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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FOD060L, FOD260L 3.3V/5V High Speed-0 MBit/s Logic Gate Optocouplers Features FOD060L in SO8 and FOD260L in 8-pin DIP Very high speed 0 MBit/s Superior CMR 50 kv/µs at,000v peak Fan-out of 8 over -40 C to +85 C Logic gate output Strobable output Wired OR-open collector Safety and regulatory approvals UL577 DIN EN/IEC Applications Ground loop elimination LSTTL to TTL, LSTTL or 5-volt CMOS Package Line receiver, data transmission Data multiplexing Switching power supplies Pulse transformer replacement Computer-peripheral interface Description October 20 These optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate. Devices include a strobable output. This output features an open collector, thereby permitting wired OR outputs. The coupled parameters are guaranteed over the temperature range of -40 C to +85 C. A maximum input signal of 5 ma will provide a minimum output sink current of 3 ma (fan out of 8). An internal noise shield provides superior common mode rejection of typically 50 kv/µs at,000v common mode. N/C + V F _ V CC V E V O 8 8 N/C 4 5 GND Truth Table (Positive Logic) Input Enable Output On H L Off H H On L H Off L H On* NC* L* Off* NC* H* *Devices with pin 7 not connected. A 0. µf bypass capacitor must be connected between pins 5 and 8. (See Note ) FOD060L, FOD260L Rev..0.5

3 Absolute Maximum Ratings (No derating required up to 85 C) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units T STG Storage Temperature -40 to +25 C T OPR Operating Temperature -40 to +85 C EMITTER I F DC/Average Forward Input Current 50 ma V E Enable Input Voltage, not to exceed V CC by more than 500 mv V CC + 0.5V V V R Reverse Input Voltage 5.0 V P I Power Dissipation 45 mw DETECTOR V CC Supply Voltage 7.0 V ( minute max) I O Output Current 50 ma V O Output Voltage 7.0 V P O Collector Output Power Dissipation 85 mw Recommended Operating Conditions Symbol Parameter Min. Max. Units I FL Input Current, Low Level µa I FH Input Current, High Level *6.3 5 ma V CC Supply Voltage, Output V V EL Enable Voltage, Low Level V V EH Enable Voltage, High Level 2.0 V CC V T A Operating Temperature C N Fan Out (TTL load) 8 R L Output Pull-up Resistor 330 4K Ω *6.3 ma is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 ma or less. FOD060L, FOD260L Rev

4 Electrical Characteristics (T A = -40 C to +85 C unless otherwise specified. Typical value is measured at T A = 25 C and V CC = 3.3V) Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER V F Input Forward Voltage I F = 0 ma.4.8 V T A = 25 C.75 B VR Input Reverse Breakdown Voltage I R = 0 µa 5.0 V C IN Input Capacitance V F = 0, f = MHz 6.0 pf VF/ TA Input Diode Temperature Coefficient I F = 0 ma -.9 mv/ C DETECTOR I CCH High Level Supply Current V E = 0.5 V, I F = 0 ma, V CC = 3.3 V ma I CCL Low Level Supply Current V E = 0.5 V, I F = 0 ma, V CC = 3.3 V ma I EL Low Level Enable Current V CC = 3.3 V, V E = 0.5 V -.6 ma I EH High Level Enable Current V CC = 3.3 V, V E = 2.0 V -.6 ma V EH High Level Enable Voltage V CC = 3.3 V, I F = 0 ma V V EL Low Level Enable Voltage V CC = 3.3 V, I F = 0 ma (Note 2) V Switching Characteristics (T A = -40 C to +85 C, V CC = 3.3 V, I F = 7.5 ma unless otherwise specified. Typical value is measured at T A = 25 C and V CC = 3.3V) Symbol AC Characteristics Test Conditions Min. Typ. Max. Unit T PLH Propagation Delay Time R L = 350Ω, C L = 5 pf (Fig. 9) (Note 3) ns to Output High Level T PHL Propagation Delay Time to Output Low Level R L = 350Ω, C L = 5 pf (Fig. 9) (Note 4) ns T PHL T PLH Pulse Width Distortion R L = 350Ω, C L = 5 pf (Fig. 9) ns t PSK Propagation Delay Skew R L = 350Ω, C L = 5 pf (Note 5) 3 40 ns t r Output Rise Time R L = 350Ω, C L = 5 pf (Fig. 9)(Note 6) 22 ns (0-90%) t f Output Fall Time R L = 350Ω, C L = 5 pf (Fig. 2) (Note 7) 3 ns (90-0%) t ELH Enable Propagation Delay Time to Output High Level V EH = 3 V, R L = 350Ω, C L = 5 pf (Fig. 0) (Note 8) 47 ns t EHL CM H CM L Enable Propagation Delay Time to Output Low Level Common Mode Transient Immunity (at Output High Level) Common Mode Transient Immunity (at Output Low Level) V EH = 3 V, R L = 350Ω, C L = 5 pf (Fig. 0) (Note 9) R L = 350Ω, T A =25 C, I F = 0 ma, V OH (Min.) = 2.0V, V CM =,000 V (Fig. ) (Note 0) R L = 350Ω, T A =25 C, I F = 7.5 ma, V OL (Max.) = 0.8 V, V CM =,000 V (Fig. ) (Note ) 27 ns 25,000 50,000 V/µs 25,000 50,000 V/µs FOD060L, FOD260L Rev

5 Transfer Characteristics (T A = -40 C to +85 C Unless otherwise specified. Typical value is measured at T A = 25 C and V CC = 3.3V) Symbol DC Characteristics Test Conditions Min. Typ. Max. Unit I OH High Level Output Current I F = 250 µa, V CC = 3.3 V, V O = 3.3 V, µa V E = 2.0 V (Note 2) V OL Low Level Output Voltage V CC = 3.3 V, I F = 5 ma, I OL = 3 ma, V V E = 2.0 V (Note 2) I FT Input Threshold Current V CC = 3.3 V, V O = 0.6 V, I OL = 3 ma, V E = 2.0 V (Note 2) 5 ma Isolation Characteristics (T A = -40 C to +85 C Unless otherwise specified. Typical value is measured at T A = 25 C and V CC = 3.3V) Symbol Characteristics Test Conditions Min. Typ. Max. Unit I I-O Input-Output Insulation Leakage Current Relative humidity = 45%, T A = 25 C, t = 5 s, V I-O = 3000 VDC (Note 2).0 µa V ISO Withstand Insulation Test Voltage FOD060L FOD260L I IO 2 µa, R H < 50%, T A = 25 C, t = min.(note 2) R I-O Resistance (Input to Output) V I-O = 500 V (Note 2) 0 2 Ω C I-O Capacitance (Input to Output) f = MHz (Note 2) 0.6 pf Notes. The V CC supply to each optoisolator must be bypassed by a 0.µF capacitor or larger. This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package V CC and GND pins of each device. 2. Enable Input No pull up resistor required as the device has an internal pull up resistor. 3. t PLH Propagation delay is measured from the 3.75 ma level on the HIGH to LOW transition of the input current pulse to the.5v level on the LOW to HIGH transition of the output voltage pulse. 4. t PHL Propagation delay is measured from the 3.75 ma level on the LOW to HIGH transition of the input current pulse to the.5v level on the HIGH to LOW transition of the output voltage pulse. 5. t PSK is the worst case difference between t PHL and t PLH for any devices at the stated test conditions. 6. t r Rise time is measured from the 90% to the 0% levels on the LOW to HIGH transition of the output pulse. 7. t f Fall time is measured from the 0% to the 90% levels on the HIGH to LOW transition of the output pulse. 8. t ELH Enable input propagation delay is measured from the.5v level on the HIGH to LOW transition of the input voltage pulse to the.5v level on the LOW to HIGH transition of the output voltage pulse. 9. t EHL Enable input propagation delay is measured from the.5v level on the LOW to HIGH transition of the input voltage pulse to the.5v level on the HIGH to LOW transition of the output voltage pulse. 0. CM H The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e., V OUT > 2.0 V). Measured in volts per microsecond (V/µs).. CM L The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., V OUT < 0.8 V). Measured in volts per microsecond (V/µs). 2. Device considered a two-terminal device: Pins, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. V RMS FOD060L, FOD260L Rev

6 Typical Performance Curves I F - Forward Current (ma) V OL - Low Level Output Voltage (V) Fig. Input Forward Current vs. Forward Voltage T A = 85 C T A = 00 C T A = -40 C T A = 0 C T A = 25 C V F - Forward Voltage (V) Fig. 3 Low Level Output Voltage vs. Ambient Temperature V = 3.3V CC V E = 2V I F = 5mA I O = 3mA T A - Ambient Temperature ( C) I TH - Input Threshold Current (ma) I OH - High Level Output Current (na) Fig. 2 Input Threshold Current vs. Ambient Temperature V CC = 3.3V V O = 0.6V FOD060L R L = 350Ω, kω, 4kΩ FOD260L R L = 350Ω, kω, 4kΩ T A - Ambient Temperature ( C) Fig. 4 High Level Output Current vs. Ambient Temperature V O = V CC = 3.3V V E = 2V I F = 250 µa T A - Ambient Temperature ( C) Fig. 5 Low Level Output Current vs. Ambient Temperature Fig. 6 Propagation Delay vs. Ambient Temperature 40 VCC = 3.3V 80 I OL - Low Level Output Current (ma) V E = 2V V OL = 0.6V I F = 5mA t P - Propagation Delay (ns) V = 3.3V CC I F = 7.5mA R L = 350Ω t PLH - FOD060L t PLH - FOD260L t PHL - FOD060L t PHL - FOD260L T A - Ambient Temperature ( C) T A - Ambient Temperature ( C) FOD060L, FOD260L Rev

7 Typical Performance Curves t r, t f, - Rise, Fall Time (ns) Fig. 7 Rise and Fall Times vs. Ambient Temperature V CC = 3.3V I F = 7.5mA RL = 350Ω t r t f T A - Ambient Temperature ( C) PWD - Pulse Width Distortion (ns) Fig. 8 Pulse Width Distortion vs. Ambient Temperature V CC = 3.3V I F = 7.5mA RL = 350Ω FOD260L FOD060L T A - Ambient Temperature ( C) FOD060L, FOD260L Rev

8 Pulse Gen. t f = t r = 5 ns Z O = 50 Ω Input Monitor (I F ) 47Ω Pulse Generator tr = 5ns Z O= 50Ω 7.5 ma V CC GND 0.µF Bypass Input Monitor (V E) 0.µF bypass +3.3V R L C L Output (V O) Input (I F) t PHL Output (V O) Output (V ) O Fig. 9 Test Circuit and Waveforms for t PLH, t PHL, t r and t f. V CC GND +3.3V R L Output (V O ) C L tf Input (V ) E tehl Output (V O) 90% 0% t PLH tr I F = 7.5 ma I = 3.75 ma F.5 V telh 3.0 V.5 V.5 V Fig. 0 Test Circuit t EHL and t ELH. FOD060L, FOD260L Rev

9 VCM 0V Peak 3.3V VO V FF B A I F V CC GND V CM Pulse Gen Switching Pos. (A), I = 0 F V O (Min) V O (Max) µf bypass 350Ω +3.3V Output (V O) CM H VO 0.5 V Switching Pos. (B), I = 7.5 ma F CM L Fig. Test Circuit Common Mode Transient Immunity FOD060L, FOD260L Rev

10 Ordering Information Part Number Package Packing Method FOD060L Small outline 8-pin Tube (50 units per tube) FOD060LR2 Small outline 8-pin Tape and Reel (2.500 units per reel) FOD260L DIP 8-Pin Tube (50 units per tube) FOD260LS SMT 8-Pin (Lead Bend) Tube (50 units per tube) FOD260LSD SMT 8-Pin (Lead Bend) Tape and Reel (,000 units per reel) FOD260LV DIP 8-Pin, DIN EN/IEC option Tube (50 units per tube) FOD260LSV SMT 8-Pin (Lead Bend), DIN EN/IEC option Tube (50 units per tube) FOD260LSDV SMT 8-Pin (Lead Bend), DIN EN/IEC option Tape and Reel (,000 units per reel) FOD260LTV DIP 8-Pin, 0.4 Lead Spacing, DIN EN/IEC option Tube (50 units per tube) FOD260LTSV SMT 8-Pin, 0.4 Lead Spacing, DIN EN/IEC option Tube (50 units per tube) FOD260LTSR2 SMT 8-Pin, 0.4 Lead Spacing Tape and Reel (700 units per reel) FOD260LTSR2V SMT 8-Pin, 0.4 Lead Spacing, DIN EN/IEC option Tape and Reel (700 units per reel) Marking Information Small Outline Definitions 060L X YY S 3 4 Fairchild logo 2 Device number 3 One digit year code, e.g., 8 4 Two digit work week ranging from 0 to 53 5 Assembly package code 2 5 FOD060L, FOD260L Rev

11 Marking Information (Continued) DIP and SMT Definitions Fairchild logo 2 Device number V XX 260L YY VDE mark (Note: Only appears on parts ordered with DIN EN/IEC option See order entry table) 4 Two digit year code, e.g., 5 Two digit work week ranging from 0 to 53 6 Assembly package code B 2 6 FOD060L, FOD260L Rev

12 Carrier Tape Specification Small Outline 3.50 ± ± MAX Note: All dimensions are in millimeters. User Direction of Feed 4.0 ± MAX 6.40 ± ± ± 0.05 Ø.5 MIN.75 ± ± ± ± 0.20 Ø.5 ± 0./-0 FOD060L, FOD260L Rev..0.5

13 Carrier Tape Specification (Continued) Option S D 0 P 0 P2 t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width 6.0 ± 0.3 t Tape Thickness 0.30 ± 0.05 P 0 Sprocket Hole Pitch 4.0 ± 0. D 0 Sprocket Hole Diameter.55 ± 0.05 E Sprocket Hole Location.75 ± 0.0 F Pocket Location 7.5 ± 0. P ± 0. P Pocket Pitch 2.0 ± 0. A 0 Pocket Dimensions 0.30 ±0.20 B ±0.20 K ±0.20 W Cover Tape Width 3.2 ± 0.2 d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 FOD060L, FOD260L Rev

14 Carrier Tape Specification (Continued) Option TS D 0 P 0 P2 t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width 24.0 ± 0.3 t Tape Thickness 0.40 ± 0. P 0 Sprocket Hole Pitch 4.0 ± 0. D 0 Sprocket Hole Diameter.55 ± 0.05 E Sprocket Hole Location.75 ± 0.0 F Pocket Location.5 ± 0. P ± 0. P Pocket Pitch 6.0 ± 0. A 0 Pocket Dimensions 2.80 ± 0. B ± 0. K ±0. W Cover Tape Width 2.0 ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 FOD060L, FOD260L Rev

15 Reflow Profile Small Outline Temperature ( C) C/Sec Ramp up rate 33 Sec Time (s) 260 C Time above 83 C = 90 Sec >245 C = 42 Sec 360 FOD060L, FOD260L Rev

16 Reflow Profile (Continued) DIP and SMT Temperature ( C) TP TL Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 50 C Temperature Max. (Tsmax) 200 C Time (t S ) from (Tsmin to Tsmax) Ramp-up Rate (t L to t P ) Tsmax Preheat Area Tsmin seconds 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) Peak Body Package Temperature Time (t P ) within 5 C of 260 C Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S 20 ts Time 25 C to Peak Time (seconds) tl seconds 260 C +0 C / 5 C 30 seconds tp Ramp-down Rate (T P to T L ) Time 25 C to Peak Temperature 6 C/second max. 8 minutes max. FOD060L, FOD260L Rev

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20 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

21 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FOD060L FOD060LR2

FOD060L, FOD260L 3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

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