Cypress Semiconductor Package Qualification Report
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1 Cypress Semiconductor ackage Qualification Report QT # VERSION 1.0 March, lead SOIC ackage using NITTO M-8500 Mold Compound and Ni/d re-lated Leadframe, MSL1, 235 C Cypress hilippines (CSI-R) CYRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Al Laxman Reliability Director Quality Engineering (408) (408)
2 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 2 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) Qual Report ACKAGE QUALIFICATION HISTORY Description of Qualification urpose NITTO M-8500 Molding Compound and Ni/d re-plated Leadframe for 24-lead (300mil) SOIC package with 89 x 126mil die size, MSL 1 (No Cypress hilippines (CSI-R) Date Comp May Upgrade to 235 C Mar 02
3 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 3 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) MAJOR ACKAGE INFORMATION USED IN THIS QUALIFICATION ackage Designation: S24312 ackage Outline, Type, or Name: 24-lead lastic Small Outline IC (SOIC) Mold Compound Name/Manufacturer: NITTO M-8500 Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper with Ni/d F Lead Finish, Composition / Thickness: Copper lated with Ni/d and Gold Flash Die Backside reparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: QMI Die Attach Material: QMI 509 Die Attach Method: Silver Epoxy - Snap Cure Bond Diagram Designation Wire Bond Method: Thermosonic Wire Material/Size: Gold, 1.0mil Thermal Resistance Theta JA C/W: 68 C/W ackage Cross Section Yes/No: N/A Assembly rocess Flow: Name/Location of Assembly (prime) facility: Cypress hilippines (CSI-R) ELECTRICAL TEST / FINISH DESCRITION Test Location: Cypress hilippines (CSI-R) Fault Coverage: 100% Note: lease contact a Cypress Representative for other packages availability.
4 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 4 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) RELIABILITY TESTS ERFORMEDER SECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate 1) QT # Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max =5.5V, 150 C 1) QT # Dynamic Operating Condition, Vcc Max=5.5V, 150 C Result /F Temperature Cycle 1) QT #015108, QT # MIL-STD-883C, Method 1010, Condition C, -65 C to 150 C recondition: JESD22 Moisture Sensitivity Level Hrs., 85 C/85%RH+3IR-Reflow, 235 C+5, -0 C High Accelerated Saturation Test 1) QT #015108, QT # C, 3.63V, 85%RH recondition: JESD22 Moisture Sensitivity Level Hrs., 85 C/85%RH+3IR-Reflow, 235 C+5, -0 C ressure Cooker 1) QT #015108, QT # Cypress Spec recondition: JESD22 Moisture Sensitivity Level Hrs., 85 C/85%RH+3IR-Reflow, 235 C+5, -0 C External Visual 1) QT Cypress Spec High Temperature Storage 1) QT C ± 5 C, No bias Solderability 1) QT Cypress Spec Adhesion of Lead Finish 1) QT Cypress Spec X-Ray 1) QT Acoustic Microscopy Test (C-SAM) Cypress Spec ) QT Cypress Spec
5 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 5 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF 3 Failure Rate 4 High Temperature Operating Life Early Failure Rate High Temperature Operating Life 2,3 Long Term Failure Rate N/A N/A 0 M 62,000 DHRs FIT 1 Assuming an ambient temperature of 55 C and a junction temperature rise of 15 C. 2 Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation AF = exp E k A 1 T T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 ev/kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 4 EFR and LFR Failure Rate based on QT #
6 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 6 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ACOUSTIC - MICROSCOE, MSL1 CY7C63613-SC (7C63613C) M CSI-R COM 15 0 CY7C63613-SC (7C63613C) M CSI-R COM 15 0 CY7C63613-SC (7C63613C) CSI-R COM 15 0 HI-ACCEL SATURATION TEST. 130C, 5.5V, 85%RH, RE COND 168 HR 85C/85%RH, MSL 1 CY7C63613-SC (7C63613C) M CSI-R RESSURE COOKER TEST, 121C, 100%RH, RE COND 168 HR 85C/85%RH CY7C63613-SC (7C63613C) M CSI-R TC COND. C -65C TO 150C, RECONDITION 168 HRS 85C/85%RH, MSL1 CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) M CSI-R CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R
7 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 7 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ACOUSTIC-MSL1 CY7C63613-SC (7C63613C) CSI-R COM 15 0 CY7C63613-SC (7C63613C) CSI-R COM 15 0 CY7C63613-SC (7C63613C) CSI-R COM 15 0 HIGH TEM DYNAMIC OERATING LIFE-EARLY FAILURE RATE, (150C, 5.5V, Vcc Max CY7C63613-SC (7C63613C) CSI-R 48H HIGH TEM DYNAMIC OERATING LIFE-LATENT FAILURE RATE, 150C, 5.5V, Vcc Max CY7C63613-SC (7C63613C) CSI-R HI-ACCEL SATURATION TEST (130C, 3.63V, 85%RH), RE COND 168 HR 85C/85%RH, MSL 1 CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R RESSURE COOKER TEST, 121C, 100%RH, RE COND 168 HR 85C/85%RH, MSL1 CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R HIGH TEM STORGAGE, LASTIC, 150C CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R EXTERNAL VISUAL CY7C63613-SC (7C63613C) CSI-R COM 15 0 CY7C63613-SC (7C63613C) CSI-R COM 15 0
8 Cypress Semiconductor QT # V, 1.0 ackage: lastic Small outline ICs (SOIC) age 8 of 8 Molding Compound: NITTO M-8500 March, 2001 Assembly: Cypress hilippines (CSI-R) Reliability Test Data QT #: Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism SODERABILITY CY7C63613-SC (7C63613C) CSI-R COM 3 0 CY7C63613-SC (7C63613C) CSI-R COM 3 0 ADHESION OF LEAD FINISH CY7C63613-SC (7C63613C) CSI-R COM 3 0 CY7C63613-SC (7C63613C) CSI-R COM 3 0 X-RAY CY7C63613-SC (7C63613C) CSI-R COM 15 0 CY7C63613-SC (7C63613C) CSI-R COM 15 0 TC COND. C -65C TO 150C, RECONDITION 168 HRS 85C/85%RH, MSL1 CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R CY7C63613-SC (7C63613C) CSI-R
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