How to Get the Most from Your Low Current Measurement Instruments

Size: px
Start display at page:

Download "How to Get the Most from Your Low Current Measurement Instruments"

Transcription

1 How to Get the Most from Your Low Current Measurement Instruments Jonathan L. Tucker Lead Marketing ngineer: Nanotechnology, Research & ducation KITHLY 1 G R T R M S U R O F C O N F I D N C

2 Presentation Overview Modeling the low current measurement system Defining theoretical current noise limits Controlling sources of low current measurement error Low current measurement using source-measure units (SMUs) 2 G R T R M S U R O F C O N F I D N C

3 What Limits Your Results? The material or device under test [DUT] itself? The connections between the DUT and instruments [including cables, fixtures, switching]? The measuring instrument? The measurement technique? LL of these things will affect your results! 3 G R T R M S U R O F C O N F I D N C

4 Current Measurement Goal DUT Is I mmeter Goal: I = I s 4 G R T R M S U R O F C O N F I D N C

5 Current Measurement Problems DUT R IN Is R S I mmeter Three main problems: 1. Source is not ideal, I s is dependent upon load 2. mmeter is not ideal, it is not an absolute short 3. Need to control common sources of error 5 G R T R M S U R O F C O N F I D N C

6 Common rror Sources Theoretical Limitations Source resistance limitations Triboelectric ffects Contamination ffects Leakage currents 6 G R T R M S U R O F C O N F I D N C

7 Johnson Current Noise The R s provides a fundamental limit to how well you can resolve I s : I J = V J /R s = 4kTBR s = 4kTB R s R s k - Boltzmann s constant: 1.38 x J/K T - bsolute temperature of the source B - Noise bandwidth in hertz R S - Resistance of the source in Ohms 7 G R T R M S U R O F C O N F I D N C

8 Theoretical Limits of Current Measurement Noise Current 1µ 1n p f a kΩ 1MΩ 1GΩ TΩ 1PΩ 1Ω Source Resistance p-p noise taken at 3Hz, 300K 8 G R T R M S U R O F C O N F I D N C

9 Theoretical Limits of Current Measurement Noise Current 1µ 1n p f 1a Prohibited by noise kΩ 1MΩ 1GΩ TΩ 1PΩ 1Ω Source Resistance p-p noise taken at 3Hz, 300K 9 G R T R M S U R O F C O N F I D N C

10 Theoretical Limits of Current Measurement Noise Current 1µ 1n 1p Within theoretical limits f 1a Prohibited by noise kΩ 1MΩ 1GΩ 1TΩ 1PΩ 1Ω Source Resistance p-p noise taken at 3Hz, 300K 10 G R T R M S U R O F C O N F I D N C

11 Triboelectric ffect Noise current can be tens of n 11 G R T R M S U R O F C O N F I D N C

12 Reducing Triboelectric ffect Noise Use low noise cable Minimize cable length get measurement close to source Isolate measurement from vibration Tape loose measurement cable to stable surface If 10n of noise won t affect your results, don t need to worry about this 12 G R T R M S U R O F C O N F I D N C

13 Contamination ffect Noise current can be tens of n 13 G R T R M S U R O F C O N F I D N C

14 Minimizing Contamination ffects Use air as insulator when feasible void touching insulators surrounding sensitive current nodes or use gloves Use as little flux as possible when soldering Clean around soldered regions with virgin solvent and clean swabs Be especially careful if circuit will operate in high humidity environment Increasing levels of care can reduce it to f levels 14 G R T R M S U R O F C O N F I D N C

15 Typical Magnitudes of Generated Currents 15 G R T R M S U R O F C O N F I D N C

16 nd then there is the connection 16 G R T R M S U R O F C O N F I D N C

17 Leakage Current Leakage currents are generated by resistance paths between the measurement circuit and nearby voltage sources. Leakage currents can be reduced by: Using good quality insulators (such as Teflon, polyethylene) in the test circuit. Reducing humidity in the test lab. Using guarding technique 17 G R T R M S U R O F C O N F I D N C

18 Cables and Connections Cable leakage issues require guarding to eliminate parasitic capacitances. No Guarding R Shunt C Shunt time I Time constant = R DUT * (C+C DUT ) Guarding R Shunt I C Shunt time Time constant = R DUT * (C+C DUT ) 18 G R T R M S U R O F C O N F I D N C

19 Source-Measure Units Combine source and measure in a single package Some compromise in flexibility, must source and measure in the same part of the circuit Swiss army knife of instrumentation Voltage source, current source, voltmeter, ammeter, and ohmmeter 19 G R T R M S U R O F C O N F I D N C

20 Common-Source FT Characterization One of the more common FT tests involving family of curves is common-source characteristics. Two SMU channels are required for the tests. For low current tests (<1m), triax cables are recommended to make instrument-to-test fixture connections. 20 G R T R M S U R O F C O N F I D N C

21 Carbon Nanotube lectronics Characterization pplication: IV Characterization on CNTbased lectronics Key Measurement Requirements: Low current censitivity nd Use pplications: Smaller consumer electronics Low power consumption devices IBM Copyright 21 G R T R M S U R O F C O N F I D N C

22 Keithley s Series 2600: Designed to Meet Demanding pplications I-V functional test and characterization of a wide range of applications: Semiconductor device testing Wafer level reliability Low cost semiconductor device characterization Wafer sort Nanotech research Low-power characterization Low current component testing Optoelectronic devices Sensors Dielectric characterization Research and education lab use Materials testing Hall effect and Van der Pauw measurements Test at the wafer, device, and/or packaged part level Multiple instruments in one: SMU DMM Precision Bias Source Low Frequency Pulse Generator rbitrary Waveform Generator 22 G R T R M S U R O F C O N F I D N C

23 Newest Members of the Series 2600: Models 2635 and 2636 Low Current System SourceMeter Instruments Single and dual channel versions 1f measurement resolution Triax connectors with flexible grounding scheme 23 G R T R M S U R O F C O N F I D N C

24 Model 2636 nables 4x Faster Low Current Measurements (Competitive product) 24 G R T R M S U R O F C O N F I D N C

25 TSP - Revolutionary Technology that Brings PC-like Functionality to Test Instruments Components of TSP Technology 1. Powerful Processor 2. Test Script Language Optimize & Customize the instrument 3. TSP-Link - for easily scaleable system with no mainframe GPIB master TSP-Link slave 25 G R T R M S U R O F C O N F I D N C

26 xample Configuration: NBTI Parallel Test System for Shared Gate FTS with 2 Masters (4-SMUs per master) Master1 gate (shared) drain (1) drain (2) drain (3) GPIB TSP-Link Channel Group Controlled by Master2 Master2 gate (shared) drain (1) drain (2) drain (3) 26 G R T R M S U R O F C O N F I D N C

27 Unmatched Flexibility and Scalability nsures Data Correlation Throughout the Process Scalability nabled by TSP and TSP-Link Benchtop Characterization Systems (Research and Development) Integrated Test Systems (Semi Labs) Compact Multi-channel Test Systems (Production Test) 27 G R T R M S U R O F C O N F I D N C

28 Summary Control sources of low current measurement error Know your source resistance limitations as much as possible. Take care of relevant current noise generators in cable and insulators. Use Triax cable if measuring below 100n. void contamination. Use proper handling techniques. SourceMeter architecture provides multiple instruments in one Models 2635/2636 offers the industry s fastest low current measurement capability for demanding test applications. highly integrated automated test solution at half the cost of ownership. TSP-Link allows multiple System SourceMeter Instruments to be controlled as a single unit. 28 G R T R M S U R O F C O N F I D N C

29 Contact Keithley with Your Questions Speaker: Jonathan L. Tucker, Lead Marketing ngineer: Nanotechnology, Research & ducation, Keithley Instruments, Inc. mail: Worldwide Headquarters Within the US: KITHLY Outside the US: mail: dditional offices: urope: Germany: (+49) Great Britain: (+44) Far ast: China:(+86) Japan:(+81) Korea:(+82) Taiwan:(+886) Keithley also offers a variety of seminars and training classes. For additional seminars and events, visit For our current training class schedule, visit 29 G R T R M S U R O F C O N F I D N C

CD54/74AC153, CD54/74ACT153

CD54/74AC153, CD54/74ACT153 CD4/74AC13, CD4/74ACT13 Data sheet acquired from Harris Semiconductor SCHS237A September 1998 - Revised May 2000 Dual 4-Input Multiplexer Features Description [ /Title (CD74 AC13, CD74 ACT1 3) /Subject

More information

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS

RATIOMETRIC, LINEAR HALL-EFFECT SENSORS UGN3503 HLL EFFECT SENSOR The UGN3503LT, UGN3503U, and UGN3503U Hall-effect sensors accurately track extremely small changes in magnetic flux density changes generally too small to operate Hall-effect

More information

Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000

Logic Configuration Part Number Package Type Packing Method Quantity. IX4423N 8-Pin SOIC Tube 100 IX4423NTR 8-Pin SOIC Tape & Reel 2000 IX23-IX2-IX25 3-mpere Dual Low-Side Ultrafast MOSFET Drivers Features 3 Peak Output Current Wide Operating Voltage Range:.5V to 35V - C to +25 C Operating Temperature Range Latch-up Protected to 3 Fast

More information

RS INDUSTRY LIMITED. RS Chip Array ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D

RS INDUSTRY LIMITED. RS Chip Array ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: RS INDUSTRY LIMITED Part Name ARRAY TYPE MULTILAYER VARISTOR Part No. RS

More information

8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground).

8-channel analog multiplexer/demultiplexer. For operation as a digital multiplexer/demultiplexer, V EE is connected to V SS (typically ground). Rev. 04 12 January 2005 Product data sheet 1. General description 2. Features The is an with three address inputs (0 to 2), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and

More information

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236

AOZ Ω Low-Voltage Dual SPDT Analog Switch. General Description. Features. Applications AOZ6236 0.35 Ω Low-Voltage Dual PDT nalog witch General Description The OZ6236 is a 0.35 Ω low-voltage Dual ingle Pole Double Throw (PDT) analog switch. The OZ6236 operates from a single 1.65 V to 4.3 V supply.

More information

PRODUCT SPECIFICATION 1 SCOPE APPLICABLE STANDARDS CATALOG NO. STRUCTURE..3 4 CONNECTOR SHAPE, DIMENSIONS AND MARTERIALS..

PRODUCT SPECIFICATION 1 SCOPE APPLICABLE STANDARDS CATALOG NO. STRUCTURE..3 4 CONNECTOR SHAPE, DIMENSIONS AND MARTERIALS.. 1 of 1 A Table of Contents: 1 SCOPE.. 3 2 APPLICABLE STANDARDS..... 3 3 CATALOG NO. STRUCTURE..3 4 CONNECTOR SHAPE, DIMENSIONS AND MARTERIALS..3 5 ACCOMMOD CONDUCTORS (CIC).....3 6 PACKAGING CONDITION........3

More information

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter Rev. 5 1 July 27 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. It provides an inverting single stage function. The standard output

More information

CD54/74HC151, CD54/74HCT151

CD54/74HC151, CD54/74HCT151 CD54/74HC151, CD54/74HCT151 Data sheet acquired from Harris Semiconductor SCHS150A September 1997 - Revised May 2000 High Speed CMOS Logic 8-Input Multiplexer [ /Title (CD74H C151, CD74H CT151) /Subject

More information

CD54/74HC393, CD54/74HCT393

CD54/74HC393, CD54/74HCT393 CD54/74HC393, CD54/74HCT393 Data sheet acquired from Harris Semiconductor SCHS186A September 1997 - Revised May 2000 High Speed CMOS Logic Dual 4-Stage Binary Counter /Title CD74 C393 D74 CT39 ) Subect

More information

The 74HC21 provide the 4-input AND function.

The 74HC21 provide the 4-input AND function. Rev. 03 12 November 2004 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL).

More information

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1. Rev. 1 28 September 24 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low

More information

V, I, R measurements: how to generate and measure quantities and then how to get data (resistivity, magnetoresistance, Hall). Makariy A.

V, I, R measurements: how to generate and measure quantities and then how to get data (resistivity, magnetoresistance, Hall). Makariy A. V, I, R measurements: how to generate and measure quantities and then how to get data (resistivity, magnetoresistance, Hall). 590B Makariy A. Tanatar November 10, 2008 SI units/history Resistivity Typical

More information

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08

AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08 AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1BVW S/08 Introduction The HAH1BVW family is for the electronic measurement of DC, AC or pulsed currents in high power and low voltage automotive applications

More information

Miniature Electronically Trimmable Capacitor V DD. Maxim Integrated Products 1

Miniature Electronically Trimmable Capacitor V DD. Maxim Integrated Products 1 19-1948; Rev 1; 3/01 Miniature Electronically Trimmable Capacitor General Description The is a fine-line (geometry) electronically trimmable capacitor (FLECAP) programmable through a simple digital interface.

More information

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1. Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT HIGH SPEED: t PD = 16ns (TYP.) at V CC = 6V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C HIGH NOISE IMMUNITY: V NIH = V NIL = 28 % V CC (MIN.) SYMMETRICAL

More information

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with

More information

Metallized Polyester Film Capacitors (MKT-S)

Metallized Polyester Film Capacitors (MKT-S) Metallized Polyester Film Capacitors (MKT-S) Series/Type: B32538 The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product Date of Withdrawal Deadline Last

More information

Series FEATURES AND BENEFITS INTRODUCTION. Figure 1 Power Derating Curve. Table 1 Tolerance and TCR vs. Resistance

Series FEATURES AND BENEFITS INTRODUCTION. Figure 1 Power Derating Curve. Table 1 Tolerance and TCR vs. Resistance The 303143 Series Ultra The High-Precision 303143 Series Fixed Resistor Z-Foil Z201 Ultra High-Precision Fixed Resistor Z-Foil Z201 Screen/Test Flow as modified from S-311-P813 Proposed by NASA FEATURES

More information

IH5341, IH5352. Dual SPST, Quad SPST CMOS RF/Video Switches. Description. Features. Ordering Information. Applications. Pinouts.

IH5341, IH5352. Dual SPST, Quad SPST CMOS RF/Video Switches. Description. Features. Ordering Information. Applications. Pinouts. SEMICONDUCTOR IH, IH2 December Features Description Dual SPST, Quad SPST CMOS RF/Video Switches R DS(ON) < Ω Switch Attenuation Varies Less Than db From DC to 00MHz "OFF" Isolation > 0dB Typical at 0MHz

More information

PSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

PSMN K. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor Rev. 6 January 2 Product specification. Description SiliconMX products use the latest Philips TrenchMOS 2 technology to achieve the lowest possible on-state resistance in a SOT96- (SO8) package. Product

More information

74AUP1G95 TinyLogic Low Power Universal Configurable Two-Input Logic Gate (Open Drain Output)

74AUP1G95 TinyLogic Low Power Universal Configurable Two-Input Logic Gate (Open Drain Output) 74UPG9 TinyLogic Low Power Universal onfigurable Two-Input Logic Gate (Open Drain Output) Features 0.8 V to.6 V V Supply Operation.6 V Over-Voltage Tolerant I/Os at V from 0.8V to.6 V Extremely High Speed

More information

Super High AUTO (SHA) Series

Super High AUTO (SHA) Series PART NO. SFI1206SA240-1R5J 1.1 Technology Data Symbol Value Unit Maximum allowable continuous DC voltage V DC 12 V Breakdown voltage measured Vv 24(±10%) V Maximum clamping voltage V CLAMP < 40 V Maximum

More information

Description. For Fairchild s definition of Eco Status, please visit:

Description. For Fairchild s definition of Eco Status, please visit: FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)

More information

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. Recognized (File #E90700, Volume 2) VDE Recognized (File #13616) (add option V for VDE approval, i.e, MOCD223VM)

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

More information

Fig. 1 Fig. 2. Calculate the total capacitance of the capacitors. (i) when connected as in Fig. 1. capacitance =... µf

Fig. 1 Fig. 2. Calculate the total capacitance of the capacitors. (i) when connected as in Fig. 1. capacitance =... µf 1. Fig.1 shows two capacitors, A of capacitance 2µF, and B of capacitance 4µF, connected in parallel. Fig. 2 shows them connected in series. A two-way switch S can connect the capacitors either to a d.c.

More information

The drive to make devices smaller and faster

The drive to make devices smaller and faster Parametric Measurement Issues with 100 nm CMOS LARRY DANGREMOND, Cascade Microtech, Inc., Beaverton, OR, USA A BSTRACT The drive to make devices smaller and faster continues. CMOS geometries are driving

More information

CD74HC147, CD74HCT147

CD74HC147, CD74HCT147 Data sheet acquired from Harris Semiconductor SCHS149 September 1997 CD74HC147, CD74HCT147 High Speed CMOS Logic 10-to-4 Line Priority Encoder [ /Title (CD74 HC147, CD74 HCT14 7) /Subject (High Speed CMOS

More information

No Item Code Description Series Reference. Thickness. M B min (mm) T (mm) code. See Thickness Specification Reference Table below

No Item Code Description Series Reference. Thickness. M B min (mm) T (mm) code. See Thickness Specification Reference Table below FEATURE A wide selection of sized is available (0201 to 2225) High capacitance in given case size Capacitor with lead-free termination (pure Tin) RoHS and HALOGEN compliant. Application: DC to DC converter.

More information

Features. Functional Diagrams, Pin Configurations, and Truth Tables

Features. Functional Diagrams, Pin Configurations, and Truth Tables Features Low On-Resistance (Ω typ) Minimizes Distortion and Error Voltages Low Glitching Reduces Step Errors in Sample-and-Holds. Charge Injection, pc typ Single-Supply Operation (+.V to +1V) Improved

More information

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1. M3D88 Rev. 1 5 August 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT23.

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

TECHNICAL INFORMATION

TECHNICAL INFORMATION TECHNICAL INFORMATION THE EFFECTS OF ESR AND ESL IN DIGITAL DECOUPLING APPLICATIONS by Jeffrey Cain, Ph.D. AVX Corporation Abstract: It is common place for digital integrated circuits to operate at switching

More information

CD54/74HC147, CD74HCT147. High Speed CMOS Logic 10-to-4 Line Priority Encoder. Features. [ /Title (CD74 HC147, CD74 HCT14 7) /Subject

CD54/74HC147, CD74HCT147. High Speed CMOS Logic 10-to-4 Line Priority Encoder. Features. [ /Title (CD74 HC147, CD74 HCT14 7) /Subject CD/7HC7, CD7HCT7 Data sheet acquired from Harris Semiconductor SCHS9B September 997 - Revised March 00 High 0-to- Encoder [ /Title (CD7 HC7, CD7 HCT 7) /Subject (High 0-to- Encode r) /Autho r () /Keywords

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On February the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

More information

CD54/74HC32, CD54/74HCT32

CD54/74HC32, CD54/74HCT32 Data sheet acquired from Harris Semiconductor SCHS7A September 997 - Revised May 000 CD/7HC, CD/7HCT High Speed CMOS Logic Quad -Input OR Gate [ /Title (CD HCT, CD7 HC, CD7 HCT ) /Subject High Features

More information

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level

More information

SGM nA, Non-Unity Gain, Dual Rail-to-Rail Input/Output Operational Amplifier

SGM nA, Non-Unity Gain, Dual Rail-to-Rail Input/Output Operational Amplifier PRODUCT DESCRIPTION The SGM8046 operates with a single supply voltage as low as 1.4V, while drawing less than 670nA (TYP) of quiescent current per amplifier. This device is also designed to support rail-to-rail

More information

The 74LVC1G11 provides a single 3-input AND gate.

The 74LVC1G11 provides a single 3-input AND gate. Rev. 0 September 200 Product data sheet 1. General description 2. Features The is a high-performance, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. The input

More information

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device. 74HC1G09 Rev. 02 18 December 2007 Product data sheet 1. General description 2. Features 3. Ordering information The 74HC1G09 is a high-speed Si-gate CMOS device. The 74HC1G09 provides the 2-input ND function

More information

CD74HC151, CD74HCT151

CD74HC151, CD74HCT151 Data sheet acquired from Harris Semiconductor SCHS150 September 1997 CD74HC151, CD74HCT151 High Speed CMOS Logic 8-Input Multiplexer [ /Title (CD74H C151, CD74H CT151) /Subject High peed MOS ogic 8- nput

More information

CD54/74HC164, CD54/74HCT164

CD54/74HC164, CD54/74HCT164 Data sheet acquired from Harris Semiconductor SCHS155A October 1997 - Revised May 2000 CD54/74HC164, CD54/74HCT164 High Speed CMOS Logic 8-Bit Serial-In/Parallel-Out Shift Register Features Description

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic

More information

Dielectric Analysis of Insulation Liquids

Dielectric Analysis of Insulation Liquids using Liquid Test Fixture 16451A from Keysight By Britta Pfeiffer 2018 by OMICRON Lab V1.0 Visit www.omicron-lab.com for more information. Contact support@omicron-lab.com for technical support. Page 2

More information

74AUP1G59 TinyLogic Low Power Universal Configurable Two-Input Logic Gate (Open Drain Output)

74AUP1G59 TinyLogic Low Power Universal Configurable Two-Input Logic Gate (Open Drain Output) 74UP1G9 TinyLogic Low Power Universal onfigurable Two-Input Logic Gate (Open Drain Output) Features 0.8V to.v V Supply Operation.V Over-Voltage Tolerant I/Os at V from 0.8V to.v Extremely High Speed tpd

More information

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching. M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

More information

DATA SHEET Metal Element Current Sensing Chip Resistor (Jumper) CLS Series

DATA SHEET Metal Element Current Sensing Chip Resistor (Jumper) CLS Series DATA SHEET Metal Element Current Sensing Chip Resistor (Jumper) 5% SIZE: 0805,1206 & 2512 RoHs Compliant January 19, 2017 V.5 DS-ENG-009 Page: 2 of 14 1. SCOPE 1.1 This specification is applicable to lead

More information

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75) M3D73 Rev. 3 March 24 Product data. Product profile. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology..2 Features Surface mounted package Low

More information

74HC1G125; 74HCT1G125

74HC1G125; 74HCT1G125 Rev. 05 23 December 2005 Product data sheet 1. General description 2. Features 3. Quick reference data The is a high-speed, Si-gate CMOS device. The provides one non-inverting buffer/line driver with 3-state

More information

ISA-PLAN // Precision resistors. SMS // Size Features

ISA-PLAN // Precision resistors. SMS // Size Features Features 5 W power rating at 70 C Constant current up to 25 A (5 mohm) excellent long-term stability High pulse power rating Mounting: Reflow-, and IR-soldering AEC-Q200 qualified rohs 20/65/EU compliant

More information

DS Tap Silicon Delay Line FEATURES PIN ASSIGNMENT. PIN DESCRIPTION TAP 1 TAP 5 TAP Output Number +5 Volts

DS Tap Silicon Delay Line FEATURES PIN ASSIGNMENT. PIN DESCRIPTION TAP 1 TAP 5 TAP Output Number +5 Volts DS00 -Tap Silicon Delay Line FEATURES All-silicon time delay taps equally spaced Delay tolerance ± ns or ±%, whichever is greater Stable and precise over temperature and voltage range Leading and trailing

More information

AOZ Ω Low-Voltage Dual-DPDT Analog Switch

AOZ Ω Low-Voltage Dual-DPDT Analog Switch 0.3Ω Low-Voltage Dual-DPDT nalog witch General Description The OZ6274 is a dual Double-Pole, Double-Throw (DPDT) analog switch that is designed to operate from a single 1.65V to 4.3V supply. The OZ6274

More information

Dielectric Analysis of Solid Insulations

Dielectric Analysis of Solid Insulations using Dielectric Test Fixture 16451B from Keysight By Britta Pfeiffer 2018 by OMICRON Lab V2.0 Visit www.omicron-lab.com for more information. Contact support@omicron-lab.com for technical support. Page

More information

Digital Electronics Part II - Circuits

Digital Electronics Part II - Circuits Digital Electronics Part - Circuits Dr.. J. Wassell Gates from Transistors ntroduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits The

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1. M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.

More information

CD74HC165, CD74HCT165

CD74HC165, CD74HCT165 Data sheet acquired from Harris Semiconductor SCHS156 February 1998 CD74HC165, CD74HCT165 High Speed CMOS Logic 8-Bit Parallel-In/Serial-Out Shift Register Features [ /Title (CD74H C165, CD74H CT165) /Subject

More information

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS DESCRIPTION The / optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline

More information

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)

More information

RS INDUSTRY LIMITED. RS Chip Single ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D

RS INDUSTRY LIMITED. RS Chip Single ESD Suppressor APPROVAL SHEET. Customer Information. Part No. : Model No. : COMPANY PURCHASE R&D APPROVAL SHEET Customer Information Customer : Part Name : Part No. : Model No. : COMPANY PURCHASE R&D Vendor Information Name: Part Name RS INDUSTRY LIMITED Chip ESD Part No. RS 0402-5V500S Lot No. PART

More information

Conventional Paper-I-2011 PART-A

Conventional Paper-I-2011 PART-A Conventional Paper-I-0 PART-A.a Give five properties of static magnetic field intensity. What are the different methods by which it can be calculated? Write a Maxwell s equation relating this in integral

More information

Requirements to perform accurate dielectric material analysis

Requirements to perform accurate dielectric material analysis Requirements to perform accurate dielectric material analysis By Britta Pfeiffer 2017 by OMICRON Lab V1.0 Visit www.omicron-lab.com for more information. Contact support@omicron-lab.com for technical support.

More information

NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset

NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset Description: The NTE74HC109 is a dual J K flip flip with set and reset in a 16 Lead plastic DIP

More information

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and

More information

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers.

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers. Rev. 01 6 October 2006 Product data sheet 1. General description 2. Features 3. Ordering information The is a high-speed Si-gate CMOS device. The provides two buffers. Wide supply voltage range from 2.0

More information

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET M3D32 Rev. 1 13 November 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

More information

The 74LV08 provides a quad 2-input AND function.

The 74LV08 provides a quad 2-input AND function. Quad 2-input ND gate Rev. 03 6 pril 2009 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC0

More information

c. VH: Heating voltage between the collector and emitter.

c. VH: Heating voltage between the collector and emitter. TERMAL IMPEDANCE MEASUREMENTS FOR INSULATED GATE BIPOLAR TRANSISTORS (DELTA GATE-EMITTER ON VOLTAGE METOD) 1. Purpose. The purpose of this test method is to measure the thermal impedance of the IGBT under

More information

Chip tantalum capacitors (Fail-safe open structure type)

Chip tantalum capacitors (Fail-safe open structure type) TCFG0J106M8R Chip tantalum capacitors (Fail-safe open structure type) TCFG Series Case Features 1) Safety design by open function built - in. 2) Wide capacitance range 3) Screening by thermal shock. Dimensions

More information

CPC3730CTR. 350V N-Channel Depletion-Mode FET (SOT-89) INTEGRATED CIRCUITS DIVISION

CPC3730CTR. 350V N-Channel Depletion-Mode FET (SOT-89) INTEGRATED CIRCUITS DIVISION V (BR)DSX / V (BR)DGX R DS(on) (max) I DSS (min) Package 35V P 3 14mA SOT-89 Features Low R DS(on) at Cold Temperatures R DS(on) 3 max. at 25ºC High Input Impedance High Breakdown Voltage: 35V P Low (off)

More information

AOZ6115 High Performance, Low R ON, SPST Analog Switch

AOZ6115 High Performance, Low R ON, SPST Analog Switch OZ6115 High Performance, Low R ON, PT nalog witch General Description The OZ6115 is a high performance single-pole single-throw (PT), low power, TTL-compatible bus switch. The OZ6115 can handle analog

More information

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation

More information

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT T4H40,40P/F/FT,40P/F/FN/FT TOSHI MOS Digital Integrated ircuit Silicon Monolithic T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FN,T4H40FT T4H40P/F/FT 8-hannel nalog Multiplexer/Demulitiplexer

More information

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02. Rev. 04 11 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G02 and 74HCT1G02 are high speed Si-gate CMOS devices. They provide a 2-input NOR function. The HC

More information

EXEMPLAR NATIONAL CERTIFICATE (VOCATIONAL) ELECTRICAL PRINCIPLES AND PRACTICE NQF LEVEL 3 ( ) (X-Paper) 09:00 12:00

EXEMPLAR NATIONAL CERTIFICATE (VOCATIONAL) ELECTRICAL PRINCIPLES AND PRACTICE NQF LEVEL 3 ( ) (X-Paper) 09:00 12:00 NATIONAL CERTIFICATE (VOCATIONAL) ELECTRICAL PRINCIPLES AND PRACTICE NQF LEVEL 3 2008 (12041002) (X-Paper) 09:00 12:00 EXEMPLAR This question paper consists of 7 pages. EXEMPLAR -2- NC(V) TIME: 3 HOURS

More information

An Introduction to Insulation Resistance Testing

An Introduction to Insulation Resistance Testing An Introduction to Insulation Resistance Testing In a perfect world, electrical insulation would allow no current to flow through it. Unfortunately, a number of factors can over time result in the deterioration

More information

SIPMOS Small-Signal Transistor BSP 149

SIPMOS Small-Signal Transistor BSP 149 SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking

More information

Advancements in mm-wave On-Wafer Measurements: A Commercial Multi-Line TRL Calibration Author: Leonard Hayden Presenter: Gavin Fisher

Advancements in mm-wave On-Wafer Measurements: A Commercial Multi-Line TRL Calibration Author: Leonard Hayden Presenter: Gavin Fisher Advancements in mm-wave On-Wafer Measurements: A Commercial Multi-Line TRL Calibration Author: Leonard Hayden Presenter: Gavin Fisher The title of this section is A Commercial Multi-Line TRL Calibration

More information

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86. Rev. 04 20 July 2007 Product data sheet 1. General description 2. Features 3. Ordering information 74HC1G86 and 74HCT1G86 are high-speed Si-gate CMOS devices. They provide a 2-input EXCLUSIVE-OR function.

More information

TrenchMOS ultra low level FET

TrenchMOS ultra low level FET M3D32 Rev. 1 27 September 22 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT457 (TSOP6). 2.

More information

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1. M3D88 Rev. 2 24 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology

More information

The 74LV32 provides a quad 2-input OR function.

The 74LV32 provides a quad 2-input OR function. Rev. 03 9 November 2007 Product data sheet. General description 2. Features 3. Ordering information The is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC32 and 74HCT32.

More information

STATEWIDE CAREER/TECHNICAL EDUCATION COURSE ARTICULATION REVIEW MINUTES

STATEWIDE CAREER/TECHNICAL EDUCATION COURSE ARTICULATION REVIEW MINUTES STATEWIDE CAREER/TECHNICAL EDUCATION COURSE ARTICULATION REVIEW MINUTES Articulation Agreement Identifier: _ELT 107/ELT 108 (2011-1) Plan-of-Instruction version number (e.g.; INT 100 (2007-1)). Identifier

More information

Cut-and-Paste Organic FET Customized ICs for Application to Artificial Skin

Cut-and-Paste Organic FET Customized ICs for Application to Artificial Skin Cut-and-Paste Organic FET Customized ICs for Application to Artificial Skin Takao Someya 1, Hiroshi Kawaguchi 2, Takayasu Sakurai 3 1 School of Engineering, University of Tokyo, Tokyo, JAPAN 2 Institute

More information

SGM7SZ32 Small Logic Two-Input OR Gate

SGM7SZ32 Small Logic Two-Input OR Gate Preliminary Datasheet GENERL DESCRIPTION The is a single two-input OR gate from SGMICRO's Small Logic series. The device is fabricated with advanced CMOS technology to achieve ultra-high speed with high

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT DESCRIPTION The U74AUC1G126 is single bus buffer gate with 3-state output. The output is disabled When the output enable (OE) is

More information

Maintenance/ Discontinued

Maintenance/ Discontinued Video Camera LSI MN31121SA CCD Image Sensor Vertical Driver IC Overview The MN31121SA is a 2D interline CCD image sensor vertical driver IC that integrates four vertical driver channels and one SUB drive

More information

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors

LH1532AAC/ AACTR/ AB. Pb Pb-free. Dual 1 Form A Solid State Relay. Vishay Semiconductors Dual 1 Form A Solid State Relay Features Dual Channel (LH15) Current Limit Protection Isolation Test Voltage 53 V RMS Typical R ON Ω Load Voltage 35 V High Surge Capability Clean Bounce Free Switching

More information

Model 4210-CVU Applications Training

Model 4210-CVU Applications Training Model 4210-CVU Applications Training Mark Walter Updated May, 2015 1 A G R E A T E R M E A S U R E O F C O N F I D E N C E Copyright 2004 Keithley Instruments, Inc. 4210-CVU Applications Training Agenda

More information

PHP7NQ60E; PHX7NQ60E

PHP7NQ60E; PHX7NQ60E Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very

More information

CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238

CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238 Data sheet acquired from Harris Semiconductor SCHS147C October 1997 - Revised August 2001 CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238 High Speed CMOS Logic 3-to-8 Line Decoder/ Demultiplexer

More information

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch

AOZ6135 High Performance, Low R ON, 1Ω SPDT Analog Switch OZ6135 High Performance, Low R ON, 1Ω PDT nalog witch General Description The OZ6135 is a high performance single-pole double-throw (PDT), low power, TTL-compatible bus switch. The OZ6135 can handle analog

More information

High Ohmic/High Voltage Resistors

High Ohmic/High Voltage Resistors High Ohmic/High Voltage Resistors VR68 A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded

More information

CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368

CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 CD/HC, CD/HCT, CD/HC, CDHCT Data sheet acquired from Harris Semiconductor SCHSD November - Revised October 00 High-Speed CMOS Logic Hex Buffer/Line Driver, Three-State Non-Inverting and Inverting [ /Title

More information

Series LPS Low Ohmic Power Standard Resistors current sensor

Series LPS Low Ohmic Power Standard Resistors current sensor eries LP Low Ohmic Power tandard Resistors current sensor pecifications Type tyle *LP 355-0, LP 356-0, LP 357-1 special varieties LP 359 - xxx Existing styles upon request Power rating P 70 W Depends on

More information

74VHC08; 74VHCT08. The 74VHC08; 74VHCT08 provide the quad 2-input AND function.

74VHC08; 74VHCT08. The 74VHC08; 74VHCT08 provide the quad 2-input AND function. Rev. 0 30 June 2009 Product data sheet. General description 2. Features 3. Ordering information The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They

More information

High-ohmic/high-voltage resistors

High-ohmic/high-voltage resistors FEATURES These resistors meet the safety requirements of: UL1676 (range 510 kω to 11 MΩ) EN60065 BS60065 (U.K.) NFC 92-130 (France) VDE 0860 (Germany) High pulse loading capability Small size. APPLICATIONS

More information

N-Channel Enhancement-Mode Vertical DMOS FET

N-Channel Enhancement-Mode Vertical DMOS FET N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral

More information