Freescale Semiconductor. Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated MPX5700.
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1 reescale emiconductor Integrated ilicon Pressure ensor On-hip ignal onditioned, Temperature ompensated and alibrated The series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with /D inputs. This patented, single element transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure. eatures 2.5% aximum Error over 0 to 85 Ideally uited for icroprocessor or icrocontroller-ased ystems vailable in bsolute, Differential and auge onfigurations Patented ilicon hear tress train auge Durable Epoxy Unibody Element eries Pressure Rev 9, 09/ to 700 kpa (0 to psi) 15 to 700 kpa (2.18 to psi) 0.2 to 4.7 V Output ase Device ame o. Unibody Package ( eries) ORDERI IORTIO # of Ports Pressure Type Device one ingle Dual auge Differential bsolute ame 867 P 867 P 867E X 867 D 867 D DP 867 DP P 867 P P1 867 P 867E D UIODY PKE /D E P/P/P1 E DP E / E 867E-03 X E reescale emiconductor, Inc., ll rights reserved.
2 Pressure Operating haracteristics Table 1. Operating haracteristics (V = 5.0 Vdc, T = 25 unless otherwise noted, P1 > P2. Decoupling circuit shown in required to meet electrical specifications.) Pressure Range (1) upply Voltage (2) haracteristic ymbol in Typ ax Unit auge, Differential: D bsolute: P OP kpa (kilopascal) equals psi. 2. Device is ratiometric within this specified excitation range. 3. Offset (V off ) is defined as the output voltage at the minimum rated pressure. 4. ull cale Output (V O ) is defined as the output voltage at the maximum or full rated pressure. 5. ull cale pan (V ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 6. ccuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25. Tcpan: Output deviation over the temperature range of 0 to 85, relative to 25. TcOffset: Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85, relative to 25. Variation from ominal: The variation from nominal values, for Offset or ull cale pan, as a percent of V, at Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 8. Warm-up Time is defined as the time required for the device to meet the specified output voltage after the pressure has been stabilized kpa V Vdc upply urrent I O mdc Zero Pressure Offset (3) auge, Differential (0 to 85 ) bsolute (0 to 85 ) V off Vdc ull cale Output (4) (0 to 85 ) V O Vdc ull cale pan (5) (0 to 85 ) V 4.5 Vdc ccuracy (6) (0 to 85 ) ±2.5 %V ensitivity V/P 6.4 mv/kpa Response Time (7) t R 1.0 ms Output ource urrent at ull cale Output I O+ 0.1 mdc Warm-Up Time (8) 20 ms 2 reescale emiconductor
3 aximum Ratings Table 2. aximum Ratings (1) Pressure Parametrics ymbol Value Unit aximum Pressure (2) (P2 1 tmosphere) P1 max 2800 kpa torage Temperature T stg -40 to +125 Operating Temperature T -40 to aximum Ratings apply to ase 867 only. Extended exposure at the specified limits may cause permanent damage or degradation to the device. 2. This sensor is designed for applications where P1 is always greater than, or equal to P2. P2 maximum is 500 kpa. igure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip. V 3 ensing Element Thin ilm Temperature ompensation and ain tage #1 ain tage #2 and round Reference hift ircuitry 1 V out 2 D Pins 4, 5, and 6 are no connects igure 1. ully Integrated Pressure ensor chematic reescale emiconductor 3
4 Pressure On-chip Temperature ompensation and alibration igure 3. illustrates both the Differential/auge and the bsolute ensing hip in the basic chip carrier (ase 867). fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. (or use of the D in a high-pressure cyclic application, consult the factory.) The series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use of dry air as the pressure media. edia, other than dry air, may have adverse effects on sensor. Output (V) Transfer unction: V out = V *( *P+0.04) ± Error V = 5.0 Vdc Temperature = 0 to 85 aximum performance and long-term reliability. ontact the factory for information regarding media compatibility in your application. igure 2. shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0 to 85 using the decoupling circuit shown in. The output will saturate outside of the specified pressure range. igure 4 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the /D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. inimum Typical Differential Pressure (kpa) igure 2. Output vs. Pressure Differential luoro ilicone Die oat Die tainless teel etal over luoro ilicone Die oat Die tainless teel etal over Wire ond P1 Wire ond P1 Lead rame Epoxy ase P2 DIERETIL/UE ELEET RTV Die ond Lead rame Epoxy ase igure 3. ross-ectional Diagrams (not to scale) P2 OLUTE ELEET RTV Die ond +5 V V out Output V s IP 1.0 μ 0.01 μ D 470 p igure 4. Recommended Power upply Decoupling and Output iltering (or additional output filtering, please refer to pplication ote 1646) 4 reescale emiconductor
5 PREURE (P1)/VUU (P2) IDE IDETIITIO TLE reescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing fluorosilicone gel which protects the die from harsh media. The reescale PX Pressure pressure sensor is designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the following table. Part umber ase Type Pressure (P1) ide Identifier /D 867 tainless teel ap DP 867 ide with Part arking P/P 867 ide with Port ttached / 867E ide with Port ttached X 867 ide with Port ttached reescale emiconductor 5
6 Pressure PKE DIEIO -- R POITIVE PREURE (P1) OTE: DIEIOI D TOLERI PER I Y14.5, OTROLLI DIEIO: IH. DIEIO -- I ILUIVE O THE OLD TOP RI. OLD TOP RI OT TO EXEED (0.630). ETI PLE PI 1 -T L D 6 PL (0.005) T DI D L R IHE ILLIETER I X I X O 30 O TYLE 1: PI 1. VOUT 2. ROUD 3. V 4. V1 5. V2 6. VEX TYLE 2: PI 1. OPE 2. ROUD 3. -VOUT 4. VUPPLY 5. +VOUT 6. OPE TYLE 3: PI 1. OPE 2. ROUD 3. +VOUT 4. +VUPPLY 5. -VOUT 6. OPE E IUE I ELEET PORT #1 POITIVE PREURE (P1) PORT #2 VUU (P2) ETI PLE P 0.25 (0.010) T Q X R ETI PLE PI Q- -- U W L V D 6 PL PORT #2 VUU (P2) PORT #1 POITIVE PREURE (P1) -T- -T (0.005) K OTE: 1. DIEIOI D TOLERI PER E Y14.5, OTROLLI DIEIO: IH. IHE ILLIETER DI I X I X D K L P Q R U V W X TYLE 1: PI 1. VOUT 2. ROUD 3. V 4. V1 5. V2 6. VEX E IUE PREURE D VUU IDE PORTED (DP) 6 reescale emiconductor
7 PKE DIEIO Pressure PE 1 O 2 E IUE PREURE IDE PORTED (P, P) reescale emiconductor 7
8 Pressure PKE DIEIO PE 2 O 2 E IUE PREURE IDE PORTED (P, P) 8 reescale emiconductor
9 PKE DIEIO Pressure OTE: 1. DIEIOI D TOLERI PER I Y14.5, OTROLLI DIEIO: IH. V PORT #1 POITIVE PREURE (P1) E -- -T- K D 6 PL PI (0.005) T DI D E K V IHE ILLIETER I X I X TYLE 1: PI 1. VOUT 2. ROUD 3. V 4. V1 5. V2 6. VEX E 867E-03 IUE D PREURE IDE PORTED (, ) E -T- U -Q- OTE: 1. DIEIOI D TOLERI PER I Y14.5, OTROLLI DIEIO: IH. V PORT #1 POITIVE PREURE (P1) -P (0.010) T D 6 PL 0.13 (0.005) T P Q Q K PI 1 R DI D E K P Q R U V IHE ILLIETER I X I X TYLE 1: PI 1. VOUT 2. ROUD 3. V 4. V1 5. V2 6. VEX E IUE D PREURE IDE XIL PORT (X) reescale emiconductor 9
10 How to Reach Us: Home Page: Web upport: U/Europe or Locations ot Listed: reescale emiconductor, Inc. Technical Information enter, EL East Elliot Road Tempe, rizona or Europe, iddle East, and frica: reescale Halbleiter Deutschland mbh Technical Information enter chatzbogen uenchen, ermany (English) (English) (erman) (rench) apan: reescale emiconductor apan Ltd. Headquarters RO Tower , himo-eguro, eguro-ku, Tokyo apan or support.japan@freescale.com sia/pacific: reescale emiconductor hina Ltd. Exchange uilding 23 o. 118 ianguo Road haoyang District eijing hina support.asia@freescale.com or Literature Requests Only: reescale emiconductor Literature Distribution enter or ax: LDorreescaleemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use reescale emiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reescale emiconductor reserves the right to make changes without further notice to any products herein. reescale emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does reescale emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in reescale emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. reescale emiconductor does not convey any license under its patent rights nor the rights of others. reescale emiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the reescale emiconductor product could create a situation where personal injury or death may occur. hould uyer purchase or use reescale emiconductor products for any such unintended or unauthorized application, uyer shall indemnify and hold reescale emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that reescale emiconductor was negligent regarding the design or manufacture of the part. reescale and the reescale logo are trademarks of reescale emiconductor, Inc. ll other product or service names are the property of their respective owners. reescale emiconductor, Inc ll rights reserved. Rev. 9 09/2009
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FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT TRUTH TABLE ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10161L AWLYYWW
The MC10161 is designed to decode a three bit input word to a one of eight line output. The selected output will be low while all other outputs will be high. The enable inputs, when either or both are
NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
BAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
FACT DATA 5-1 DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP
The MC113/T113 consists of o high-speed completely independent transition clocked flip-flops. The clocking operation is independent of rise and fall times of the clock waveform. The design allows operation
2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS
2N4923 is a Preferred Device MediumPower Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation
FACT DATA 5-1 DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP
The MC112/T112 consists of o high-speed completely independent transition clocked flip-flops. The clocking operation is independent of rise and fall times of the clock waveform. The design allows operation
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 648
The SN74LS194A is a High Speed 4-Bit Bidirectional Universal Shift Register. As a high speed multifunctional sequential building block, it is useful in a wide variety of applications. It may be used in
NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
SN74LS151MEL. 8 Input Multiplexer LOW POWER SCHOTTKY
8 Input Multiplexer The TTL/MSI SN74LS5 is a high speed 8-input Digital Multiplexer. It provides, in one package, the ability to select one bit of data from up to eight sources. The LS5 can be used as
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.
FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery
NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
PN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
NL17SH02. Single 2-Input NOR Gate
N7S0 Single -Input NOR Gate The N7S0 MiniGate is an advanced high speed CMOS input NOR gate in ultra small footprint. The N7S0 input structures provide protection when voltages up to 7.0 are applied, regardless
MARKING DIAGRAMS LOGIC DIAGRAM DIP PIN ASSIGNMENT ORDERING INFORMATION CDIP 16 L SUFFIX CASE 620 MC10138L AWLYYWW
The MC101 is a four bit counter capable of divide by two, five, or ten functions. It is composed of four set reset master slave flip flops. Clock inputs trigger on the positive going edge of the clock
MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
Schmitt Trigger Inputs Outputs Source/Sink 24 ma ACT132 Has TTL Compatible Inputs. ORDERING INFORMATION
The MC74AC/74ACT132 contains four 2 input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter free output signals. In addition, they have greater noise
FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.
FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
SN54/74LS147 SN54/74LS148 SN54/74LS LINE-TO-4-LINE AND 8-LINE-TO-3-LINE PRIORITY ENCODERS
10-LINE-TO-4-LINE AND 8-LINE-TO-3-LINE PRIORITY ENCODERS The SN54/ 74LS147 and the SN54/ 74LS148 are Priority Encoders. They provide priority decoding of the inputs to eure that only the highest order
LOW POWER SCHOTTKY. MARKING DIAGRAMS GUARANTEED OPERATING RANGES ORDERING INFORMATION. SN74LS37xN AWLYYWW PDIP 20 N SUFFIX CASE 738
The SN74LS373 consists of eight latches with 3-state outputs for bus organized system applications. The flip-flops appear transparent to the data (data changes asynchronously) when Latch Enable (LE) is
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
LOW POWER SCHOTTKY. MODE SELECT TRUTH TABLE ORDERING INFORMATION GUARANTEED OPERATING RANGES OPERATING MODE
The SN74S74A dual edge-triggered flip-flop utilizes Schottky TT circuitry to produce high speed D-type flip-flops. Each flip-flop has individual clear and set inputs, and also complementary and outputs.
BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon
BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2 which is designed for low power
RS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase