2. TranSIESTA 1. SIESTA. DFT In a Nutshell. Introduction to SIESTA. Boundary Conditions: Open systems. Greens functions and charge density
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2 1. SIESTA DFT In a Nutshell Introduction to SIESTA Atomic Orbitals Capabilities Resources 2. TranSIESTA Transport in the Nanoscale - motivation Boundary Conditions: Open systems Greens functions and charge density Notions of quantum transport Some details (preview)
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4 Ψ({ r i }) n( r ) 1. (Hohenberg-Kohn Theorems) n( r ) = occ n ψ n ( r ) 2 h ˆ ψ n ( r ) = ε n ψ n ( r ) ˆ h = ˆ V eff [n] ˆ V eff [n]=v ext ( r) + V ˆ H [ n] ( r) + V ˆ xc [ n] LDA GGA
5 ψ n ( r )= µ c nµ φ µ ( r ) SCF ρ( r ) = occ n ψ n ( r ) 2
6 Spanish Initiative for Electronic Simulations with Thousands of Atoms Soler, Artacho, Gale, García, Junquera, Ordejón and Sánchez-Portal J. Phys.: Cond. Matt 14, 2745 (2002) Valence electrons: Flexible bases of Numerical Pseudo-atomic Orbitals with Finite Range (Pseudopotentials to elliminate the core electrons) Implements O(N) methodology Atomic forces and stress MD simulations Very efficient: capable of trating large systems with modest computers Parallelized Freely available for the academic community
7 Atomic orbitals: LCAO: ψ n ( r )= µ c nµ φ µ ( r ) Radial part: Numerical Pseudo-atomic Orbitals with Finite Range Spherical harmonics s p d Size: Number of orbitals for a given lm n Range: Spatial extension of the orbitals Shape: of the radial part f
8 Used to compute ρ(r) in order to calculate: - XC potential (non linear function of ρ(r) ) - Solve Poisson equation to get Hartree potential - Calculate Matrix Elements of KS Hamiltonian <φ i (r-r i ) V(r) φ j (r-r j )> (Hartree potential, XC potential, local pseudopotential...) - Mesh cut-off: highest energy of PW that can be represented with such grid.
9 Relaxations - Atomic coordinates - Cell shape & size Phonons, elastic constants,... Band structures (k-point sampling) Population analysis Charge distributions Electrostatic Potentials Electric Polarization Molecular Dynamics: - E, V - T, V (Nose Thermostat) - P (Parrinello-Rahman) - T, P - Quenching, annealing... Density of States, COOP,... Spin distributions Non-collinear spin states STM image simulation... LSDA, GGA (including Non-collinear spin states). Van der Waals Functionans (Langreth-Lundqvist) Time Dependent DFT (time evolution) LDA+U, SIC Spin-Orbit Coupling
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11 Miniaturization of Electronic Devices Eniac computer (1947) Challenges: Leak currents at gate oxide Pentium processor (2000) Current technologies: 65 to 22 nm Quantum confinement effects (semi-classical theory starts to fail) Lithographic top-down printing of smaller features Atomic limit: doping becomes unreliable
12 New approach to electronics: Bottom-up design Huge experimental progress in fabrication and characterization R. Stadler, M. Forshaw and C. Joachim, Nanotechnology 14, 138 (2003) Atomic wires: quantized conductance Diodes (with single molecules) Negative differential resistance Molecular Transistors (e.g., with nanotubes) Single-electron Transistor - Coulomb blockade Inelastic effects (phonons IETS) Kondo resonances...
13 Strong need for theoretical methods for molecular electronics and nanoeletronics: Quantum Behavior (semiclassical models are not applicable) L d R - V +
14 Infinite but non-periodic systems:
15 Retarded Green s Function: it is related to the spectral density and the density matrix occ ρ(e) = n FD (E) c * iµ c iν δ(e E i ) n Can be used in practice to compute the density matrix and the charge density without computing the eigenvectors/eigenvalues Useful for solving systems with extra interactions (for instance, among different subsystems)
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17 If the system can be divided into two sub-systems, we can take the couping V as the interaction in Dyson s equation (note that V needs not to be small!): We have: with Using Dyson s eq. it is easy to prove that: Self energy Σ B - Non-hermitian, energy dependent potential - Accounts exactly for the effect of region B on A
18 1. Split the system into: Central region (where we are interested) Embedding or Electrodes region 2. Solve the Green Function G B of the embedding region 3. Calclate the self-energy due to the embedding 4. Solve the Green s Function of the central region
19 E µ R µ L = µ+δµ µ L µ R = δµ = ev k I = - 2e bands i BZ d k f ( k ) v g ( k, i) QUANTUM OF CONDUCTANCE
20 T ε ( ) =Tr [t + t] ε ( ) transmission matrix: I ev Non-interacting electrons Scattering-free leads (perfect crystalline electrodes) Electrons incident from left/right are in thermal equilibriumwith left/right reservoirs. Complete thermalization of electrons upon entering reservoir No back-scattering at lead-reservoir interface
21 L C R Coupling the finite contact to infinite electrodes Greens Functions
22 L C R Contact: Contains the molecule, and part of the Right and Left electrodes Sufficiently large to include the screening C B L R B Solution in finite system: Σ (ε ) = Selfenergies. Can be obtained from the bulk Greens functions Lopez-Sancho et al. J. Phys. F 14, 1205 (1984)
23 Bulk Greens functions and self-energies (unit cell calculation) Hamiltonian of the Contact region: Solution of GF s equations ρ(r) SCF PBC Landauer conductance: transmission probability: T ε ( ) =Tr [t + t] ( ε)
24 L C R Keldysh-Kadanoff-Baym Green s Functions Same equations can be derived using scattering states
25 L C R
26 Poisson s Eq: 2 V (r) = ρ(r) Given ρ(r), V H (r) is determined except up to a linear term: φ( r): particular solution of Poisson s equation +V/2 Au 12 au -V/2 Au a and b: determined imposing BC: the shift V between electrodes φ (r) computed using FFT s Linear term:
27 Good statistics: 1 atom=1 conductance quantum Onishi et al., Nature 395, 780 (1998) Linear I/V curves Brandbyge et al., PRB 52, 8499 (1995) Hansen et al., APL 77, 708 (2000)
28 Calculation: Bandstructure of infinite chain Experiment: dzx,dyz Same result (T 1) obtained, irrespective of chain length, electrode surface, strain, etc., which explains the narrow peak at 1 G o in the histograms
29 Voltage drop through the contact Almost linear I/V curve e Density Change in Density
30 1. DFT Calculations through SIESTA (numerical, confined atomic orbitals) 2. Transport Calculations: Define your system!. Contact region; Electrodes Bulk calculation for the electrodes Calculation of open system as Contact region + Self-energies Use NEGF s to obtain the charge densty and potential (under zero or finite bias) Obtain the transport properties from the Greens Functions (transmission matrix, conductance,...)
1. Motivation 1. Motivation 1. Motivation L d R - V + 2. Bulk Transport E( k ) = 2 k 2 2m * ε µ) 2. Bulk Transport 2. Bulk Transport k d = -eeτ 3. Some basic concepts τ l m =vτ l ϕ λ = 2π/k 3. Some basic
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