IGBT PIM Module, 15 A

Transcription

1 IGBT PIM Module, 1 A GB1RF1K ECONO PIM PRODUCT SUMMARY V CES 1 V V CE(on) (typical). V t sc at T J = 1 C > 1 µs I C at T C = C 1 A FEATURES Low V CE(on) non punch through IGBT technology Low diode V F 1 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Positive V CE(on) temperature coefficient Ceramic DBC substrate Low stray inductance design Speed to khz Totally lead (Pb)free Designed and qualified for industrial market BENEFITS Benchmark efficiency for motor control Rugged transient performance Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Low junction to case thermal resistance UL approved E799 RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Inverter Input rectifier Brake Collector to emitter voltage V CES 1 Gate to emitter voltage V GES ± V T C = C Continuous collector current I C T C = C 1 A Pulsed collector current See fig. C.T. I CM A Diode maximum forward current I FM Pulsed A Power dissipation P D One IGBT C 1 W Repetitive peak reverse voltage V RRM 1 V Average output current I F(AV) / Hz sine pulse C 1 A Surge current (nonrepetitive) I FSM Rated VRRM applied, 1 ms, 1 I t (nonrepetitive) I t sine pulse 7 A s Collector to emitter voltage V CES 1 Gate to emitter voltage V GES ± V T C = C Continuous collector current I C T C = C 1 A Pulsed collector current See fig. C.T. I CM A Power dissipation P D One IGBT C 1 W Maximum operating junction temperature T J 1 Storage temperature range T Stg to 1 C Isolation voltage V ISOL AC (1 min) V Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 1

2 GB1RF1K IGBT PIM Module, 1 A ELECTRICAL SPECIFICATIONS (T J = C unless otherwise noted) Inverter IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage BV (CES) V GE = V, I C = µa 1 V ΔV (BR)CES /ΔT J V GE = V, I C = 1 ma ( C to 1 C) 1.1 V/ C I C = 1 A, V GE = 1 V. 3. Collector to emitter voltage V CE(on) I C = A, V GE = 1 V 3.. I C = 1 A, V GE = 1 V, T J = 1 C 3.3 I C = A, V GE = 1 V, T J = 1 C. Gate threshold voltage V GE(th) V CE = V GE, I C = µa... Threshold voltage temperature coefficient ΔV GE(th) /ΔT J V CE = V GE, I C = 1 ma ( C to 1 C) 11 mv/ C Zero gate voltage collector current I CES V GE = V, V CE = 1 V µa 37 T J = 1 C V GE = V, V CE = 1 V 1 Gate to emitter leakage current I GES V GE = ± V ± na Total gate charge (turnon) Q G IC = A 9 Gate to emitter charge (turnon) Q GE V CC = V 1 1 nc Gate to collector charge (turnon) Q GC V GE = 1 V 7 Turnon switching loss E on IC = 1 A, V CC = V Turnoff switching loss E off V GE = 1 V, R G = Ω, L = µh,.9 1. Total switching loss E tot T J = C (1). 3. Turnon switching loss E on IC = 1 A, V CC = V 1.7. mj Turnoff switching loss E off V GE = 1 V, R G = Ω, L = µh, Total switching loss E tot T J = 1 C (1).9.7 Turnon delay time t d(on) Rise time t r I C = 1 A, V CC = V 7 Turnoff delay time t d(off) V GE = 1 V, R G = Ω, L = µh, T J = 1 C 3 ns Fall time t f Input capacitance C ies VGE = V 1 Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f = 1 MHz 3 V Inverter IGBT Freewheeling Diode Reverse bias safe operating area Short circuit safe operating area RBSOA SCSOA T J = 1 C, I C = A R G = Ω, V GE = 1 V to T J = 1 C V CC = 9 V, V P = 1 V R G = Ω, V GE = 1 V to V Diode peak reverse recovery current I rr V CC = V, I F = A, L = µh T J = 1 C R G = Ω, V GE = 1 V Diode forward voltage drop V FM Fullsquare 1 µs A I F = 1 A.1. I F = A. 3. I F = 1 A, T J = 1 C.3 I F = A, T J = 1 C.9 V For technical questions, contact: indmodules@vishay.com Document Number: 937 Revision: 1Sep

3 IGBT PIM Module, 1 A GB1RF1K ELECTRICAL SPECIFICATIONS (T J = C unless otherwise noted) Input Rectifier Brake IGBT Brake IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum forward voltage drop V FM I F = 1 A 1.3 V Maximum reverse leakage current I RM ma T J = C, V R = 1 V. T J = 1 C, V R = 1 V 1. Forward slope resistance r T 1. mω T J = 1 C Conduction thresold voltage V F (TO).77 Collector to emitter breakdown V BV (CES) V GE = V, I C = µa 1 voltage Temperature coefficient of breakdown voltage Collector to emitter voltage ΔV (BR)CES /ΔT J V CE(on) V GE = V, I C = 1 ma ( C to 1 C) 1.1 V/ C I C = 1 A, V GE = 1 V. 3. I C = A, V GE = 1 V 3.. I C = 1 A, V GE = 1 V, T J = 1 C 3.3 I C = A, V GE = 1 V, T J = 1 C. Gate threshold voltage V GE(th) V CE = V GE, I C = µa... Threshold voltage temperature coefficient ΔV GE(th) /ΔT J V CE = V GE, I C = 1 ma ( C to 1 C) 11 mv/ C Zero gate voltage collector current I CES V GE = V, V CE = 1 V µa 37 T J = 1 C V GE = V, V CE = 1 V 1 Gate to emitter leakage current I GES V GE = ± V ± na Total gate charge (turnon) Q G I C = A 9 Gate to emitter charge (turnon) Q GE V CC = V 1 1 Gate to collector charge (turnon) Q GC V GE = 1 V 7 Turnon switching loss E on IC = 1 A, V CC = V Turnoff switching loss E off V GE = 1 V, R G = Ω, L = µh,.9 1. Total switching loss E tot T J = C (1). 3. Turnon switching loss E on IC = 1 A, V CC = V 1.7. Turnoff switching loss E off V GE = 1 V, R G = Ω, L = µh, Total switching loss E tot T J = 1 C (1).9.7 Turnon delay time t d(on) Rise time Turnoff delay time t r t d(off) I C = 1 A, V CC = V V GE = 1 V, R G = Ω, L = µh, T J = 1 C 3 7 Fall time t f Input capacitance C ies V GE = V 1 Output capacitance C oes V CC = 3 V Reverse transfer capacitance C res f = 1 MHz 3 Reverse bias safe operating area RBSOA T J = 1 C, I C = A R G = Ω, V GE = 1 V to V Fullsquare V nc mj ns pf Short circuit safe operating area SCSOA T J = 1 C V CC = 9 V, V P = 1 V R G = Ω, V GE = 1 V to V 1 µs Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 3

4 GB1RF1K IGBT PIM Module, 1 A ELECTRICAL SPECIFICATIONS (T J = C unless otherwise noted) Brake Diode NTC PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Diode peak reverse recovery current I rr V CC = V, I F = A, L = µh T J = 1 C R G = Ω, V GE = 1 V Diode forward voltage drop Note (1) Energy losses include tail and diode reverse recovery V FM A I F = 1 A.1. I F = A. 3. I F = 1 A, T J = 1 C.3 I F = A, T J = 1 C.9 T J = C 3 9 Resistance R Ω T J = 1 C B value B T J = C/ C K V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction to case inverter IGBT thermal resistance 1. Junction to case inverter FRED thermal resistance 1. Junction to case brake DIODE thermal resistance R thjc 1. Junction to case brake IGBT thermal resistance 1. C/W Junction to case input rectifier thermal resistance 1. Case to sink, flat, greased surface R thcs. Mounting torque (M) Nm Weight 17 g For technical questions, contact: indmodules@vishay.com Document Number: 937 Revision: 1Sep

5 I CE (A) I CE (A) I CE (A) Capacitance (pf) IGBT PIM Module, 1 A GB1RF1K INVERTER 3 3 V GE = 1V VGE = 1V VGE = 1V VGE = 1V VGE =.V I CE = 7.A I CE = 1A I CE = 3A Fig. 1 Typical IGBT Output Characteristics T J = C; t p = µs Fig. Typical V CE vs. V GE T J = C 3 3 V GE = 1V VGE = 1V VGE = 1V VGE = 1V VGE =.V I CE = 7.A I CE = 1A I CE = 3A Fig. Typical IGBT Output Characteristics T J = 1 C, t p = µs Fig. Typical V CE vs. V GE T J = 1 C T J = C T J = 1 C 1 Cies 1 Coes 1 Cres Fig. 3 Typical Transfer Characteristics V CE = V; t p = 1 µs Fig. Typical Capacitance vs. V CE V GE = V; f = 1 MHz Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep

6 Swiching Time (ns) I F (A) Energy (µj) Swiching Time (ns) GB1RF1K IGBT PIM Module, 1 A V V td OFF 1 t F 1 t R td ON 1 Q G, Total Gate Charge (nc) I C (A) Fig. 7 Typical Gate Charge vs. V GE I CE = 1 A; L = 1. mh Fig. 1 Typical Switching Time vs. I C T J = 1 C; L = µh; V CE = V; R G = Ω; V GE = 1 V C 1 C E ON E OFF V F (V) 1 3 R G (Ω) Fig. Typical Diode Forward Characteristics t p = µs Fig. 11 Typical Energy Loss vs. R G T J = 1 C; L = µh; V CE = V; I CE = 1 A; V GE = 1 V E ON t F Energy (µj) E OFF 1 td OFF 1 td ON 1 t R 1 3 I C (A) R G (Ω) Fig. 9 Typical Energy Loss vs. I C T J = 1 C; L = µh; V CE = V; R G = Ω; V GE = 1 V Fig. 1 Typical Switching Time vs. R G T J = 1 C; L = µh; V CE = V; I CE = 1 A; V GE = 1 V For technical questions, contact: indmodules@vishay.com Document Number: 937 Revision: 1Sep

7 Thermistor Resistance ( kω) Instantaneous Forward Current I F ( A ) I RR (A) I RR (A) I RR (A) IGBT PIM Module, 1 A GB1RF1K INVERTER 3 R G =.7Ω 3 3 R G = 1 Ω R G = Ω 1 1 R G = 7 Ω I F (A) 1 3 R G (Ω) Fig. 13 Typical Diode I RR vs. I F T J = 1 C Fig. Typical Diode I RR vs. R G T J = 1 C; I F = 1 A di F /dt (A/µs) Fig. 1 Typical Diode I RR vs. di F /dt V CC = V; V GE = 1 V; I CE = 1 A; T J = 1 C THERMISTOR INPUT RECTIFIER T J = 1 C T J = C T J, Junction Temperature ( C) Forward Voltage Drop V F ( V ) Fig. 1 Thermistor Resistance vs. Temperature Fig. 17 Typical Diode Forward Characteristics t p = µs Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 7

8 Thermal Response ( Z thjc ) GB1RF1K IGBT PIM Module, 1 A INVERTER 1 Thermal Response ( Z thjc ) 1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R R R 3 R 3 τ 1 τ 1 τ τ τ 3 τ 3 Ci= τi/ri Ci i/ri R Ri ( C/W) τi (sec) R.7.31 τ τ τ C τ Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E 1E 1E 1E3 1E 1E1 1E+ t, Rectangular Pulse Duration (sec) Fig. 1 Maximum Transient Thermal Impedance, Junction to Case (Inverter IGBT) 1 1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R R 3 R 1 R R 3 τ 1 τ 1 τ τ τ 3 τ 3 Ci= τi/ri Ci= i/ri τ C τ Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E 1E 1E 1E3 1E 1E1 1E+ t 1, Rectangular Pulse Duration (sec) Fig. 19 Maximum Transient Thermal Impedance, Junction to Case (Inverter FRED) 9 7 tf 9% I CE tr TEST CURRENT 3 3 VCE (V) 3 1 ICE (A) VCE (V) 3 9% test current 1 ICE (A) % V CE 1% test current 1 1 % I CE 1 % V CE Eoff Loss Time(µs) Fig. WF1 Typical TurnOff Loss Waveform at T J = 1 C using Fig. C.T. Eon Loss Time (µs) Fig. WF Typical TurnOn Loss Waveform at T J = 1 C using Fig. C.T. For technical questions, contact: indmodules@vishay.com Document Number: 937 Revision: 1Sep

9 I CE (A) Capacitance (pf) I CE (A) I CE (A) IGBT PIM Module, 1 A GB1RF1K BRAKE 3 3 V GE = 1V VGE = 1V VGE = 1V VGE = 1V VGE =.V I CE = 7.A I CE = 1A I CE = 3A Fig. Typical IGBT Output Characteristics T J = C; t p = µs Fig. 3 Typical V CE vs. V GE T J = C 3 3 V GE = 1V VGE = 1V VGE = 1V VGE = 1V VGE =.V I CE = 7.A I CE = 1A I CE = 3A Fig. 1 Typical IGBT Output Characteristics T J = 1 C; t p = µs Fig. Typical V CE vs. V GE T J = 1 C T J = C T J = 1 C 1 Cies 1 Coes 1 Cres Fig. Typical Transfer Characteristics V CE = V; t p = 1 µs Fig. Typical Capacitance vs. V CE V GE = V; f = 1 MHz Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 9

10 Swiching Time (ns) I F (A) Energy (µj) Swiching Time (ns) GB1RF1K IGBT PIM Module, 1 A V V td OFF 1 t F 1 t R td ON 1 Q G, Total Gate Charge (nc) I C (A) Fig. Typical Gate Charge vs. V GE I CE = 1 A; L = 1. mh Fig. 9 Typical Switching Time vs. I C T J = 1 C; L = µh; V CE = V; R G = Ω; V GE = 1 V C 1 C V F (V) Fig. 7 Typical Diode Forward Characteristics t p = µs R G (Ω) E ON E OFF Fig. 3 Typical Energy Loss vs. R G T J = 1 C; L = µh; V CE = V; I CE = 1 A; V GE = 1 V E ON t F Energy (µj) E OFF 1 td OFF 1 td ON 1 t R 1 3 I C (A) R G (Ω) Fig. Typical Energy Loss vs. I C T J = 1 C; L = µh; V CE = V; R G = Ω; V GE = 1 V Fig. 31 Typical Switching Time vs. R G T J = 1 C; L = µh; V CE = V; I CE = 1 A; V GE = 1 V For technical questions, contact: indmodules@vishay.com Document Number: Revision: 1Sep

11 I RR (A) I RR (A) I RR (A) IGBT PIM Module, 1 A GB1RF1K 3 R G =.7Ω 3 3 R G = 1 Ω R G = Ω 1 1 R G = 7 Ω I F (A) R G (Ω) Fig. 3 Typical Diode I RR vs. I F T J = 1 C Fig. 33 Typical Diode I RR vs. R G T J = 1 C; I F = 1 A di F /dt (A/µs) Fig. 3 Typical Diode I RR vs. di F /dt V CC = V; V GE = 1 V; I CE = 1 A; T J = 1 C Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 11

12 Thermal Response ( Z thjc ) GB1RF1K IGBT PIM Module, 1 A 1 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R R 3 R 1 R R 3 τ 1 τ τ τ 3 1 τ τ 3 Ci= τi/ri Ci i/ri R Ri ( C/W) τi (sec) R.7.31 τ τ τ C τ Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E 1E 1E 1E3 1E 1E1 1E+ t 1, Rectangular Pulse Duration (sec) Fig. 3 Maximum Transient Thermal Impedance, Junction to Case (Brake IGBT) 1 1 D = SINGLE PULSE ( THERMAL RESPONSE ) R 1 R R 3 R 1 R R 3 τ 1 τ 1 τ τ τ 3 τ 3 Ci= τi/ri Ci= i/ri τ C τ Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t. Peak Tj = P dm x Zthjc + Tc.1 1E 1E 1E 1E3 1E 1E1 1E+ t 1, Rectangular Pulse Duration (sec) Fig. 3 Maximum Transient Thermal Impedance, Junction to Case (Brake Diode) 9 7 tf 9% I CE tr TEST CURRENT 3 3 VCE (V) 3 1 ICE (A) VCE (V) 3 9% test current 1 ICE (A) % V CE 1% test current 1 1 % I CE 1 % V CE Eoff Loss Time(µs) Fig. WF3 Typical TurnOff Loss Waveform at T J = 1 C using Fig. C.T. Eon Loss Time (µs) Fig. WF Typical TurnOn Loss Waveform at T J = 1 C using Fig. C.T. For technical questions, contact: indmodules@vishay.com Document Number: Revision: 1Sep

13 IGBT PIM Module, 1 A GB1RF1K Driver L 1K D.U.T. + V CC D C D.U.T + 9 V Fig. C.T.1 Gate Charge Circuit (TurnOff) Fig. C.T.3 S.C. SOA Circuit L Diode clamp/ D.U.T. L V + R g D.U.T 1 V + V R g D.U.T./ driver + V CC Fig. C.T. RBSOA Circuit Fig. C.T. Switching Loss Circuit R = V CC I CM D.U.T. + V CC R g Fig. C.T. Resistive Load Circuit Document Number: 937 For technical questions, contact: indmodules@vishay.com Revision: 1Sep 13

14 GB1RF1K IGBT PIM Module, 1 A ORDERING INFORMATION TABLE Device code G B 1 R F 1 K Insulated Gate Bipolar Transistor (IGBT) IGBT Generation NPT 3 Current rating (1 = 1 A) Circuit configuration (R = Three phase bridgebrakeinverter with thermistor) Package (F = ECONO) Voltage rating (1 = 1 V) 7 Ultrafast (Speed to khz) CIRCUIT CONFIGURATION 7 P1D PD P3D CHD 39 PU 3 PV 33 PW N1D ND N3D 3 CHT 3 NU NV 7 NW R 3 Dimensions Part marking information LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com Document Number: 937 Revision: 1Sep

15 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91 Revision: 1Jul 1