JIEJIE MICROELECTRONICS CO., Ltd
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1 JIJI MICROLCTRONICS CO., Ltd CPxxxxSA Series TSS Rev.4.3 DSCRIPTION: CPxxxxSA series thyristors are a type of semiconduct component.they are designed in applications, such as modems, telephones, line cards, answering machines, FAX machines, SLICs, T1/1, xdsl, PBXs and more. FATURS: Low profile package. Low on-state voltage. xcellent capability of absorbing transient surge. Quick response to surge voltage (ns Level). liminates overvoltage caused by fast rising transients. Moisture sensitivity level: Level 1. Non degenerative. SMA 1 2 Symbol ABSOLUT MAXIMUM RATINGS(TA=25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Storage temperature range TSTG -60 to +150 Operating junction temperature range TJ -40 to +125 Repetitive peak pulse current IPP 80 A LCTRICAL CHARACTRISTICS(TA=25 ) Symbol VDRM IDRM VS Parameter Peak off-state voltage Off-state current Switching voltage V-I Curve IT IS IH +I IS VT IT IH CO Switching current On-state voltage On-state current Holding current Off-state capacitance IDRM -V +V -I VT VDRM VS TL: / 5-
2 MARKING 1409 CP06A CP06A : Device Marking Code 1409: In ninth week, 2014 LCTRICAL CHARACTRISTICS(TA=25,continued) Part Number IDRM@VDRM VS VT@ IT IH CO 2 µa V V ma V A ma pf Marking max min max max max max min max CP0640SA CP06A CP0720SA CP07A CP0900SA CP09A CP1100SA CP11A CP1300SA CP13A CP1500SA CP15A CP1800SA CP18A CP2300SA CP23A CP2600SA CP26A CP3100SA CP31A CP3500SA CP35A CP3800SA CP38A 1Vs is measured at 100KV/ s 2 Off-state capacitance is measured in VDC=2V, VRMS=1V, f=1mhz SURG RATINS IPP(A)min Series 2 10µs 8 20µs µs µs A TL: / 5-
3 ORDRING INFORMATION SOLDRING PARAMTRS Reflow Condition -Temperature Min (Ts(min)) +150 Pb-Free assembly (see FIG.2) Pre Heat -Temperature Max(Ts(max)) Time (Min to Max) (ts) Average ramp up rate (Liquidus Temp (TL)to peak) Ts(max) to TL - Ramp-up Rate secs. 3 /sec. Max 3 /sec. Max Reflow -Temperature(TL) (Liquidus) Temperature(tL) secs. Peak Temp (Tp) +260(+0/-5) Time within 5 of actual Peak Temp (tp) Ramp-down Rate Time 25 to Peak Temp (TP) 30 secs. Max 6 /sec. Max 8 min. Max Do not exceed +260 FIG.1: tr td pulse waveform FIG.2: Reflow condition %IPP 100 Peak value tr = rise time to peak value td = decay time to half value TP TL Ramp-up tp tl Critical Zone TL to TP TS(max) 50 Half value Temperature TS(min) ts Preheat Ramp-down 0 0tr td t(µs) 25 time to peak temperatue (t 25 to peak) Time TL: / 5-
4 FIG.3: Normalized Vs change vs. junction temperature Percent of Vs change(%) 25 Tj( ) FIG.4: Normalized DC holding current vs. case temperature IH(Tj)/IH(Tj=25 ) TC( ) PACKAG MCHANICAL DATA B C H F L D J K J DO-214AC (SMA) A G Dimensions Ref. Millimeters Inches Min. A 2.60 B 4.15 C 1.25 D F G 0.15 H 2.00 J 2.00 K L 1.80 Max Min Max TL: / 5-
5 TAP AND RL SPCIFICATION-SMA D0 P0 P2 Ref. A0 Dimensions Millimeters Inches 2.79 ± ± F B0 W B0 C 5.33 ± ± A0 P1 D ± ± ± ± ± 0.3 F 5.5 ± 0.2 P ± 0.2 P ± 0.2 P ± 0.2 W 12.0± ± ± ± ± ± ± W ± ± PART No. UNIT WIGHT (g/pcs) typ. RL (PCS) PR CARTON (PCS) RL DIAMTRS (mm) CPxxxxSA ,000 80, Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the 4.3rd version which is made in 29-Mar This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright 2018 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TL: / 5-
JIEJIE MICROELECTRONICS CO., Ltd
JIJI MICROLCTRONICS CO., Ltd P6SM Series 600 Transient Voltage Suppressor Rev.2.0 DSCRIPTION: TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive
JIEJIE MICROELECTRONICS CO., Ltd
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JIEJIE MICROELECTRONICS CO., Ltd
JIJI MICROLCTRONICS CO., Ltd SMJ Series 400 Transient Voltage Suppressor Rev.2.0 DSCRIPTION: TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive industries,
Exterior MAX MAX MAX MIN MAX BS0060N-C-F
Features Excellent capability of absorbing transient surge Quick response to surge voltage(ns Level) Eliminates overvoltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight:
DATA SHEET THYRISTOR SURGE SUPPRESSORS MODEMS/LINE CARD PXXXXSX series
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BS0300N-2C. Order Code: Exterior. Features. Agency Approvals. Schematic Symbol. Part SMB-T. Weight 88 mg Non degenerative RS485/232/422.
eatures xterior xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight
BS0060N-2C. Order Code: B006N2C. Exterior. Features. Agency Approvals. Schematic Symbol. Part SMB-T. Weight:88mg Non degenerative. Video.
eatures xterior xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: level 1 Weight:88mg
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Features xcellent capability of absorbing transient surge Quick response to surge voltage (ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: level 1 Weight:87mg
B11ND BS1100N-D1. Suppresser Features. ThyristorSurge. Exterior. Package (top. view) Schematic Symbol. Part SMB-F
Features xcellent capability of absorbing transient surge Quick response to surge voltage(ns Level) liminates overvoltage caused by fast rising transients Moisture sensitivity level: level 1 Weight:87mg
Exterior. cathode V R V BR (V) min.(v)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 400Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior SMA Application
Exterior. cathode. V BR min.(v) V R (V)
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Exterior. V BR min.(v) V R (V)
Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 5000Watts peak pulse power (tp=10/1000μ S) Quick response to surge voltage Low clamping voltage Moisture sensitivity level:level 1 Exterior DO-214AB
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