ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725
|
|
- Godfrey Wheeler
- 5 years ago
- Views:
Transcription
1 FEATURES AND BENEFITS AEC-Q qualified Differential Hall sensing rejects common-mode fields. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated shield virtually eliminates capacitive coupling from current conductor to die, greatly suppressing output noise due to high dv/dt transients Industry-leading noise performance with greatly improved bandwidth through proprietary amplifier and filter design techniques High-bandwidth khz analog output for faster response times in control applications Filter pin allows user to filter the output for improved resolution at lower bandwidth Patented integrated digital temperature compensation circuitry allows for near closed loop accuracy over temperature in an open-loop sensor Small footprint, low-profile SOIC8 package suitable for space-constrained applications Filter pin simplifies bandwidth limiting for better resolution at lower frequencies Continued on the next page Type tested TÜV America Certificate Number: U8V CB PACKAGE: 8-Pin SOIC (suffix LC) Not to scale CB Certificate Number: US848-UL DESCRIPTION The Allegro ACS75 current sensor IC is an economical and precise solution for AC or DC current sensing in industrial, automotive, commercial, and communications systems. The small package is ideal for space-constrained applications while also saving costs due to reduced board area. Typical applications include motor control, load detection and management, switched-mode power supplies, and overcurrent fault protection. The device consists of a precise, low-offset, linear Hall sensor circuit with a copper conduction path located near the surface of the die. Applied current flowing through this copper conduction path generates a magnetic field which is sensed by the integrated Hall IC and converted into a proportional voltage. The current is sensed differentially in order to reject common-mode fields, improving accuracy in magnetically noisy environments. The inherent device accuracy is optimized through the close proximity of the magnetic field to the Hall transducer. A precise, proportional voltage is provided by the low-offset, chopper-stabilized BiCMOS Hall IC, which is programmed for accuracy after packaging. The output of the device has a positive slope when an increasing current flows through the primary copper conduction path (from pins and, to pins 3 and 4), which is the path used for current sensing. The internal resistance of this conductive path is. mω typical, providing low power loss. The terminals of the conductive path are electrically isolated from the sensor leads (pins 5 through 8). This allows the ACS75 current sensor IC to be used in high-side current sense applications without the use of high-side differential amplifiers or other costly isolation techniques. Continued on the next page +IP I P IP 3 4 IP+ IP+ IP IP ACS75 VCC VIOUT FILTER GND C F nf CLOAD C BYPASS. µf The ACS75 outputs an analog signal, V IOUT, that changes, proportionally, with the bidirectional AC or DC primary sensed current, I P, within the specified measurement range. The FILTER pin can be used to decrease the bandwidth in order to optimize the noise performance. Typical Application ACS75-DS, Rev. MCO-6 December 3, 8
2 FEATURES AND BENEFITS (continued) 3.3 V, single supply operation Output voltage proportional to AC or DC current Factory-trimmed sensitivity and quiescent output voltage for improved accuracy Chopper stabilization results in extremely stable quiescent output voltage Nearly zero magnetic hysteresis Ratiometric output from supply voltage DESCRIPTION (continued) The ACS75 is provided in a small, low-profile surface-mount SOIC8 package. The leadframe is plated with % matte tin, which is compatible with standard lead (Pb) free printed circuit board assembly processes. Internally, the device is Pb-free, except for flip-chip high-temperature Pb-based solder balls, currently exempt from RoHS. The device is fully calibrated prior to shipment from the factory. SELECTION GUIDE Part Number I PR (A) Sens(Typ) at V CC = 3.3 V (mv/a) T A ( C) Packing [] ACS75LLCTR-5AB-T ±5 64 ACS75LLCTR-AB-T ± 3 ACS75LLCTR-AU-T 64 ACS75LLCTRAB-T ± 66 ACS75LLCTRAU-T 3 ACS75LLCTRAB-T ± to 5 Tape and Reel, 3 pieces per reel ACS75LLCTRAB-T-H [] ±3 44 ACS75LLCTRAU-T 3 88 ACS75LLCTRAB-T ±4 33 ACS75LLCTR-5AB-T ±5 6.4 [] Contact Allegro for additional packing options. [] -H denotes % cold calibration at the Allegro factory for improved accuracy. Manchester, NH U.S.A.
3 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Notes Rating Units Supply Voltage V CC 6 V Reverse Supply Voltage V RCC. V Output Voltage V IOUT V CC +.5 V Reverse Output Voltage V RIOUT. V Operating Ambient Temperature T A Range L 4 to 5 C Junction Temperature T J (max) 65 C Storage Temperature T stg 65 to 65 C ISOLATION CHARACTERISTICS Characteristic Symbol Notes Rating Unit Tested ±5 pulses at /minute in compliance to IEC 6-5 Dielectric Surge Strength Test Voltage V SURGE. µs (rise) / 5 µs (width). 6 V Dielectric Strength Test Voltage V ISO (edition ). Production tested at V ISO for second, in 4 V RMS Agency type-tested for 6 seconds per UL standard 695- accordance with UL 695- (edition ). Maximum approved working voltage for basic (single) 4 V pk or VDC Working Voltage for Basic Isolation V WVBI isolation according UL 695- (edition ) 97 V rms Clearance D cl Minimum distance through air from IP leads to signal leads 4. mm Minimum distance along package body from IP leadds to Creepage D cr signal leads 4. mm THERMAL CHARACTERISTICS Characteristic Symbol Test Conditions* Value Units Package Thermal Resistance (Junction to Ambient) Package Thermal Resistance (Junction to Lead) R θja Mounted on the Allegro 85 evaluation board with 8 mm of 4 oz. copper on each side, connected to pins and, and to pins 3 and 4, with thermal vias connecting the layers. Performance values include the power consumed by the PCB. 3 C/W R θjl Mounted on the Allegro ASEK75 evaluation board. 5 C/W *Additional thermal information available on the Allegro website. Manchester, NH U.S.A. 3
4 V CC VCC Master Current Supply To All Subcircuits POR Programming Control IP+ IP+ Hall Current Drive Temperature Sensor Sensitivity Control EEPROM and Control Logic Offset Control C BYPASS. µf IP Dynamic Offset Cancellation + R F(int) + VIOUT IP GND C F FILTER Functional Block Diagram Pinout Diagram and Terminal List Table IP+ IP+ IP 3 IP 4 8 VCC 7 VIOUT 6 FILTER 5 GND Package LC, 8-Pin SOICN Pinout Diagram Terminal List Table Number Name Description, IP+ Terminals for current being sensed; fused internally 3, 4 IP Terminals for current being sensed; fused internally 5 GND Signal ground terminal 6 FILTER Terminal for external capacitor that sets bandwidth 7 VIOUT Analog output signal 8 VCC Device power supply terminal Manchester, NH U.S.A. 4
5 COMMON ELECTRICAL CHARACTERISTICS [] : Valid through the full range of T A, V CC = 3.3 V, C F =, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Unit Supply Voltage V CC V Supply Current I CC V CC = 3.3 V, output open 4 ma Output Capacitance Load C L VIOUT to GND nf Output Resistive Load R L VIOUT to GND 4.7 kω Primary Conductor Resistance R IP T A = 5 C. mω Internal Filter Resistance [] R F(int).8 kω Common Mode Field Rejection Ratio CMFRR Uniform external magnetic field 4 db Primary Hall Coupling Factor G T A = 5 C G/A Secondary Hall Coupling Factor G T A = 5 C.8 G/A Hall plate Sensitivity Matching Sens match T A = 5 C ± % Rise Time t r I P = I P (max), T A = 5 C, C L = nf 3 μs Propagation Delay t pd I P = I P (max), T A = 5 C, C L = nf μs Response Time t RESPONSE I P = I P (max), T A = 5 C, C L = nf 4 μs Bandwidth BW Small signal 3 db; C L = nf khz Noise Density I ND Input referenced noise density; T A = 5 C, C L = nf Noise I N Input referenced noise: C F = 4.7 nf, C L = nf, BW = 8 khz, T A = 5 C µa (rms) / Hz 7 ma (rms) Nonlinearity E LIN Through full range of I P % Sensitivity Ratiometry Coefficient Zero Current Output Ratiometry Coefficient SENS_RAT_ COEF QVO_RAT_ COEF V CC = 3. to 3.6 V, T A = 5 C.3 V CC = 3. to 3.6 V, T A = 5 C Saturation Voltage [3] V OH R L = 4.7 kω V CC.3 V V OL R L = 4.7 kω.3 V Output reaches 9% of steady-state Power-On Time t PO level, T A = 5 C, I P = I PR (max) applied 8 μs Shorted Output to Ground Current I sc(gnd) T A = 5 C 3.3 ma Shorted Output to V CC Current I sc(vcc) T A = 5 C 45 ma [] Device may be operated at higher primary current levels, I P, ambient temperatures, T A, and internal leadframe temperatures, provided the Maximum Junction Temperature, T J (max), is not exceeded. [] R F(int) forms an RC circuit via the FILTER pin. [3] The sensor IC will continue to respond to current beyond the range of I P until the high or low saturation voltage; however, the nonlinearity in this region will be worse than through the rest of the measurement range. Manchester, NH U.S.A. 5
6 xllctr-5ab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 5 5 A Sensitivity Sens I PR(min) < I P < I PR(max) 64 mv/a Zero Current Output Voltage V IOUT(Q) Unidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C.5 ±.9.5 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.9.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C 5 ±5 5 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. xllctr-ab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR A Sensitivity Sens I PR(min) < I P < I PR(max) 3 mv/a Zero Current Output Voltage V IOUT(Q) Unidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.8 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.8.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±4 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. Manchester, NH U.S.A. 6
7 xllctr-au PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR A Sensitivity Sens I PR(min) < I P < I PR(max) 64 mv/a Zero Current Output Voltage V IOUT(Q) Unidirectional; I P = A ACCURACY PERFORMANCE V CC. V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C.5 ±.9.5 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C ±.9 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C 5 ±5 5 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. xllctrau PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR A Sensitivity Sens I PR(min) < I P < I PR(max) 3 mv/a Zero Current Output Voltage V IOUT(Q) Unidirectional; I P = A ACCURACY PERFORMANCE V CC. V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.8 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.8.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±4 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. Manchester, NH U.S.A. 7
8 xllctrab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR A Sensitivity Sens I PR(min) < I P < I PR(max) 66 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.8 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.8.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±4 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. xllctrab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 3 3 A Sensitivity Sens I PR(min) < I P < I PR(max) 44 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.7 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.7.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±3 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. Manchester, NH U.S.A. 8
9 xllctrab-h PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 3 3 A Sensitivity Sens I PR(min) < I P < I PR(max) 44 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.7 % I P = I PR(max) ; T A = 4 C to 5 C ±.5 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.7.5 % I P = I PR(max) ; T A = 4 C to 5 C.5 ±.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±3 mv I P = A; T A = 4 C to 5 C ±6 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. xllctrau PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 3 A Sensitivity Sens I PR(min) < I P < I PR(max) 88 mv/a Zero Current Output Voltage V IOUT(Q) Unidirectional; I P = A ACCURACY PERFORMANCE V CC. V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ±.8 % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.8.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±4 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. Manchester, NH U.S.A. 9
10 xllctrab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 4 4 A Sensitivity Sens I PR(min) < I P < I PR(max) 33 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ± % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±3 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. xllctr-5ab PERFORMANCE CHARACTERISTICS: T A Range L, valid at T A = 4 C to 5 C, V CC = 3.3 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [] Max. Unit NOMINAL PERFORMANCE Current Sensing Range I PR 5 5 A Sensitivity Sens I PR(min) < I P < I PR(max) 6.4 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [] E TOT I P = I PR(max) ; T A = 5 C to 5 C ± % I P = I PR(max) ; T A = 4 C to 5 C 6 ±4 6 % TOTAL OUTPUT ERROR COMPONENTS [3] E TOT = E SENS + x V OE /(Sens x I P ) Sensitivity Error E sens I P = I PR(max) ; T A = 5 C to 5 C.5 ±.5 % I P = I PR(max) ; T A = 4 C to 5 C 5.5 ±4 5.5 % Offset Voltage V OE I P = A; T A = 5 C to 5 C ±3 mv I P = A; T A = 4 C to 5 C 3 ±5 3 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift 3 ± 3 % Total Output Error Lifetime Drift E tot_drift 3 ± 3 % [] Typical values with ± are 3 sigma values [] Percentage of I P, with I P = I PR(max). [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. Manchester, NH U.S.A.
11 Zero Current Output Voltage vs. Temperature CHARACTERISTIC PERFORMANCE xllctr-au Offset Voltage vs. Temperature V (mv) IOUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature Sensitivity Error vs. Temperature 68 Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity vs. Temperature Total Error at I PR(max) vs. Temperature. Nonlinearity (%) Total Error (%) Sigma Average Sigma Manchester, NH U.S.A.
12 xllctrau Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V IOUT(Q) (mv) Temperature ( C) Offset Voltage (mv) Temperature ( C) Sensi vity vs. Temperature Sensi vity Error vs. Temperature Sensi vity (mv/a) Temperature ( C) Sensi vity Error (%) Temperature ( C) Nonlinearity (%) Nonlinearity vs. Temperature Temperature ( C) Total Error (%) Total Error at I PR(max) vs. Temperature Temperature ( C) +3 Sigma Average Sigma Manchester, NH U.S.A.
13 xllctrab Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V (mv) IOUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity vs. Temperature Total Error at I PR(max) vs. Temperature..8.6 Nonlinearity (%) Total Error (%) Sigma Average Sigma Manchester, NH U.S.A. 3
14 xllctrab Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V (mv) IOUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity vs. Temperature Total Error at I PR(max) vs. Temperature..8.6 Nonlinearity (%) Total Error (%) Sigma Average Sigma Manchester, NH U.S.A. 4
15 xllctrab-h Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V IOUT(Q) (mv) Temperature ( C) Offset Voltage (mv) Temperature ( C) 46 Sensitivity vs. Temperature 3 Sensitivity Error vs. Temperature Sensitivity (mv/a) Sensitivity Error (%) - 4 Temperature ( C) Temperature ( C) Nonlinearity (%) Nonlinearity vs. Temperature Temperature ( C) Total Error (%) Total Error at I PR(max) vs. Temperature 3 - Temperature ( C) +3 Sigma Average Sigma Manchester, NH U.S.A. 5
16 xllctrab Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V (mv) IOUT(Q) Offset Voltage (mv) Sensitivity vs. Temperature Sensitivity Error vs. Temperature 33 Sensitivity (mv/a) Sensitivity Error (%) Nonlinearity vs. Temperature Total Error at I PR(max) vs. Temperature..8.6 Nonlinearity (%) Total Error (%) Sigma Average Sigma Manchester, NH U.S.A. 6
17 CHARACTERISTIC PERFORMANCE ACS74 TYPICAL FREQUENCY RESPONSE 5 ACS74 Frequency Response Magnitude [db] Frequency [Hz] 5 Phase [ ] Frequency [Hz] Manchester, NH U.S.A. 7
18 APPLICATION INFORMATION Estimating Total Error vs. Sensed Current The Performance Characteristics tables give distribution (±3 sigma) values for Total Error at I PR(max) ; however, one often wants to know what error to expect at a particular current. This can be estimated by using the distribution data for the components of Total Error, Sensitivity Error, and Offset Voltage. The ±3 sigma value for Total Error (E TOT ) as a function of the sensed current (I P ) is estimated as: ( ) V OE E TOT (I) P = E SENS + Sens I P Here, E SENS and V OE are the ±3 sigma values for those error terms. If there is an average sensitivity error or average offset voltage, then the average Total Error is estimated as: V OE AVG E TOT (I) P = E SENS + AVG AVG Sens I P The resulting total error will be a sum of E TOT and E TOT_AVG. Using these equations and the 3 sigma distributions for Sensitivity Error and Offset Voltage, the Total Error vs. sensed current (I P ) is below for the ACS75LLCTRAB. As expected, as one goes towards zero current, the error in percent goes towards infinity due to division by zero. Total Error (% of Current Measured) Current (A) ºC + 3σ ºC 3σ 5ºC + 3σ 5ºC 3σ 85ºC + 3σ 85ºC 3σ Figure : Predicted Total Error as a Function of the Sensed Current for the ACS75LLCTRAB Manchester, NH U.S.A. 8
19 Thermal Rise vs. Primary Current Self-heating due to the flow-off current should be considered during the design of any current sensing system. The sensor, printed circuit board (PCB), and contacts to the PCB will generate heat as current moves through the system. The thermal response is highly dependent on PCB layout, copper thickness, cooling techniques, and the profile of the injected current. The current profile includes peak current, current on-time, and duty cycle. While the data presented in this section was collected with direct current (DC), these numbers may be used to approximate thermal response for both AC signals and current pulses. The plot in Figure shows the measured rise in steady-state die temperature of the ACS75 versus DC input current at an ambient temperature, T A, of 5 C. The thermal offset curves may be directly applied to other values of T A. ASEK74/5 Evaluation Board Layout Thermal data shown in Figure was collected using the ASEK74/5 Evaluation Board (TED-85-74). This board includes 5 mm of oz. copper (.694 mm) connected to pins and, and to pins 3 and 4, with thermal vias connecting the layers. Top and bottom layers of the PCB are shown below in Figure 3. Figure : Self Heating in the LA Package Due to Current Flow The thermal capacity of the ACS75 should be verified by the end user in the application s specific conditions. The maximum junction temperature, T J(MAX) (65 C), should not be exceeded. Further information on this application testing is available in the DC and Transient Current Capability application note on the Allegro website. Figure 3: Top and Bottom Layers for ASEK74/5 Evaluation Board Gerber files for the ASEK74/5 evaluation board are available for download from our website. See the technical documents section of the ACS75 device webpage. Manchester, NH U.S.A. 9
20 DEFINITIONS OF ACCURACY CHARACTERISTICS Sensitivity (Sens). The change in sensor IC output in response to a A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G/ A) ( G =. mt) and the linear IC amplifier gain (mv/g). The linear IC amplifier gain is programmed at the factory to optimize the sensitivity (mv/a) for the full-scale current of the device. Nonlinearity (E LIN ). The nonlinearity is a measure of how linear the output of the sensor IC is over the full current measurement range. The nonlinearity is calculated as: E LIN = V (I ) V IOUT PR(max) IOUT(Q) V (I /) V IOUT PR(max) IOUT(Q) (%) where V IOUT (I PR (max)) is the output of the sensor IC with the maximum measurement current flowing through it and V IOUT (I PR (max)/) is the output of the sensor IC with half of the maximum measurement current flowing through it. Zero Current Output Voltage (V IOUT(Q) ). The output of the sensor when the primary current is zero. For a unipolar supply voltage, it nominally remains at.5 V CC for a bidirectional device and. V CC for a unidirectional device. For example, in the case of a bidirectional output device, V CC = 3.3 V translates into V IOUT(Q) =.65 V. Variation in V IOUT(Q) can be attributed to the resolution of the Allegro linear IC quiescent voltage trim and thermal drift. Offset Voltage (V OE ). The deviation of the device output from its ideal quiescent value of.5 V CC (bidirectional) or. V CC (unidirectional) due to nonmagnetic causes. To convert this voltage to amperes, divide by the device sensitivity, Sens. Total Output Error (E TOT ). The difference between the current measurement from the sensor IC and the actual current (I P ), relative to the actual current. This is equivalent to the difference between the ideal output voltage and the actual output voltage, divided by the ideal sensitivity, relative to the current flowing through the primary conduction path: E TOT (I) P = V IOUT_ideal(I P) V IOUT(I P) Sens (I ) I ideal P P (%) The Total Output Error incorporates all sources of error and is a function of I P. At relatively high currents, E TOT will be mostly due to sensitivity error, and at relatively low currents, E TOT will be mostly due to Offset Voltage (V OE ). In fact, at I P =, E TOT approaches infinity due to the offset. This is illustrated in Figure 4 and Figure 5. Figure 4 shows a distribution of output voltages versus I P at 5 C and across temperature. Figure 5 shows the corresponding E TOT versus I P. I P (A) I P I PR (min) Accuracy Across Temperature Accuracy at 5 C Only Accuracy at 5 C Only Accuracy Across Temperature Increasing V IOUT (V) A Decreasing V IOUT (V) Accuracy Across Temperature Accuracy at 5 C Only Ideal V IOUT Figure 4: Output Voltage versus Sensed Current E TOT +E TOT V IOUT(Q) Full Scale I P I PR (max) +I P (A) Across Temperature 5 C Only Figure 5: Total Output Error versus Sensed Current +I P Manchester, NH U.S.A.
21 Sensitivity Ratiometry Coefficient (SENS_RAT_COEF). The coefficient defining how the sensitivity scales with V CC. The ideal coefficient is, meaning the sensitivity scales proportionally with V CC. A % increase in V CC results in a % increase in sensitivity. A coefficient of. means that the sensitivity increases by % more than the ideal proportionality case. This means that a % increase in V CC results in an % increase in sensitivity. This relationship is described by the following equation: Sens(V ) = Sens(3.3 V) CC + (V 3.3 V) SENS_RAT_COEF CC 3.3 V This can be rearranged to define the sensitivity ratiometry coefficient as: SENS_RAT_COEF = Sens(V CC ) 3.3 V Sens(3.3 V) (V CC 3.3 V) Zero Current Output Ratiometry Coefficient (QVO_RAT_ COEF). The coefficient defining how the zero current output voltage scales with V CC. The ideal coefficient is, meaning the output voltage scales proportionally with V CC, always being equal to V CC /. A coefficient of. means that the zero current output voltage increases by % more than the ideal proportionality case. This means that a % increase in V CC results in an % increase in the zero current output voltage. This relationship is described by the following equation: VIOUTQ(V ) = VIOUTQ(3.3 V) CC + (V 3.3 V) QVO_RAT_COEF CC 3.3 V This can be rearranged to define the zero current output ratiometry coefficient as: QVO_RAT_COEF = VIOUTQ(V ) CC 3.3 V VIOUTQ(3.3 V) (V CC 3.3 V) Manchester, NH U.S.A.
22 DEFINITIONS OF DYNAMIC RESPONSE CHARACTERISTICS Power-On Time (t PO ). When the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. Power-On Time, t PO, is defined as the time it takes for the output voltage to settle within ±% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage, V CC (min), as shown in the chart at right. V V CC (typ.) 9% V IOUT V CC (min.) V CC V IOUT t t t PO t = time at which power supply reaches minimum specified operating voltage t = time at which output voltage settles within ±% of its steady state value under an applied magnetic field Figure 6: Power-On Time (t PO ) t Rise Time (t r ). The time interval between a) when the sensor IC reaches % of its full scale value, and b) when it reaches 9% of its full scale value. The rise time to a step response is used to derive the bandwidth of the current sensor IC, in which ƒ( 3 db) =.35 / t r. Both t r and t RESPONSE are detrimentally affected by eddy current losses observed in the conductive IC ground plane. Propagation Delay (t pd ). The propagation delay is measured as the time interval a) when the primary current signal reaches % of its final value, and b) when the device reaches % of its output corresponding to the applied current. (%) 9 Primary Current V IOUT Rise Time, tr Propagation Delay, tpd Figure 7: Rise Time (t r ) and Propagation Delay (t pd ) t Response Time (t RESPONSE ). The time interval between a) when the primary current signal reaches 9% of its final value, and b) when the device reaches 9% of its output corresponding to the applied current. (%) 9 Primary Current V IOUT Response Time, tresponse Figure 8: Response Time (t RESPONSE ) t Manchester, NH U.S.A.
23 PACKAGE OUTLING DRAWING For Reference Only Not for Tooling Use (Reference MSAA) Dimensions in millimeters NOTTO SCALE Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 4.9 ± A 3.9 ±. 6. ±. NNNNNNN PPT-AAA LLLLL.4 REF 8X. C Branded Face.75 MAX SEATING PLANE C BSC SEATING PLANE GAUGE PLANE B A Standard Branding Reference View N = Device part number P= Package Designator T= Device temperature range A=Amperage L= Lot number Belly Brand = Country of Origin Terminal # mark area BSC.5. B C Branding scale and appearance at supplier discretion Reference land pattern layout (reference IPC735 SOIC7P6X75-8M); all pads a minimum of. mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances Package Outline C PCB Layout Reference View Slot in PCB to maintain 4. mm creepage once part is on PCB C PCB Layout Reference View For PCB assemblies that cannot support a slotted design, the above stretched footprint may be used. Figure 9: Package LC, 8-Pin SOICN Manchester, NH U.S.A. 3
24 Revision History Number Change Pages Responsible Date Initial Release All A. Latham January 9, 5 3 Added ACS75LLCTRAU-T to Selection Guide and Performance Characteristics charts, and corrected Sensitivity Error; added xllctrau Characteristic Performance charts. Added ACS75LLCTRAU-T to Selection Guide and Performance Characteristics charts. Added ACS75LLCTR-5AB-T to Selection Guide and Performance Characteristics charts., 6-8, A. Latham September 8, 5, 8 A. Latham December, 5, 9 W. Bussing March 7, 7 4 Added AEC-Q qualified status W. Bussing June 8, 7 5 Added ACS75LLCTR-5AB-T and ACS75LLCTR-AB-T to Selection Guide and Performance Characteristics charts., 5 M. McNally November 5, 7 6 Updated Clearance and Creepage rating values 3 W. Bussing January, 8 7 Added Dielectric Surge Strength Test Voltage characteristic Added Common Mode Field Rejection Ratio characteristic 5 W. Bussing January 3, 8 8 Updated PCB Layout References in Package Outline Drawing W. Bussing March 9, 8 9 Added Typical Frequency Response plots 6 W. Bussing June, 8 Added Thermal Rise vs. Primary Current and ASEK74/5 Evaluation Board Layout to the Applications Information section 8 W. Bussing July 3, 8 Added ACS75LLCTRAB-T-H to Selection Guide and Performance Characteristic Charts., 9, 5 M. McNally July 3, 8 Updated certificate numbers V. Mach December 3, 8 Copyright 8, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copies of this document are considered uncontrolled documents. For the latest version of this document, visit our website: Manchester, NH U.S.A. 4
ACS725. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small Footprint SOIC8 Package ACS725
FEATURES AND BENEFITS AEC-Q qualified Differential Hall sensing rejects common-mode fields. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated shield
More informationACS724. Automotive-Grade, Galvanically Isolated Current Sensor IC With Common-Mode Field Rejection in a Small-Footprint SOIC8 Package ACS724
FEATURES AND BENEFITS AEC-Q1 qualified Differential Hall sensing rejects common-mode fields 1. mω primary conductor resistance for low power loss and high inrush current withstand capability Integrated
More informationHall Effect Linear Current Sensor with Overcurrent Fault Output for <100 V Isolation Applications
Fault Output for
More information3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection
Fully Integrated Current Sensor IC 3.3V Power Supply Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s provides economical and precise solutions for AC or DC current
More informationIsolated Current Sensor with Common Mode Field Rejection
Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The SENKO SC820 provides economical and precise solutions for AC or DC current sensing in industrial,
More informationHall Effect Linear Current Sensor with Overcurrent Fault Output for <100 V Isolation Applications
Fault Output for
More informationIsolated Current Sensor with Common Mode Field Rejection
Fully Integrated Current Sensor IC Isolated Current Sensor with Common Mode Field Rejection Description The Senko Micro s SC810 provides economical and precise solutions for AC or DC current sensing in
More informationAPS12205, APS12215, and APS12235 High-Temperature Hall-Effect Latches for Low Voltage Applications
FEATURES AND BENEFITS Optimized for applications with regulated power rails Operation from to. V AEC-Q100 automotive qualified Operation up to 17 C junction temperature Dynamic offset cancellation Resistant
More informationA1245. Chopper-Stabilized, Two Wire Hall-Effect Latch PACKAGES
FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More informationPrecision Hall-Effect Switch for Consumer and Industrial Applications
FEATURES AND BENEFITS Unipolar switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 40 C to 175 C junction temperature Output short-circuit and
More informationA1126. Chopper-Stabilized Omnipolar Hall-Effect Switch DESCRIPTION FEATURES AND BENEFITS. PACKAGES: Not to scale. Functional Block Diagram
FEATURES AND BENEFITS AEC-Q1 automotive qualified Omnipolar operation Low switchpoint drift Superior temperature stability Insensitive to physical stress Reverse-battery protection Robust EMC capability
More informationHigh-Temperature Precision Hall-Effect Switch
- FEATURES AND BENEFITS Unipolar switchpoints ASIL A functional safety compliance Automotive-grade ruggedness and fault tolerance Extended AEC-Q qualification Reverse-battery and 4 V load dump protection
More informationHall-Effect Latch / Bipolar Switch
2 - FEATURES AND BENEFITS AEC-Q1 automotive qualified Quality managed (QM), ISO 26262 compliant High-speed, 4-phase chopper stabilization Low operating voltage down to 3 V High sensitivity Stable switchpoints
More informationACS772. High Accuracy, Hall-Effect-Based, 200 khz Bandwidth, Galvanically Isolated Current Sensor IC with 100 µω Current Conductor
FEATURES AND BENEFITS AEC-Q100 Grade 1 qualified Typical of 2.5 μs output response time 5 V supply operation Ultra-low power loss: 100 μω internal conductor resistance Reinforced galvanic isolation allows
More informationAPS13290 and APS13291 Precision Hall-Effect Latches for Consumer and Industrial Applications
APS329 and FEATURES AND BENEFITS Symmetrical latch switchpoints Superior ruggedness and fault tolerance Reverse-polarity and transient protection Operation from 4 C to 7 C junction temperature Output short-circuit
More informationA1244 Chopper-Stabilized, Two Wire Hall-Effect Latch
Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More informationA4480 Wide Input 5 V, 50 ma, Automotive Regulator with Output Short-to-Battery Protection and Power OK
FEATURES AND BENEFITS Automotive AEC-Q100 qualified Wide operating range of 3.5 to 8 V, with 40 V load dump rating Linear regulator output with foldback short-circuit and short-to-battery protection Boost
More informationDiscontinued Product
Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: November 1, 21 Recommended
More informationContinuous-Time Switch Family
Features and Benefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed
More informationChopper-Stabilized, Two Wire Hall-Effect Switches
FEATURES AND BENEFITS High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More informationACS770xCB. Thermally Enhanced, Fully Integrated, Hall Effect-Based High Precision Linear Current Sensor IC with 100 µω Current Conductor
Features and Benefits Industry-leading total output accuracy achieved with new piecewise linear digital temperature compensation of offset and sensitivity Industry-leading noise performance through proprietary
More informationChopper-Stabilized Precision Hall-Effect Latches
Features and Benefits AEC-Q1 automotive qualified Symmetrical latch switchpoints Resistant to physical stress Superior temperature stability Output short-circuit protection Operation from unregulated supply
More informationACS781xLR. High-Precision Linear Hall-Effect-Based Current Sensor IC With 200 µω Current Conductor
FEATURES AND BENEFITS Core-less, micro-sized, 100 A continuous current package Ultra-low power loss: 200 µω internal conductor resistance Immunity to common-mode field interference Greatly improved total
More informationACS770xCB. Thermally Enhanced, Fully Integrated, Hall-Effect-Based High-Precision Linear Current Sensor IC with 100 µω Current Conductor
FEATURES AND BENEFITS Industry-leading total output accuracy achieved with new piecewise linear digital temperature compensation of offset and sensitivity Industry-leading noise performance through proprietary
More informationAUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08
AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08 Introduction The HAH1BVW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications
More informationContinuous-Time Switch Family
Features and enefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed
More informationContinuous-Time Switch Family
FEATURES AN BENEFITS AEC-Q1 automotive qualified Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer GO-SME series I P N = 10 20 A Ref: GO 10-SME, GO 20-SME For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
More information5-V Low Drop Fixed Voltage Regulator TLE
5-V Low Drop Fixed Voltage Regulator TLE 427-2 Features Output voltage tolerance ±2% 65 ma output current capability Low-drop voltage Reset functionality Adjustable reset time Suitable for use in automotive
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer HO-NP series I P N = 4, 6, 12, 15 A Ref: HO 4-NP, HO 6-NP, HO 12-NP, HO 15-NP For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer GO-SMS series I P N = 10... 30 A Ref: GO 10-SMS, GO 20-SMS, GO 30-SMS For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the
More informationACS780xLR. High-Precision Linear Hall-Effect-Based Current Sensor IC With 200 µω Current Conductor
FEATURES AND BENEFITS Core-less, micro-sized, 100 A continuous current package Ultra-low power loss: 200 µω internal conductor resistance Immunity to common-mode field interference Greatly improved total
More informationTLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1,
Low Dropout Fixed Voltage Regulator TLE42644G Data Sheet Rev. 1.1, 214-7-3 Automotive Power Low Dropout Fixed Voltage Regulator TLE42644G 1 Overview Features Output Voltage 5 V ± 2 % up to Output Currents
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer GO-SMS/SP3 series I P N = 10... 30 A Ref: GO 10-SMS/SP3, GO 20-SMS/SP3, GO 30-SMS/SP3 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the
More informationChopper-Stabilized, Two Wire Hall-Effect Switches
Features and Benefits High speed, 4-phase chopper stabilization Low switchpoint drift throughout temperature range Low sensitivity to thermal and mechanical stresses On-chip protection Supply transient
More information5-V Low Drop Fixed Voltage Regulator TLE 4275
5-V Low Drop Fixed Voltage Regulator TLE 4275 Features Output voltage 5 V ± 2% Very low current consumption Power-on and undervoltage reset Reset low down to V Q = 1 V Very low-drop voltage Short-circuit-proof
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer GO-SMS/SP3 series I P N = 10... 30 A Ref: GO 10-SMS/SP3, GO 20-SMS/SP3, GO 30-SMS/SP3 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the
More informationNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
Rev. 0 26 September 2006 Product data sheet. Product profile. General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package..2
More informationPRODUCTION DATA SHEET
The positive voltage linear regulator is configured with a fixed 3.3V output, featuring low dropout, tight line, load and thermal regulation. VOUT is controlled and predictable as UVLO and output slew
More informationCA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5
Data Sheet August FN8. General Purpose NPN Transistor Array The consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected
More informationDG211. Features. SPST 4-Channel Analog Switch. Part Number Information. Functional Block Diagrams. Pinout. Data Sheet December 21, 2005 FN3118.
Data Sheet FN3118.4 SPST 4-Channel Analog Switch The is a low cost, CMOS monolithic, Quad SPST analog switch. It can be used in general purpose switching applications for communications, instrumentation,
More informationHigh-Supply-Voltage, Precision Voltage Reference in SOT23 MAX6035
19-2606; Rev 3; 11/06 High-Supply-Voltage, Precision General Description The is a high-voltage, precision micropower voltage reference. This three-terminal device is available with output voltage options
More informationAUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 500-S
AUTOMOTIE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY Introduction The HC5FW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications with
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer HO-NP/SP33 series I PN = 8, 15, 25 A Ref: HO 8-NP/SP33, HO 15-NP/SP33, HO 25-NP/SP33 For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer LDSR 0.3-TP/SP1 I P R N = 300 ma For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit. Features Closed
More informationGM4275 GM4275 V2.03. Features. Description. Applications. Block Diagram WIDE INPUT RANGE 5V LOW DROPOUT REGULATOR WITH RESET FLAG
Description The GM4275 series of fixed output, micro-power voltage regulators is designed for applications which require wide input voltage range up to 45V. The GM4275 is an excellent choice for the use
More informationPackage Type. IXDD614PI 8-Pin DIP Tube 50 OUT 8-Lead Power SOIC with Exposed Metal Back Tube 100
IXD_64 4-Ampere Low-Side Ultrafast MOSFET Drivers Features 4A Peak Source/Sink Drive Current Wide Operating Voltage Range: 4.V to V - C to +2 C Extended Operating Temperature Range Logic Input Withstands
More information65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA
Rev. 1 17 July 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
More informationFeatures. Pinout. PART NUMBER PART MARKING TAPE & REEL PKG PKG. DWG. # EL7156CNZ (Note) (No longer available, recommended replacement: EL7156CSZ)
DATASHEET EL76 High Performance Pin Driver The EL76 high performance pin driver with three-state is suited to many ATE and level-shifting applications. The 3.A peak drive capability makes this part an
More informationTLF80511TF. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511TFV50 TLF80511TFV33. Rev. 1.
Low Dropout Linear Fixed Voltage Regulator V50 V33 Data Sheet Rev. 1.0, 2014-01-28 Automotive Power Table of Contents 1 Overview....................................................................... 3
More informationFor the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the secondary circuit.
Current Transducer HO-NSM series I PN = 8, 15, 25 A Ref: HO 8-NSM, HO 15-NSM, HO 25-NSM For the electronic measurement of current: DC, AC, pulsed..., with galvanic separation between the primary and the
More informationAUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC6H 400-S/SP1
AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC6H 400-S/SP1 Picture of product with pencil Introduction The HC6H family is for the electronic measurement of DC, AC or pulsed currents in high power
More informationAUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 200-S/SP1
AUTOMOTIE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HC5FW 200-S/SP1 Introduction The HC5FW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications
More informationLow Drop Voltage Regulator TLE
Low Drop Voltage Regulator TLE 4296-2 Features Two versions: 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption Wide operation
More information5-V Low Drop Voltage Regulator TLE 4290
5-V Low Drop Voltage Regulator TLE 429 Features Output voltage 5 V ± 2% Very low current consumption 45 ma current capability Power Good Feature Very low-drop voltage Short-circuit-proof Reverse polarity
More informationLow Drop Voltage Regulator TLE 4296
Low Drop Voltage Regulator TLE 4296 Features Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption
More information150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
More informationDATASHEET. Features. Applications EL7155. High Performance Pin Driver. FN7279 Rev 3.00 Page 1 of 10. October 24, FN7279 Rev 3.
DATASHEET EL71 High Performance Pin Driver FN779 Rev 3. The EL71 high performance pin driver with 3-state is suited to many ATE and level-shifting applications. The 3.A peak drive capability makes this
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device
More informationHIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS
DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline
More informationBCM857BV; BCM857BS; BCM857DS
BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated
More information74HC86. Quad 2 Input Exclusive OR Gate. High Performance Silicon Gate CMOS
Quad 2 Input Exclusive OR Gate MARKING DIAGRAMS High Performance Silicon Gate CMOS The is identical in pinout to the LS86. The device inputs are compatible with standard CMOS outputs; with pullup resistors,
More informationHIGH SPEED TRANSISTOR OPTOCOUPLERS
SINGLECHANNEL: PACKAGE SCHEMATIC N/C V CC + V CC V F + V F 7 V B _ 7 V 0 _ V O _ V 0 V F N/C 4 5 GND + 4 5 GND,,, Pin 7 is not connected in Part Number / DESCRIPTION The /, / and / optocouplers consist
More informationPT5108. High-PSRR 500mA LDO GENERAL DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATIONS. Ripple Rejection vs Frequency. Ripple Rejection (db)
GENERAL DESCRIPTION The PT5108 is a low-dropout voltage regulator designed for portable applications that require both low noise performance and board space. Its PSRR at 1kHz is better than 70dB. The PT5108
More informationLow Voltage 2-1 Mux, Level Translator ADG3232
Low Voltage 2-1 Mux, Level Translator ADG3232 FEATURES Operates from 1.65 V to 3.6 V Supply Rails Unidirectional Signal Path, Bidirectional Level Translation Tiny 8-Lead SOT-23 Package Short Circuit Protection
More informationRef: HLSR 16-PW; HLSR 32-PW; HLSR 40-PW-000; HLSR 50-PW-000,
Digital Current Transducer HLSR-PW series I P N = 16... 50 A Ref: HLSR 16-PW; HLSR 32-PW; HLSR 40-PW-000; HLSR 50-PW-000, Bitstream output from on onboard Sigma Delta modulator. For the electronic measurement
More informationTLF80511EJ. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33. Rev. 1.
Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33 Data Sheet Rev. 1.0, 2014-11-17 Automotive Power Table of Contents 1 Overview.......................................................................
More informationIX4340NE. Automotive Grade 5-Ampere, Dual Low-Side MOSFET Driver INTEGRATED CIRCUITS DIVISION. Features. Description. Applications
Automotive Grade -Ampere, Dual Low-Side MOSFET Driver Features AEC-Q100 qualified Two independent drivers, each capable of sourcing and sinking A V to 20V supply voltage range AEC-Q100 Grade 1-0 C to +12
More informationHIGH SPEED TRANSISTOR OPTOCOUPLERS
DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact pin small outline package. A separate connection
More informationHAL501...HAL506, HAL508 Hall Effect Sensor ICs MICRONAS INTERMETALL MICRONAS. Edition May 5, DS
MICRONAS INTERMETALL HAL1...HAL, HAL Hall Effect Sensor ICs Edition May, 1997 1--1DS MICRONAS HAL1...HAL HAL Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at khz
More informationNPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Rev. 02 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD)
More information5-V Low Drop Fixed Voltage Regulator TLE
5- Low Drop Fixed oltage Regulator TLE 471- Features Output voltage tolerance ±% Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 4 Overvoltage protection
More informationPrecision, Micropower, Low-Dropout, High- Output-Current, SO-8 Voltage References
19-165; Rev ; 7/ Precision, Micropower, Low-Dropout, High- General Description The MAX6167 are precision, low-dropout, micropower voltage references. These three-terminal devices operate with an input
More informationST3L01 TRIPLE VOLTAGE REGULATOR
TRIPLE VOLTAGE REGULATOR DUAL INPUT VOLTAGE (12V AND 5V) TRIPLE OUTPUT VOLTAGE (2.6V, 3.3V, 8V) 2.6V GUARANTEED I OUT UP TO 1.2A 3.3V GUARANTEED I OUT UP TO 1.0A 8V GUARANTEED I OUT UP TO 200mA THERMAL
More informationData Sheet, Rev. 1.1, February 2008 TLE4294GV50. Low Drop Out Voltage Regulator. Automotive Power
Data Sheet, Rev. 1.1, February 2008 TLE4294GV50 Low Drop Out Voltage Regulator Automotive Power Low Drop Out Voltage Regulator TLE4294GV50 1 Overview Features Output voltage tolerance ±4% Very low drop
More informationFAN ma, Low-IQ, Low-Noise, LDO Regulator
April 2014 FAN25800 500 ma, Low-I Q, Low-Noise, LDO Regulator Features V IN: 2.3 V to 5.5 V V OUT = 3.3 V (I OUT Max. = 500 ma) V OUT = 5.14 V (I OUT Max. = 250 ma) Output Noise Density at 250 ma and 10
More information5-V Low Drop Fixed Voltage Regulator TLE 4279
5-V Low Drop Fixed Voltage Regulator TLE 4279 Features Output voltage tolerance ±2% 15 ma current capability Very low current consumption Early warning Reset output low down to V Q = 1 V Overtemperature
More informationRP mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information
RP122 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RP122 is designed for portable RF and wireless applications with demanding performance and space requirements. The RP122
More informationA1321, A1322, and A1323
,, Features and Benefits Temperature-stable quiescent output voltage Precise recoverability after temperature cycling Output voltage proportional to magnetic flux density Ratiometric rail-to-rail output
More informationTC ma, Tiny CMOS LDO With Shutdown. General Description. Features. Applications. Package Types SOT-23 SC-70
1 ma, Tiny CMOS LDO With Shutdown Features Space-saving -Pin SC-7 and SOT-23 Packages Extremely Low Operating Current for Longer Battery Life: 3 µa (typ.) Very Low Dropout Voltage Rated 1 ma Output Current
More informationAOZ1336DI. Single Channel Smart Load Switch. Features. General Description. Applications. Typical Application AOZ1336DI
Single Channel Smart Load Switch General Description The AOZ1336DI is a single channel load switch with typical 27mΩ on-resistance in a small package. It contains an n-channel MOSFET for up to 5.5V input
More informationIFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1.
1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV5 Data Sheet Rev. 1.1, 21-7-2 Standard Power 1A Low-Dropout Linear Voltage Regulator IFX8117 1 Overview Features 5 V, 3.3 V and
More informationUltra-Low-Power Precision Series Voltage Reference MAX6029. Features. General Description. Ordering Information. Applications.
MAX629 General Description The MAX629 micropower, low-dropout bandgap voltage reference combines ultra-low supply current and low drift in a miniature 5-pin SOT23 surface-mount package that uses 7% less
More information5 V/10 V Low Drop Voltage Regulator TLE 4266
5 /1 Low Drop oltage Regulator TLE 266 Features Output voltage 5 or 1 Output voltage tolerance ±2% 12 ma current capability ery low current consumption Low-drop voltage Overtemperature protection Reverse
More information2 Input NAND Gate L74VHC1G00
Input NAND Gate The is an advanced high speed CMOS input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
More informationDual Low Dropout Voltage Regulator
Dual Low Dropout Voltage Regulator TLE 4473 GV55-2 Features Stand-by output 190 ma; 5 V ± 2% Main output: 300 ma, 5 V tracked to the stand-by output Low quiescent current consumption Disable function separately
More informationTOP VIEW. Maxim Integrated Products 1
9-2266; Rev 2; 6/3 3ppm/ C, Low-Power, Low-Dropout General Description The high-precision, low-power, low-dropout voltage reference features a low 3ppm/ C (max) temperature coefficient and a low dropout
More informationLM50 SOT-23 Single-Supply Centigrade Temperature Sensor
SOT-23 Single-Supply Centigrade Temperature Sensor General Description The LM50 is a precision integrated-circuit temperature sensor that can sense a 40 C to +125 C temperature range using a single positive
More informationHigh Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
More informationTLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0,
Low Dropout Linear Voltage Regulator Data Sheet Rev. 1., 21-2-8 Automotive Power Low Dropout Linear Voltage Regulator 1 Overview Features Output voltage tolerance ±2% Low dropout voltage Output current
More informationSGM nA, Dual Rail-to-Rail I/O Operational Amplifier
SGM842 67nA, Dual Rail-to-Rail I/O GENERAL DESCRIPTION The SGM842 is guaranteed to operate with a single supply voltage as low as 1.4V, while drawing less than 67nA (TYP) of quiescent current per amplifier.
More informationSGM nA, Single Rail-to-Rail I/O Operational Amplifier
GENERAL DESCRIPTION The SGM8041 is guaranteed to operate with a single supply voltage as low as 1.4V, while drawing less than 710nA (TYP) of quiescent current. This device is also designed to support rail-to-rail
More informationLogic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000
IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationMAS Output LDO Voltage Regulator IC
DA.8 MAS 2-Output LDO Voltage Regulator IC Dual Regulator: 2 15 ma Very Low Crosstalk Low Dropout: 7 mv High Ripple Rejection: 62 db Low Noise: 3 µvrms Stable with Low-ESR Output Capacitors Separate Enable/Disable
More informationLow Drop Voltage Regulator TLE 4295
Low Drop Voltage Regulator TLE 4295 Features Four versions: 2.6 V, 3.0 V, 3.3 V, 5.0 V tolerance ±4% Very low drop voltage Output current: 30 ma Power fail output Low quiescent current consumption Wide
More informationLow-Cost, Micropower, Low-Dropout, High-Output-Current, SOT23 Voltage References
19-1613; Rev 3; 3/2 Low-Cost, Micropower, Low-Dropout, General Description The are low-cost, low-dropout (LDO), micropower voltage references. These three-terminal references are available with output
More informationLM317L, NCV317LB. 100 ma Adjustable Output, Positive Voltage Regulator LOW CURRENT THREE-TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATOR
100 ma Adjustable Output, Positive Voltage Regulator The LM317L is an adjustable 3terminal positive voltage regulator capable of supplying in excess of 100 ma over an output voltage range of 1.2 V to 37
More informationN.C. OUT. Maxim Integrated Products 1
19-2892; Rev 2; 11/6 Ultra-Low-Power Precision Series General Description The MAX629 micropower, low-dropout bandgap voltage reference combines ultra-low supply current and low drift in a miniature 5-pin
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50
More information