DESIGN/PROCESS CHANGE NOTIFICATION
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- Annabel Sanders
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1 PCN# : P519AAB Issue Date : Jul. 20, 2015 DESIGN/PROCESS CHANGE NOTIFICATION This is to inform you that a change is being made to the products listed below. Unless otherwise indicated in the details of this notification, the identified change will have no impact on product quality, reliability, electrical, visual or mechanical performance and affected products will remain fully compliant to all published specifications. Products incorporating this change may be shipped interchangeably with existing unchanged products. This change is planned to take effect in 90 calendar days from the date of this notification. Please work with your local Fairchild Sales Representative to manage your inventory of unchanged product if your evaluation of this change will require more than 90 calendar days. Please contact your local Customer Quality Engineer within 30 days of receipt of this notification if you require any additional data or samples. Alternatively, you may send an request for data, samples or other information to PCNSupport@fairchildsemi.com. Implementation of change: Expected First Shipment Date for Changed Product : Oct. 18, 2015 Expected First Date Code of Changed Product :1541 Description of Change (From) : Package SOT23 Assembly site: Subcontractor assembly manufacturing site in China, Fairchild In-house Manufacturing site in Cebu, Philippines Description of Change (To) : Package SOT23 Assembly Site: Subcontractor assembly manufacturing sites in China, Fairchild In-house Manufacturing site in Cebu, Philippines Reason for Change: - To increase its manufacturing capacity - To meet additional demand for SOT-23 products by having additional flexibility in manufacturing locations. 1 of 3
2 These changes will have no impact on product quality, reliability, electrical, visual or mechanical performance and affected products will be fully compliant to all published data sheet specifications. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. Affected Product(s): Please refer to the list of affected products in the addendum attached in the PCN you received. This list is based on an analysis of your company s procurement history. 2 of 3
3 Qualification Plan Device Package Process No. of Lots Q MMBTA92 SOT23-3L Bipolar 1 Test Description: Condition: Standard: Duration: Results: MSL(1), PKG(Small), 5 Cycles, 24 PeakTemp(260c), Cycles(3) NA JESD22-A113 hrs (Precondition) 0/231 units High Temperature Reverse Bias 150C, 80% rated BV JESD22-A hrs 0/77 units Highly Accelerated Stress Test 110C, 85%RH, 80% rated BV,MAX=42V JESD22-A hrs 0/77 units Power Cycle Delta 100CC, 2 Min cycle MIL-STD cycles 0/77 units Temperature Cycle -55C, 150C JESD22-A Cycles 0/77 units Qualification Plan Device Package Process No. of Lots Q BAT54S SOT23-3L Schottky Diode 1 Test Description: Condition: Standard: Duration: Results: MSL(1), PKG(Small), 5 Cycles, 24 PeakTemp(260c), Cycles(3) NA JESD22-A113 hrs (Precondition) 0/231 units High Temperature Reverse Bias 150C, 80% rated BV JESD22-A hrs 0/77 units Highly Accelerated Stress Test 110C, 85%RH, 80% rated BV,MAX=42V JESD22-A hrs 0/77 units Power Cycle Delta 100CC, 2 Min cycle MIL-STD cycles 0/77 units Temperature Cycle -55C, 150C JESD22-A Cycles 0/77 units Qualification Plan Device Package Process No. of Lots Q MMBD1404A SOT23-3L Switching Diode 1 Test Description: Condition: Standard: Duration: Results: MSL(1), PKG(Small), 5 Cycles, 24 PeakTemp(260c), Cycles(3) NA JESD22-A113 hrs (Precondition) 0/231 units High Temperature Reverse Bias 150C, 80% rated BV JESD22-A hrs 0/77 units Highly Accelerated Stress Test 110C, 85%RH, 80% rated BV,MAX=42V JESD22-A hrs 0/77 units Power Cycle Delta 100CC, 2 Min cycle MIL-STD cycles 0/77 units Temperature Cycle -55C, 150C JESD22-A Cycles 0/77 units 3 of 3
4 Title : Qualification Report for PCN : P519AAB Date : Jul. 20, 2015 Affected devices : Customer Name : FUTURE/BELPOWER/BCM Customer Code : BAV74 Y N Customer Name : FUTURE/BELPOWER Customer Code : BAT54 Y N BAT54A Y N BAT54C Y N BAV74 Y N MMBZ5231B Y N MMBZ5232B Y N MMBZ5237B Y N MMBZ5239B Y N MMBZ5255B Y N MMBZ5257B Y N Customer Name : FUTURE/EFORE Customer Code : BAS31 Y N MMBT100 Y N Customer Name : FUTURE/ENICS Customer Code : BAR43C Y N Customer Name : FUTURE-BOSTON, MA Customer Code : BAR43 Y N BAR43C Y N BAR43S Y N BAS21 BAS21LT Y N BAS31 BAS31; BAS31LT1 Y N BAT54 BAT54 Y N BAT54A Y N BAV23S Y N BAV70 Y N Page 1 of 9
5 BAV99 Y N BAW56 Y N BAW74 Y N BSR14 Y N BZX84C10 Y N BZX84C12 Y N BZX84C15 Y N BZX84C18 Y N BZX84C3V3 Y N BZX84C3V9 Y N BZX84C4V3 Y N BZX84C4V7 Y N BZX84C5V1 Y N BZX84C5V6 Y N BZX84C6V2 Y N BZX84C7V5 Y N BZX84C8V2 Y N BZX84C9V1 Y N FLLD261 Y N MMBD1201 MMBD1201 Y N MMBD1401A Y N MMBD1403 Y N MMBD1403A Y N MMBD1404 Y N MMBD1404A Y N MMBD1405 Y N MMBD1501A Y N MMBD1505A Y N MMBD2838 Y N MMBD4148CA Y N MMBD4148CC Y N MMBD4148SE Y N MMBD4448 Y N MMBD7000 Y N MMBD914 Y N MMBT100 Y N MMBT2369A Y N MMBT2484 Y N MMBT2907 Y N MMBT5088 Y N MMBT5089 MMBT5089 T/R Y N MMBT5179 Y N MMBT C Y N MMBT5550 Y N MMBT5551 Y N MMBT6427 MMBT6427 Y N MMBT6428 Y N MMBTA06 MMBTA06 T/R Y N MMBTA13 Y N MMBTA A Y N Page 2 of 9
6 MMBTA42 Y N MMBTA55 Y N MMBTA92 Y N MMBTH10 Y N MMBZ5226B Y N MMBZ5230B Y N MMBZ5231B Y N MMBZ5232B Y N MMBZ5235B MMBZ5235BT1 Y N MMBZ5236B Y N MMBZ5239B Y N MMBZ5240B Y N MMBZ5242B Y N MMBZ5245B Y N MMBZ5252B Y N MMBZ5255B Y N MMBZ5256B Y N Customer Name : FUTURE-PACKAGE A/C Customer Code : BAR43 Y N BAS16 BAS16LT1 Y N BAS21 Y N BAT54 Y N BAT54A Y N BAT54C Y N BAT54S Y N BAV23S Y N BAV70 Y N BAV99 Y N BCV27 Y N MMBD1201 Y N MMBD1203 Y N MMBD1204 Y N MMBD1205 Y N MMBD1503A Y N MMBD1505A Y N MMBD4148 Y N MMBD4148CC Y N MMBD4148SE Y N MMBD914 Y N MMBT3906 Y N MMBT5551 Y N MMBT6427 Y N MMBTA06 Y N MMBTA42 Y N MMBTA56 Y N Page 3 of 9
7 Customer Name : FUTURE Customer Code : BSR18A Y N BZX84C10 Y N BZX84C12 Y N BZX84C18 Y N BZX84C22 Y N BZX84C3V3 Y N BZX84C3V9 Y N BZX84C6V8 Y N BZX84C8V2 Y N MMBD1205 Y N MMBD4148CA Y N MMBT2369A Y N MMBT5551 Y N MMBZ5227B Y N MMBZ5231B Y N MMBZ5235B Y N MMBZ5240B Y N MMBZ5245B Y N Customer Name : FUTURE Customer Code : BAW74 Y N BCW66G Y N BZX84C12 Y N MMBT2369 Y N MMBZ5245B Y N Customer Name : FUTURE Customer Code : BAR43 Y N BAR43S Y N BAS19 Y N BAT54C Y N BAT54S Y N BAV74 Y N BAV99 Y N BAW56 Y N BAW74 Y N BCV27 Y N BCW66G Y N BSR16 Y N BSR18A Y N BZX84C11 Y N BZX84C12 Y N BZX84C15 Y N BZX84C16 Y N BZX84C20 Y N Page 4 of 9
8 BZX84C22 Y N BZX84C27 Y N BZX84C3V3 Y N BZX84C3V9 Y N BZX84C6V2 Y N BZX84C6V8 Y N BZX84C8V2 Y N FLLD261 Y N MMBD1201 Y N MMBD1203 Y N MMBD1205 Y N MMBD1403 Y N MMBD1403A Y N MMBD1501A Y N MMBD1505A Y N MMBD4148 Y N MMBD4148CA Y N MMBD4148SE Y N MMBT100 Y N MMBT2369A Y N MMBT2484 Y N MMBT3906 Y N MMBT5088 Y N MMBT5089 Y N MMBT5401 Y N MMBT5550 Y N MMBT5551 Y N MMBTA14 Y N MMBTA56 Y N MMBTA92 Y N MMBTH10 Y N MMBZ5226B Y N MMBZ5228B Y N MMBZ5231B Y N MMBZ5232B Y N MMBZ5234B Y N MMBZ5236B Y N MMBZ5242B Y N MMBZ5243B Y N MMBZ5245B Y N MMBZ5252B Y N Page 5 of 9
9 Customer Name : FUTURE UKG \ USD Customer Code : BAR43 Y N BAR43C Y N BAS16 Y N BAS19 Y N BAS21 Y N BAS29 Y N BAS35 Y N BAT54 Y N BAT54A Y N BAT54C Y N BAV23S Y N BAV70 Y N BAV74 Y N BAV99 Y N BAW56 Y N BCV26 Y N BSR14 Y N BSR16 Y N BSR18A Y N BZX84C10 Y N BZX84C12 Y N BZX84C15 Y N BZX84C18 Y N BZX84C20 Y N BZX84C3V3 Y N BZX84C3V9 Y N BZX84C4V3 Y N BZX84C4V7 Y N BZX84C5V1 Y N BZX84C5V6 Y N BZX84C6V2 Y N BZX84C7V5 Y N BZX84C8V2 Y N BZX84C9V1 Y N FLLD261 Y N MMBD1201 Y N MMBD1203 Y N MMBD1204 Y N MMBD1403 Y N MMBD1404A Y N MMBD1405 Y N MMBD1501A Y N MMBD1505A Y N MMBD4148 Y N MMBD4148CA Y N MMBD4148CC Y N MMBD4148SE Y N MMBD914 Y N Page 6 of 9
10 MMBT100 Y N MMBT2369A Y N MMBT2907 Y N MMBT5401 Y N MMBT5551 Y N MMBTA06 Y N MMBTA13 Y N MMBTA14 Y N MMBTA42 Y N MMBTA56 Y N MMBTA92 Y N MMBZ5231B Y N MMBZ5234B Y N Customer Name : FUTURE SACC \ HAYES Customer Code : BAR43C Y N BAR43S Y N BAS31 Y N BAT54 Y N BAT54A Y N BAT54C Y N BAT54S Y N BAV23S Y N BAV70 Y N BCV26 Y N BCV27 Y N BSR14 Y N BSR16 Y N BSR18A Y N MMBD1201 Y N MMBD1203 Y N MMBD1204 Y N MMBD1205 Y N MMBD1503A Y N MMBD4148 Y N MMBD4148CC Y N MMBD4148SE Y N MMBT3906 Y N MMBT5401 Y N MMBTA42 Y N Customer Name : FUTURE/HONEYWELL Customer Code : BAS21 Y N BAT54A Y N BAV70 Y N BAV99 Y N Page 7 of 9
11 BCV27 Y N MMBD1204 Y N MMBD1205 Y N MMBD1501A Y N MMBD1505A Y N MMBD4148SE Y N MMBT100 Y N MMBT3906 Y N Customer Name : FUTURE/MURATA Customer Code : BAV23S Y N Customer Name : FUTURE/VTECH Customer Code : BAR43C Y N Qualification Test Summary : Page 8 of 9
12 The selection methodology of qualification vehicles is aligned with JESD47 and if automotive devices are impacted by the PCN the selection of qualification vehicles is also align with the requirements in AEC-Q100 or AEC-Q101 Please contact your local Customer Quality Engineer if you have any questions concerning this data. Page 9 of 9
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NO.: I6051-FA5A99 VERSION: D PAGE: 1 RELIABILITY REPORT WAU88XX/ NAU8401XX/ NAU8501XX/ NAU8820XX SERIES FUNCTION : Stereo Audio CODEC PROCESS : TSMC 0.18um ENGINEER : HYLi MANAGER : Cwang Publication Release
*Contents in this sheet are subject to change without prior notice.
MULTILAYER CERAMIC CAPACITORS Automotive Capacitor Arrays Series (MY) Qualified to 4 x 0402, 4 x 0603 Sizes NP0 & X7R Dielectrics Halogen Free & RoHS Compliance *Contents in this sheet are subject to change
74HC30-Q100; 74HCT30-Q100
Rev. 1 30 January 2013 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an. Inputs include clamp diodes. This enables the use of current limiting resistors
TRM Professional Multianode
Tantalum Ultra Low Capacitor FEATURES Improved reliability 0.5%/1khrs (twice better than standard) reduced by 25% to 0.0075 CV Robust against higher thermo-mechanical stresses during assembly process Multi-anode
2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)
Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)
Quad bus transceiver; 3-state. The output enable inputs (OEA and OEB) can be used to isolate the buses.
Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance
Final Product/Process Change Notification Document # : FPCN21387X Issue Date: 21 July 2016
Title of Change: Qualification of Lead Frame raw material change used in the ON Semiconductor from C50710 to C19400 of SSOP16, SSOP20, TSSOP20 (225mil) and SSOP24, SSOP30, TSSOP30, TSSOP36 (275mil). Proposed
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance
Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.
Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features
Package Lead Code Identification SINGLE 3 SERIES 3 UNCONNECTED PAIR RING QUAD
Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Surface Mount SOT-2/SOT- 4 Package Low Turn-On Voltage (As Low as 4 V at ma) Low FIT (Failure in Time) Rate* Six-sigma
74HC153; 74HCT General description. 2. Features and benefits. Dual 4-input multiplexer
Rev. 5 23 January 2014 Product data sheet 1. General description The is a dual 4-input multiplexer. The device features independent enable inputs (ne) and common data select inputs (S0 and S1). For each
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
74HC03-Q100; 74HCT03-Q100
Rev. 1 4 July 2013 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad 2-input NND gate with open-drain outputs. Inputs include clamp diodes that enable
DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PBSS5350D 50 V low V CEsat PNP transistor Supersedes data of 2001 Jul 13 2001 Nov 13 FEATURES Low collector-emitter saturation voltage High current capability
BUK A. N-channel TrenchMOS logic level FET
Rev. 2 1 June 21 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This
DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 PBSS4540Z 40 V low V CEsat NPN transistor Supersedes data of 2001 Jul 24 2001 Nov 14 FEATURES Low collector-emitter saturation voltage High current capabilities
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
74AVC16374-Q General description. 2. Features and benefits. 16-bit edge triggered D-type flip-flop; 3.6 V tolerant; 3-state
Rev. 2 16 March 2015 Product data sheet 1. General description The is a 16-bit edge triggered flip-flop featuring separate D-type inputs for each flip-flop and 3-state outputs for bus-oriented applications.
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability
The 74LV08 provides a quad 2-input AND function.
Quad 2-input ND gate Rev. 03 6 pril 2009 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC0
74LVC1G125-Q100. Bus buffer/line driver; 3-state
Rev. 2 8 December 2016 Product data sheet 1. General description The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE).
150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor
Rev. 0 November 2009 Product data sheet. Product profile. General description NPN high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted
DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 Supersedes data of 1997 Jun 2 22 May 22 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line
N-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance
PCN #: JAON-09NEAW672 CCB No MICREL Products - Packing Pre and Post Changes
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PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.
M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology
BUK A. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 29 January 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS
DATA SHEET Anti-Sulphur Thick Film Chip Resistor SAS(A/B) Series
DATA SHEET Anti-Sulphur Thick Film Chip Resistor SAS(A/B) Series 0.5% TO 5.0%, TCR -200 TO +400 SIZE: 0201/0402/0603/0805/1206/1210/2010/2512 RoHs Compliant May 08, 2017 V.4 Page: 2 of 1. SCOPE 1.1 This
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D09 Supersedes data of 2004 Aug 5 2004 Oct 25 FEATURES High h FE and low V CEsat at high current operation High collector current capability: I C maximum
PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors
Rev. 2 6 July 29 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
The 74LVC1G02 provides the single 2-input NOR function.
Rev. 07 18 July 2007 Product data sheet 1. General description 2. Features The provides the single 2-input NOR function. Input can be driven from either 3.3 V or 5 V devices. These features allow the use
TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
M3D88 Rev. 2 2 November 21 Product data 1. Description in a plastic package using TrenchMOS 1 technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level
DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 NPN/PNP general purpose transistor Supersedes data of 2002 Aug 09 2002 Nov 22 FEATURES High current (500 ma) 600 mw total power dissipation Replaces
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic