vs. Temperature (V IN =-5V, =V, =nf) t r t f Rise Time (ns) 2 Rise Time vs. Load Capacitance =.5V =V =2V =V =25V =3V =35V Fall Time (ns) 2 Fall Time vs. Load Capacitance =.5V =V =2V =V =25V =3V =35V Load Capacitance (pf) Load Capacitance (pf) Propagation Delay (ns) Propagation Delay vs. Supply Voltage (V IN =-5V, =nf, f=khz) t ondly t offdly Propagation Delay (ns) Propagation Delay vs. Input Voltage ( =V, =nf) t offdly t ondly Input Voltage (V) Propagation Delay (ns) Propagation Delay vs. Temperature ( =V, =nf) t offdly t ondly Input Threshold vs. Temperature ( =V, =nf) 3.5 Input Threshold vs. Supply Voltage Input Threshold (V) Min V IH Max V IL Input Threshold (V) Min V IH Max V IL R2
9 2 5 5 Supply Current vs. Load Capacitance Both Outputs ctive ( =V) f=2mhz f=mhz f=5khz f=khz f=5khz f=khz f=khz Supply Current vs. Load Capacitance Both Outputs ctive ( =2V) f=2mhz f=mhz f=5khz f=khz f=5khz f=khz f=khz Supply Current vs. Load Capacitance Both Outputs ctive ( =V) f=2mhz f=mhz f=5khz f=khz f=5khz f=khz f=khz Load Capacitance (pf) Load Capacitance (pf) Load Capacitance (pf) Supply Current vs. Load Capacitance Both Outputs ctive ( =35V) f=2mhz f=mhz f=5khz f=khz f=5khz f=khz f=khz Load Capacitance (pf). =.7nF =nf =7pF Supply Current vs. Frequency Both Outputs ctive ( =V).. Frequency (khz). =.7nF =nf =7pF Supply Current vs. Frequency Both Outputs ctive ( =2V).. Frequency (khz). =.7nF =nf =7pF Supply Current vs. Frequency Both Outputs ctive ( =V).. Frequency (khz). =.7nF =nf =7pF Supply Current vs. Frequency Both Outputs ctive ( =35V).. Frequency (khz) Quiescent Supply Current vs. Temperature ( =V) V IN =3.5V V IN =5V V IN =V.5 V IN =V & V Dynamic Supply Current vs. Temperature (V IN =-5V, =V, =nf, f=khz) Source Current () Output Source Current vs. Supply Voltage ( =27nF) Sink Current () Output Sink Current vs. Supply Voltage ( =27nF) R2 9
10 Source Current () Output Source Current vs. Temperature ( =V, =27nF) Sink Current () Output Sink Current vs. Temperature ( =V, =27nF) High-State Output Resistance vs. Supply Voltage (I OUT = -m) Low State Output Resistance vs. Supply Voltage (I OUT = +m) Output Resistance (Ω) 2 Output Resistance (Ω) R2
11 5 Manufacturing Information 5. Moisture Sensitivity ll plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-2, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-33. Device Moisture Sensitivity Level (MSL) Classification IX23N / IX2N / IX25N MSL 5.2 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD Soldering Profile Provided in the table below is the Classification Temperature (T C ) of this product and the maximum dwell time the body temperature of this device may be (T C - 5)ºC or greater. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. For through-hole devices, and any other processes, the guidelines of J-STD-2 must be observed. Device Classification Temperature (T C ) Dwell Time (t p ) Max Reflow Cycles IX23N / IX2N / IX25N 2 C 3 seconds 3 5. Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include but are not limited to: using a low pressure wash and providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not be used. dditionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based R2
12 5.5 Mechanical Dimensions 5.5. N Package (-Pin SOIC).3 /.5 (.2 /.2) x TOP VIEW PCB Land Pattern.55 (.) 5. /.2 (.22 /.2) 5 3. /. (.5 /.57) 3.75 (.).75 MX (.9 MX) PIN #.25 MIN (.9 MIN).27.5 x. / 5. (.9 /.97) GUGE PLNE SETING PLNE.25 (.) -. /.25 (. /.). /.27 (. /.5). (.2). /.25 (. /.). (.) Dimensions MIN / MX Notes:. Controlling dimension: millimeters. 2. ll dimensions are in mm (inches). 3. This package conforms to JEDEC Standard MS-2, variation, Rev. F.. Dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed.5mm per end. 5. Dimension does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed.25mm per side.. Lead thickness includes plating N Package Tape & Reel 33.2 DI. (3. DI.) Top Cover Tape Thickness.2 MX. (. MX.) B =5.3 (.29) W=2. (.72) K = 2. (.3) =.5 (.25) P=. (.35) Embossed Carrier User Direction of Feed Dimensions mm (inches) Embossment NOTE: Tape dimensions not shown comply with JEDEC Standard EI--2 For additional information please visit our website at: IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. Specification: DS-_R2 Copyright 27, IXYS Integrated Circuits Division ll rights reserved. Printed in US. /25/ R2
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CD74HC165, CD74HCT165
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CD74HC109, CD74HCT109
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CD4021BC 8-Stage Static Shift Register
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MM74C906 Hex Open Drain N-Channel Buffers
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74VHC00 Quad 2-Input NAND Gate
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CD4528BC Dual Monostable Multivibrator
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CD4514BC CD4515BC 4-Bit Latched/4-to-16 Line Decoders
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MM74HC164 8-Bit Serial-in/Parallel-out Shift Register
8-Bit Serial-in/Parallel-out Shift Register General Description Ordering Code: September 1983 Revised February 1999 The MM74HC164 utilizes advanced silicon-gate CMOS technology. It has the high noise immunity
SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY
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MM74HC138 3-to-8 Line Decoder
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74AC00, 74ACT00 Quad 2-Input NAND Gate
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MC74AC138, MC74ACT of 8 Decoder/Demultiplexer
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April 2004 AS7C3256A
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CD4027BC Dual J-K Master/Slave Flip-Flop with Set and Reset
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CD54/74HC393, CD54/74HCT393
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8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground).
Rev. 04 12 January 2005 Product data sheet 1. General description 2. Features The is an with three address inputs (0 to 2), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and
MM74HC251 8-Channel 3-STATE Multiplexer
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PC Card (PCMCIA) Dual Interface Switch
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DM74LS138 DM74LS139 Decoder/Demultiplexer
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DM7404 Hex Inverting Gates
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FST Bit Bus Switch
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CD54/74HC30, CD54/74HCT30
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MM74HC574 3-STATE Octal D-Type Edge-Triggered Flip-Flop
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MM74C85 4-Bit Magnitude Comparator
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74AC153 74ACT153 Dual 4-Input Multiplexer
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CD4013BC Dual D-Type Flip-Flop
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NE522 High Speed Dual Differential Comparator/Sense Amp
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MM74HCT373 MM74HCT374 3-STATE Octal D-Type Latch 3-STATE Octal D-Type Flip-Flop
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