I D Max T A = 25 C (Notes 3 & 5) -6.8A -5.8A. Top View

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Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) 2mΩ @ = 4. 8. 28mΩ @ = 2. 7.2 33mΩ @ = -4. 4mΩ @ = -2.

8 This MOSFET has been designed to minimize the on-state resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

1 Product Line of 2 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max Q1 2 Q2-2 I D Max T = 2 C (Notes 3 & ) = = = -4. = -2. Description and pplications This MOSFET has been designed to minimize the on-state resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor control DC-DC Converters Power management functions Notebook Computers and Printers Features and Benefits Reduced footprint with two discretes in a single SO8 Low gate drive Low input capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2k Lead Free, RoHS Compliant (Note 1) Halogen and ntimony Free. "Green" Device (Note 1) Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94- Moisture Sensitivity: Level 1 per J-STD-2 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-22, Method 28 Weight:.74 grams (approximate) Drain Drain SO-8 S1 G1 D1 D1 Gate Body Diode Gate Body Diode ESD PROTECTED TO 2k Top iew S2 G2 Top iew D2 D2 Gate Protection Diode Source Gate Protection Diode Source Q1 N-Channel Q2 P-Channel Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel -13 C22UD , Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at Marking Information C22UD YY WW = Manufacturer s Marking C22UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 9 = 29) WW = Week (1-3) 1 of 11 February 211

2 Product Line of Maximum = 2 C unless otherwise specified Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source oltage DSS 2-2 Gate-Source oltage S ±1 ±1 (Notes 3 & ) Continuous Drain Current = 4. T = 7 C (Notes 3 & ) I D (Notes 2 & ) (Notes 2 & 6) Pulsed Drain Current = 4. (Notes 4 & ) I DM Continuous Source Current (Body diode) (Notes 3 & ) I S Pulsed Source Current (Body diode) (Notes 4 & ) I SM Thermal = 2 C unless otherwise specified Power Dissipation Linear Derating Factor Thermal Resistance, Junction to mbient Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit (Notes 2 & ) (Notes 2 & 6) P D 1.8 W 14.3 mw/ C (Notes 3 & ) (Notes 2 & ) 1 (Notes 2 & 6) R θj 7 (Notes 3 & ) 8 C/W Thermal Resistance, Junction to Lead (Notes & 7) R θjl 1 Operating and Storage Temperature Range T J, T STG - to + C Notes: 2. For a device surface mounted on 2mm x 2mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 1 sec. 4. Same as note (2), except the device is pulsed with D =.2 and pulse width 3µs.. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 February 211

3 Product Line of Thermal Characteristics I D Drain Current () 1 1 1m 1m R DS(ON) Limited DC 1s Single Pulse T amb = 2 C 1ms One active die 1ms 1ms 1us DS Drain-Source oltage () N-channel Safe Operating rea -I D Drain Current () 1 1 1m 1m R DS(ON) Limited DC 1s 1ms Single Pulse T amb = 2 C One active die 1ms 1ms 1us DS Drain-Source oltage () P-channel Safe Operating rea Thermal Resistance ( C/W) mm x 2 mm 1oz FR4 One active die D=. D=.2 D=.1 1µ 1m 1m 1m k Pulse Width (s) Single Pulse D=. Transient Thermal Impedance Max Power Dissipation (W) mm x 2 mm 1oz FR4 Two active die One active die Temperature ( C) Derating Curve Maximum Power (W) 1 1 Single Pulse T amb = 2 C One active die 2 mm x 2 mm 1oz FR4 1 1µ 1m 1m 1m k Pulse Width (s) Pulse Power Dissipation 3 of 11 February 211

4 Product Line of Electrical Characteristics Q1 = 2 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS Drain-Source Breakdown oltage B DSS =, I D = 2μ Zero Gate oltage Drain Current I DSS μ DS = 2, = Gate-Source Leakage I S - - ±1 μ = ±1, DS = ON CHRCTERISTICS Gate Threshold oltage (th) DS =, I D = 2μ Static Drain-Source On-Resistance (Note 8) R DS (ON) = 4., I D = 7 mω = 2., I D = 3 Forward Transfer dmittance (Notes 8 & 9) Y fs S DS =, I D = 9.4 Diode Forward oltage (Note 8) SD =, I S = 1.3 Continuous Source Current I S DYNMIC CHRCTERISTICS (Note 9) Input Capacitance C iss pf DS = 1, =, Output Capacitance C oss f = 1.MHz Reverse Transfer Capacitance C rss Gate Resistance R g Ω DS =, =, f = 1MHz Total Gate Charge (Note 1) Q g = 2. Total Gate Charge (Note 1) Q g nc DS = 1 Gate-Source Charge (Note 1) Q gs = 4. I D = 9.4 Gate-Drain Charge (Note 1) Q gd Turn-On Delay Time (Note 1) t D(on) Turn-On Rise Time (Note 1) t r = 4., DS = 1, Turn-Off Delay Time (Note 1) t D(off) ns R G = 6Ω, I D = 1 Turn-Off Fall Time (Note 1) t f Notes: 8. Measured under pulsed conditions. Pulse width 3μs; duty cycle 2% 9. For design aid only, not subject to production testing. 1. Switching characteristics are independent of operating junction temperatures. Typical Characteristics Q1 N-CHNNEL I D, DRIN CURRENT () = 3. = 3. = 2. = 4. = 4. = 1 = 2. = DS, DRIN-SOURCE OLTGE () Fig. 1 Typical Output Characteristics I D, DRIN CURRENT () 2 1 = DS T = C T = 12 C T = 8 C T = 2 C T = - C , GTE SOURCE OLTGE () Fig. 2 Typical Transfer Characteristics 4 of 11 February 211

5 R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) = 2. = I D, DRIN-SOURCE CURRENT () Fig. 3 Typical On-Resistance vs. Drain Current and Gate oltage = 4. I D = 1 = 2. I D = T J, JUNCTION TEMPERTURE ( C) Fig. On-Resistance ariation with Temperature 1.6 R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) Product Line of = 4. T = C T = 12 C T = 8 C T = 2 C T = - C 1 2 I D, DRIN CURRENT () Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature = 2. I D = = 4. I D = T J, JUNCTION TEMPERTURE ( C) Fig. 6 On-Resistance ariation with Temperature (TH), GTE THRESHOLD OLTGE () I = 2µ D I = 1m D T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold ariation vs. mbient Temperature I, SOURCE CURRENT () S T = 2 C SD, SOURCE-DRIN OLTGE () Fig. 8 Diode Forward oltage vs. Current of 11 February 211

6 Product Line of C, CPCITNCE (pf) 1, f = 1MHz 1, 1 C iss C oss C rss DS, DRIN-SOURCE OLTGE () Fig. 9 Typical Capacitance I DSS, DRIN-SOURCE LEKGE CURRENT (n) 1, 1, 1, 1 1 T = C T = 12 C T = 8 C T = 2 C DS, DRIN-SOURCE OLTGE () Fig. 1 Typical Drain-Source Leakage Current vs. Drain-Source oltage 1, G TE-SOURCE OLTGE() DS = 1 I D = Q g, T OTL GTE CHRGE (nc) Fig. 11 Gate-Source oltage vs. Total Gate Charge 6 of 11 February 211

7 Product Line of Electrical Characteristics Q2 = 2 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS Drain-Source Breakdown oltage B DSS =, I D = -2μ Zero Gate oltage Drain Current I DSS μ DS = -2, = Gate-Source Leakage I S - - ±1 μ = ±8, DS = ON CHRCTERISTICS (Note 7) Gate Threshold oltage (th) DS =, I D = -2μ Static Drain-Source On-Resistance (Note 11) R DS (ON) = -4., I D = -6 mω 33 4 = -2., I D = -3 Forward Transfer dmittance (Note 11 & 12) Y fs S DS = -, I D = -4 Diode Forward oltage (Note 11) SD =, I S = -1 Continuous Source Current I S DYNMIC CHRCTERISTICS (Note 12) Input Capacitance C iss pf DS = -1, =, Output Capacitance C oss f = 1.MHz Reverse Transfer Capacitance C rss Gate Resistance R g Ω DS =, =, f = 1MHz Total Gate Charge (Note 13) Q g = -2. Total Gate Charge (Note 13) Q g nc DS = -1 Gate-Source Charge (Note 13) Q gs = -4. I D = -4 Gate-Drain Charge (Note 13) Q gd Turn-On Delay Time (Note 13) t D(on) Turn-On Rise Time (Note 13) t r ns = -4., DS = -1, Turn-Off Delay Time (Note 13) t D(off) R G = 6Ω, I D = -1 Turn-Off Fall Time (Note 13) t f Notes: 11. Measured under pulsed conditions. Pulse width 3μs; duty cycle 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. Typical Characteristics Q2 P-CHNNEL -I D, DRIN CURRENT () = -4. = -1 = -4. = -3. = -2. = -3. = -2. = DS, DRIN-SOURCE OLTGE () Fig. 12 Typical Output Characteristics -I D, DRIN CURRENT () 2 1 = - DS T = C T = 12 C T = 8 C T = 2 C T = - C , GTE SOURCE OLTGE () Fig. 13 Typical Transfer Characteristics 7 of 11 February 211

8 R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) R DS(ON), DRIN-SOURCE ON-RESISTNCE (NORMLIZED) = 2. - = I D, DRIN-SOURCE CURRENT () Fig. 14 Typical On-Resistance vs. Drain Current and Gate oltage = 4. -I D = 1 - = 2. -I D = T J, JUNCTION TEMPERTURE ( C) Fig. 16 On-Resistance ariation with Temperature 1.2 R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) Product Line of = 4. T = C T = 12 C T = 8 C T = 2 C T = - C 1 2 -I D, DRIN CURRENT () Fig. Typical Drain-Source On-Resistance vs. Drain Current and Temperature - = 2. -I D = - = 4. -I D = T J, JUNCTION TEMPERTURE ( C) Fig. 17 On-Resistance ariation with Temperature 3 (TH), GTE THRESHOLD OLTGE () I = 2µ D -I = 1m D -I, SOURCE CURRENT () S T = 2 C T, MBIENT TEMPERTURE ( C) Fig. 18 Gate Threshold ariation vs. mbient Temperature , SOURCE-DRIN OLTGE () SD Fig. 19 Diode Forward oltage vs. Current 8 of 11 February 211

9 Product Line of C, CPCITNCE (pf) 1, 1, 1 f = 1MHz C iss C oss C rss DS, DRIN-SOURCE OLTGE () Fig. 2 Typical Capacitance -I DSS, DRIN-SOURCE LEKGE CURRENT (n) 1, 1, 1, 1 1 T = C T = 12 C T = 8 C T = 2 C DS, DRIN-SOURCE OLTGE () Fig. 21 Typical Drain-Source Leakage Current vs. Drain-Source oltage 1 -, G TE-SOURCE OLTGE () DS = -1 I D = Q g, T OTL GTE CHRGE (nc) Fig. 22 Gate-Source oltage vs. Total Gate Charge 9 of 11 February 211

10 Product Line of Package Outline Dimensions h x 4 DIM Inches Millimeters DIM Inches Millimeters Min. Max. Min. Max. Min. Max. Min. Max e. BSC 1.27 BSC b D c H θ 8 8 E h L Suggested Pad Layout of 11 mm inches February 211

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(Notes 6 & 8) Top View

(Notes 6 & 8) Top View NEW PRODUCT 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(ON) Max I D Max () T = +25 C (Notes 6 & 8) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched N