G D S. Drain-Source Voltage 30 V Gate-Source Voltage. at T =100 C Continuous Drain Current 3
|
|
- Polly Harvey
- 6 years ago
- Views:
Transcription
1 N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low Gat Charg R DS(ON) 25mΩ G RoHS-compliant, halogn-fr I D 28A S BV DSS 30V Dscription Advancd Powr MOSFETs from APEC provid th dsignr with th bst combination of fast switching, low on-rsistanc and cost-ffctivnss. Th AP40T03GH-HF-3 is in th TO-252 packag which is widly prfrrd for commrcial and industrial surfac mount applications such as mdium-powr DC/DC convrtrs. Th through-hol TO-251 vrsion (AP40T03GJ-HF-3) is availabl whr a small PCB footprint is rquird. G D S TO-252 (H) Absolut Maximum Ratings G D S TO-251 (J) V DS V GS I D I D I DM C C P D at T C=25 C Total Powr Dissipation W Linar Drating Factor 0.25 W/ C T STG T J Symbol Paramtr Rating Units Drain-Sourc Voltag 30 V Gat-Sourc Voltag ±25 V at T =25 C Continuous Drain Currnt 3 28 A at T =0 C Continuous Drain Currnt 3 24 A Thrmal Data Ordring Information Pulsd Drain Currnt 1 95 A Storag Tmpratur Rang -55 to 150 C Oprating Junction Tmpratur Rang -55 to 150 C Symbol Paramtr Valu Unit Rthj-c Maximum Thrmal Rsistanc, Junction-cas 4 C/W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint(PCB mount) C/W Rthj-a Maximum Thrmal Rsistanc, Junction-ambint 1 C/W AP40T03GH-HF-3TR AP40T03GJ-HF-3TB RoHS-compliant halogn-fr TO-252 shippd on tap and rl (3000 pcs/rl) RoHS-compliant halogn-fr TO-251 shippd in tubs /6
2 Elctrical Spcifications at T j =25 C (unlss othrwis spcifid) Symbol Paramtr Tst Conditions Min. Typ. Max. Units BV DSS Drain-Sourc Brakdown Voltag V GS =0V, I D =250uA V BV DSS / Tj Brakdown Voltag Tmpratur Cofficint Rfrnc to 25 C, I D =1mA V/ C R DS(ON) Static Drain-Sourc On-Rsistanc 2 V GS =V, I D =18A mω V GS =4.5V, I D =14A mω V GS(th) Gat Thrshold Voltag V DS =V GS, I D =250uA 1-3 V g fs Forward Transconductanc V DS =V, I D =18A S I DSS Drain-Sourc Lakag Currnt V DS =30V, V GS =0V ua Drain-Sourc Lakag Currnt (T j =150 o C) V DS =24V, V GS =0V ua I GSS Gat-Sourc Lakag V GS = ±25V, V DS =0V - - ±0 na Q g Total Gat Charg 2 I D =18A nc Q gs Gat-Sourc Charg V DS =20V nc Q gd Gat-Drain ("Millr") Charg V GS =4.5V nc t d(on) Turn-on Dlay Tim 2 V DS =15V ns t r Ris Tim I D =18A ns t d(off) Turn-off Dlay Tim R G =3.3Ω, V GS =V - - ns t f Fall Tim R D =0.83Ω ns C iss Input Capacitanc V GS =0V pf C oss Output Capacitanc V DS =25V pf C rss Rvrs Transfr Capacitanc f=1.0mhz pf Sourc-Drain Diod Symbol Paramtr Tst Conditions Min. Typ. Max. Units I S Continuous Sourc Currnt ( Body Diod ) V D =V G =0V, V S =1.3V A I SM Pulsd Sourc Currnt ( Body Diod ) A V SD Forward On Voltag 2 T j =25 C, I S =28A, V GS =0V V Nots: 1.Puls width limitd by maximum junction tmpratur. 2.Puls tst - puls width < 300µs, duty cycl < 2% 3.Surfac mountd on 1 in 2 coppr pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2/6
3 Typical Elctrical Charactristics T C =25 o C V 8.0V T C =150 o C V 8.0V I D, Drain Currnt (A) V V G =4.0V I D, Drain Currnt (A) V V G =4.0V V DS, Drain-to-Sourc Voltag (V) V DS, Drain-to-Sourc Voltag (V) Fig 1. Typical Output Charactristics Fig 2. Typical Output Charactristics I D =14A T C =25 C I D =18A V G =V R DS(ON) (mω) Normalizd R DS(ON) V GS, Gat-to-Sourc Voltag (V) T j, Junction Tmpratur ( o C) Fig 3. On-Rsistanc vs. Gat Voltag Fig 4. Normalizd On-Rsistanc vs. Junction Tmpratur T j =150 o C T j =25 o C I S (A) V GS(th) (V) V SD, Sourc-to-Drain Voltag (V) T j, Junction Tmpratur ( o C ) Fig 5. Forward Charactristic of Fig 6. Gat Thrshold Voltag vs. Rvrs Diod Junction Tmpratur 3/6
4 Typical Elctrical Charactristics (cont.) f=1.0mhz I D =18A C iss V GS, Gat to Sourc Voltag (V) V DS =V V DS =15V V DS =20V C (pf) 0 C oss C rss Q G, Total Gat Charg (nc) V DS,Drain-to-Sourc Voltag (V) Fig 7. Gat Charg Charactristics Fig 8. Typical Capacitanc Charactristics 0 1 I D (A) 1 T C =25 o C Singl Puls V DS,Drain-to-Sourc Voltag (V) 0us 1ms ms 0ms DC Normalizd Thrmal Rspons (R thjc ) Duty factor = P DM 0.02 t 0.01 T Singl Puls Duty Factor = t/t Pak T j = P DM x R thjc + T C t, Puls Width (s) Fig 9. Maximum Saf Oprating Ara Fig. Effctiv Transint Thrmal Impdanc V DS 90% V G 4.5V Q G Q GS Q GD % V GS t d(on) t r t d(off)t f Charg Q Fig 11. Switching Tim Wavforms Fig 12. Gat Charg Wavform 4/6
5 Packag Dimnsions: TO-252 D D1 E3 E2 E1 Millimtrs SYMBOLS MIN NOM MAX A A B D D E F F E E C B1 F1 F 1. All dimnsions ar in millimtrs. 2. Dimnsions do not includ mold protrusions. A2 R : 0.127~0.381 A3 (0.1mm C Marking Information: TO-252 Lasr Marking Product: AP40T03 40T03GH YWWSSS Packag cod GH = RoHS-compliant halogn-fr TO-252 Dat/lot cod (YWWSSS) Y: Last digit of th yar WW: Work wk SSS: Lot cod squnc 5/6
6 Packag Dimnsions: TO-251 D A c1 SYMBOLS Millimtrs MIN NOM MAX D1 A E2 A B E1 E B c c D B2 A1 D E E B1 F E F c 1. All dimnsions ar in millimtrs. 2. Dimnsions do not includ mold protrusions. Marking Information: TO-251 Product: AP40T03 40T03GJ YWWSSS Packag Cod GJ = RoHS-compliant halogn-fr TO-251 Dat Cod (YWWSSS) Y: Last digit of th yar WW: Work wk SSS : Lot cod squnc 6/6
G D S. Drain-Source Voltage 60 V Gate-Source Voltage + 20 V. at T =100 C Continuous Drain Current 3. Linear Derating Factor 0.
N-channl Enhancmnt-mod Powr MOSFET Simpl Driv Rquirmnt D Fast Switching Charactristics Low On-rsistanc R DS(ON) 36mΩ G RoHS-compliant, halogn-fr I D 25A S BV DSS 6V Dscription Advancd Powr MOSFETs from
More informationAP4604P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P6P Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS V Ultra-low On-resistance R DS(ON) 37mΩ 3 Fast Switching Characteristic I
More informationIXBT22N300HV IXBH22N300HV
High Voltag, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advanc Tchnical Information IXBTNHV IXBHNHV V CS = V = A V C(sat). TO-6HV (IXBT) Symbol Tst Conditions Maximum Ratings V CS = 5 C to
More informationIXTT3N200P3HV IXTH3N200P3HV
Advanc Tchnical Information High Voltag Powr MOSFET S I R S(on) = V = A N-Channl Enhancmnt Mod TO-HV (IXTT) G S (Tab) Symbol Tst Conditions Maximum Ratings S = C to C V V GR = C to C, R GS = M V S Continuous
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) http://www.willsemi.com
More informationAOP606 Complementary Enhancement Mode Field Effect Transistor
AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationAO4620 Complementary Enhancement Mode Field Effect Transistor
AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationP-Channel Enhancement Mode Mosfet
WPM34 WPM34 P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features Higher Efficiency Extending Battery Life Miniature SOT3-3 Surface Mount Package Super high density cell design for extremely
More informationAON4605 Complementary Enhancement Mode Field Effect Transistor
AON5 Complementary Enhancement Mode Field Effect Transistor General Description The AON5 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form
More informationMax Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG
3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
More informationAON V N-Channel MOSFET
AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D
More informationTrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated V DSS I D25 R DS(on) TO-263 (IXTA) = V = A 7mΩ Symbol Test Conditions Maximum Ratings V DSS T J = 25
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
More informationTrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
3V NChannel MOSFET General Description Trench Power MOSFET technology Very Low R DS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V
More informationAO V Dual P + N-Channel MOSFET
4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters
More informationProduct Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J
P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise
More informationAOD466 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
More informationIXFH400N075T2 IXFT400N075T2
Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1
AON74B 3V NChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationAOD4184A 40V N-Channel MOSFET
4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationAO7401 P-Channel Enhancement Mode Field Effect Transistor
Nov P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge, and operation with gate voltages as low as.5v,
More informationAO3411 P-Channel Enhancement Mode Field Effect Transistor
January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V
AON7 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at 4.V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A
AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery
More information-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
More informationPPM3T60V2 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V
More informationAON V N-Channel SRFET
AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View
AON78 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationN-Channel 30-V (D-S) MOSFET With Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1
3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationAOT404 N-Channel Enhancement Mode Field Effect Transistor
AOT44 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT44 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
More informationV DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D
AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
More informationAON V Channel AlphaSGT TM
AON6 V Channel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Driven RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R
More informationAONR V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G
AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1
AON7556 3V NChannel AlphaMOS General Description Trench Power AlphaMOS (αmos LV) technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D
More informationSSF7NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More informationIXTT440N04T4HV V DSS
Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS
More informationIXFL32N120P. Polar TM HiPerFET TM Power MOSFET V DSS I D25 = 1200V = 24A. 300ns. Preliminary Technical Information. R DS(on) t rr
Preliminary Technical Information Polar TM HiPerFET TM Power MOSFET ( Electrically Isolated Tab) V DSS I D25 R DS(on) t rr = V = 2A 3mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTA182N55T IXTP182N55T V DSS = 55 V I D25 = 182 A R DS(on) 5. m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings
More informationM C C. Revision: A 2017/01/27 MCQ15N10Y SOP-8. Features Halogen free available upon request by adding suffix "-HF"
omponents 2736 Marilla Street Chatsworth!"# $%!"# MCQNY Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering
More informationAO4802 Dual N-Channel Enhancement Mode Field Effect Transistor
July 2 AO482 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO482 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. They offer operation
More informationAON V Common-Drain Dual N-Channel MOSFET
2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree
More informationIRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationIXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247
High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,
More informationIXTN600N04T2. TrenchT2 TM GigaMOS TM Power MOSFET = 40V = 600A. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TrenchT2 TM GigaMOS TM Power MOSFET IXTN6N4T2 V DSS = 4V I D25 = 6A R DS(on) 1.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode minibloc, SOT-227 E153432 Symbol Test Conditions Maximum
More informationA I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationSOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage V GS(th)
More informationDUAL P-CHANNEL MATCHED MOSFET PAIR
DVNCD INR DVICS, INC. D1102/D1102B D1102 DU P-CHNN MTCHD MOSFT PIR GNR DSCRIPTION Th D1102 is a monolithic dual P-channl matchd transistor pair intndd for a road rang of analog applications. Ths nhancmntmod
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationAON6266E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant
More informationIXTK5N250 IXTX5N250 = 2500V = 5A < 8.8Ω. High Voltage Power MOSFET w/ Extended FBSOA. Advance Technical Information. R DS(on)
High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA Advance Technical Information IXTKN IXTXN S = V I D = A R DS(on)
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
More informationSOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary
More informationSPN01N60C3. Cool MOS Power Transistor V T jmax 650 V
SPNN6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances Improved transconductance
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationAO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor
Rev : Feb 3 Rev : Jan 4 AO467, AO467L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor General Description The AO467 uses advanced trench technology MOSFETs to provide excellen R DS(ON)
More informationN-Channel ENHANCEMENT MODE POWER MOSFET 0V
PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION
More information430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationPDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET
N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More information60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT2 (TO-26AB) Surface-Mounted
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationIXTF1N450 = 4500V. High Voltage Power MOSFET = 0.9A 80. R DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode.
High Voltage Power MOSFET (Electrically Isolated Tab) S = 4500V I D25 = 0.9A 80 R DS(on) N-Channel Enhancement Mode ISOPLUS i4-pak TM Symbol Test Conditions Maximum Ratings S T J = 25 C to 50 C 4500 V
More informationSSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description
Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum
More informationFeatures. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units
Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationLNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET V, 38 ma, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate Pb-Free Package is Available ESD Protected:V
More informationIXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
Preliminary Technical Information Linear L2 TM Power MOSFET with extended FBSOA IXTH3NL2 IXTQ3NL2 IXTT3NL2 S I D25 R DS(on) = V = 3A mω N-Channel Enhancement Mode Avalanche rated TO-7 Symbol Test Conditions
More informationOptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
More informationIXFH42N60P3. Polar3 TM HiperFET TM Power MOSFET. = 600V = 42A 185m. Preliminary Technical Information. R DS(on)
Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
More informationIXTN200N10L2 V DSS = 100V = 178A. Linear L2 TM Power MOSFET w/ Extended FBSOA. Advance Technical Information
Advance Technical Information Linear L2 TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTN2N1L2 S = V I D25 = 178A R DS(on) 11mΩ minibloc, SOT-227 E153432
More informationMMIX1F520N075T2 = 75V = 500A. 1.6m. TrenchT2 TM GigaMOS TM HiperFET TM Power MOSFET. (Electrically Isolated Tab)
TrenchT2 TM GigaMOS TM HiperFET TM Power MOSFET MMIXF52N75T2 V DSS = 75V I D25 = 5A R DS(on).6m (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol
More informationAO V Dual N-Channel MOSFET
AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationSI Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D35 Rev. 2 7 February 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Low gate charge Low
More informationSilicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D
Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V-7 650 V 25 mω 90 A Very high operating
More informationPMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.
Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More information