Storage Temperature Range V ISO Insulation Withstand Voltage (AC-RMS) 2.5 kv Mounting torque, M4 srew 1.3 N m

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1 PD 9650A FA57SA50LC Fuy Isoated Package Easy to Use and Parae Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Gate Charge Device Low Drain to Case Capacitance Low Interna Inductance G D S HEXFET Power MOSFET V DSS = 500V R DS(on) = 0.08Ω I D = 57A Description Third Generation HEXFETs from Internationa Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ow onresistance and costeffectiveness. The SOT227 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 500 watts. The ow therma resistance of the SOT227 contribute to its wide acceptance throughout the industry. SOT227 Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 57 I T C = 00 C Continuous Drain Current, V 0V 36 A I DM Pused Drain Current 228 P C = 25 C Power Dissipation 625 W Linear Derating Factor 5.0 W/ C V GS GatetoSource Votage ± 20 V E AS Singe Puse Avaanche Energy 725 mj I AR Avaanche Current 57 A E AR Repetitive Avaanche Energy 62.5 mj dv/dt Peak Diode Recovery dv/dt ƒ 3.0 V/ns T J Operating Junction and 55 to 50 C T STG Storage Temperature Range V ISO Insuation Withstand Votage (ACRMS) 2.5 kv Mounting torque, M4 srew.3 N m Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.20 R θcs CasetoSink, Fat, Greased Surface 0.05 C/W 2//99

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 500 V V GS = 0V, I D =.0mA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.62 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 0.08 Ω V GS = 0V, I D = 34A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 43 S V DS = 50V, I D = 34A I DSS DraintoSource Leakage Current 50 V µa DS = 500V, V GS = 0V 500 V DS = 400V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 200 V GS = 20V na GatetoSource Reverse Leakage 200 V GS = 20V Q g Tota Gate Charge I D = 57A Q gs GatetoSource Charge 5 77 nc V DS = 400V Q gd GatetoDrain ("Mier") Charge V GS = 0V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 32 V DD = 250V t r Rise Time 52 I D = 57A ns t d(off) TurnOff Deay Time 08 R G =2.0Ω (Interna) t f Fa Time 8 R D = 4.3Ω, See Fig. 0 L s Interna Source Inductance 5.0 nh Between ead, and center of die contact C iss Input Capacitance 0000 V GS = 0V C oss Output Capacitance 500 pf V DS = 25V C rss Reverse Transfer Capacitance 50 ƒ =.0MHz, See Fig. 5 SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 57 (Body Diode) showing the A I SM Pused Source Current integra reverse 228 (Body Diode) pn junction diode. V SD Diode Forward Votage.3 V T J = 25 C, I S = 57A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 57A Q rr Reverse Recovery Charge 5 23 µc di/dt = 00A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 446µH R G = 25Ω, I AS = 57A. (See Figure 2) ƒ I SD 57A, di/dt 200A/µs, V DD V (BR)DSS, T J 50 C Puse width 300µs; duty cyce 2%. 2

3 I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 50 C V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current (A) T = 50 J C T = 25 J C V DS= 50V 20µs PULSE WIDTH V GS, GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) 3.0 I D = 57A V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd Coss = Cds Cgd C iss C oss C rss V DS, DraintoSource Votage (V) V GS, GatetoSource Votage (V) I = D 57 A V DS = 400V V DS = 250V V DS = 00V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) 00 0 T J = 50 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Votage (V) I D, Drain Current (A) us 00us ms TC = 25 C 0ms TJ = 50 C Singe Puse V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 60.0 V DS R D I D, Drain Current (A) R G V GS 0V Puse Width µs Duty Factor 0. % D.U.T. Fig 0a. Switching Time Test Circuit V DD 0.0 V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase 5

6 R G V DS 20V tp Fig 2a. Uncamped Inductive Test Circuit tp L D.U.T I AS 0.0Ω 5V DRIVER V (BR)DSS V DD A E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM I D 25A 35A 57A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReAppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For NChanne HEXFETS 7

8 SOT227 Package Detais 4.40 (.73 ) 4.20 (.65 ) 2.50 (.492 ) 7.50 (.295 ) 2.0 (.082 ).90 (.075 ) (.508 ) (.488 ) (.02 ) (.992 ) B A (.89 ) (.73 ) 8.0 (.39 ) 4X 7.70 (.303 ) (.246 ) 5.00 (.590 ) C HAM FER 2.00 (.079 ) X 457 R FULL 0.25 (.00 ) M C A M B M 2.0 (.082 ).90 (.075 ) C 0.2 (.005 ) 4 E LEAD ASSIGMENTS C E G IGBT A K2 K A2 HEXFRED S D S G HEXFET (.484 ).80 (.464 ) Tube QUANTITY PER TUBE IS 0 M4 SREW AND WASHER INCLUDED WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CANADA: 5 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITALY: Via Liguria 49, 007 Borgaro, Torino Te: IR FAR EAST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: IR SOUTHEAST ASIA: Kim Seng Promenade, Great Word City West Tower, 3, Singapore Te: IR TAIWAN:6 F. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Te: Data and specifications subject to change without notice. 2/99 8

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize