Nanoelectronics 08. Atsufumi Hirohata Department of Electronics. Quick Review over the Last Lecture E = 2m 0 a 2 ξ 2.
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1 Nanoelectronics 08 Atsufumi Hirohata Department of Electronics 09:00 Tuesday, 6/February/2018 (P/T 005) Quick Review over the Last Lecture 1D quantum well : E = 2 2m 0 a 2 ξ 2 ( Discrete states ) Quantum tunnelling : ( transmittance ) + ( reflectance ) = 1 j i j t j r 0 a x
2 Contents of Nanoelectonics I. Introduction to Nanoelectronics (01) 01 Micro- or nano-electronics? II. Electromagnetism (02 & 03) 02 Maxwell equations 03 Scholar and vector potentials III. Basics of quantum mechanics (04 ~ 06) 04 History of quantum mechanics 1 05 History of quantum mechanics 2 06 Schrödinger equation IV. Applications of quantum mechanics (07, 10, 11, 13 & 14) 07 Quantum well V. Nanodevices (08, 09, 12, 15 ~ 18) 08 Tunnelling nanodevices 08 Tunnelling Nanodevices Esaki diode Resonant tunnelling Coulomb blockade Single electron transistor
3 Invention of a Transistor First bipolar transistor (transfer resistor) was invented by John Bardeen, William B. Schockley and Walter H. Brattain in 1947 : * ** S. M. Sze, Physics of Semiconductor Devices (John Wiley, New York, 1981). Commercialisation and Integration of Transistors In 1954, Texas Instruments commercialised the first Si transistor : In 1958, Texas Instruments built the first integrated circuit on a Ge bar : *
4 Field Effect Transistor (FET) Metal / oxide / semiconductor (MOS) FET : Miniaturisation of a MOSFET : depletion layer gate length SiO 2 gate gate insulator junction thickness tunnel current p-type Si substrate * ** H. Sakaki and N. Yokoyama, Nanoelectronics (Ohm-sha, Tokyo, 2004). MOSFET *
5 MOSFET Operation * ** Improved MOSFET Structures Double-gate structures : gate gate gate SiO 2 Si Planer double-gate Vertical double-gate Fin double-gate Improved depletion layers : depletion layer depletion layer depletion layer body gate gate gate body embedded SiO 2 Si embedded SiO 2 Si neutral region Si leakage current MOSFET Partially depleted MOSFET Fully depleted MOSFET * H. Sakaki and N. Yokoyama, Nanoelectronics (Ohm-sha, Tokyo, 2004).
6 Advantages of Scaling Dimensions of Latest Transistors
7 Esaki Diode Tunnelling diode was invented by Leo Esaki in 1958 : First observation of tunnelling effect! Microwave oscillator * ** S. M. Sze, Physics of Semiconductor Devices (John Wiley, New York, 1981). *** Resonant Tunnelling Diode (RTD) By forming a quantum well between tunnel barriers, resonant tunnelling is achieved. * **
8 Coulomb Blockade and Co-Tunnelling * ** Single Electron Transistor (SET) *
9 SET Operation * Energy Bands in Semiconductor Nanodevices * K. Goser, P. Glosekotter and J. Diestuhl, Nanoelectronics and Nanosystems (Springer, Berlin, 2003).
10 Energy States in Semiconductor Nanodevices Eigen energy states in semiconductor nanodevices : * H. Sakaki and N. Yokoyama, Nanoelectronics (Ohm-sha, Tokyo, 2004). 4 fundamental nano-device structures : Standing Waves in Nanodevices Ultrathin film (quantum well) Superlattice (multilayer) Quantum wire (nano-wire) Quantum dot (nano-dot) * H. Sakaki and N. Yokoyama, Nanoelectronics (Ohm-sha, Tokyo, 2004).
11 Josephson Junction Superconductor / insulator / superconductor junction : Superconducting quantum interference device (SQUID) : Cooper pairs in both superconductors can be represented by wavefunctions, of which phase difference generates a current across the junction. Quantum phase current sensor * M. Tinkham, Introduction to Superconductivity (McGraw-Hill, New York, 1996); **
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