200 kpa On-Chip Temperature. Compensated Silicon Pressure Sensors. MPX2200 Series. Pressure. Application Examples. Features. MPX2200 Rev 13, 10/2008
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1 Pressure Rev 13, 10/ kpa On-Chip Temperature + Compensated ilicon Pressure The series devices are silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin-film resistor network integrated on-chip. The chip is laser trimmed for precise span and offset calibration and temperature compensation. They are designed for use in applications such as pump/ motor controllers, robotics, level indicators, medical diagnostics, pressure switching, barometers, altimeters, etc. eatures Temperature Compensated Over 0 C to +85 C ±0.25% Linearity (D) Easy-to-Use Chip Carrier Package Options Absolute, Differential and Gauge Options eries 0 to 200 kpa (0 to 29 psi) 40 mv ull cale pan (Typical) Application Examples Pump/Motor Control Robotics Level Detectors Medical Diagnostics Pressure witching Barometers Altimeters ORDERING INORMATION Package Case # of Ports Pressure Type Device Device Name Options No. None ingle Dual Gauge Differential Absolute Marking Unibody Package ( eries) A Tray 344 A D Tray 344 D DP Tray 344C DP AP Tray 344B AP GP Tray 344B GP UNIBODY PACKAGE A/D CAE AP/GP CAE 344B-01 DP CAE 344C-01
2 Pressure Operating Characteristics Table 1. Operating Characteristics (V = 10 V DC, T A = 25 C unless otherwise noted, P1 > P2) Characteristic ymbol Min Typ Max Units Differential Pressure Range (1) upply Voltage (2) P OP kpa V V DC upply Current I O 6.0 madc ull cale pan (3) Offset (4) V mv V O mv ensitivity ΔV/ΔΡ 0.2 mv/kpa Linearity D eries A eries %V Pressure Hysteresis(0 to 200 kpa) ±0.1 %V Temperature Hysteresis(- 40 C to +125 C) ±0.5 %V Temperature Coefficient of ull cale pan TCV %V Temperature Coefficient of Offset TCV O mv Input Impedance Z IN Ω Output Impedance Z OUT Ω Response Time (5) (10% to 90%) Warm-Up Time (6) Offset tability (7) t R 1.0 ms 20 ms ±0.5 %V kpa (kilopascal) equals psi. 2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional error due to device self-heating. 3. ull cale pan (V ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 4. Offset (V O ) is defined as the output voltage at the minimum rated pressure. 5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure is stabilized. 7. Offset stability is the product s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test. 2
3 Maximum Ratings Pressure Table 2. Maximum Ratings (1) Rating Max Value Unit Maximum Pressure (P1 > P2) 800 kpa torage Temperature 40 to +125 C Operating Temperature 40 to +125 C 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. Voltage Output versus Applied Differential The output voltage of the differential or gauge sensor increases with increasing pressure applied to the pressure side (P1) relative to the vacuum side (P2). imilarly, output voltage increases as increasing vacuum is applied to the vacuum side (P2) relative to the pressure side (P1). igure 1 shows a block diagram of the internal circuitry on the stand-alone pressure sensor chip. V 3 ensing Element Thin ilm Temperature Compensation and Calibration Circuitry 2 +V OUT 4 V OUT 1 GND igure 1. Temperature Compensated and Calibrated Pressure ensor chematic 3
4 Pressure On-Chip Temperature Compensation and Calibration V = 10 V DC T A = 25 C P1 > P2 TYP MAX MIN kpa PI Pressure Output (mv DC ) pan Range (TYP) Offset (TYP) igure 2 shows the output characteristics of the series at 25 C. The output is directly proportional to the differential pressure and is essentially a straight line. igure 2. Output vs. Pressure Differential The effects of temperature on full scale span and offset are very small and are shown under Operating Characteristics. ilicone Gel Coat Wire Bond Differential/Gauge P1 tainless teel Metal Cover Epoxy Case Wire Bond ilicone Gel Coat Absolute P1 tainless teel Metal Cover Epoxy Case Lead rame Differential/Gauge P2 Element Bond Lead rame Absolute Element P2 Bond igure 3 illustrates the differential/gauge die in the basic chip carrier (Case 344). A silicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. The series pressure sensor operating characteristics and internal reliability and qualification tests are based on use of dry air as the pressure media. Media other than dry air may have adverse effects on sensor performance and long term reliability. Contact the factory for information regarding media compatibility in your application. LINEARITY Linearity refers to how well a transducer's output follows the equation: V OUT = V O + sensitivity x P over the operating pressure range. There are two basic methods for calculating nonlinearity: (1) end point straight line fit (see igure 4) or (2) a least squares best line fit. While a least squares fit gives the best case linearity error (lower numerical value), the calculations required are burdensome. Conversely, an end point fit will give the worst case error (often more desirable in error budget calculations) and the calculations are more straightforward for the user. reescale s specified pressure sensor linearities are based on the end point straight line method measured at the midrange pressure. igure 3. Cross ectional Diagram (not to scale) Relative Voltage Output Least quares it Exaggerated Performance Curve Offset End Point traight Line it Pressure (% ull cale) Least quare Deviation traight Line Deviation igure 4. Linearity pecification Comparison 4
5 PREURE (P1)/VACUUM (P2) IDE IDENTIICATION TABLE Pressure reescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing silicone gel which isolates the die from the environment. The reescale MPX pressure sensor is designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the following table. Table 3. Pressure (P1) ide Delineation Part Number Case Type Pressure (P1) ide Identifier D/A 344 tainless teel Cap DP 344C ide with Part Marking GP/AP 344B ide with Port Attached 5
6 PACKAGE DIMENION B J C M -T- EATING -A- PIN 1 D 4 PL R (0.005) M T G N A M L Y DAMBAR TRIM ZONE: THI I INCLUDED WITHIN DIM. "" 8 PL 4 Z NOTE: DIMENIONING AND TOLERANCING PER AME Y14.5M, CONTROLLING DIMENION: INCH. DIMENION -A- I INCLUIVE O THE MOLD TOP RING. MOLD TOP RING NOT TO EXCEED (0.630). INCHE MILLIMETER DIM MIN MAX MIN MAX A B C D G BC 2.54 BC J L M 30 NOM 30 NOM N R Y Z TYLE 1: PIN 1. GROUND 2. + OUTPUT 3. + UPPLY 4. - OUTPUT TYLE 2: PIN 1. VCC 2. - UPPLY 3. + UPPLY 4. GROUND TYLE 3: PIN 1. GND 2. -VOUT 3. V 4. +VOUT CAE IUE AA UNIBODY PACKAGE EATING -P- -T- J R C N B -Q- PORT #1 POITIVE PREURE (P1) 0.25 (0.010) M T Q PIN 1 G H D 4 PL U L K 0.13 (0.005) M Q T -A- NOTE: 1. DIMENIONING AND TOLERANCING PER ANI Y14.5M, CONTROLLING DIMENION: INCH. INCHE MILLIMETER DIM MIN MAX MIN MAX A B C D G BC 2.54 BC H J K L N P Q R U BC BC TYLE 1: PIN 1. GROUND 2. + OUTPUT 3. + UPPLY 4. - OUTPUT CAE 344B-01 IUE B UNIBODY PACKAGE 6
7 PACKAGE DIMENION R PORT #2 EATING PORT #1 EATING PORT #2 VACUUM (P2) J V C B N W G D 4 PL -Q- PIN 1 -P- -T- -T (0.010) M T Q -A- U (0.005) M T Q L H PORT #1 POITIVE PREURE (P1) K NOTE: 1. DIMENIONING AND TOLERANCING PER ANI Y14.5M, CONTROLLING DIMENION: INCH. INCHE MILLIMETER DIM MIN MAX MIN MAX A B C D G BC 2.54 BC H J K L N P Q R U BC BC V W TYLE 1: PIN 1. GROUND 2. + OUTPUT 3. + UPPLY 4. - OUTPUT CAE 344C-01 IUE B UNIBODY PACKAGE 7
ORDERING INFORMATION # of Ports Pressure Type Device Name
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Features and Benefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range Reverse battery protection Solid-state reliability Factory-programmed
AME. High PSRR, Low Noise, 600mA CMOS Regulator AME8855. n General Description. n Typical Application. n Features. n Functional Block Diagram
8855 n General Description n Typical Application The 8855 family of positive, CMOS linear regulators provide low dropout voltage(42mv@6ma), low quiescent current, and low noise CMOS LDO. These rugged devices
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LM60B LM60C 2 7V SOT-23 Temperature Sensor
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High Reliability Hallogic Hall- Effect Sensors OMH090, OMH3019, OMH3020, OMH3040, OMH3075, OMH3131 (B, S versions)
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Temperature Compensation for MEAS Pressure Sensors
INTRODUCTION Advancements in microelectronic technology have pushed silicon sensors not only toward greater sophistication and lower functional cost but also in the direction of higher performance. The
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P-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
Four-Channel Thermistor Temperature-to-Pulse- Width Converter
19-234; Rev ; 1/2 General Description The four-channel thermistor temperature-topulse-width converter measures the temperatures of up to four thermistors and converts them to a series of output pulses
AME. High PSRR, Low Noise, 600mA CMOS Regulator AME8855. General Description. Typical Application. Features. Functional Block Diagram.
8855 General Description Typical Application The 8855 family of positive, CMOS linear regulators provide low dropout voltage(42mv@6ma), low quiescent current, and low noise CMOS LDO. These rugged devices
P-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI