arxiv:cond-mat/ v2 [cond-mat.mes-hall] 3 Dec 1999

Transcription

1 Double Quantu Dots as Detectors of High-Frequency Quantu Noise in Mesoscopic onductors. arxiv:cond-at/995283v2 [cond-at.es-hall] 3 Dec 1999 Raón Aguado 1,2 and Leo P. Kouwenhoven 1 1-Departent of Applied Physics and DIMES, Delft University of Technology, P.O.Box 546, 26 GA, Delft, The Netherlands. 2-Departent of Physics and Astronoy, Rutgers University, Piscataway, NJ , USA. We propose a easureent set-up for ecting quantu noise over a wide frequency range using inelastic transitions in a tunable two-level syste as a ector. The frequencyresolving ector consists of a double quantu dot which is capacitively coupled to the leads of a nearby esoscopic conductor. The inelastic current through the double quantu dot is calculated in response to equilibriu and non-equilibriu current fluctuations in the nearby conductor, including zeropoint fluctuations at very low teperatures. As a specific exaple, the fluctuations across a quantu point contact are discussed. Two-level systes (TLS) coupled to a dissipative environent are canonical odel systes to study dephasing in quantu echanics [1]. The reversed proble is a TLS that easures the characteristics of a specific environent. The transition rate for levels separated by an energy ǫ, is a easure of the spectral density of the fluctuations in the environent at a frequency f = ǫ/h. Transitions are allowed when energy can be exchanged with the environent. Recently, two device structures were realized that can be used as tunable TLS. In a superconducting single-electron transistor a ooper-pair[2] and in a double quantu dot (DQD) an electron [3] can ake inelastic transitions between two discrete energy states. In this work we calculate the rate for inelastic transitions in a DQD coupled to an environent fored by a second esoscopic device. Sall electronic devices have interesting equilibriu and non-equilibriu noise properties which are nonlinear in frequency [4]. In equilibriu, a transition occurs going fro low-frequencies, where Johnson-Nyquist noise due to theral fluctuations doinates, to high frequencies where quantu noise due to zero-point fluctuations (ZPF) prevails. When the device is voltage biased, non-equilibriu fluctuations can becoe doinant. These lead to shot noise in the current, which has been easured near zero-frequency [5] and at several high frequency values where ZPF becoe doinant. [6] The idea of using a esoscopic device quantu point contact (QP) as an environent for another device quantu dot has successfully been used in the so-called whichpath ector: [7] the dc shot-noise of the QP odifies the transport properties of the dot, leading to dephasing. Here we propose a setup for studying the effect of broadband fluctuations on the inelastic rate in a TLS. This setup provides a frequency-resolved ection over a large frequency range of the fluctuations in esoscopic systes. A wide frequency range requires that the frequency dependent ipedance of the whole circuit is taken into account. Below, we first describe the basic properties of a DQD, then forulate transition probabilities in ters of the noise spectru, followed by calculations where the specific environent is fored by a QP. a) b) DETETOR IRUIT V g Γ Τ Γ g g L R E L ε c c E R Mesoscopic Device DEVIE IRUIT Z s s ev FIG. 1. (a) Energy diagra of a DQD in the regie of high bias voltage. (b) ircuit for capacitively coupling the DQD to a second esoscopic device, e.g. a QP. The ector and device circuits are separately biased by different voltages. The sybols in the ector correspond to the three tunnel barriers in a DQD. A DQD is a fully-controllable TLS. The separation between levels ǫ E L E R, the tunnel rates across the left and right barriers, Γ L, Γ R, and the tunnel coupling between the dots, T c (see Fig.1a), can be tuned separately by eans of gate voltages. If ǫ T c, we can neglect coherence effects due to ixing between E L and E R [8]. Then a non-zero current for ǫ necessarily involves eission (ǫ > ) or absorption (ǫ < ) of quanta to or fro the environent. An applied bias voltage, V, shifts the two Feri levels in the two leads. The Z s V dev

2 higher Feri energy in the left lead allows that for ǫ >, the high energy state, E L, can be occupied by tunneling through the left barrier. An inelastic transition with rate Γ i, followed by tunneling through the right barrier yields an inelastic current, (ǫ) = e (Γ 1 L + Γ 1 i + Γ 1 R ) 1. When the central tunnel barrier is ade the largest, i.e. Γ i << Γ L,Γ R, the inelastic current is governed by tie dependent fluctuations δǫ(t) = eδv(t) and can be calculated fro perturbation theory on T c : [1,9] (ǫ) e Γ i(ǫ) = e T2 cp(ǫ) (1) s ) α 3 c )]. At ω =, it reaches the axiu value Z() 2 = α 2 1/α 2 2Zs 2 κ 2 RK 2 (i.e. Ohic environent). Z(ω) ( ).1.5 =.1 =.5 = P(ǫ) being the the probability for the exchange of energy quanta with the environent: [1 12] P(ǫ) = 1 2π exp[j(t)+i ǫ t]dt (2) All the inforation about the environent is contained in the autocorrelation of the phase operators J(t) [δˆφ(t) δˆφ()]δˆφ(). [13] δˆφ(t) = e tdt δˆv(t ) are the conjugate phases of the voltage fluctuations δˆv(t) (characterized by the spectral density S V (ω)). We are interested in current fluctuations, S I (ω), generated in a nearby esoscopic device. Fig. 1(b) shows an exaple of a circuit that capacitively couples a esoscopic device to a DQD. Both noise spectra are related through: S V (ω) = Z(ω) 2 S I (ω) (Z(ω) being the trans-ipedance connecting ector and device circuits) and then: J(t) = 2π Z(ω) 2 ω 2 S I (ω)(e iωt 1)dω, (3) = h/e kΩ is the quantu resistance. Iportantly, S I (ω) dτeiωτ δî(τ)δî() appears in a non-syetrized for. [14] We shall deonstrate that this is crucial to account correctly for ZPF. Eqs. 1-3 relate the inelastic current through the DQD to the noise spectru of an arbitrary, nearby esoscopic device. [15] Our proble is now reduced to the erination of Z(ω) and S I (ω) for a specific device ebedded in a specific circuit. We consider the circuit in Fig. 1b for coupling the current fluctuations fro the device via the capacitors c into the DQD. The DQD is odelled as three tunnel barriers with capacitances and biased by a voltage V. The gate voltage, V g, controls ǫ. The device is connected to a voltage source, V dev, via leads characterized by the ipedances Z s and the capacitor s. For this circuit we obtain for the trans-ipedance: Z(ω) = α 1 Z s (α 2 [1+iωZ s c 1 (2+iωZ s S) ] α 3iωZ s c ) (4) with α 1 = +g+c, α 2 = (2+g+c)2 2 c and α 3 = 2+ g+ c. Forsallω, Z(ω) 2 ρ[γ/(γ 2 +ω 2 ]with ρ = α 2 1 Z s/[α 2 (α 2 ( c + s ) α 3 c )] and γ = α 2 /[Z s (α 2 ( c f (GHz) FIG. 2. Frequency dependence of Z(ω) for different Ohic resistors in the leads. We have taken typical experiental values for: =.5fF, g = c =.1fF, s = 1nF. In Fig. 2 we plot Z(ω) for different values of Z s and typical experiental values for the eleents in the circuit. For Z s the device is shorted (i.e. Z(ω) ) and the ector is insensitive to the fluctuations. For Z s <.1, the trans-ipedance is approxiately independent of frequency and can be written as Z(ω) 2 Z() 2. In this case, is erined only by the frequency dependence of the noise and therefore easier to interpret. If Z s =.1 is taken, then the coupling of the noise into the ector is sufficiently effective. Provided that J(t) does not diverge for long ties (see below) we expand e J(t) 1+J(t) in Eq. 2 and derive: P(ǫ) {1 2π dω Z(ω) 2 ω 2 S I (ω)}δ(ǫ) + 2π Z(ǫ/) 2 ǫ 2 S I (ǫ/). (5) The first part renoralizes the elastic current (i.e. when ǫ = ), which we do not consider further here. Inserting the last ter in Eq. 1 we obtain the inelastic current through the DQD ector: (ǫ) 4π 2 κ 2T2 c e S I (ǫ/) ǫ 2. (6) We note that current fluctuations at frequency ω result in an inelastic current at level difference ǫ = ω. Below we discuss that this ector current is asyetric in the absorption (ǫ < ) and eission (ǫ > ) sides, which results fro the asyetry in the noise due to ZPF. As an application, we study the current noise spectru ofaqp.therightquantitytobecalculatedforourpurposes is the non-syetrized noise. The syetrized 2

3 version has been calculated in Refs. [16 18]. The tie dependent fluctuations of the current around its average are δî(τ) = Î(τ) Î(τ), the current operator being Î(t) = 2e h α,β dǫ 1dǫ 2 I α,β (ǫ 1,ǫ 2 )â α,ǫ 1 (t)â β,ǫ2 (t) (â α,ǫ (t) [â α,ǫ(t)] is the creation [annihilation] Heisenberg operator of the scattering state ψ α ( r,ǫ), α (a,n) and β (b,) represent suations over leads and nuber of channels and I α,β (ǫ 1,ǫ 2 ) are the atrix eleents of the current with respect to these scattering states). The non-syetrized noise spectru can be written as: S I (ω) dτeiωτ δî(τ)δî() = a,b,n, dǫia,n,b, I b,,a,n f a (ǫ)[1 f b (ǫ+ω)]; f(ǫ) 4e 2 h being the Feri-Dirac function. If the atrix eleents are expressed in ters of energy-independent transission and reflection scattering atrices, we obtain (see [5] for a coplete derivation in the ω = liit): S I (ω) = 4 N D (1 D ){ + (ω ev dev) 1 e β(ω ev dev) }+ 4 (ev dev +ω) 1 e β(ev dev+ω) N D 2 2ω 1 e βω, (7) where N is the nuber of channels, D is the transission probability of the th channel, V dev is the applied voltage and β = 1/k B T. In equilibriu (i.e. V dev = ), we recover the fluctuation-dissipation theore [19] S I (ω) = 2G 2ω, where G = 2 N 1 e βω D is the conductance. Here, our odel reduces to the usual theory for the effects of an electroagnetic environent on single electron tunneling [1 12]. Equation (7) is not syetric (S I (ω) > S I ( ω)) which results fro the difference between eission and absorption due to ZPF. This has to be copared with the syetrized version [16 18] where S I (ω) = S I ( ω). Fro now on we present calculations for zero teperature. Fig. 3a shows the noise, S I (), vs. the noralized frequency = ω ev dev, for N = 2 and different values for D = N D. For > the noise increases linearly with frequency (with a slope erined by D) due to ZPF. For < there are two different cases: for non-open channels the non-equilibriu shot-noise doinates when 1 < <, whereas for < 1 the noise is zero. For open channels (D = 1 and D = 2) the noise is always zero on the absorption side. The inset to Fig. 3a shows the voltage dependence of the noise for different values of ω and D = 1.5 (see also Ref. [6]). When ev dev < ω the noise spectru is flat. Here, the fluctuations are doinated by quantu noise and do not change fro the equilibriu value for sall voltages. For ev dev > ω the noise increases linearly with the voltage and is due to shot noise. This transition fro quantu to shot noise can directly be tested by easuring the ector current at a fixed level separation, ǫ = ω, as a function of the voltage across the QP. In Fig. 3b we plot () for the sae values of the total transission. The ain feature is an asyetric broadening in the eission ( > ) and absorption ( < ) sides. We first consider the absorption side. For open channels (D = 1 and D = 2), the nonequilibriu part of the noise is zero and no energy can be absorbed by the ector. For non-open channels (D = 1.5), the nonequilibriu noise is finite and the ector can absorb energy even at zero teperature; this is reflected as an inelastic current through the DQD for <. Eission is possible for both open and non-open channels due to ZPF so the inelastic current for > is always finite. S I a) S I b) πeV dev /hω 1 1 ABSORPTION Transission 5 EMISSION Transission D=1 D=1.5 D=2 1 1 FIG. 3. (a) S I() (units of 4e2 ev h dev) for different values of D. Inset: S I (units of 2e2 ω) vs. ev dev (units of ω) for π different ω = 1,.5,, fro top to botto. (b) () (units T 2 c of 32π 2 κ 2 e h ev dev ). Insets: transission dependence of for a fixed value of the frequency; =.25 for absorption and =.25 for eission. The transission dependence is shown in the insets to Fig. 3(b). At fixed the absorption oscillates as a functionofd (leftinset)whereastheeissionisanincreasing function with plateau-like features (right inset). To check the observability of these predictions we take as an exaple D = 1.5, =.5, κ = 1 2 and T c = 1µeV. This iplies, e.g. for the absorption side 12pA at ǫ/h = 1.22GHz (ev dev = 1µeV) For ǫ/h = 12.17GHz (ev dev = 1µeV), 1.2pA. These values are well within the resolution liits of present day techniques. [3,2] A log-log plot of vs. (Fig 4) deonstrates the transition fro quantu to shot noise. At = 1 (absorption), a sharp decline of the current arks such a transition. For open channels, the current on the eission side follows a power law behaviour indicating the occurence of an infrared divergence (see below). We now exaine the validity of our previous results. For non-open channels, J(t) behaves for long ties as: 3

4 N J(t ) 8π 2 κ 2 D (1 D ) ev dev t. (8) This linear tie dependence coincides with previous results at equilibriu for an ohic environent at finite teperature [1 12]. Eq. 8 defines two regies: (a) > c with c = 8π 2 κ 2 N D (1 D ), the expansion for J(t) in Eqs. 5-6 is valid. (b) < c, the expansion for J(t) cannot be used. Here, we obtain fro Eq. 8: (ǫ) et2 c η π η 2 +ǫ with η = ev 2 dev c /8 [21]. Our results are within the liits of validity of regie (a) ABSORPTION EMISSION D=1 D=1.5 D= FIG. 4. () vs. (log-log). Sae units as Fig. 3b. Note that for open channels J(t ) λ{ln ev dev t + ξ + i π 2 } where ξ = is Euler s constant and λ = 8πκ 2 G. This behaviour leads to the infrared divergence P(ǫ) ǫ λ 1 caused by the ZPF of the electron-hole pair excitations in the QP. [22] In conclusion, the inelastic current through a DQD at low teperatures can provide a broad-band frequency resolved easureent of the equilibriu and non-equilibriu fluctuations in a nearby esoscopic conductor. The asyetry between absorption and eission processes gives a clear easureent of the nonequilibriu quantu noise. The predicted signal is well within the resolution liits of present day experients on quantu dots [3] as well as on superconducting circuits [2]. In the present case, the easureent by the DQD has a negligible effect on the transport through the QP. If the QP is replaced by a circuit in which superposition of quantu states is iportant (e.g. strongly coupled quantu dots), then our ection setup fors an interesting quantu easureent proble. [23] We acknowledge Yuli Nazarov for fruitful criticis and discussions. We also thank ees Harans, Leonid Glazan, Wilfred van der Wiel, Toshiasa Fujisawa, Tjerk Oosterkap, Michael Janus, Yann Kervennic, Silvano De Franceschi and Leonid Gurevich. Work supported by: the Dutch Organization for Fundaental Research on Mater (FOM), the NEDO joint research progra (NTDP-98), the EU via a TMR network, the NSF grant DMR and the ME of Spain grant PF [1] A. J. Leggett et al, Rev. Mod. Phys. 59, 1 (1987). [2] Y. Nakaura et al, Nature, 398, 786 (1999). [3] T. Fujisawa et al, Science 282, 932 (1998). [4] Sh. Kogan, Electronic noise and fluctuations in solids, abridge University Press [5] M. J. M. de Jong and. W. J. Beenakker in Mesoscopic Electron Transport (Kluwer, The Netherlands) Ed.byL.L. Sohn, L.P. KouwenhovenandG. Schön. [6] R. J. Schoelkopf et al, Phys. Rev. Lett. 78, 337 (1997). [7] E. Bucks et al, Nature 391, 871 (1998). [8] T. H. Oosterkap et al, Nature 395, 873 (1998). [9] L. I. Glazan and K. A. Matveev, Sov. Phys. JETP 67, 1276 (1988). [1] M. H. Devoret et al, Phys. Rev. Lett. 64, 1824 (199). [11] S. M. Girvin et al, Phys. Rev. Lett. 64, 3183 (199). [12] G. L. Ingold and Yu. V. Nazarov in Single-harge Tunneling (Plenu, NY) Ed. by H. Grabert and M. H. Devoret. [13] This is valid for gaussian fluctuations [12] provided the following realistic experiental conditions are et: a) weak coupling between ector and fluctuations and easureents in the linear response regie of the device. As long as tunnelingevents in the DQD weakly excite the environent only the power spectru enters in J(t). b) large level separation: for low frequencies a weakly perturbed environent is no longer well described by a set of haronic oscillators. [14] J(t) depends on the order of the phase operators. In other words, the setup can distinguish between eission (ω > ) and absorption (ω < ), i.e, any noise spectru entering in the easurable inelastic rate should obey S I(ω) > S I( ω). See. W. Gardiner, Quantu Noise, (Springer-Verlag) 1991, hap. 1; for a discussion about syetrization vs. non-syetrization. [15] Our forulation does not include other degrees of freedo of the environent (phonons, for exaple). At very low teperatures, and in the absence of any extra device, (ǫ > ) is finite due to spontaneous eission. [3] (ǫ < ) (absorption side), however, is virtually zero. This akes the absorption region ideal for easuring non-equilibriu fluctuations. The different sources of the noise in the eission side can be separated by studying the dependence on different paraeters of the device. [16] G. B. Lesovik, JETP Lett. 49, 592 (1989). [17] S. E. Yang, Solid State oun. 81, 375 (1992). [18] M. Büttiker, Phys. Rev. B 45, 387 (1992). [19] H. B. allen and T. A. Welton, Phys. Rev. 83, 34 (1951). [2] scales with ev dev at fixed, which can be used to distinguish fro heating effects. [21] These regies have been obtained in a different context by J. Siewert, Y. V. Nazarov and G. Falci, Europhys. 4

5 Lett. 38, 365 (1997). [22] Note the analogy of this case with the x-ray proble. [23] See for exaple: S. A. Gurvitz, quant-ph/