FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode
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1 FFSP753Z Integrated P-hannel PowerTrench MOSFET and Schottky iode -30V, -3, 5mΩ Features Max r S(on) = 5mΩ at V GS = -0V, I = -3.0 Max r S(on) = 0mΩ at V GS = -.5V, I = -.5 V F < V F < Schottky and MOSFET incorporated into single power surface mount SO- package Electrically independent Schottky and MOSFET pinout for design flexibility RoHS ompliant SO- General escription November 006 The FFSP753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- package. This device is designed specifically as a single package solution for to converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of / converter topologies. pplication MOSFET Maximum Ratings T = 5 unless otherwise noted Thermal haracteristics Pin S G - onversion Symbol Parameter Ratings Units V S rain to Source Voltage -30 V V GS Gate to Source Voltage ±5 V rain urrent -ontinuous (Note a) -3 I -Pulsed -6 P Power issipation (Note a).6 W E S Single Pulse valanche Energy (Note ) 6 mj V RRM Schotty Repetitive Peak Reverse Voltage -0 V I O Schotty verage Forward urrent (Note a) - T J, T STG Operating and Storage Junction Temperature Range -55 to G S tm R θj Thermal Resistance, Junction to mbient (Note a) 7 R θj Thermal Resistance, Junction to ase (Note ) 0 Package Marking and Ordering Information /W evice Marking evice Package Reel Size Tape Width Quantity FFSP753Z FFSP753Z SO- 330mm mm 500 units 006 Fairchild Semiconductor orporation
2 Electrical haracteristics T J = 5 unless otherwise noted Symbol Parameter Test onditions Min Typ Max Units Off haracteristics BV SS rain to Source Breakdown Voltage I = -50µ, V GS = 0V -30 V BV SS T J I SS Breakdown Voltage Temperature oefficient Zero Gate Voltage rain urrent I = -50µ, referenced to 5 - mv/ V S = -V, - V GS = 0V T J = 5-00 I GSS Gate to Source Leakage urrent V GS = ±5V, V S = 0V ±0 µ On haracteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = -50µ V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature oefficient rain to Source On-Resistance I = -50µ, referenced to 5 5 mv/ V GS = -0V, I = V GS = -.5V, I = V GS = -0V, I = -3.0, T J = g FS Forward Transconductance V S = -5V, I = S ynamic haracteristics iss Input apacitance pf V S = -0V, V GS = 0V, oss Output apacitance 0 0 pf f = MHz rss Reverse Transfer apacitance pf R g Gate Resistance f = MHz Ω Switching haracteristics t d(on) Turn-On elay Time 7 ns t V = -0V, I = -3.0 r Rise Time 3 50 ns V GS = -0V, R GEN = 6Ω t d(off) Turn-Off elay Time 33 ns t f Fall Time 0 35 ns Q g(tot) Total Gate harge at -0V V GS = 0V to -0V n Q V = -0V g(.5) Total Gate harge at -.5V V GS = 0V to -.5V n I = -3.0 Q gs Gate to Source Gate harge.3 n Q gd Gate to rain Miller harge.6 n rain-source iode haracteristics V S Source to rain iode Forward Voltage V GS = 0V, I S = -.0 (Note 3) V t rr Reverse Recovery Time 0 30 ns I F = -3.0, di/dt = 00/µs Q rr Reverse Recovery harge n Schottky iode haracteristics I R Reverse Leakage V R = -0V V F Forward Voltage I F = I F = µ mω T J = 5-90 µ T J = 5-66 m T J = T J = T J = T J = V
3 Notes: : R θj is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θj is guaranteed by design while R θ is determined by the user s board design. a) 7 /W when mounted on a 0.5in pad of oz copper : Starting, L = 3mH, I S =, V = 7V, V GS = 0V 3: Pulse Test: Pulse Width < 300µs, uty cycle <.0%. b) 35 /W when mounted on a minimun pad 3
4 Typical haracteristics T J = 5 unless otherwise noted -I, RIN URRENT () NORMLIZE RIN TO SOURE ON-RESISTNE -I, RIN URRENT () 6 V GS = -0V V GS = -3.5V Figure PULSE URTION = 0µs UTY YLE = 0.5%MX V GS = -5V V GS = -.5V V GS = -V -VS, RIN TO SOURE VOLTGE (V) NORMLIZE RIN TO SOURE ON-RESISTNE.0 V GS = -0V I, RIN URRENT() On Region haracteristics Figure. Normalized On-Resistance vs rain urrent and Gate Voltage T J, JUNTION TEMPERTURE ( o ) Figure 3. Normalized On-Resistance vs Junction Temperature 6 I = -3 V GS = -0V PULSE URTION = 0µs UTY YLE = 0.5%MX T J = 50 o T J = -55 o V GS, GTE TO SOURE VOLTGE (V) rs(on), RIN TO -IS, REVERSE RIN URRENT () SOURE ON-RESISTNE (mω) V GS = 3.5V Figure. I = -3 V GS = V T J = 50 o PULSE URTION = 0µs UTY YLE = 0.5%MX V GS = -.5V V GS = -5V PULSE URTION = 0µs UTY YLE = 0.5%MX V GS, GTE TO SOURE VOLTGE (V) V GS = 0V On-Resistance vs Gate to Source Voltage T J = 50 o T J = -55 o E V S, BOY IOE FORWR VOLTGE (V) Figure 5. Transfer haracteristics Figure 6. Source to rain iode Forward Voltage vs Source urrent
5 Typical haracteristics T J = 5 unless otherwise noted -VGS, GTE TO SOURE VOLTGE(V) -IS, VLNHE URRENT() -I, RIN URRENT () Q g, GTE HRGE(n) Figure 7. 3 V = -5V V = -5V V = -0V V S, RIN TO SOURE VOLTGE (V) Gate harge haracteristics Figure. apacitance vs rain to Source Voltage t V, TIME IN VLNHE(ms) Figure 9. Unclamped Inductive Switching apability 00ms OPERTION IN THIS 0. s RE MY BE LIMITE BY r SINGLE PULSE 0s S(on) TJ = MX RTE T = 5 O VS, RIN to SOURE VOLTGE (V) Figure. Forward Bias Safe Operating rea 00us ms 0ms PITNE (pf) -I, RIN URRENT () P(PK), PEK TRNSIENT POWER (W) f = MHz V GS = 0V R θj = 7 o /W V GS = -0V V GS = -.5V iss oss rss T, MBIENT TEMPERTURE ( o ) Figure 0. Maximum ontinuous rain urrent vs ase Temperature V GS = -0V 0 FOR TEMPERTURES BOVE 5 o ERTE PEK URRENT S FOLLOWS: 50 T I = I SINGLE PULSE t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation T = 5 o 30 5
6 Typical haracteristics T J = 5 unless otherwise noted I F, REVERSE LEKGE URRENT () E Figure 3. NORMLIZE THERML IMPENE, Z θj V F, REVERSE VOLTGE (V) 0.0 Schottky iode Forward Voltage Figure. UTY YLE-ESENING ORER = I R, REVERSE LEKGE URRENT (m) 0 0. t, RETNGULR PULSE URTION (s) Figure 5. Transient Thermal Response urve E V R, REVERSE VOLTGE (V) Schottky iode Reverse urrent t t NOTES: UTY FTOR: = t /t 0.0 SINGLE PULSE PEK T J = P M x Z θj x R θj + T P M 6
7 TREMRKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Ex ctiverray Bottomless Build it Now oolfet ROSSVOLT OME EcoSPRK E MOS EnSigna FT FST FSTr FPS FRFET cross the board. round the world. The Power Franchise Programmable ctive roop FT Quiet Series GlobalOptoisolator GTO HiSe I i-lo Impliedisconnect IntelliMX ISOPLNR LittleFET MIROOUPLER MicroFET MicroPak MIROWIRE MSX MSXPro OX OXPro OPTOLOGI OPTOPLNR PMN POP Power7 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series Rapidonfigure Rapidonnect µseres ScalarPump ISLIMER FIRHIL SEMIONUTOR RESERVES THE RIGHT TO MKE HNGES WITHOUT FURTHER NOTIE TO NY PROUTS HEREIN TO IMPROVE RELIBILITY, FUNTION OR ESIGN. FIRHIL OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLITION OR USE OF NY PROUT OR IRUIT ESRIBE HEREIN; NEITHER OES IT ONVEY NY LIENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPEIFITIONS O NOT EXPN THE TERMS OF FIRHIL S WORLWIE TERMS N ONITIONS, SPEIFILLY THE WRRNTY THEREIN, WHIH OVERS THESE PROUTS. LIFE SUPPORT POLIY FIRHIL S PROUTS RE NOT UTHORIZE FOR USE S RITIL OMPONENTS IN LIFE SUPPORT EVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN PPROVL OF FIRHIL SEMIONUTOR ORPORTION. s used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. SILENT SWITHER SMRT STRT SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT - SyncFET TM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UH UniFET UltraFET VX Wire. critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PROUT STTUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition dvance Information Formative or In This datasheet contains the design specifications for esign product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I0 FFSP753Z Rev. 7
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FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
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P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
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P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V
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More informationApplications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V
FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
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YYWW Product Summary BV SS 3V R S(ON) Max.mΩ @ V GS = V.mΩ @ V GS = 4.V escription and Applications I Max T C = + C 7A A This MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain
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FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
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YM N-CHANNEL ENHANCEMENT MOE FIEL EFFECT TRANSISTOR Product Summary BV SS R S(ON) Max I Max T A = + C V 7.Ω @ V GS = V ma escription and Applications This MOSFET has been designed to minimize the on-state
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Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
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NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
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Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
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YM AVANCE INFORMATION Product Summary BV SS -12V R S(ON) Max I Max T C = +25 C 8.5mΩ @ -26A 12mΩ @ V GS = -2.5V -22A P-CHANNEL ENHANCEMENT MOE MOSFET Features and Benefits.6mm Profile Ideal for Low Profile
More informationApplications. Bottom S S S. Pin 1 G D D D
FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency
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P6P Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp POWER MOSFET Simple Drive Requirement D BV DSS V Ultra-low On-resistance R DS(ON) 37mΩ 3 Fast Switching Characteristic I
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SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
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SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
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