STPS20M80C. Power Schottky rectifier. Features. Description

Size: px

Start display at page:

Download "STPS20M80C. Power Schottky rectifier. Features. Description"

Anthony Greer
5 years ago
Views:

1 STPSM8C Power Shottky retifier Features High untion temperature apability Optimized trade-off between leakage urrent and forward voltage drop Low leakage urrent Avalanhe apability speified nsulated pakage TO-FPAB insulated voltage: V pakage apaitane: 45 pf Desription This dual diode Shottky retifier is suited for high frequeny swith mode power supply. Pakaged in TO-AB, PA, D PA and TO- FPAB, this devie is partiularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these appliations with a good effiieny at both low and high load. Table 1. Symbol Devie summary Value F(AV) x A V RRM 8 V T (max) 175 C V F (typ) 49 mv Figure 1. A A PA STPSM8CR A TO-AB STPSM8CT V V RRM V AR V R Eletrial harateristis (a) x O F O R D PA STPSM8CG-TR A A TO-FPAB STPSM8CFP "Forward" X X V VTo V F(o) V F V F(xo) "Reverse" AR a. V ARM and ARM must respet the reverse safe operating area defined in Figure 13. V AR and AR are pulse measurements (t p < 1 µs). V R, R, V RRM and V F, are stati harateristis April 11 Do D 1874 Rev 1 1/

2 Charateristis STPSM8C 1 Charateristis Table. Absolute ratings (limiting values, per diode, at T amb = 5 C unless otherwise speified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 8 V F(RMS) Forward rms urrent 3 A F(AV) FSM P ARM (1) V ARM () Average forward urrent, δ =.5 Surge non repetitive forward urrent TO-AB, PA, D PA T = 16 C T = 155 C TO-FPAB T = 135 C T = 115 C When the two diodes 1 and are used simultaneously: ΔT (diode 1) = P(diode 1) x R th(-) (Per diode) + P(diode ) x R th() Per diode Per devie Per diode Per devie t p = ms sinusoidal T = 5 C A Repetitive peak avalanhe power T = 5 C, t p = 1 µs 67 W Maximum repetitive peak avalanhe voltage t p < 1 µs, T < 15 C, AR <.1 A V V () Maximum single pulse ASM peak avalanhe voltage t p < 1 µs, T < 15 C, AR <.1 A V T stg Storage temperature range -65 to +175 C T Maximum operating untion temperature (3) 175 C 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanhe energy measurements and diode validation in the avalanhe are provided in the appliation notes AN1768 and AN5.. See Figure dptot 1 < ondition to avoid thermal runaway for a diode on its own heatsink dt Rth(-a) Table 3. Thermal parameters Symbol Parameter Value Unit R th(-) R th() Juntion to ase Coupling TO-AB PA, D PA TO-FPAB per diode. total 1. per diode 4.9 total 4.5 TO-AB PA, D PA. TO-FPAB 3. A C/W C/W /11 Do D 1874 Rev 1

3 STPSM8C Charateristis Table 4. Stati eletrial harateristis (per diode) Symbol Parameter Test onditions Min. Typ. Max. Unit R (1) V F () Reverse leakage urrent Forward voltage drop 1. Pulse test: t p = 5 ms, δ < %. Pulse test: t p = 38 µs, δ < % T = 5 C µa V R = V RRM T = 15 C - 6. ma T = 5 C F = 5 A T = 15 C T = 5 C F = A T = 15 C T = 5 C F = A T = 15 C To evaluate the ondution losses use the following equation: P =.51 x F(AV) x F (RMS) V Figure. P F(AV) (W) Average forward power dissipation versus average forward urrent (per diode) δ =.5 δ =.1 δ =. δ =.5 δ = 1 1 δ = t p / T t p F(AV) (A) T Figure 3. F(AV) (A) Average forward urrent versus ambient temperature (δ =.5, per diode) R th(-a) = R th(-) TO-AB / PA / D PA TO-FPAB 1 T amb( C) Figure 4. Normalized avalanhe power derating versus pulse duration Figure 5. Normalized avalanhe power derating versus untion temperature 1 P P ARM ARM (tp) (1µs) P ARM(T) P ARM(5 C) t (µs) T ( C) p Do D 1874 Rev 1 3/11

4 Charateristis STPSM8C Figure (A) M M Non repetitive surge peak forward urrent versus overload duration (maximum values, per diode) TO-AB / PA / D PA T = 5 C T = 75 C T = 15 C t δ =.5 t(s) 1.E-3 1.E- 1.E-1 1.E+ Figure Z th(-) /Rth(-) Single pulse Relative thermal impedane untion to ase versus pulse duration TO-AB / PA / D PA.1. t p(s) 1.E-4 1.E-3 1.E- 1.E-1 1.E+ Figure (A) M M Non repetitive surge peak forward urrent versus overload duration (maximum values, per diode) TO-FPAB T = 5 C T = 75 C T = 15 C t δ =.5 t(s) 1.E-3 1.E- 1.E-1 1.E+ Figure Z th(-) /Rth(-) Single pulse Relative thermal impedane untion to ase versus pulse duration (TO-FPAB) TO-FPAB.1 t p(s). 1.E-3 1.E- 1.E-1 1.E+ 1.E+1 Figure. Reverse leakage urrent versus reverse voltage applied (typial values, per diode) Figure 11. Juntion apaitane versus reverse voltage applied (typial values, per diode) 1.E+5 1.E+4 (µa) R T = 15 C T = 15 C C(pF) F = 1 MHz V os = 3 mv T = 5 C RMS 1.E+3 T = C 1.E+ T = 75 C T = 5 C 1.E+1 T = 5 C V R(V) 1.E V R(V) 1 4/11 Do D 1874 Rev 1

5 STPSM8C Charateristis Figure FM (A) Forward voltage drop versus forward urrent (per diode) T = 15 C (Maximum values) T = 15 C (Typial values) T = 5 C (Maximum values) V FM(V) Figure arm (A) Reverse safe operating area (t p < 1 µs and T < 15 C) arm (V arm) 15 C, 1 µs V (V) arm Figure 14. Thermal resistane untion to ambient versus opper surfae under tab for D PA R 8 7 th(-a) ( C/W) epoxy printed board opper thikness = 35 µm 6 5 DPA 4 3 S Cu(m ) Do D 1874 Rev 1 5/11

6 Pakage information STPSM8C Pakage information Epoxy meets UL94, V Cooling method: by ondution (C) Reommended torque value:.4 to.6 N m n order to meet environmental requirements, ST offers these devies in different grades of ECOPAC pakages, depending on their level of environmental ompliane. ECOPAC speifiations, grade definitions and produt status are available at: ECOPAC is an ST trademark. Table 5. TO-AB dimensions Ref. Millimeters Dimensions nhes Min. Max. Min. Max. A H Dia L5 C A L7 C D E F L F L6 F F G F1 L9 D G F L4 H L 16.4 Typ..645 Typ. G1 G M E L L L L L M.6 Typ.. Typ. Dia /11 Do D 1874 Rev 1

7 STPSM8C Pakage information Table 6. TO-FPAB dimensions Dimensions Ref. Millimeters nhes Min. Max. Min. Max. A H A B B D L7 L L6 L3 Dia. E F F F G F1 G F L4 D H F G1 E L 16 Typ..63 Typ. L G L L L Dia Do D 1874 Rev 1 7/11

8 Pakage information STPSM8C Table 7. D PA dimensions Dimensions Ref. Millimeters nhes Min. Max. Min. Max. L E C A A A B L D B L3 B B C R C C D G E A G L M * V * FLAT ZONE NO LESS THAN mm L L M R.4 typ..16 typ. V 8 8 Figure 15. D PA footprint (dimensions in mm) /11 Do D 1874 Rev 1

9 STPSM8C Pakage information Table 8. PA dimensions Dimensions Ref. Millimeters nhes L E A Min. Max. Min. Max. A b D b L L b1 D e e e1 b e E L L L Do D 1874 Rev 1 9/11

10 Ordering information STPSM8C 3 Ordering information Table 9. Ordering information Order ode Marking Pakage Weight Base qty Delivery mode STPSM8CT STPSM8CT TO-AB 1.9 g 5 Tube STPSM8CFP STPSM8CFP TO-FPAB. g 5 Tube STPSM8CR STPSM8CR PA 1.49 g 5 Tube STPSM8CG-TR STPSM8CG D PA 1.48 g Tape and reel 4 Revision history Table. Revision history Date Revision Changes 11-Apr-11 1 First issue. /11 Do D 1874 Rev 1

11 STPSM8C Please Read Carefully: nformation in this doument is provided solely in onnetion with ST produts. STMiroeletronis NV and its subsidiaries ( ST ) reserve the right to make hanges, orretions, modifiations or improvements, to this doument, and the produts and servies desribed herein at any time, without notie. All ST produts are sold pursuant to ST s terms and onditions of sale. Purhasers are solely responsible for the hoie, seletion and use of the ST produts and servies desribed herein, and ST assumes no liability whatsoever relating to the hoie, seletion or use of the ST produts and servies desribed herein. No liense, express or implied, by estoppel or otherwise, to any intelletual property rights is granted under this doument. f any part of this doument refers to any third party produts or servies it shall not be deemed a liense grant by ST for the use of suh third party produts or servies, or any intelletual property ontained therein or onsidered as a warranty overing the use in any manner whatsoever of suh third party produts or servies or any intelletual property ontained therein. UNLESS OTHERWSE SET FORTH N ST S TERMS AND CONDTONS OF SALE ST DSCLAMS ANY EXPRESS OR MPLED WARRANTY WTH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS NCLUDNG WTHOUT LMTATON MPLED WARRANTES OF MERCHANTABLTY, FTNESS FOR A PARTCULAR PURPOSE (AND THER EQUVALENTS UNDER THE LAWS OF ANY JURSDCTON), OR NFRNGEMENT OF ANY PATENT, COPYRGHT OR OTHER NTELLECTUAL PROPERTY RGHT. UNLESS EXPRESSLY APPROVED N WRTNG BY AN AUTHORZED ST REPRESENTATVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORZED OR WARRANTED FOR USE N MLTARY, AR CRAFT, SPACE, LFE SAVNG, OR LFE SUSTANNG APPLCATONS, NOR N PRODUCTS OR SYSTEMS WHERE FALURE OR MALFUNCTON MAY RESULT N PERSONAL NJURY, DEATH, OR SEVERE PROPERTY OR ENVRONMENTAL DAMAGE. ST PRODUCTS WHCH ARE NOT SPECFED AS "AUTOMOTVE GRADE" MAY ONLY BE USED N AUTOMOTVE APPLCATONS AT USER S OWN RS. Resale of ST produts with provisions different from the statements and/or tehnial features set forth in this doument shall immediately void any warranty granted by ST for the ST produt or servie desribed herein and shall not reate or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various ountries. nformation in this doument supersedes and replaes all information previously supplied. The ST logo is a registered trademark of STMiroeletronis. All other names are the property of their respetive owners. 11 STMiroeletronis - All rights reserved STMiroeletronis group of ompanies Australia - Belgium - Brazil - Canada - China - Czeh Republi - Finland - Frane - Germany - Hong ong - ndia - srael - taly - Japan - Malaysia - Malta - Moroo - Philippines - Singapore - Spain - Sweden - Switzerland - United ingdom - United States of Ameria Do D 1874 Rev 1 11/11

STPS60L30C-Y. Automotive power Schottky rectifier. Features. Description

STPS60L30C-Y. Automotive power Schottky rectifier. Features. Description Automotive power Shottky retifier Features ery small ondution losses Negligible swithing losses Extremely fast swithing AEC-Q11 qualified A1 A2 Desription Pin 1 6 A dual enter tab Shottky retifier suitable