JIEJIE MICROELECTRONICS CO., Ltd

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1 JIJI MICROLCTRONICS CO., Ltd P6SM Series 600 Transient Voltage Suppressor Rev.2.0 DSCRIPTION: TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive industries, munitions, telecommunications, aerospace industries, and intelligent control systems. TURS: Glass passivated or planar junction xcellent clamping capability Repetition rate (duty cycle): 0.01% Typical I R less than 1μ above 10V. Low profile package and low inductance 600 Peak Pulse power capability at μs waveform. ast response time: typically less than 1.0ps from 0V to V R min. Plastic package has Underwriters Laboratory lammability 94V-0. or surface mounted applications in order to optimize board space SM Symbol SOLUT MXIMUM RTIN NGS (T =25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Storage temperature range T stg -55 to +125 Operating junction temperature range Steady state power dissipation at T L =75 Peak pulse power dissipation on 10/1000μs waveform Maximum Instantaneous orward Voltage at 50 for Unidirectional T j P M(V) P PP V -55 to V MRKING V8 6V8 : Device Marking Code 1409: In ninth week, 2014 TL: / 6-

2 LCTRICL CHRCTRISTICS (T =25 ) Part Number Marking V R I V R V T I T V Uni-polar i-polar Uni i (V) μ min(v) max(v) m V P6SM6.8 P6SM6.8C 6V8 6V8C P6SM7.5 P6SM7.5C 7V5 7V5C P6SM8.2 P6SM8.2C 8V2 8V2C P6SM9.1 P6SM9.1C 9V1 9V1C P6SM10 P6SM10C 10 10C P6SM11 P6SM11C 11 11C P6SM12 P6SM12C 12 12C P6SM13 P6SM13C 13 13C P6SM15 P6SM15C 15 15C P6SM16 P6SM16C 16 16C P6SM18 P6SM18C 18 18C P6SM20 P6SM20C 20 20C P6SM22 P6SM22C 22 22C P6SM24 P6SM24C 24 24C P6SM27 P6SM27C 27 27C P6SM30 P6SM30C 30 30C P6SM33 P6SM33C 33 33C P6SM36 P6SM36C 36 36C P6SM39 P6SM39C 39 39C P6SM43 P6SM43C 43 43C P6SM47 P6SM47C 47 47C P6SM51 P6SM51C 51 51C P6SM56 P6SM56C 56 56C P6SM62 P6SM62C 62 62C P6SM68 P6SM68C 68 68C P6SM75 P6SM75C 75 75C P6SM82 P6SM82C 82 82C P6SM91 P6SM91C 91 91C P6SM100 P6SM100C C TL: / 6-

3 LCTRICL CHRCTRISTICS (T =25, continued) Part Number Marking V R I V R V T I T V Uni-Polar i-polar Uni i V μ min(v) max(v) m V P6SM110 P6SM110C C P6SM120 P6SM120C C P6SM130 P6SM130C C P6SM150 P6SM150C C P6SM160 P6SM160C C P6SM170 P6SM170C C P6SM180 P6SM180C C P6SM200 P6SM200C C P6SM220 P6SM220C C P6SM250 P6SM250C C P6SM300 P6SM300C C P6SM350 P6SM350C C P6SM400 P6SM400C C P6SM440 P6SM440C C P6SM480 P6SM480C C P6SM510 P6SM510C C P6SM550 P6SM550C C P6SM600 P6SM600C C Surge waveform: 10/1000μs V R :Stand-off Voltage -- Maximum voltage that can be applied V R : reakdown Voltage V C :Clamping Voltage -- Peak voltage measured across the suppressor at a specified Ipp I R : Reverse Leakage Current 1 TL: / 6-

4 ORDRING INORMTION RTINGS ND V-I CHRCTRISTICS CURVS (T =25ºC, unless otherwise noted) IG.1:V- I curve characteristics (Uni-directional) IG.2:V- I curve characteristics (i-directional) IPP VC VR VR V V VC VR VR IT IR IR IT VR VR VC V IPP IPP 150 IG.3: Pulse waveform IPPM(%IRSM) tr=10μs tr = rise time to peak value td = decay time to half value IG.4: Pulse derating curve PPP derating in percentage(%) Peak value Half value td t(ms) T( ) TL: / 6-

5 SOLDRING PRMTRS Reflow Condition Pb-ree assembly (see IG.5) Pre Heat -Temperature Min (T s(min) ) Temperature Max(T s(max) ) Time (Min to Max) (ts) secs. IG.5: Reflow condition TP Ramp-up TL tp tl Critical Zone TL to TP verage ramp up rate (Liquid us Temp (T L ) to peak) T s(max) to T L - Ramp-up Rate 3 /sec. Max 3 /sec. Max Temperature TS(max) TS(min) Preheat ts Ramp-down Reflow -Temperature(T L )(Liquid us) Temperature(t L ) secs. 25 time to peak temperatue (t 25 to peak) Time Peak Temp (T p ) +260(+0/-5) Time within 5 of actual Peak Temp (t p ) Ramp-down Rate Time 25 to Peak Temp (T P ) 30 secs. Max 6 /sec. Max 8 min. Max Do not exceed +260 PCKG MCHNICL DT Dimensions Ref. Millimeters Inches C Min. Max. Min. Max. G H D C D J K G 0.15 H L J K DO-214 (SM) L TL: / 6-

6 TP ND RL SPCIICTION-SM d P0 P1 Cathode Ref. Dimensions Millimeters Inches 3.76 ± ± ± ± P d D 1.5 ± ± D2 13 ± ± ± ± ± ± P 8.0 ± ± P0 4.0 ± ± P1 2.0 ± ± ± ± ± ± OUTLIN RL (PCS) PR CRTON (PCS) RL DIMTRS (mm) TPING 3,000 48, Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the first version which is made in 22-May This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed ll rights reserved. TL: / 6-

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