G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.

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1 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from APEC provid th dsignr with th bst combination of fast switching, low on-rsistanc and cost-ffctivnss. Th AP9971GH-HF-3 is in th TO-252 packag which is widly prfrrd for commrcial and industrial surfac mount applications such as mdium-powr DC/DC convrtrs. Th through-hol TO-251 vrsion (AP9971GJ-HF-3) is availabl whr a small PCB footprint is rquird. G D S TO-252 (H) Absolut Maximum Ratings G D S TO-251 (J) V DS V GS I D I D I DM C C P D at T C =25 C Total Powr Dissipation 39 W Linar Drating Factor.31 W/ C T STG T J Symbol Paramtr Rating Units Drain-Sourc Voltag 6 V Gat-Sourc Voltag + 2 V at T =25 C Continuous Drain Currnt 3 25 A at T =1 C Continuous Drain Currnt 3 16 A Thrmal Data Pulsd Drain Currnt 1 8 A Storag Tmpratur Rang -55 to 15 C Oprating Junction Tmpratur Rang -55 to 15 C Symbol Paramtr Valu Unit Rthj-c Maximum Thrmal Rsistanc, Junction-cas 3.2 C/W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint (PCB mount) C/W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint 11 C/W Ordring Information AP9971GH-HF-3TR AP9971GJ-HF-3TB RoHS-compliant, halogn-fr TO-252 shippd on tap and rl (3 pcs/rl) RoHS-compliant, halogn-fr TO-251 shippd in tubs /6

2 Elctrical Spcifications at T j =25 C (unlss othrwis spcifid) Symbol Paramtr Tst Conditions Min. Typ. Max. Units BV DSS Drain-Sourc Brakdown Voltag V GS =V, I D =25uA V BV DSS / Tj Brakdown Voltag Tmpratur Cofficint Rfrnc to 25 C, I D =1mA V/ C R DS(ON) Static Drain-Sourc On-Rsistanc 2 V GS =1V, I D =18A mω V GS =4.5V, I D =12A mω V GS(th) Gat Thrshold Voltag V DS =V GS, I D =25uA 1-3 V g fs Forward Transconductanc V DS =1V, I D =18A S I DSS Drain-Sourc Lakag Currnt V DS =6V, V GS =V ua Drain-Sourc Lakag Currnt (T j =125 o C) V DS =48V,V GS =V ua I GSS Gat-Sourc Lakag V GS = ±2V, V DS =V - - ±1 na Q g Total Gat Charg 2 I D =18A nc Q gs Gat-Sourc Charg V DS =48V nc Q gd Gat-Drain ("Millr") Charg V GS =4.5V nc t d(on) Turn-on Dlay Tim 2 V DS =3V ns t r Ris Tim I D =18A ns t d(off) Turn-off Dlay Tim R G =3.3Ω, V GS =1V ns t f Fall Tim R D =1.67Ω ns C iss Input Capacitanc V GS =V pf C oss Output Capacitanc V DS =25V pf C rss Rvrs Transfr Capacitanc f=1.mhz pf Sourc-Drain Diod Symbol Paramtr Tst Conditions Min. Typ. Max. Units V SD Forward On Voltag 2 I S =25A, V GS =V V t rr Rvrs Rcovry Tim 2 I S =18A, V GS =V, ns Q rr Rvrs Rcovry Charg di/dt=1a/µs nc Nots: 1.Puls width limitd by maximum junction tmpratur. 2.Puls tst 3.Surfac mountd on 1 in 2 coppr pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2/6

3 Typical Elctrical Charactristics T C =25 o C 1V 7.V 6 T C =15 o C 1V 7.V I D, Drain Currnt (A) V 4.5V I D, Drain Currnt (A) V 4.5V 2 2 V G =3.V 1 V G =3.V V DS, Drain-to-Sourc Voltag (V) V DS, Drain-to-Sourc Voltag (V) Fig 1. Typical Output Charactristics Fig 2. Typical Output Charactristics I D =18A T C =25 o C I D =18A V G =1V 2. R DS(ON) (mω) 35 3 Normalizd R DS(ON) V GS, Gat-to-Sourc Voltag (V) T j, Junction Tmpratur ( o C) Fig 3. On-Rsistanc vs. Gat Voltag Fig 4. Normalizd On-Rsistanc vs. Junction Tmpratur IS(A) 12 T j =15 o C T j =25 o C V GS(th) (V) V SD, Sourc-to-Drain Voltag (V) T j,junction Tmpratur ( o C) Fig 5. Forward Charactristic of Rvrs Diod Fig 6. Gat Thrshold Voltag vs. Junction Tmpratur 3/6

4 Typical Elctrical Charactristics (cont.) 14 1 f=1.mhz 12 I D =18A V GS, Gat to Sourc Voltag (V) V DS =3V V DS =38V V DS =48V C (pf) 1 1 C iss C oss C rss Q G, Total Gat Charg (nc) V DS, Drain-to-Sourc Voltag (V) Fig 7. Gat Charg Charactristics Fig 8. Typical Capacitanc Charactristics 1 1 I D (A) 1 1 T C =25 o C Singl Puls 1us 1us 1ms 1ms 1ms DC Normalizd Thrmal Rspons (R thjc ).1 Duty factor= Singl Puls P DM t T Duty factor = t/t Pak T j = P DM x R thjc + T C V DS, Drain-to-Sourc Voltag (V) t, Puls Width (s) Fig 9. Maximum Saf Oprating Ara Fig 1. Effctiv Transint Thrmal Impdanc V DS 9% V G 5V Q G Q GS Q GD 1% V GS t d(on) t r t d(off)t f Charg Q Fig 11. Switching Tim Wavforms Fig 12. Gat Charg Wavform 4/6

5 Packag Dimnsions: TO-252 D D1 E3 E2 E1 Millimtrs SYMBOLS MIN NOM MAX A A B D D E F F E E C B1 F1 F 1. All dimnsions ar in millimtrs. 2. Dimnsions do not includ mold protrusions. A2 R :.127~.381 A3 (.1mm C Marking Information: TO-252 Lasr Marking Product: AP GH YWWSSS Packag cod GH = RoHS-compliant halogn-fr TO-252 Dat/lot cod (YWWSSS) Y: Last digit of th yar WW: Work wk SSS: Lot cod squnc 5/6

6 Packag Dimnsions: TO-251 D A c1 SYMBOLS Millimtrs MIN NOM MAX D1 A E2 A B E1 E B c c D B2 A1 D E E B1 F E F c 1. All dimnsions ar in millimtrs. 2. Dimnsions do not includ mold protrusions. Marking Information: TO-251 Product: AP GJ YWWSSS Packag Cod GJ = RoHS-compliant halogn-fr TO-251 Dat Cod (YWWSSS) Y: Last digit of th yar WW: Work wk SSS : Lot cod squnc 6/6

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3

G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from