150EBU04. Ultrafast Soft Recovery Diode. t rr = 60ns I F(AV) = 150Amp V R = 400V. Bulletin PD rev. B 02/06
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1 Ultrafast Soft Recovery Diode 50EBU04 Features Ultrafast Recovery 75 C Operating unction Temperature Screw Mounting Only Lead-Free Plating Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced Parts Count t rr = 60ns I F(AV) = 50Amp V R = 400V Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters Max Units V R Cathode to Anode Voltage 400 V I F(AV) Continuous Forward Current, T C = 04 C 50 A I FSM Single Pulse Forward Current, T C = 25 C 500 I FRM Maximum Repetitive Forward Current 300 T, T STG Operating unction and Storage Temperatures - 55 to 75 C Square Wave, 20kHz Case Styles PowIRtab
2 Electrical T = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V BR, V r Breakdown Voltage, V I R = 200µA Blocking Voltage V F Forward Voltage V I F = 50A V I F = 50A, T = 75 C V I F = 50A, T = 25 C I R Reverse Leakage Current µa V R = V R Rated ma T = 50 C, V R = V R Rated C T unction Capacitance - - pf V R = 400V L S Series Inductance nh Measured lead to lead 5mm from package body Dynamic Recovery T = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time ns I F =.0A, di F /dt = 200A/µs, V R = 30V T = 25 C T = 25 C I RRM Peak Recovery Current - - A T = 25 C I F = 50A V R = 200V di F /dt = 200A/µs T = 25 C Q rr Reverse Recovery Charge nc T = 25 C T = 25 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units R thc Thermal Resistance, unction to Case 0.35 K/W R thcs Thermal Resistance, Case to Heatsink 0.2 Wt Weight 5.02 g 0.8 (oz) T Mounting Torque N * m 0 20 lbf.in Mounting Surface, Flat, Smooth and Greased 2
3 0 0 Instantaneous Forward Current - I F (A) 0 T = 75 C T = 25 C T = 25 C Reverse Current - I R (µa) unction Capacitance - C T (pf) Reverse Voltage - V R (V) 00 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 0 T = 25 C T = 75 C 25 C 25 C Forward Voltage Drop - V FM (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) 0. D = 0.50 D = 0.20 P D = 0.0 DM D = 0.05 t D = 0.02 Single Pulse D = 0.0 (Thermal Resistance) t 2 Notes:. Duty factor D = t/ t 2 2. Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thc Characteristics 3
4 Allowable Case Temperature ( C) Square wave (D = 0.50) Rated Vr applied DC 60 see note (3) Average Forward Current - IF (AV) (A) Average Power Loss ( Watts ) RMS Limit 50 D = 0.0 D = 0.02 D = 0.05 D = D DC = 0.20 D = 0.50 DC Average Forward Current - IF (AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics trr ( ns ) Vr = 200V Tj = 25 C Tj = 25 C IF = 50A IF = 75A Qrr ( nc ) Vr = 200V Tj = 25 C Tj = 25 C IF = 50A IF = 75A di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery time vs. di F /dt 0 0 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = rated V R 4
5 Reverse Recovery Circuit V R = 200V 0.0 Ω dif/dt F /dt ADUST L = 70µH G D IRFP250 D.U.T. S Fig. 9- Reverse Recovery Parameter Test Circuit 3 0 I F t a trr t b Q rr 4 2 I RRM 0.5 I RRM di(rec)m/dt I RRM di f F /dt. di F /dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM Q rr = t rr x I RRM 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions 5
6 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 50 E B U Current Rating (50 = 50A) 2 - Single Diode 3 - PowIRtab (Ultrafast/ Hyperfast only) 4 - Ultrafast Recovery 5 - Voltage Rating (04 = 400V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 02/06 6
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