POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR

Transcription

1 Registration No.98 JAXA-QTS-23/A Superseding JAXA-QTS-23/ Cancelled POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR 448, 449, 45 45, 452, , 455, , 425, 426 Prepared and Established by Fuji Electric Device Technology Co., Ltd. Issued by Japan Aerospace Exploration Agency

2 This specification was originally written and established in the Japanese language. This specification has been translated into English for international users. Note that this document is a working document for international users. Any discrepancies found in this document should be verified against the latest Japanese document before any significant decisions are made.

3 Page i Rev. Date Description ---- A 2 December Feb. 28 Original Revision Log Added the family type part number Added Part No.: 424, 425 and 426 (V DS 3V Class Revised to reflect the changes made to JAXA-QTS-23C. Revised screening test in compliance with JAXA-QTS-23C. Revised qualification test and quality conformance inspection in compliance with JAXA-QTS-23C.

4 Page ii Contents GENERAL.... Part Number....2 Absolute Maximum Ratings Primary Electrical Characteristics Radiation Hardness APPLICABLE DOCUMENTS REQUIREMENTS Design and Construction Package Configuration and Lead Connection Lead Materials and Finish Electrical Characteristics Marking Certification QUALITY ASSURANCE PROVISIONS General Requirements Materials Control Manufacturing Process Control In-process Inspection Screening Electrical Characteristics to be Measured Test Conditions Delta Limits Qualification Test and Quality Conformance Inspection Electrostatic Discharge Sensitivity Test Radiation Hardness Test Change of Tests and Inspections Long-term Storage... 5 PREPARATION FOR DELIVERY... 6 NOTES Terms and Definitions Notice for Acquisition Officers Handling Instructions Beryllium Warning...

5 Page POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR 448, 449, 45 45, 452, , 455, , 425, 426 GENERAL This specification establishes the detailed requirements for space use, high reliability, N channel power MOSFET (, 3, 2 and 25V for TO-254 types used for electronic equipment installed on spacecrafts. The products specified in this specification are as follows.. Part Number The part numbers for the products covered by this specification are as follows: JAXA ( R (2 448 JAXA ( R (2 449 JAXA ( R (2 45 JAXA ( R (2 45 JAXA ( R (2 452 JAXA ( R (2 453 JAXA ( R (2 454 JAXA ( R (2 455 JAXA ( R (2 456 JAXA ( R (2 424 JAXA ( R (2 425 JAXA ( R (2 426 Notes ( "JAXA" indicates that the parts are for space applications. (2 "R" indicates that the parts are radiation hardened for space applications.

6 Page 2.2 Absolute Maximum Ratings The absolute maximum ratings of the products specified in this specification are as follows. Unless otherwise specified, T A is +25 C. Part No. V DS (V (A (pulse (A V GS (V T C =25 o C (W T A =25 o C (W h ( ( o C T stg ( o C R th(ch-c ( o C/W R th(ch-a ( o C/W Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig.22 ±2 5 to Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig Fig.37 SOA Fig Fig.39 Note( The channel temperature h is given by the following equations: Fig.4 h =T C + R th(ch-c x h =T A + R th(ch-a x Where T C : Case temperature ( C T A : Ambient temperature ( C R th(ch-c : Thermal resistance between junction and case ( C/W R th(ch-a : Thermal resistance between channel and ambient ( C/W : Power dissipation (W

7 Page 3.3 Primary Electrical Characteristics The primary electrical characteristics of the products specified in this specification are as follows. Unless otherwise specified, T A is +25 C. Part No. V (BRDSS (V =ma V GS =V Electrical Characteristics (/3 SS (μa V DS =8% of rated V DS V GS =V I GSS (na V GS =±2V V DS =V V GS(th (V =ma V DS =V GS R DS(on ( (mω =5% of rated V GS =2V gfs( (S =5% of rated V DS =25V E AS (mj Rated V DD =48V, V GS =2V Min Max Max Min-Max Max Min Max ± Note( Pulse test: Pulse width ms, Duty cycle 2%

8 Page 4 Electrical Characteristics (2/3 Part No Q GS (nc Q GD (nc Q G (nc t d(on (ns t r (ns t d(off (ns t f (ns V DS =5% of rated V DS, = rated, V GS =2V V DD =5% of rated V DS, = rated, V GS =2V, R G =Ω Max Max Max Max Max Max Max

9 Page 5 Electrical Characteristics (3/3 (Body Diode Characteristics Part No V SD ( (V I F = rated V GS =V t rr (ns Q rr (C I F = rated, V GS =V, -di/dt=a/s, h =25 o C Max Typ Typ Note( Pulse test: Pulse width ms, Duty cycle 2%

10 Page 6.4 Radiation Hardness The radiation hardness of the products specified in this specification is as follows. Symbol R Radiation hardness assurance level Gy(Si { 5 rad(si} (Dose Rate 36Gy(Si/ h to 36Gy(Si/ h 2 APPLICABLE DOCUMENTS The latest issues of documents listed below at the time of contract award or application form a part of this specification the extent specified herein. JAXA-QTS-23 Semiconductor Devices, High Reliability, Space Use, General Specification for MIL-STD-75 Test Methods Standard for Semiconductor Devices

11 Page 7 3 REQUIREMENTS 3. Design and Construction The design and construction of the products shall meet the requirements specified in this paragraph and paragraph 3.3 of JAXA-QTS Package Configuration and Lead Connection The package configuration and lead connection shall meet the requirements specified in Figure Lead Materials and Finish The leads shall be made of Fe-Ni (Ni-Au plating covered OCF (Oxygen-Free Copper and plated with Au as specified in the paragraph c or with Pb-Sn solder immersion as specified in paragraph c 2 2. of JAXA-QTS-23. In the case of Pb-Sn solder immersion, unplated lead length shall be less than 2mm from the lead egress on the product s body Electrical Characteristics The electrical characteristics shall meet the requirements specified in Tables a and b. 3.2 Marking Marking shall be in accordance with the paragraph 3.4 of JAXA-QTS-23, and Figure Certification Manufacturers who wish to supply the products specified herein shall be certified by JAXA as specified in paragraph 3. of JAXA-QTS QUALITY ASSURANCE PROVISIONS 4. General Requirements The general requirements shall be in accordance with the paragraph 4. of JAXA-QTS Materials Control The materials control shall be in accordance with the paragraph 4.2 of JAXA-QTS Manufacturing Process Control The manufacturing process control shall be in accordance with the paragraph 4.3 of JAXA-QTS In-process Inspection The in-process inspection shall be in accordance with the paragraph 4.5 of JAXA-QTS-23.

12 Page Screening The screening shall be in accordance with paragraph 4.7 of JAXA-QTS-23. The electrical characteristics to be measured, test conditions and delta limits shall be as follows Electrical Characteristics to be Measured The following parameters shall be measured during the interim and final electrical characteristics tests for screening. ( Interim electrical characteristic tests T A =+25 o C Measuring item MIL-STD-75 Test Method No. Test conditions V (BRDSS (V SS (μa I GSS (na V GS(th (V R DS(on ( (mω gfs( (S Bias Condition C =ma V GS =V Bias Condition C V DS =8% of rated V DS V GS =V Bias Condition C V GS =±2V V DS =V =ma V DS =V GS =5% of rated V GS =2V =5% of rated V DS =25V V SD ( (V I F = rated V GS =V Min Max Max Min-Max Max Min Max ± Note( Pulse test: Pulse width ms, Duty cycle 2% (2 Final electrical characteristics test: As specified in the subgroups, 2 and 3 of Tables a and b.

13 Page Test Conditions The conditions of gate stress test, avalanche energy test, temperature cycling test, reverse bias burn-in test and burn-in test for screening test shall be as follows. (Gate stress test is performed as part of In-process inspection. Gate stress test: V GS =35V, t=ms, T A =25 o C Single pulse avalanche energy (E AS test: (pulse = rated, V DD =48V, V GS =2V 5 Initial T C = + 25 o + C 2E AS BVDSS VDD L(mH = 2 Equation ( (ID BVDSS Temperature cycling test: Condition G, 2 cycles Reverse bias burn-in test (GS: T A =5 C, V GS =6V V DS =V, 48hr Burn-in test (DS: T A =5 C, V DS =8% of rated V DS V GS =V, 24hr Delta Limits The delta limits for reverse bias burn-in test and burn-in test shall be as follows. ΔI GSS 2nA ΔSS μa ΔR DS(on 2% ΔV GS(th 2% 4.6 Qualification Test and Quality Conformance Inspection The qualification test and the quality conformance inspection shall be in accordance with paragraphs 4.6 and 4.8 of JAXA-QTS-23. External dimensions, electrical characteristics, test conditions and limits shall be as specified in Figure, and Tables, 2, 3, and 4. Group C tests and Group D tests may be exempted when the qualification test or quality conformance inspection for the Groups C and D tests was performed and the device passed the test within a year. Detailed requirements are specified in Table 6. Group E tests may be exempted in spite of chip size, when the semiconductor devices manufactured from the die of the same wafer lot have passed the Group E tests in the qualification test or the quality conformance inspection Electrostatic Discharge Sensitivity Test Electrostatic discharge sensitivity test in the qualification test shall be performed with the following lead combination: Gate and Source

14 Page Radiation Hardness Test Radiation test (TID: Total Dose Irradiation level, electrical characteristics, test conditions and limits in the qualification tests and the quality conformance inspections shall be as specified in Table 5. The bias shall be maintained during the irradiation and post-irradiation electrical characteristics test. The post-irradiation electrical characteristics test shall be performed within 24 hours after the completion of irradiation. 4.7 Change of Tests and Inspections No change has been made to any test or inspection specified in appendixes A, B or C of JAXA-QTS Long-term Storage Delivery of the products stored at the manufacturer s site for 24 months or longer shall be in accordance with paragraph 4.9. of JAXA-QTS PREPARATION FOR DELIVERY Preparation for delivery shall be in accordance with Section 5 of JAXA-QTS NOTES 6. Terms and Definitions The terms and definitions used herein shall be in accordance with paragraph.2 of JAXA-QTS-23 and as follows. ( SEB (Single Event Burnout; Burnout of the device caused by the incidence of a proton or a heavy ion, when the device is applied to an off-state voltage between drain and source. (2 SEGR (Single Event Gate Rupture; Breakdown of MOSFET Gate Oxide film caused by the incidence of a proton or a heavy ion, when the device is applied to a gate bias voltage between gate and source. 6.2 Notice for Acquisition Officers The precautions to be taken by the purchaser shall be in accordance with paragraph 6.2 of JAXA-QTS-23 and as follows Handling Instructions The products specified in this specification contain thin oxide films and can be damaged due to electrostatic discharge (ESD. ESD protection measures shall be implemented to avoid ESD between the gate and source and between the gate and drain during transportation and other handling environments.

15 Page Beryllium Warning The products of TO-254 package contain beryllium. Disintegration or chemical processing of the products that may produce dusts or fumes shall be prohibited. Disposition of the products shall be performed in accordance with applicable regulations.

16 Page 2 Table -a. Group A Inspection ( Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method A - Static Characteristics Sample (T A =25 C Size LTPD 3 -a Breakdown Voltage 347 Conditions Bias Condition C Drain to Source =ma, V GS =V V DSS min min min min Limits V DC 3V DC 2V DC 25V DC -b Gate Current 34 Conditions Bias Condition C I GSS V GS =±2V, V DS =V max Limits ±na DC -c Drain Current 343 Conditions Bias Condition C Bias Condition C Bias Condition C Bias Condition C SS V DS =8V, V GS =V V DS =4V, V GS =V V DS =6V, V GS =V V DS =2V, V GS =V Limits μa DC -d Gate to Source 344 Conditions Bias Condition C Voltage (Threshold V GS =V DS, =ma V GS(th Limits max V DC -e Static Drain to Source 342 Conditions Pulse Test( 2, V GS =2V On-State Resistance R DS(on 2A 2A 7.5A 2A 7.5A 7.5A 2A 6.5A 7A 2A 3.5A 6A max [mω] max [mω] max [mω] max [mω] Limits f Forward 3475 Conditions Pulse Test( 2, V GS =25V Transconductance gfs 2A 2A 7.5A 2A 7.5A 7.5A 2A 6.5A 7A 2A 3.5A 6A min min min min Limits 8S 8S 4S 8S 8S 4S 8S 8S 4S 8S 8S 4S -g Forward Voltage --- Conditions Pulse Test( 2, V GS =V V SD 42A 42A 5A 42A 35A 5A 42A 33A 4A 42A 27A 2A max Limits.6V A -2 Static Characteristics Sample (T A =25 C Size LTPD 5-2a Gate Current 34 Conditions Bias Condition C I GSS V GS =±2V, V DS =V (25 C max Limits ±na DC -2b Drain Current 343 Conditions Bias Condition C Bias Condition C Bias Condition C Bias Condition C ISS V DS =8V, V GS =V V DS =4V, V GS =V V DS =6V, V GS =V V DS =2V, V GS =V (25 C max Limits 25μA DC -2c Gate to Source 344 Conditions Bias Condition C Voltage (Threshold V GS =V DS, =ma V GS(th min (25 C Limits.5V DC -2d Static Drain to Source 342 Conditions Pulse Test( 2, V GS =2V On-State Resistance R DS(on 2A 2A 7.5A 2A 7.5A 7.5A 2A 6.5A 7A 2A 3.5A 6A (25 C max [mω] max [mω] max [mω] max [mω] Limits Notes( The same sample may be used for all subgroups. ( 2 Pulse test: Pulse width ms, Duty cycle 2%

17 Page 3 Table -b. Group A Inspection ( Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method A -3 Static Characteristics Sample (T A =-55 C Size LTPD 5-3a Gate to Source 344 Conditions Bias Condition C Voltage (Threshold V GS =V DS, =ma V GS(th max (-55 C Limits 5.V DC -3b Forward 3475 Conditions Pulse Test ( 2, V GS =25V Transconductance gfs 2A 2A 7.5A 2A 7.5A 7.5A 2A 6.5A 7A 2A 3.5A 6A (-55 C min min min min Limits 8.5S 8.5S 4.5S 8.5S 8.5S 4.5S 8.5S 8.5S 4.5S 8.5S 8.5S 4.5S A -4 Dynamic Characteristics Sample (T A =25 C Size LTPD 3 Switching Time Test 3472 Conditions V DD =5V V DD =65V V DD =V V DD =25V ( Turn-on delay time: V GS =2V, R g =Ω V GS =2V, R g =Ω V GS =2V, R g =Ω V GS =2V, R g =Ω t d(on Rise time: t r 42A 42A 5A 42A 35A 5A 42A 33A 4A 42A 27A 2A (2 Turn-off delay time: Limits max max max max t d(off t d(on 65ns 4ns 3ns 65ns 4ns 3ns 65ns 4ns 3ns 65ns 4ns 3ns Fall time: t f t r 3ns 2ns 2ns 3ns 2ns 2ns 3ns 2ns 2ns 3ns 2ns 2ns t d(off 9ns ns 65ns 9ns ns 65ns 9ns ns 65ns 9ns ns 65ns t f 65ns 3ns 5ns 65ns 3ns 5ns 35ns 2ns 5ns 3ns 5ns ns A -6a Safe Operating Area Sample Test( 3 Size LTPD Conditions b End-Point Electrical --- Same as Gr.A- A -7 Other Characteristics Sample (T A =25 C ( 4 Size LTPD -7a Gate Charge 347 V GS =2V V GS =2V V GS =2V V GS =2V ( Gate Charge: Q g Conditions V DS =5V V DS =65V V DS =V V DS =25V (2 Gate to Drain Charge: Q gd 42A 42A 5A 42A 35A 5A 42A 33A 4A 42A 27A 2A (3 Gate to Source Limits max max max max Charge: Q gs Q g 22nC nc 5nC 22nC nc 5nC 22nC nc 5nC 22nC nc 5nC Q gd 7nC 3nC nc 7nC 3nC nc 7nC 3nC nc 7nC 3nC nc Q gs 6nC 3nC 3nC 6nC 3nC 3nC 6nC 3nC 3nC 6nC 3nC 3nC -7b Reverse Recovery 3473 Conditions IF = I F = I F = I F = Characteristics 42A 42A 5A 42A 35A 5A 42A 33A 4A 42A 27A 2A ( T rr V GS =V (2 Q rr -di/dt=a/μs Notes( The same sample may be used for all subgroups. ( 2 Pulse test: Pulse width ms, Duty cycle 2% Limits max max max max T rr 765ns 75ns 525ns 765ns 75ns 525ns 5ns2ns 95ns 5ns 35ns 95ns Q rr.5μc.μc 5.5μC 3.μC 2.μC 6.5μC 2.μC 8.μC 9.μC 29.μC 8.μC.μC ( 3 The samples used for subgroups A-, A-2, and A-3 tests shall be used. ( 4 The samples used for subgroups A-6 tests shall be used.

18 Page 4 Table 2-a. Group B Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method B - Dimensions( Sample Level I ( 2 3p Size Level II ( 2 3p 266 Conditions See Fig. B -2 Resistance to Sample Level I 3p Solvents( 3 ( 4 Size Level II 3p 22 Conditions Solvent a, b, c B -3b Temperature Cycling Sample Level I 6p (Air to Air Size Level II 6p 5 Conditions C C C cycles -3c Surge Test 466 Conditions ( Gate Shock V GS =35V (2 Avalanche 466 V DS =48V, L= See paragraph 4.5.2, Equation (, R g =Ω Conditions (pulse 42A 42A 5A 42A 35A 5A 42A 33A 4A 42A 27A 2A -3d Hermetic Seal 7 Conditions ( Fine Condition H max Limits -3 Pa-cm 3 /s (2 Gross 7 Conditions --- Condition C -3e End-Point Electrical --- Conditions Same as Gr.A- -3f Decap-Internal 275 Conditions Visual g Bond Strength 237 Conditions Condition A Limits Gate Wire >9gf Source Wire >3gf >3gf >9gf >3gf >3gf >9gf >3gf >3gf >9gf >3gf >3gf >9gf -3h SEM( 277 Conditions i Die Shear Sample Level I 3p Size Level II 3p 27 Conditions --- Limits min 2.5kgf B -4 Solderability( 3 ( 4 Sample Level I 6 leads( 5 Size Level II 6 leads( Conditions --- Notes( The test may be performed using the samples prior to inspection lot formation. ( 2 Level I and Level II shall be applicable to the qualification test or the quality conformance inspection, respectively. (See paragraphs C.3.2 and C.3.3 of JAXA-QTS-23 ( 3 Electrically defective products from the same inspection lot may be used. ( 4 When electrically defective products are used, the samples shall be exposed to the same thermal environments as the certified samples experience in all thermal tests required as part of the screening test. ( 5 This test shall be performed for each 3 lead from 2 devices.

19 Page 5 Table 2-b. Group B Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method B -5a Intermittent Sample Level I LTPD Operation Life Size Level II 2p 42 Conditions Condition D, 2 cycles( -5b End-Point Electrical --- Same as Gr.A- B -6c Accelerated Sample Level I LTPD Steady-state Size Level II 2p Gate Stress (High 42 Conditions V GS =2V, T A =5 C, 48hr Temp. GS or V GS =2V, T A =75 C, 24hr -6d End-Point Electrical --- Same as Gr.A- -6e Accelerated 42 Conditions V DS =V V DS =3V V DS =2V V DS =25V Steady-state T A =5 C, 24hr Reverse Bias (DS or T A =75 C, 2hr -6f End-Point Electrical --- Conditions Same as Gr.A- -6g Bond Strength Sample 2 wires Size 237 Conditions Condition A Limits Gate Wire >9gf Source Wire >3gf >3gf >9gf >3gf >3gf >9gf >3gf >3gf >9gf >3gf >3gf >9gf B -7 Thermal Resistance Sample Level I LTPD R th(ch-c (ΔV SD Size Level II 8p 36 Conditions TA =25 C max ( C/W max ( C/W max ( C/W max ( C/W Limits Note( If the samples are also used for Intermittent operating life test of C- in the Group C test, the test shall be performed up to 6 cycles.

20 Page 6 Table 3. Group C Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method C -a Intermittent Sample Level I LTPD Operation Life Size Level II LTPD 42 Conditions Condition D, 6 cycles ( -b End-Point Electrical --- Conditions Same as Gr.A- C -2a Steady-state Bias Sample Level I LTPD 5 Life test (high Size Level II NA temperature 42 Conditions V GS =6V GS applied ( 2 T A =5 C, hr -2b End-Point Electrical --- Conditions Same as Gr.A- -2c Steady-state Bias 42 Conditions V DS =8V V DS =4V V DS =6V V DS =2V Life test (high temperature DS applied ( 2 T A =5 C, hr -2d End-Point Electrical --- Conditions Same as Gr.A- C -2a Thermal Shock Sample Level I 2p Temperature Cycling Size Level II NA 5 Conditions C C C cycles -2b Hermetic Seal 7 Conditions Condition H ( Fine max Limits -3 Pa-cm 3 /s (2 Gross 7 Conditions Condition C -2c End-Point Electrical --- Conditions Same as Gr.A- ( 3 C -3 Thermal Resistance Sample Level I LTPD ( 4 Size Level II 8p R th(ch-c (ΔV SD 36 Conditions T A =25 C max ( C/W max ( C/W max ( C/W max ( C/W Limits C -4a Safe Operating Sample Level I LTPD Area Test( 5 Size Level II LTPD 3474 Conditions b End-Point Electrical --- Conditions Same as Gr.A- ( 5 C -6a Electric Discharge Sample Level I 3p Sensitivity Size Level II NA Classification 2 Conditions V GS ±275V ±V ±5V ±275V ±V ±5V ±275V ±V ±5V ±275V ±V ±5V V DS =V -6b End-Point Electrical --- Conditions Same as Gr.A- Notes( For the quality conformance inspection, the cycles may be reduced to 2 cycles as a minimum. ( 2 The legibility of the marking shall not apply. ( 3 This test may be conducted prior to the hermetic seal. ( 4 Thermal impedance curve shall be obtained during the qualification test. ( 5 This test may be exempted if performed in the Group A test.

21 Page 7 Table 4-a. Group D Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method D -a Thermal Shock Sample Level I LTPD 5 (Glass Strain Size Level II LTPD 5 56 Conditions Condition B, 5 cycles -b Thermal Shock 5 Conditions C C C (Temperature Cycling 45 cycles -c Terminal Strength 236 Conditions Condition A.5kg, 3s -d Moisture Resistance 2 Conditions (MIL-STD-22, Method 6 -e Hermetic Seal 7 Conditions Condition H ( Fine (2 Gross 7 Conditions max Limits -3 Pa-cm 3 /s Condition C -f Visual Inspection 5 Conditions g End-Point Electrical --- Conditions Same as Gr.A- D -2a Shock( Sample Level I LTPD 5 Size Level II LTPD 5 26 Conditions No Operating, 47m/s 2 (5G 5 blows in each orientation, X, Y, Y 2 and Z -2b Vibration, Variable 256 Conditions to 2 Hz, 4min Frequency( 96. m/s 2 (2G -2c Constant 26 Conditions m/s 2 (G Acceleration( X, Y, Y 2 and Z orientation -2d Hermetic Seal( 7 Conditions Condition H ( Fine (2 Gross 7 Conditions max Limits -3 Pa-cm 3 /s Condition C -2e End-Point Electrical --- Conditions Same as Gr.A- ( D -3a Salt Atmosphere( 2 Sample Level I LTPD 5 Size Level II LTPD 5 4 Conditions 35 C, 24hr Rate of salt deposit= to 5g/m 2 /24hr Notes( Samples used for subgroup may be used. ( 2 Electrically defective products from the same inspection lot may be used.

22 Page 8 Table 4-b. Group D Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method D -4 Barometric Pressure Sample Level I 3p (reduced Size Level II NA Conditions 8mmHg Not applicable for devices with rated voltage 2V. D -5 Internal Water Vapor Sample Level I 3p ( Size Level II 3p 8 Conditions --- 6sec (minimum V DS =25V, V GS =V D -6a Resistance to Sample Level I 3p Soldering Heat Size Level II NA 23 Conditions 25 C, s -6b Visual Inspection --- Conditions c Hermetic Seal 7 Conditions Condition H ( Fine (2 Gross 7 Conditions max Limits -3 Pa-cm 3 /s Condition C -6d End-Point Electrical --- Conditions Same as Gr.A- Note( Electrically defective products from the same inspection lot may be used.

23 Page 9 Table 5. Group E Inspection Gr.No MIL-STD-75 V Class 3V Class 2V Class 25V Class Sub Test Item Method E -a Total Dose Sample Level I 4p( Irradiation Size Level II 4p( (TID 9 Conditions Total Dose 3 Gy(Si Dose Rate 36Gy(Si/h to 36Gy(Si/h Bias Condition (during irradiation, after irradiation (a V DS =V, V GS =2V (b V DS =V, V GS =-2V (c V DS =8V, (c V DS =4V, (c V DS =6V, (c V DS =2V, V GS =V V GS =V V GS =V V GS =V -b End-Point Electrical Within 24hr after irradiation ( Breakdown Voltage 347 Conditions Bias Condition C Drain to Source =ma, V GS =V V DSS min min min min Limits V DC 3V DC 2V DC 25V DC (2 Gate Current 34 Conditions Bias Condition C I GSS V GS =±2V, V DS =V Limits max ±na DC (3 Drain Current 343 Conditions Bias Condition C Bias Condition C Bias Condition C Bias Condition C SS V DS =8V, V GS =V V DS =4V, V GS =V V DS =6V, V GS =V V DS =2V, V GS =V Limits max μa DC (4 Gate to Source 344 Conditions Bias Condition C Voltage (Threshold V GS =V DS, =ma V GS(th min.5v DC Limits ΔV GS(th max 2.V (5 Static Drain to Source 342 Conditions Pulse Test( 2, V GS =2V On-State Resistance R DS(on 2A 2A 7.5A 2A 7.5A 7.5A 2A 6.5A 7A 2A 3.5A 6A max [mω] max [mω] max [mω] max [mω] Limits Notes( This test shall be performed for each single wafer lot. When an inspection lot consists of multiple inspection sublots, one inspection sublot may be performed this test. ( 2 Pulse test: Pulse width ms, Duty cycle 2%

24 Page 2 Table 6. Exemption of Quality Conformance Inspection When the qualification test or the quality conformance inspection for products specified as following table was initiated within a year from the completion date of the screening test for the inspection lot, and the device passed the test or inspection, the corresponding tests may be exempted. Gr.No V Class 3V Class 2V Class 25V Class Sub JAXA-QTS-23 Appendix C Die Size Die Size Die Size Die Size Test Item / /2 /4 / /2 /4 / /2 /4 / /2 /4 C -a Intermittent Operation Life -b End-Point Electrical These tests may be exempted when the following two conditions are satisfied. When the devices having the same die size or larger die size passed. -2a Temperature Cycling When the devices passed using the value of V DS defined in paragraph.2 or -2b Hermetic Seal larger value of the V DS. -2c End-Point Electrical -3 Thermal Resistance This test may be exempted when the device passed in the Group B-7 test. -4a Safe Operating Area Test -4b End-Point Electrical This test may be exempted when the device passed in the Group A-6 test. D -a Thermal Shock (Glass Strain -b Thermal Shock (Temperature Cycling -c Terminal Strength -d Moisture Resistance -e Hermetic Seal -f Visual Inspection This test may be exempted when any one of the products passed in the Group D- -g End-Point Electrical test. -2a Shock -2b Vibration, Variable Frequency -2c Constant Acceleration -2d Hermetic Seal -2e End-Point Electrical -3a This test may be exempted when any one of the products passed in the Group D-3 Salt Atmosphere test. This test may be -4 Barometric Pressure -5 Internal Water Vapor This test shall not be performed in the quality conformance inspection. exempted when the device having same package passed in this test. This test may be exempted when any one of the products passed in the Group D-5 test.

25 Page 2 Note: All leads are isolated from the case. Figure. Package Configuration and Lead Connection of TO-254 type package

26 Page 22 BeO is used Figure 2. Marking

27 Page 23 V DD=5% of rated V DS R L V DS V GS=2V R G=Ω 9% % V GS t d(on t r t d(off t f V DS 9% 9% % % Figure 3. Switching time test circuit and waveforms Z Y 2 X 2 D S G X Y Z 2 Figure 4. Orientation

28 448 Page Fig. 5 =f( Fig. 6 T a =f(t a Operation in this area Limited by R DS(on 5 [A] PW=ms =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS PW=5ms PW=ms Fig. 7 Fig =f( Operation in this area Limited by R DS(on 3 2 [A] T a =f(t a =25 T j =5 Single Pulse Fig. 9 Fig.. V DS [V] Maximum Safe Operating Area =f(v DS PW=ms PW=5ms PW=ms

29 45 Page =f( Fig. Fig T a =f(t a Operation in this area Limited by R DS(on 3 2 [A] PW=ms PW=5ms PW=ms =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS Fig. 3 Fig =f( Operation in this area Limited by R DS(on 3 2 [A] T a =f(t a Fig. 5 Fig. 6 PW=ms T PW=5ms c =25 PW=ms T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS

30 452 Page Fig. 7 =f( Fig. 8 T a =f(t a Operation in this area Limited by R DS(on [A] PW=ms PW=5ms PW=ms. =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS Fig. 9 Fig =f( Operation in this area Limited by R DS(on 3 2 [A] T a =f(t a =25 T j =5 Single Pulse Fig. 2 Fig. 22. V DS [V] Maximum Safe Operating Area =f(v DS PW=ms PW=5ms PW=ms

31 Page =f( Fig. 23 Fig T a =f(t a Operation in this area Limited by R DS(on 2 5 [A] PW=ms =25 T PW=5ms j =5 PW=ms Single Pulse. V DS [V] Fig. 25 Fig. 26 Maximum Safe Operating Area =f(v DS =f( Operation in this area Limited by R DS(on 3 2 [A] T a =f(t a. =25 T j =5 Single Pulse Fig. 27 Fig. 28. V DS [V] Maximum Safe Operating Area =f(v DS PW=ms PW=5ms PW=ms

32 456 Page =f( Fig. 29 Fig T a =f(t a Operation in this area Limited by R DS(on 3 2 [A] PW=ms =25 PW=5ms T j =5 PW=ms Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS Fig. 3 Fig =f( Operation in this area Limited by R DS(on T a =f(t a Fig. 33 Fig. 34 [A] =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS PW=ms PW=5ms PW=ms

33 Page =f( Fig. 35 Fig T a =f(t a Operation in this area Limited by R DS(on [A] 5 =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS PW=ms PW=5ms PW=ms Fig. 37 Fig =f( Operation in this area Limited by R DS(on [A] PW=ms PW=5ms PW=ms T a =f(t a Fig. 39 Fig. 4 =25 T j =5 Single Pulse. V DS [V] Maximum Safe Operating Area =f(v DS