Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
|
|
- Claud Douglas
- 6 years ago
- Views:
Transcription
1 Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels Evan Wilson, Daniel Valencia, Mark J. W. Rodwell, Gerhard Klimeck and Michael Povolotskyi Electrical and Computer Engineering
2 Motivation As the size of devices decreases, the fraction of channel atoms in contact with gate oxide atoms increases Significant fraction of device atoms see oxide even for single gate, trend will be steeper for double gate, gate-all-around Evan Wilson ITRS projected gate length results for single-gate SOI
3 Motivation Traditional Network for Gate Computational Oxide Nanotechnology Gate (NCN) Dimensions, k, H-pass Model: Hard wall boundaries/wkb approximation in thin oxides +z Source Channel Drain E Semi. Channel Surface passivation with implicit oxide, dielectric constant, dimensions ψ Confinement Direction +z
4 Motivation Explicit Oxide Modeling More than just electrostatics Information about changes in the electronic structure m eff, DOS, band gap (confinement effects?) +z E In the future: traps, vacancies, impurities Confinement Direction +z
5 Can we gain something by doing explicit oxide modeling?
6 Semiconductor-oxide Interfaces L. Ye. et al Appl:interfaces 2013,5,8081 HfO 2 - InAs interface Oxides are often amorphous, multiple crystal phases with large Extended unit cells Huckel Theory tight-binding model selected as Interfaces compromise may between complex, computation with time strain and and generality large implemented in existing NEMO5 simulation tool suite rearrangements of atoms Need a model with flexible coupling calculation
7 Extended Hückel Hamiltonian Onsite elements Off diagonal elements Overlap matrix Diagonal elements are parameters; represent difference between ionization potential and electron affinity Coupling proportional to average of onsites and overlap of wavefunctions Overlaps computed with parameterized Slater-type orbitals for neighbors within specified interaction range Evan Wilson
8 EHT Parameterization a. b. TiO2 a.) and HfO2 b.) bulk band structures calculated with Extended Huckel Theory Oxide EHT parameters were fit to ab-initio density functional theory (DFT) band structures
9 Explicit oxide UTB channel simulation
10 TiO2 Heterostructure Bands Top: InAs/TiO2 super cell relaxed with DFT Bottom: Unrelaxed InAs semiconductor UTB with same crystal orientation TiO2-InAs interface UTB compared same UTB with Hydrogen passivation Heterostructure initial geometry produced by selecting low-strain commensurate lattice super cell Relaxed interface compared with H-passivated semiconductor UTB Slight reduction in band bap, large change in band curvature/dos in conduction band
11 HfO2 Heterostructure Bands InAs UTB E g =0.58 ev HfO2 Hetero. UTB E g =0.21 ev HfO2-InAs interface UTB compared same UTB with Hydrogen passivation Same procedure as in previous slide to produce HfO2 heterostructure Importance of explicit oxide can be seen in confinement effects in UTB s
12 Some visible effects like decreased confinement from explicit band structure, can we estimate effects on current?
13 TOB I-V Curves: TiO2 ~10% difference in 0.1V InAs UTB Channel TiO2/InAs Hetero UTB Limited/negligible effect of explicit oxide on current with this model
14 Conclusions Explicit Oxide Modeling: Limited effect observed for MOSFET current in this model Decreased confinement observed to reduce the band gap Effect on Tunnel FET devices? Sensitive to band gap Increased DOS in some cases Scattering rates may differ in heterostructure, bare UTB cases
15 Future Work EHT and Oxide Modeling Development Full self-consistent Schroedinger-Poisson device simulation with Recursive Green s Functions Scattering Parameterization New materials (oxides, II-VI s) Refine existing parameters
16 Questions?
Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs
Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs Cheng-Ying Huang 1, Sanghoon Lee 1, Evan Wilson 3, Pengyu Long 3, Michael Povolotskyi 3, Varistha Chobpattana
More informationUltra-Scaled InAs HEMTs
Performance Analysis of Ultra-Scaled InAs HEMTs Neerav Kharche 1, Gerhard Klimeck 1, Dae-Hyun Kim 2,3, Jesús. A. del Alamo 2, and Mathieu Luisier 1 1 Network for Computational ti Nanotechnology and Birck
More informationOMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 8-18-28 OMEN an atomistic and full-band quantum transport simulator for post-cmos nanodevices Mathieu Luisier
More informationModeling Transport in Heusler-based Spin Devices
Modeling Transport in Heusler-based Spin Devices Gautam Shine (Stanford) S. Manipatruni, A. Chaudhry, D. E. Nikonov, I. A. Young (Intel) Electronic Structure Extended Hückel theory Application to Heusler
More informationBandstructure Effects in Silicon Nanowire Electron Transport
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 6-15-2008 Bandstructure Effects in Silicon Nanowire Electron Transport Neophytos Neophytou Purdue University - Main
More informationCARRIER TRANSPORT IN ULTRA-SCALED DEVICES. A Thesis. Submitted to the Faculty. Purdue University. Kaushik Balamukundhan. In Partial Fulfillment of the
CARRIER TRANSPORT IN ULTRA-SCALED DEVICES A Thesis Submitted to the Faculty of Purdue University by Kaushik Balamukundhan In Partial Fulfillment of the Requirements for the Degree of Master of Science
More information2 Notice that Eq. (2) is inspired by the contact self-energies of the non-equilibrium Green s function (NEGF) method [12]. The inversion in Eq. (2) re
1 Surface assivation in Empirical Tight Binding Yu He, Yaohua Tan, Zhengping Jiang, Michael ovolotskyi, Gerhard Klimeck, Tillmann Kubis Network for Computational Nanotechnology, urdue University, Indiana
More informationChallenges in the introduction of Band to Band tunneling in semiclassical models for Tunnel-FETs. DIEGM - University of Udine, IU.
Challenges in the introduction of Band to Band tunneling in semiclassical models for Tunnel-FETs, L.De Michielis*, M.Iellina and L.Selmi DIEGM - University of Udine, IU.NET *EPFL Outline Context Quantum
More informationarxiv: v2 [cond-mat.mtrl-sci] 11 Sep 2016
arxiv:1608.05057v2 [cond-mat.mtrl-sci] 11 ep 2016 Transport in vertically stacked hetero-structures from 2D materials Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan, Daniel Valencia, Gerhard Klimeck and
More informationTheory of Hydrogen-Related Levels in Semiconductors and Oxides
Theory of Hydrogen-Related Levels in Semiconductors and Oxides Chris G. Van de Walle Materials Department University of California, Santa Barbara Acknowledgments Computations J. Neugebauer (Max-Planck-Institut,
More informationSurfaces, Interfaces, and Layered Devices
Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Interface between a crystal and vacuum
More informationSurfaces, Interfaces, and Layered Devices
Surfaces, Interfaces, and Layered Devices Building blocks for nanodevices! W. Pauli: God made solids, but surfaces were the work of Devil. Surfaces and Interfaces 1 Role of surface effects in mesoscopic
More informationADVANCED BOUNDARY CONDITION METHOD IN QUANTUM TRANSPORT AND ITS APPLICATION IN NANODEVICES. A Dissertation. Submitted to the Faculty
ADVANCED BOUNDARY CONDITION METHOD IN QUANTUM TRANSPORT AND ITS APPLICATION IN NANODEVICES A Dissertation Submitted to the Faculty of Purdue University by Yu He In Partial Fulfillment of the Requirements
More informationNon-equilibrium Green's function (NEGF) simulation of metallic carbon nanotubes including vacancy defects
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 6-1-2007 Non-equilibrium Green's function (NEGF) simulation of metallic carbon nanotubes including vacancy
More informationAnalysis of InAs Vertical and Lateral Band-to-Band Tunneling. Transistors: Leveraging Vertical Tunneling for Improved Performance
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance Kartik Ganapathi, Youngki Yoon and Sayeef Salahuddin a) Department of Electrical
More informationDefects in Semiconductors
Defects in Semiconductors Mater. Res. Soc. Symp. Proc. Vol. 1370 2011 Materials Research Society DOI: 10.1557/opl.2011. 771 Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors
More informationNEMO5 NanoElectronics MOdeling
Network for Computational Nanotechnology (NCN) NEMO5 NanoElectronics MOdeling Jim Fonseca Harshad Sahasrabudhe Evan Wilson Mehdi Salmani Gerhard Klimeck NEMO5 Overview CPU Scaling Outline ITRS Work-International
More informationElectronics with 2D Crystals: Scaling extender, or harbinger of new functions?
Electronics with 2D Crystals: Scaling extender, or harbinger of new functions? 1 st Workshop on Data Abundant Systems Technology Stanford, April 2014 Debdeep Jena (djena@nd.edu) Electrical Engineering,
More informationHigh Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs
High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs Prof. (Dr.) Tejas Krishnamohan Department of Electrical Engineering Stanford University, CA & Intel Corporation
More informationResonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation.
Optics of Surfaces & Interfaces - VIII September 10 th, 2009 Resonant photo-ionization of point defects in HfO 2 thin films observed by second-harmonic generation. Jimmy Price and Michael C. Downer Physics
More informationLecture 20: Semiconductor Structures Kittel Ch 17, p , extra material in the class notes
Lecture 20: Semiconductor Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure Layer Structure metal Oxide insulator Semiconductor Semiconductor Large-gap Semiconductor
More informationLuminescence basics. Slide # 1
Luminescence basics Types of luminescence Cathodoluminescence: Luminescence due to recombination of EHPs created by energetic electrons. Example: CL mapping system Photoluminescence: Luminescence due to
More information(a) (b) Supplementary Figure 1. (a) (b) (a) Supplementary Figure 2. (a) (b) (c) (d) (e)
(a) (b) Supplementary Figure 1. (a) An AFM image of the device after the formation of the contact electrodes and the top gate dielectric Al 2 O 3. (b) A line scan performed along the white dashed line
More informationElectronic structure and transport in silicon nanostructures with non-ideal bonding environments
Purdue University Purdue e-pubs Other Nanotechnology Publications Birck Nanotechnology Center 9-15-2008 Electronic structure and transport in silicon nanostructures with non-ideal bonding environments
More informationExact Envelope Function Theory Band Structure of Semiconductor Heterostructure
University of Southern Denmark Mads Clausen Institute Exact Envelope Function Theory Band Structure of Semiconductor Heterostructure Daniele Barettin daniele@mci.sdu.dk Summary Introduction k p Model Exact
More informationPerformance Analysis of Ultra-Scaled InAs HEMTs
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 2009 Performance Analysis of Ultra-Scaled InAs HEMTs Neerav Kharche Birck Nanotechnology Center and Purdue University,
More informationAchieving a higher performance in bilayer graphene FET Strain Engineering
SISPAD 2015, September 9-11, 2015, Washington, DC, USA Achieving a higher performance in bilayer graphene FET Strain Engineering Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck and Rajib Rahman
More informationTypical example of the FET: MEtal Semiconductor FET (MESFET)
Typical example of the FET: MEtal Semiconductor FET (MESFET) Conducting channel (RED) is made of highly doped material. The electron concentration in the channel n = the donor impurity concentration N
More informationDefects in materials. Manish Jain. July 8, Department of Physics Indian Institute of Science Bangalore 1/46
1/46 Defects in materials Manish Jain Department of Physics Indian Institute of Science Bangalore July 8, 2014 Outline 2/46 Motivation. Computational methods. Defects in oxides. Why are defects challenging?
More informationTowards Atomistic Simulations of the Electro-Thermal Properties of Nanowire Transistors Mathieu Luisier and Reto Rhyner
Towards Atomistic Simulations of the Electro-Thermal Properties of Nanowire Transistors Mathieu Luisier and Reto Rhyner Integrated Systems Laboratory ETH Zurich, Switzerland Outline Motivation Electron
More informationIndex. buried oxide 35, 44 51, 89, 238 buried channel 56
Index A acceptor 275 accumulation layer 35, 45, 57 activation energy 157 Auger electron spectroscopy (AES) 90 anode 44, 46, 55 9, 64, 182 anode current 45, 49, 65, 77, 106, 128 anode voltage 45, 52, 65,
More informationLecture 6: 2D FET Electrostatics
Lecture 6: 2D FET Electrostatics 2016-02-01 Lecture 6, High Speed Devices 2014 1 Lecture 6: III-V FET DC I - MESFETs Reading Guide: Liu: 323-337 (he mainly focuses on the single heterostructure FET) Jena:
More informationNew Material Design and Device Simulation Tool. Dr. Gong Kui HZWTECH
New Material Design and Device Simulation Tool Dr. Gong Kui HZWTECH 鸿之微科技 ( 上海 ) 股份有限公司 HONGZHIWEI TECHNOLOGY(SHANGHAI) CO.,LTD outline Atomistic-TCAD:new devices simulation tool Applications of Atomistic-TCAD
More informationPart 5: Quantum Effects in MOS Devices
Quantum Effects Lead to Phenomena such as: Ultra Thin Oxides Observe: High Leakage Currents Through the Oxide - Tunneling Depletion in Poly-Si metal gate capacitance effect Thickness of Inversion Layer
More informationAn Extended Hückel Theory based Atomistic Model for Graphene Nanoelectronics
Journal of Computational Electronics X: YYY-ZZZ,? 6 Springer Science Business Media, Inc. Manufactured in The Netherlands An Extended Hückel Theory based Atomistic Model for Graphene Nanoelectronics HASSAN
More informationQuantum Confinement in Graphene
Quantum Confinement in Graphene from quasi-localization to chaotic billards MMM dominikus kölbl 13.10.08 1 / 27 Outline some facts about graphene quasibound states in graphene numerical calculation of
More informationELEC 4700 Assignment #2
ELEC 4700 Assignment #2 Question 1 (Kasop 4.2) Molecular Orbitals and Atomic Orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction
More informationA -SiC MOSFET Monte Carlo Simulator Including
VLSI DESIGN 1998, Vol. 8, Nos. (1-4), pp. 257-260 Reprints available directly from the publisher Photocopying permitted by license only (C) 1998 OPA (Overseas Publishers Association) N.V. Published by
More informationHigh-Performance Complementary III-V Tunnel FETs with Strain Engineering
High-Performance Complementary III-V Tunnel FETs with Strain Engineering Jun Z. Huang, Yu Wang, Pengyu Long, Yaohua Tan, Michael Povolotskyi, and Gerhard Klimeck arxiv:65.955v [cond-mat.mes-hall] 3 May
More informationSimple Theory of the Ballistic Nanotransistor
Simple Theory of the Ballistic Nanotransistor Mark Lundstrom Purdue University Network for Computational Nanoechnology outline I) Traditional MOS theory II) A bottom-up approach III) The ballistic nanotransistor
More informationQuantum Dots: Artificial Atoms & Molecules in the Solid-State
Network for Computational Nanotechnology (NCN) Purdue, Norfolk State, Northwestern, UC Berkeley, Univ. of Illinois, UTEP Quantum Dots: Artificial Atoms & Molecules in the Solid-State Network for Computational
More informationA final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room).
A final review session will be offered on Thursday, May 10 from 10AM to 12noon in 521 Cory (the Hogan Room). The Final Exam will take place from 12:30PM to 3:30PM on Saturday May 12 in 60 Evans.» All of
More informationModeling and Computation of Gate Tunneling Current through Ultra Thin Gate Oxides in Double Gate MOSFETs with Ultra Thin Body Silicon Channel
Modeling and Computation of Gate Tunneling Current through Ultra Thin Gate Oxides in Double Gate MOSFETs with Ultra Thin Body Silicon Channel Bhadrinarayana L V 17 th July 2008 Microelectronics Lab, Indian
More informationNew Tools for the Direct Characterisation of FinFETS
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 2013 New Tools for the Direct Characterisation of FinFETS G. C. Tettamanzi PDelft University of Technology; University
More informationHeterostructures and sub-bands
Heterostructures and sub-bands (Read Datta 6.1, 6.2; Davies 4.1-4.5) Quantum Wells In a quantum well, electrons are confined in one of three dimensions to exist within a region of length L z. If the barriers
More information3-month progress Report
3-month progress Report Graphene Devices and Circuits Supervisor Dr. P.A Childs Table of Content Abstract... 1 1. Introduction... 1 1.1 Graphene gold rush... 1 1.2 Properties of graphene... 3 1.3 Semiconductor
More informationALD high-k and higher-k integration on GaAs
ALD high-k and higher-k integration on GaAs Ozhan Koybasi 1), Min Xu 1), Yiqun Liu 2), Jun-Jieh Wang 2), Roy G. Gordon 2), and Peide D. Ye 1)* 1) School of Electrical and Computer Engineering, Purdue University,
More informationATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA
ATOMIC-SCALE THEORY OF RADIATION-INDUCED PHENOMENA OVERVIEW OF THE LAST FIVE YEARS AND NEW RESULTS Sokrates T. Pantelides Department of Physics and Astronomy, Vanderbilt University, Nashville, TN The theory
More informationPerformance Comparisons of III-V and strained-si in Planar FETs and Non-planar FinFETs at Ultrashort Gate Length (12nm)
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 4-212 Performance Comparisons of III-V and strained-si in Planar and Non-planar Fin at Ultrashort Gate Length (12nm)
More informationScaling Issues in Planar FET: Dual Gate FET and FinFETs
Scaling Issues in Planar FET: Dual Gate FET and FinFETs Lecture 12 Dr. Amr Bayoumi Fall 2014 Advanced Devices (EC760) Arab Academy for Science and Technology - Cairo 1 Outline Scaling Issues for Planar
More informationEE130: Integrated Circuit Devices
EE130: Integrated Circuit Devices (online at http://webcast.berkeley.edu) Instructor: Prof. Tsu-Jae King (tking@eecs.berkeley.edu) TA s: Marie Eyoum (meyoum@eecs.berkeley.edu) Alvaro Padilla (apadilla@eecs.berkeley.edu)
More informationThree Most Important Topics (MIT) Today
Three Most Important Topics (MIT) Today Electrons in periodic potential Energy gap nearly free electron Bloch Theorem Energy gap tight binding Chapter 1 1 Electrons in Periodic Potential We now know the
More informationSpatially resolving density-dependent screening around a single charged atom in graphene
Supplementary Information for Spatially resolving density-dependent screening around a single charged atom in graphene Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu,
More informationElectronic Structure of Surfaces
Electronic Structure of Surfaces When solids made of an infinite number of atoms are formed, it is a common misconception to consider each atom individually. Rather, we must consider the structure of the
More informationQuantum Phenomena & Nanotechnology (4B5)
Quantum Phenomena & Nanotechnology (4B5) The 2-dimensional electron gas (2DEG), Resonant Tunneling diodes, Hot electron transistors Lecture 11 In this lecture, we are going to look at 2-dimensional electron
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationLecture 20 - Semiconductor Structures
Lecture 0: Structures Kittel Ch 17, p 494-503, 507-511 + extra material in the class notes MOS Structure metal Layer Structure Physics 460 F 006 Lect 0 1 Outline What is a semiconductor Structure? Created
More informationDiagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
PHYSICAL REVIEW B 66, 125207 2002 Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory Timothy B. Boykin Department of Electrical and Computer Engineering,
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationImaginary Band Structure and Its Role in Calculating Transmission Probability in Semiconductors
Imaginary Band Structure and Its Role in Calculating Transmission Probability in Semiconductors Jamie Teherani Collaborators: Paul Solomon (IBM), Mathieu Luisier(Purdue) Advisors: Judy Hoyt, DimitriAntoniadis
More informationGaN based transistors
GaN based transistors S FP FP dielectric G SiO 2 Al x Ga 1-x N barrier i-gan Buffer i-sic D Transistors "The Transistor was probably the most important invention of the 20th Century The American Institute
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationDevice 3D. 3D Device Simulator. Nano Scale Devices. Fin FET
Device 3D 3D Device Simulator Device 3D is a physics based 3D device simulator for any device type and includes material properties for the commonly used semiconductor materials in use today. The physical
More informationHow a single defect can affect silicon nano-devices. Ted Thorbeck
How a single defect can affect silicon nano-devices Ted Thorbeck tedt@nist.gov The Big Idea As MOS-FETs continue to shrink, single atomic scale defects are beginning to affect device performance Gate Source
More informationPhysics an performance of III-V nanowire heterojunction TFETs including phonon and impurity band tails:
Physics an performance of III-V nanowire heterojunction TFETs including phonon and impurity band tails: An atomistic mode space NEGF quantum transport study. A. Afzalian TSMC, Leuven, Belgium (Invited)
More informationAll-inkjet printed electronic circuits: Dielectrics and surface passivation techniques for improved operational stability and lifetime
All-inkjet printed electronic circuits: Dielectrics and surface passivation techniques for improved operational stability and lifetime M. C. R. Medeiros 1, F. Villani 2, A. T. Negrier 3, F. Loffredo 2,
More informationIntroduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić
Introduction to Density Functional Theory with Applications to Graphene Branislav K. Nikolić Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, U.S.A. http://wiki.physics.udel.edu/phys824
More informationConcepts in Surface Physics
M.-C. Desjonqueres D. Spanjaard Concepts in Surface Physics Second Edition With 257 Figures Springer 1. Introduction................................. 1 2. Thermodynamical and Statistical Properties of
More informationRashba spin-orbit coupling in the oxide 2D structures: The KTaO 3 (001) Surface
Rashba spin-orbit coupling in the oxide 2D structures: The KTaO 3 (001) Surface Sashi Satpathy Department of Physics University of Missouri, Columbia, USA E Ref: K. V. Shanavas and S. Satpathy, Phys. Rev.
More informationTOTAL IONIZING DOSE RADIATION EFFECTS AND NEGATIVE BIAS TEMPERATURE INSTABILITY ON SiGe pmos DEVICES
TOTAL IONIZING DOSE RADIATION EFFECTS AND NEGATIVE BIAS TEMPERATURE INSTABILITY ON SiGe pmos DEVICES By Guoxing Duan Thesis Submitted to the Faculty of the Graduate school of Vanderbilt University in partial
More informationLecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations
Lecture 1 OUTLINE Basic Semiconductor Physics Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations Reading: Chapter 2.1 EE105 Fall 2007 Lecture 1, Slide 1 What is a Semiconductor? Low
More informationUnderstanding the effect of n-type and p-type doping in the channel of graphene nanoribbon transistor
Bull. Mater. Sci., Vol. 39, No. 5, September 2016, pp. 1303 1309. DOI 10.1007/s12034-016-1277-9 c Indian Academy of Sciences. Understanding the effect of n-type and p-type doping in the channel of graphene
More informationUltimately Scaled CMOS: DG FinFETs?
Ultimately Scaled CMOS: DG FinFETs? Jerry G. Fossum SOI Group Department of Electrical and Computer Engineering University of Florida Gainesville, FL 32611-6130 J. G. Fossum / 1 Outline Introduction -
More information2. TranSIESTA 1. SIESTA. DFT In a Nutshell. Introduction to SIESTA. Boundary Conditions: Open systems. Greens functions and charge density
1. SIESTA DFT In a Nutshell Introduction to SIESTA Atomic Orbitals Capabilities Resources 2. TranSIESTA Transport in the Nanoscale - motivation Boundary Conditions: Open systems Greens functions and charge
More informationIndium arsenide quantum wire trigate metal oxide semiconductor field effect transistor
JOURNAL OF APPLIED PHYSICS 99, 054503 2006 Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor M. J. Gilbert a and D. K. Ferry Department of Electrical Engineering and
More informationGRAPHENE NANORIBBONS TRANSPORT PROPERTIES CALCULATION. Jan VOVES
GRAPHENE NANORIBBONS TRANSPORT PROPERTIES CALCULATION Jan VOVES Czech Technical University in Prague, Faculty of Electrical Engineering, Technicka 2, CZ-16627 Prague 6 Czech Republic, voves@fel.cvut.cz
More informationElectrical control of spin relaxation in a quantum dot. S. Amasha et al., condmat/
Electrical control of spin relaxation in a quantum dot S. Amasha et al., condmat/07071656 Spin relaxation In a magnetic field, spin states are split b the Zeeman energ = g µ B B Provides a two-level sstem
More informationHOT-CARRIER RELIABILITY SIMULATION IN AGGRESSIVELY SCALED MOS TRANSISTORS. Manish P. Pagey. Dissertation. Submitted to the Faculty of the
HOT-CARRIER RELIABILITY SIMULATION IN AGGRESSIVELY SCALED MOS TRANSISTORS By Manish P. Pagey Dissertation Submitted to the Faculty of the Graduate School of Vanderbilt University in partial fulfillment
More informationQuantum Corrections for Monte Carlo Simulation
Quantum Corrections for Monte Carlo Simulation Brian Winstead and Umberto Ravaioli Beckman Institute University of Illinois at Urbana-Champaign Outline Quantum corrections for quantization effects Effective
More informationElectroluminescence from Silicon and Germanium Nanostructures
Electroluminescence from silicon Silicon Getnet M. and Ghoshal S.K 35 ORIGINAL ARTICLE Electroluminescence from Silicon and Germanium Nanostructures Getnet Melese* and Ghoshal S. K.** Abstract Silicon
More informationLecture 9. Strained-Si Technology I: Device Physics
Strain Analysis in Daily Life Lecture 9 Strained-Si Technology I: Device Physics Background Planar MOSFETs FinFETs Reading: Y. Sun, S. Thompson, T. Nishida, Strain Effects in Semiconductors, Springer,
More informationSupplementary Figures
Supplementary Figures 8 6 Energy (ev 4 2 2 4 Γ M K Γ Supplementary Figure : Energy bands of antimonene along a high-symmetry path in the Brillouin zone, including spin-orbit coupling effects. Empty circles
More informationQuantum Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors
Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors Shih-Ching Lo 1, Yiming Li 2,3, and Jyun-Hwei Tsai 1 1 National Center for High-Performance
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 Outline - Goals of the course. What is electronic device?
More informationSolid State Device Fundamentals
Solid State Device Fundamentals ENS 345 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 Office 4N101b 1 The free electron model of metals The free electron model
More information4.2 Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule.
4. Molecular orbitals and atomic orbitals Consider a linear chain of four identical atoms representing a hypothetical molecule. Suppose that each atomic wavefunction is 1s wavefunction. This system of
More informationEFFICIENT INELASTIC SCATTERING IN ATOMISTIC TIGHT BINDING. A Thesis. Submitted to the Faculty. Purdue University. James A. Charles
EFFICIENT INELASTIC SCATTERING IN ATOMISTIC TIGHT BINDING A Thesis Submitted to the Faculty of Purdue University by James A. Charles In Partial Fulfillment of the Requirements for the Degree of Master
More informationPlasma-Surface Interactions in Patterning High-k k Dielectric Materials
Plasma-Surface Interactions in Patterning High-k k Dielectric Materials October 11, 4 Feature Level Compensation and Control Seminar Jane P. Chang Department of Chemical Engineering University of California,
More informationarxiv:cond-mat/ v1 [cond-mat.mtrl-sci] 4 Oct 2004
The role of nitrogen related defects in high-k dielectric oxides: density functional studies arxiv:cond-mat/0410088v1 [cond-mat.mtrl-sci] 4 Oct 2004 J. L. Gavartin 1, A. S. Foster 2, G. I. Bersuker 3 and
More informationwhat happens if we make materials smaller?
what happens if we make materials smaller? IAP VI/10 ummer chool 2007 Couvin Prof. ns outline Introduction making materials smaller? ynthesis how do you make nanomaterials? Properties why would you make
More informationThis article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.
This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented. References IEICE Electronics Express, Vol.* No.*,*-* Effects of Gamma-ray radiation on
More information! Previously: simple models (0 and 1 st order) " Comfortable with basic functions and circuits. ! This week and next (4 lectures)
ESE370: CircuitLevel Modeling, Design, and Optimization for Digital Systems Lec 6: September 14, 2015 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationStretching the Barriers An analysis of MOSFET Scaling. Presenters (in order) Zeinab Mousavi Stephanie Teich-McGoldrick Aseem Jain Jaspreet Wadhwa
Stretching the Barriers An analysis of MOSFET Scaling Presenters (in order) Zeinab Mousavi Stephanie Teich-McGoldrick Aseem Jain Jaspreet Wadhwa Why Small? Higher Current Lower Gate Capacitance Higher
More information! CMOS Process Enhancements. ! Semiconductor Physics. " Band gaps. " Field Effects. ! MOS Physics. " Cut-off. " Depletion.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 9, 019 MOS Transistor Theory, MOS Model Lecture Outline CMOS Process Enhancements Semiconductor Physics Band gaps Field Effects
More informationA Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect Nadim Chowdhury, Imtiaz Ahmed, Zubair Al Azim,Md. Hasibul Alam, Iftikhar Ahmad
More informationarxiv: v1 [cond-mat.mes-hall] 27 Mar 2010
Intrinsic Limits of Subthreshold Slope in Biased Bilayer arxiv:1003.5284v1 [cond-mat.mes-hall] 27 Mar 2010 Graphene Transistor Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat and Yu-Ming Lin Department
More informationPerformance Analysis of 60-nm Gate-Length III-V InGaAs HEMTs: Simulations Versus Experiments
Purdue University Purdue e-pubs Birck and NCN Publications Birck Nanotechnology Center 7-2009 Performance Analysis of 60-nm Gate-Length III-V InGaAs HEMTs: Simulations Versus Experiments Neophytou Neophytos
More informationᣂቇⴚ㗔 䇸䉮䊮䊏䊠䊷䊁䉞䉪䉴䈮䉋䉎 䊂䉱䉟䊮䋺ⶄว 㑐䈫㕖ᐔⴧ䉻䉟䊅䊚䉪䉴䇹 ᐔᚑ22ᐕᐲ ળ䇮2011ᐕ3 4ᣣ䇮 ੩ᄢቇᧄㇹ䉨䊞䊮䊌䉴 㗄 A02 ኒᐲ 㑐ᢙᴺℂ 䈮ၮ䈨䈒㕖ᐔⴧ 䊅䊉䉴䉬䊷䊦㔚 વዉ䉻䉟䊅䊚䉪䉴 ઍ ᄢᎿ ㆺ
22201134 A02 GCOE Si device (further downsizing) Novel nanostructures (such as atomic chain) Nanoscale multi-terminal resistance measurement Carbon nanotube transistor Atomic switch Interplay:l Dynamics:
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Lec 6: September 18, 2017 MOS Model You are Here: Transistor Edition! Previously: simple models (0 and 1 st order) " Comfortable
More informationThe negatively charged insulator-semiconductor structure: Concepts, technological considerations and applications
The negatively charged insulator-semiconductor structure: Concepts, technological considerations and applications D. König, G. Ebest Department of Electronic Devices, Technical University of Chemnitz,
More information