Undercut of Unaxis-ICP-Deposited-SiO 2, by Vapor HF Etch
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1 Undercut of Unxis-ICP-Deposited-SiO 2, y Vpor HF Etch Ojective: To study the undercut-etch-rte of high-density-plsm-cvd (HDPCVD)-grown SiO2 using the Vpor HF tool with the currently instlled recipes. Experimentl: 1) Solvent clen of 4 Si wfer with cetone [2 minutes in ultrsonic th (USB)] nd methnol (1 minute in USB), then, DI wter rinse, then, dipping the wfer into BHF to remove the ntive oxide for 1 minute, DI wter rinse nd nitrogen-gun low dry. 2) Depositing HDPCVD SiO2 onto the wfer surfce using Unxis ICP Deposition tool t 100 o C for 1000 seconds (15mT, 5/400W, SiH4/O2/He flow-rte=5.9/10/245 sccm). The film thickness nd refrctive index, mesured with the Ellipsometer, re 553.7nm nd 1.468, respectively. 3) Depositing n Aluminum lyer, s n etch msk, onto the SiO2 using E-em#4 Evportor: nominl thickness ws 500nm (0.3nm/s). 4) A photoresist trench pttern ws formed on the top of Aluminum lyer using MA-6 msk ligner nd AZ5214 resist (with imgereversl process). 5) Etching the Aluminum using Pnsonic ICP#1 tool with 0.7 P, 70/300 W, BCl3/Cl2 flow-rte=20/40 sccm, nd etch time=80 seconds. After the etching, stripping the remining resist using 1165 striper (t 80 o C on hot-plte for 2 hours), nd O2 plsm descum (300mT/200W for 7 minutes). 6) Etching the underneth SiO2 using Pnsonic ICP#2 tool with 0.5 P, 200/900 W, CHF3 flow-rte=40 sccm, nd time=120 seconds. 7) Cleving the wfer into smll pieces (~1X1 cm 2 ), then, king them on hot-plte t 220 o C for 10 minutes. 8) Etching smples using the Vpor HF (VHF) etch tool (SPTS Etch System) with the currently instlled stndrd recipes. 9) Cleving the smples nd tking SEMs to get the oth undercut profile nd undercut etch rte.
2 Tle 1 Recipes instlled in the VHF etch tool (SPTS Etch System). Recipe# Regultor Pressure (T) Gs (vpor) Flow-rte (sccm) N2 EtOH HF
3 Results: Figure 1 () nd (): Profile (the top nd the ottom lyer re Aluminum nd SiO2 one, respectively) fter Aluminum etch using Pnsonic ICP#1 with 0.7 P, 70/300 W, BCl3/Cl2 flow-rte=20/40 sccm, nd etch time=80 seconds.
4 Figure 2 () nd (): Profile (the top nd the ottom lyer re Aluminum nd SiO2 one, respectively) fter Aluminum etch (see Figure 1) nd SiO2 etch (using Pnsonic ICP#2 with 0.5 P, 200/900 W, CHF3 flow-rte=40 sccm, nd etch time=120 seconds).
5 Figure 3 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#1 with 8X300 s (8 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 13.6 m Averge Undercut= ( )/ m Undercut etch rte=0.75 m/40min=190 Å/min
6 Figure 4 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#1 with 16X300 s (16 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 14.7 m Averge Undercut= ( )/2 1.3 m Undercut etch rte=1.3 m/80min=163 Å/min
7 Figure 5 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#2 with 4X300 s (4 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 17.4 m Averge Undercut= ( )/ m Undercut etch rte=2.65 m/20min=1330 Å/min
8 Figure 6 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#2 with 8X300 s (8 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 20.3 m Averge Undercut= ( )/2 4.1 m Undercut etch rte=4.1 m/40min=1030 Å/min
9 Figure 7 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#2 with 12X300 s (12 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 23.4 m Averge Undercut= ( )/ m Undercut etch rte=5.65 m/60min=940 Å/min
10 Undercut ( m) Ning Co, Stff Engineer, Nnof L, UCSB Figure 8 SiO2 undercut vs. etch time using Recipe# SiO 2 Undercut vs Etch Time (Recipe#2) Etch Time (minute)
11 Figure 9 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#3 with 2X300 s (2 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 16.8 m Averge Undercut= ( )/ m Undercut etch rte=2.35 m/10min=2350 Å/min
12 Figure 10 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#3 with 4X300 s (4 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 21.9 m Averge Undercut= ( )/2 4.9 m Undercut etch rte=4.9 m/20min 2450 Å/min
13 Figure 11 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#3 with 6X300 s (6 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 25.1 m Averge Undercut= ( )/2 6.5 m Undercut etch rte=6.5 m/30min 2170 Å/min
14 Figure 12 (), (), nd (c): Dry etch profile of SiO2 using VHF tool nd Recipe#3 with 8X300 s (8 cycles nd 300 s for ech cycle). c Averge opening width (including the undercuts) = 32.7 m Averge Undercut= ( )/ m Undercut etch rte=10.3 m/40min 2580 Å/min
15 Undercut ( m) Ning Co, Stff Engineer, Nnof L, UCSB Figure 13 SiO2 undercut vs. etch time using Recipe#3. 12 SiO 2 Undercut vs Etch Time (Recipe#3) 10 y = x Etch Time (minute)
16 To Be Continued (see File#)
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