Surface Mount RF Schottky Barrier Diodes. Technical Data. HSMS-280x Series

Transcription

1 Surface Mount R Schottky Barrier Diodes Technical Data HSMS-280x Series eatures Surface Mount ackages High Breakdown Voltage Low IT (ailure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad Versions Tape and Reel Options Available Lead-free Option Available * or more information see the Surface Mount Schottky Reliability Data Sheet. Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. ackage Lead Code Identification, SOT-2/SOT-4 (Top View) SINGL 2 #0 UNCONNCTD AIR 4 2 #5 SRIS 2 #2 RING QUAD 4 2 #7 ackage Lead Code Identification, SOT-2 (Top View) SINGL B ANOD SRIS C CATHOD ANOD 2 # BRIDG QUAD 4 2 #8 CATHOD 2 #4 ackage Lead Code Identification, SOT-6 (Top View) HIGH ISOLATION UNCONNCTD AIR 2 K CATHOD QUAD UNCONNCTD TRIO 2 L ANOD QUAD Note that Agilent s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. 2 M BRIDG QUAD 2 N RING QUAD 2 2 R

2 2 in Connections and ackage Marking, SOT-6 2 GUx Notes:. ackage marking provides orientation and identification. 2. See lectrical Specifications for appropriate package marking. SD WARNING: Handling recautions Should Be Taken To Avoid Static Discharge. Absolute Maximum Ratings [] T C = 25 C Symbol arameter Unit SOT-2/SOT-4 SOT-2/SOT-6 I f orward Current ( µs ulse) Amp IV eak Inverse Voltage V Same as V BR Same as V BR T j Junction Temperature C T stg Storage Temperature C -65 to to 50 θ jc Thermal Resistance [2] C/W Notes:. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T C = +25 C, where T C is defined to be the temperature at the package pins where contact is made to the circuit board. lectrical Specifications T A = 25 C, Single Diode [4] Maximum Maximum Minimum Maximum orward Reverse Typical art ackage Breakdown orward Voltage Leakage Maximum Dynamic Number Marking Lead Voltage Voltage V I R Capacitance Resistance HSMS [5] Code Code Configuration V BR (V) V (mv) I (ma) V R (V) C T (p) R D (Ω) [6] 2800 A0 [] 0 Single A2 [] 2 Series 280 A [] Common Anode 2804 A4 [] 4 Common Cathode 2805 A5 [] 5 Unconnected air 2807 A7 [] 7 Ring Quad [5] 2808 A8 [] 8 Bridge Quad [5] 280B A0 [7] B Single 280C A2 [7] C Series 280 A [7] Common Anode 280 A4 [7] Common Cathode 280K AK [7] K High Isolation Unconnected air 280L AL [7] L Unconnected Trio 280M H [7] M Common Cathode Quad 280N N [7] N Common Anode Quad 280 A [7] Bridge Quad 280R O [7] R Ring Quad Test Conditions I R = 0 µa I = ma V = 0 V I = 5 ma f = MHz Notes:. V for diodes in pairs and quads in 5 mv maximum at ma. 2. C TO for diodes in pairs and quads is 0.2 p maximum.. ackage marking code is in white. 4. ffective Carrier Lifetime (τ) for all these diodes is 00 ps maximum measured with Krakauer method at 5 ma. 5. See section titled Quad Capacitance. 6. R D = R S Ω at 25 C and I f = 5 ma. 7. ackage marking code is laser marked.

3 Quad Capacitance Capacitance of Schottky diode quads is measured using an H427 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mv R.M.S. voltage at MHz. Agilent defines this measurement as CM, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C x C 2 C x C 4 CDIAGONAL = + C + C 2 C + C 4 C C C C 2 C 4 A B The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula C ADJACNT = C C 2 C C 4 This information does not apply to cross-over quad diodes. Linear quivalent Circuit, Diode Chip R j = R S 8. X 0-5 nt I b + I s R j C j R S = series resistance (see Table of SIC parameters) C j = junction capacitance (see Table of SIC parameters) where I b = externally applied bias current in amps I s = saturation current (see table of SIC parameters) T = temperature, K n = ideality factor (see table of SIC parameters) Note: To effectively model the packaged HSMS-280x product, please refer to Application Note AN24. SIC arameters arameter Units HSMS-280x B V V 75 C J0 p.6 G ev 0.69 I BV A -5 I S A -8 N.08 R S Ω 0 B V 0.65 T 2 M 0.5

4 4 Typical erformance, T C = 25 C (unless otherwise noted), Single Diode I ORWARD CURRNT (ma) T A = +25 C T A = +75 C T A = +25 C T A = 25 C V ORWARD VOLTAG (V) igure. orward Current vs. orward Voltage at Temperatures. 00,000 I R RVRS CURRNT (na) 0, T A = +25 C T A = +75 C T A = +25 C V R RVRS VOLTAG (V) igure 2. Reverse Current vs. Reverse Voltage at Temperatures. R D DYNAMIC RSISTANC (Ω) I ORWARD CURRNT (ma) igure. Dynamic Resistance vs. orward Current. C T CAACITANC (p) V R RVRS VOLTAG (V) igure 4. Total Capacitance vs. Reverse Voltage. I - ORWARD CURRNT (ma) 0 0 I (Left Scale) V (Right Scale) V - ORWARD VOLTAG (V) igure 5. Typical V f Match, airs and Quads. 0 0 V - ORWARD VOLTAG DIRNC (mv)

5 5 Applications Information Introduction roduct Selection Agilent s family of Schottky products provides unique solutions to many design problems. The first step in choosing the right product is to select the diode type. All of the products in the HSMS-280x family use the same diode chip, and the same is true of the HSMS-28x and HSMS-282x families. ach family has a different set of characteristics which can be compared most easily by consulting the SIC parameters in Table. A review of these data shows that the HSMS-280x family has the highest breakdown voltage, but at the expense of a high value of series resistance (Rs). In applications which do not require high voltage the HSMS-282x family, with a lower value of series resistance, will offer higher current carrying capacity and better performance. The HSMS- 28x family is a hybrid Schottky (as is the HSMS-280x), offering lower /f or flicker noise than the HSMS-282x family. In general, the HSMS-282x family should be the designer s first choice, with the -280x family reserved for high voltage applications and the HSMS-28x family for low flicker noise applications. Assembly Instructions SOT-2 CB ootprint A recommended CB pad layout for the miniature SOT-2 (SC-70) package is shown in igure 6 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance igure 6. CB ad Layout (dimensions in inches) Assembly Instructions SOT-6 CB ootprint A recommended CB pad layout for the miniature SOT-6 (SC-70, 6 lead) package is shown in igure 7 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance Table. Typical SIC arameters. arameter Units HSMS-280x HSMS-28x HSMS-282x B V V C J0 p G ev I BV A I S A N R S Ω B (V J ) V T (XTI) M igure 7. CB ad Layout (dimensions in inches)

6 6 SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT package, will reach solder reflow temperatures faster than those with a greater mass. Agilent s SOT diodes have been qualified to the time-temperature profile shown in igure 8. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 25 C. These parameters are typical for a surface mount assembly process for Agilent diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder T MAX TMRATUR ( C) reheat Zone Reflow Zone Cool Down Zone TIM (seconds) igure 8. Surface Mount Assembly rofile.

7 7 art Number Ordering Information No. of art Number Devices Container HSMS-280x-TR2* 0000 " Reel HSMS-280x-TR* 000 7" Reel HSMS-280x-BLK * 00 antistatic bag x = 0, 2,, 4, 5, 7, 8, B, C,,, K, L, M, N,, R or lead-free option, the part number will have the character "G" at the end, eg. HSMS-280x-TR2G for a 0,000 lead-free reel. ackage Dimensions Outline 2 (SOT-2) Outline SOT-2 (SC-70 Lead).02 (0.040) 0.89 (0.05) 0.54 (0.02) 0.7 (0.05) DAT COD (X) ACKAG MARKING COD (XX).0 (0.05) R. DAT COD (X) ACKAG MARKING COD (XX) X X X.40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 2.20 (0.087) 2.00 (0.079) X X X.5 (0.05).5 (0.045) 0.60 (0.024) 0.45 (0.08) (0.080).78 (0.070) TO VIW.06 (0.20) 2.80 (0.0) 0.52 (0.006) (0.00) 0.0 (0.004) 0.00 (0.00) 2.20 (0.087).80 (0.07) BSC (0.025) 0.0 R (0.07) TY. 0.0 (0.004) 0.0 (0.0005) SID VIW.02 (0.04) 0.85 (0.0) 0.69 (0.027) 0.45 (0.08) ND VIW 0.25 (0.00) 0.5 (0.006).00 (0.09) 0.80 (0.0) 0 DIMNSIONS AR IN MILLIMTRS (INCHS) 0.0 (0.02) 0.0 (0.004) 0.20 (0.008) 0.0 (0.004) DIMNSIONS AR IN MILLIMTRS (INCHS) Outline 4 (SOT-4) Outline SOT-6 (SC-70 6 Lead) 0.92 (0.06) 0.78 (0.0) DAT COD (X) ACKAG MARKING COD (XX).0 (0.05) R. DAT COD (X) ACKAG MARKING COD (XX) 2 X X X.40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 2.20 (0.087) 2.00 (0.079) X X X.5 (0.05).5 (0.045) (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) 0.54 (0.02) 0.7 (0.05) 2.20 (0.087).80 (0.07) BSC (0.025) (0.07) TY..06 (0.20) 2.80 (0.0) 0.5 (0.006) 0.09 (0.00) 0.0 (0.004) 0.00 (0.00) 0.0 R..04 (0.04) 0.85 (0.0) 0.0 (0.004) 0.0 (0.0005) DIMNSIONS AR IN MILLIMTRS (INCHS) 0.69 (0.027) 0.45 (0.08) 0.25 (0.00) 0.5 (0.006).00 (0.09) 0.80 (0.0) (0.02) 0.0 (0.004) 0.20 (0.008) 0.0 (0.004) DIMNSIONS AR IN MILLIMTRS (INCHS)

8 8 Device Orientation RL or Outlines SOT-2, -2 TO VIW 4 mm ND VIW CARRIR TA 8 mm ABC ABC ABC ABC USR D DIRCTION COVR TA Note: "AB" represents package marking code. "C" represents date code. or Outline SOT-4 or Outline SOT-6 TO VIW 4 mm ND VIW TO VIW 4 mm ND VIW 8 mm ABC ABC ABC ABC 8 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" represents date code. Note: "AB" represents package marking code. "C" represents date code.

9 9 Tape Dimensions and roduct Orientation or Outline SOT-2 D 2 0 W t D 9 MAX Ko 8 MAX.5 MAX CAVITY RORATION CARRIR TA DSCRITION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DTH ITCH BOTTOM HOL DIAMTR DIAMTR ITCH OSITION THICKNSS K 0 D D 0 W t.5 ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± DISTANC BTWN CNTRLIN CAVITY TO RORATION ( DIRCTION) CAVITY TO RORATION (LNGTH DIRCTION) 2.50 ± ± ± ± or Outline SOT-4 0 D 2 W D t 9 MAX K 0 9 MAX CAVITY RORATION DSCRITION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DTH ITCH BOTTOM HOL DIAMTR DIAMTR ITCH OSITION K 0 D D 0.9 ± ± 0.0. ± ± ± ± ± ± ± ± ± ± CARRIR TA THICKNSS W t ± ± DISTANC CAVITY TO RORATION ( DIRCTION) CAVITY TO RORATION (LNGTH DIRCTION) 2.50 ± ± ± ± 0.002

10 Tape Dimensions and roduct Orientation or Outlines SOT-2, -6 D 2 0 C W t (CARRIR TA THICKNSS) D T t (COVR TA THICKNSS) An K 0 An CAVITY RORATION CARRIR TA COVR TA DISTANC ANGL DSCRITION SYMBOL SIZ (mm) SIZ (INCHS) LNGTH DTH ITCH BOTTOM HOL DIAMTR DIAMTR ITCH OSITION THICKNSS TA THICKNSS CAVITY TO RORATION ( DIRCTION) CAVITY TO RORATION (LNGTH DIRCTION) K 0 D D ± ± ± ± ± ± ± 0.0 W 8.00 ± 0.0 t ± 0.02 C 5.4 ± 0.0 T t ± ± ± 0.05 OR SOT-2 (SC70- LAD) An 8 C MAX OR SOT-6 (SC70-6 LAD) 0 C MAX ± ± ± ± ± ± ± ± ± ± ± ± ± or product information and a complete list of distributors, please go to our web site. or technical assistance call: Americas/Canada: + (800) or (96) urope: +49 (0) China: Hong Kong: (65) India, Australia, New Zealand: (65) Japan: (+8 ) 5-852(Domestic/International), or (Domestic Only) Korea: (65) Singapore, Malaysia, Vietnam, Thailand, hilippines, Indonesia: (65) Taiwan: (65) Data subject to change. Copyright 2004 Agilent Technologies, Inc. Obsoletes March 24, N