SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor
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1 Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design (See App. Note AN1) Fuy Characterized Avaanche Votage and Current G S TO-220AB Absoute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Votage -150 V Gate-to-Source Votage ± 20 I T C = 25 C Continuous Drain V -27 A I T C = C Continuous Drain V -19 I DM Pused Drain Current c -1 P C = 25 C Maximum Power Dissipation 250 W Linear Derating Factor 1.6 W/ C dv/dt Peak Diode Recovery dv/dt h 8.2 V/ns T J Operating Junction and -55 to C T STG Storage Temperature Range Sodering Temperature, for seconds 300 (1.6mm from case ) bf in (1.1N m) Mounting torque, 6-32 or M3 screw Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 0.61 C/W R θcs Case-to-Sink, Fat, Greased Surface g 0.50 R θja Junction-to-Ambient g 62 Notes through are on page /28/04
2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage -150 V = 0V, I D = -250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = -1mA R DS(on) Static Drain-to-Source On-Resistance mω = -V, I D = -16A f (th) Gate Threshod Votage V V DS =, I D = -250µA I DSS Drain-to-Source Leakage Current -25 µa V DS = -120V, = 0V -250 V DS = -120V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage - na = -20V Gate-to-Source Reverse Leakage = 20V T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V DS = -50V, I D = -16A Q g Tota Gate Charge 71 1 I D = -16A Q gs Gate-to-Source Charge 21 nc V DS = -120V Q gd Gate-to-Drain ("Mier") Charge 32 = -V f t d(on) Turn-On Deay Time 21 V DD = -75V t r Rise Time 70 ns I D = -16A t d(off) Turn-Off Deay Time 35 R G = 3.9Ω t f Fa Time 30 = -V f C iss Input Capacitance 22 = 0V C oss Output Capacitance 370 V DS = -25V C rss Reverse Transfer Capacitance 89 pf ƒ = 1.0MHz C oss Output Capacitance 2220 = 0V, V DS = -1.0V, ƒ = 1.0MHz C oss Output Capacitance 170 = 0V, V DS = -120V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 340 = 0V, V DS = 0V to -120V Avaanche Characteristics Parameter Typ. Max. Units E AS Singe Puse Avaanche Energyd 2 mj I AR Avaanche Currentc -16 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current -27 (Body Diode) A I SM Pused Source Current -1 (Body Diode)c V SD Diode Forward Votage -1.6 V t rr Reverse Recovery Time 150 ns Q rr Reverse Recovery Charge 860 nc MOSFET symbo Conditions showing the integra reverse G S p-n junction diode. T J = 25 C, I S = -16A, = 0V f T J = 25 C, I F = -16A, V DD = -25V di/dt = -A/µs f D 2
3 -I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normaized) -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Votage (V) 1-4.5V 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics T J = 25 C T J = 175 C I D = -27A = -V V DS = 50V 60µs PULSE WIDTH , Gate-to-Source Votage (V) T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance vs. Temperature 3
4 -I SD, Reverse Drain Current (A) -I D, Drain-to-Source Current (A) C, Capacitance(pF) -, Gate-to-Source Votage (V) = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = -16A V DS = 120V V DS = 75V V DS = 30V 8.0 C iss C oss 4.0 C rss V DS, Drain-to-Source Votage (V) Q G Tota Gate Charge (nc) Fig 5. Typica Capacitance vs. Drain-to-Source Votage Fig 6. Typica Gate Charge vs. Gate-to-Source Votage OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 175 C.00 T J = 25 C 1.00 = 0V V SD, Source-to-Drain Votage (V) 1 Tc = 25 C Tj = 175 C Singe Puse µsec 1msec msec 1 0 -V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 -I D, Drain Current (A) 30 V DS R D R G D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature Puse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 D = 0.50 Therma Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri 1E-006 1E t 1, Rectanguar Puse Duration (sec) Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Ambient τ C τ 5
6 E AS, Singe Puse Avaanche Energy (mj) R DS (on), Drain-to-Source On Resistance (mω) R DS(on), Drain-to -Source On Resistance (mω) = -V I D = -27A I D, Drain Current (A) -, Gate -to -Source Votage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Votage Current Reguator Same Type as D.U.T. 50KΩ - Q G 12V.2µF.3µF Q GS Q GD 900-3mA I G D.U.T. I D Current Samping Resistors - + V DS Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V G Charge I D TOP -4.6A -6.3A BOTTOM -16A 400 VDS L 300 I AS R G -20V tp D.U.T IAS 0.01Ω DRIVER V DD A tp V (BR)DSS 15V Starting T J, Junction Temperature ( C) Fig 15a&b. Uncamped Inductive Test circuit Fig 15c. Maximum Avaanche Energy and Waveforms vs. Drain Current 6
7 TO-220AB Package Outine Dimensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 1.40 (.055) 3X 1.15 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 1.6mH, R G = 25Ω, I AS = -17A. ƒ I SD -17A, di/dt -520A/µs, V DD V (BR)DSS, T J 175 C. Puse width 300µs; duty cyce 2%. R q is measured at T J of approximatey 90 C. Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information.06/04 7
8 Note: For the most current drawings pease refer to the IR website at:
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