Ultrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE
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1 Bulletin PD rev. B /00 HEXFRED TM HF6PB0 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count BSE CTHODE 4 3 CTHODE NODE V R = 00V V F (typ.)* =.3V I F(V) = 6 Q rr (typ.)= 60nC I RRM (typ.) = 5.8 t rr (typ.) = 30ns di (rec)m /dt (typ.)* = 76/µs Description International Rectifier's HF6PB0 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 00 volts and 6 amps continuous current, the HF6PB0 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF6PB0 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-47C (Modified) bsolute Maximum Ratings Parameter Max Units V R Cathode-to-node Voltage 00 V I T C = 5 C Continuous Forward Current I T C = 00 C Continuous Forward Current 6 I FSM Single Pulse Forward Current 90 I FRM Maximum Repetitive Forward Current 64 P T C = 5 C Maximum Power Dissipation 5 W P T C = 00 C Maximum Power Dissipation 60 T Operating unction and T STG Storage Temperature Range -55 to +50 C * 5 C
2 HF6PB0 Bulletin PD-.364 rev. /00 Electrical T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode node Breakdown Voltage 00 V I R = 00µ I F = 6 V FM Max Forward Voltage V I F = 3 See Fig..3.7 I F = 6, T = 5 C I V R = V R Rated See Fig. RM Max Reverse Leakage Current µ T = 5 C, V R = 0.8 x V R Rated D Rated C T unction Capacitance 7 40 pf V R = 00V See Fig. 3 L S Series Inductance 8.0 nh Measured lead to lead 5mm from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 30 I F =.0, /dt = 00/µs, V R = 30V t rr See Fig. 5, ns T = 5 C t rr T = 5 C I F = 6 I RRM Peak Recovery Current T = 5 C I RRM See Fig T = 5 C V R = 00V Q rr Reverse Recovery Charge T = 5 C nc Q rr See Fig T = 5 C /dt = 00/µs di (rec)m/dt Peak Rate of Fall of Recovery Current 0 T = 5 C /µs di (rec)m/dt During t b See Fig T = 5 C Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead! Lead Temperature 300 C R thc Thermal Resistance, unction to Case 0.83 R th" Thermal Resistance, unction to mbient 80 K/W R thcs# Wt Thermal Resistance, Case to Heat Sink Weight g 0.07 (oz) Mounting Torque 6.0 Kg-cm lbf in! in. from Case (.6mm) for 0 sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased
3 HF6PB0 Bulletin PD-.364 rev. /00 Instantaneous Forward Current - I F () 00 0 T = 50 C T = 5 C T = 5 C Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Reverse Current - I R (µ) unction Capacitance -C T (pf) Reverse Current - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T = 50 C T = 5 C T = 5 C T = 5 C Reverse Current - V R (V) Fig. 3 - Typical unction Capacitance vs. Reverse Voltage Thermal Response (Z thc ) 0. D = 0.50 D = 0.0 D = 0.0 D = 0.05 D = 0.0 D = 0.0 Single Pulse (Thermal Resistance) P DM t t Notes:. Duty factor D = t/ t. Peak T = Pdm x ZthC + Tc t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics 3
4 HF6PB0 Bulletin PD-.364 rev. / trr (nc) 0 70 If = 6 If = 8 Irr ( ) V R= 00V T = 5 C T = 5 C If = 6 If = Qrr (nc) 70 V R = 00V T = 5 C T = 5 C / dt (/µs) Fig. 5 - Typical Reverse Recovery vs. /dt, V R= 00V T = 5 C T = 5 C If = 6 If = 8 di (rec) M/dt ( /µs) / dt (/µs) Fig. 6 - Typical Recovery Current vs. /dt, V R= 00V T = 5 C T = 5 C If = 6 If = / dt (/µs) Fig. 7 - Typical Stored Charge vs. /dt, / dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. /dt, 4
5 HF6PB0 Bulletin PD-.364 rev. /00 3 REVERSE RECOVERY CIRCUIT 0 IF ta trr t b V R = 00V 0.0 Ω I RRM Q rr 0.5 I RRM di(rec)m/dt 5 4 L = 70µH 0.75 I RRM D.U.T. /dt dif/dt DUST G D S IRFP50. dif/dt - Rate of change of current through zero crossing. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - rea under curve defined by trr and IRRM trr X IRRM Qrr = 5. di(rec)m/dt - Peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 0 - Reverse Recovery Waveform and Definitions 5
6 HF6PB0 Bulletin PD-.364 rev. /00 Conforms to EDEC Outline TO-47C(Modified) Dimensions in millimeters and inches WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 9045 U.S.. Tel: (30) Fax: (30) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CND: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z. Tel: (905) Fax: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg. Tel: Fax: IR ITLY: Via Liguria 49, 007 Borgaro, Torino. Tel: Fax: IR FR EST: K&H Bldg., F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, apan 7. Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TIWN: 6 Fl. Suite D.07, Sec., Tun Haw South Road, Taipei, 0673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 6
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