HYSWITCH Informal meeting Chersonissos - Crete September 15th 19th 2007,
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1 HYSWITCH Informal meeting Chersonissos - Crete September 15th 19th 27, Scuola Normale Superiore & NEST CNR-INFM I Pisa, Italy F. Carillo I. Batov G. Biasiol F. Deon F. Dolcini F. Giazotto V. Pellegrini L. Sorba R. Fazio F. Beltram
2 2nd year Deliverables D2.2.3 Fabbrication and measurement of Quantum Dot in In.75Ga.25As heterostructures. Target specs: ΔE, U ~ 1 mev; good device stability on ~ 1h scale. D2.2.4 Fabrication of Josephson field effect transistors based on In.75Ga.25As heterostructures. Target specs: supercurrent tunable between (off state) and a few na,up to tens of na (on-state); Supercurrents below ~1nA D2.2.5 Characterization of optimized JDOT devices based on In.75Ga.25As heterostructures Month 16 Month 2 Month 12
3 Criticism and advises in 1st year evaluation 1. Heterostructures In.75Ga.25As / In.75Al.25As or In.75Ga.25As / InAs / In.75Al.25As? we have grown and evaluated both configuration and chose to go ahead with the first one 1.Andreev reflection obvious for us from graphs and Josephson effect but not explicitly stated! 1.Strengthen efforts on InGaAs J-Dot man power has been increased and crucial results already obtained
4 In.75Ga.25As- In.75Al.25As Or In.75Ga.25As- InAs- In.75Al.25As? MBE growth unintentionally doped n 3 x K µ 2 x K lm ~ 1.8 µm m* =.39 me D2.2.2 Quantum Hall Effect F. Capotondi et al., J. Vac. Sci. Technol. B 22, 72 (24); F. Capotondi et al., Thin Solid Films 484, 4 (25); W. Desrat et al., Phys. Rev. B 69, (24); W. Desrat et al., Phys. Rev. B 71, (25). 1nm In.75Ga.25As cap 12nm In.75Al.25As 1nm In.75Ga.25As QW 5nm In.75Al.25As 1.2µ m InxAl1-xAs graded buffer,.15 = x =.85 GaAs (1) substrate
5 D2.2.2 Nb/InGaAs junctions Andreev Reflection Tc ~ K 2DEG Nb V Side view I InGaAs Nb 1.µA 11 w = 2 µm.92 mv 8.µA 6.µA 1 4.µA Conductace [1/K Ω ] Top View Z ~ µA 9.A 1.1 mv 8-2.µA T ~ 55% 8% -4.µA 7 4.2K 2K 24mK Voltage [mv] µA -8.µA -1.µA Rs = 2 kω µm RA = 5 Ω µm2
![µA -1-5 Voltage [µ V] D2.](/docs-images/74/70843227/images/6-1.jpg "2.5 JDOT Final Goal c a b QD Source a c Drain b 5 1 15 -.4 -.3 -.")
6 D2.2.3 Quantum Dot on In.75Ga.25As D2.2.4 Josephson field effect transistors 15 1.µA T = 257mK 5.µA 5.A IC Current [ µ A] µA µA -1-5 Voltage [µ V] D2.2.5 JDOT Final Goal c a b QD Source a c Drain b Magnetic Field [ Gauss].3.4
7 D2.2.3 Quantum Dot on In.75Ga.25As Side Gates Configuration on an etched wire Split gates over dielectric (HSQ)
8 D2.2.3 Quantum Dot on In.75Ga.25As max,3,27,24,21,18 Conductance (a.u.),15,12 9,E-4 6,E-4 3,E-4 EC 1meV S-D Bias (V),2 2.1mV 1.15mV α 43meV/V, min -,2 -,48 -,42 -,36 Plunger-Gate Voltage (V) ΔE ~ 1mV U ~ 1mV Measurement time ~ 5h
9 Open issues Measurements at few electrons Measurements in magnetic field and at vs. temperature.
10 D2.2.4 Josephson field effect transistors Three types of Josephson Junctions have been Fabricated and measured
11 IcRn value sample Ref. heida thesis Nitta L /ξ IcRn (µv) T(K) [1] Takayanagi [2] 1.7 Mur [3] Nguyen [4] Chrestin [9]
12 2nm epitaxial layer/1nm Nb 15 T = 257mK 1.µA 5.µA 5.A IC Current [µ A] µA µA -1-5 Voltage [µ V] L = 2nm Ic = 16uA IcRn = 12uV C = 2pF Magnetic Field [Gauss].3.4
13 Retrapping current and nature of the Hysteresis Ic Ir IrRSJ 12.µA 1.µA 4 6.µA 2 C 4.µA β Ic [A] 8.µA 2.µA teorica dev18 in Temperatura Dev4 in Temperatura Dev4 in campo magnetico.a ,6 H [µ T],8 1, α Ic Ir IrRSJ L=4nm Ir IrTeo 1 8.nA 8 6.nA Ic Ic [A] 6 4.nA nA.A H [µ T] T [K] 3 4 5
14 /T * IC [µ A] L [nm] 1 L=2nm L=6 nm L=8nm L=1.1µ m.1 1 We=Wj=2um I=Iexp(-T/T*). Ec=2piKbT*/24 2 Temperature [K] 3 4 5
15 7-2-dev dev9 6-1-dev dev dev4 6-1-dev3 L(nm) Eth da Ic(T) Δ/Eth da Ic(T) ernic/eth da Ic(T) 1,8E ,2 1,4E ,4 6,8E ,18 8,9E ,35 2,2E-5 6 4,29 1,E ,77
16 Type C Junctions semiconductor shape defined before Nb deposition 1.µ Ic3 Ic4 ### ### 5.µ Rn~75Ω IcRn~5 µ V Ic (A) I (A) 1µ. 2.17K 1.7K 1.3K 1.K.6K.4K.25K -5.µ 1n -1.µ -.1. µ H (T).1-5.µ -25.µ. 25.µ 5.µ V (V) higher IcRn products Higher critical current densities Depairing suppression of Ic?? Ic(T) deviates from exponetial Retrapping current do not vary consistently with Ic
17 Giunzioni strette (Wl<1um) dev5 Ic Ir 14 Ic Ir IrRSJ 1,µA 12 Ic 1 Ic,Ir (µ A) 8 5,µA a) dev5,,5 1, 1,5 2, d),a 2,5 -,6 3,,,6 H [T] T (K) dev11 Ic Ir IrRSJ Ic Ir 6,µA 1 Ic Ic,Ir (µ A) 3,µA,A c) 1 -,7, H [T],,5 1, 1,5 2, 2,5 3, T (K) b) dev5,7
18 Nb-Ring-Nb
19 Nb-Ring-Nb 1um 2nm
20 Ic (A) 8.µ 1.K 4.µ 16.µ.25K Ic (A) 12.µ 8.µ 4.µ µ H (mt)
21 Conclusions We managed to use with semiconductors the same S\N\S theory demonstrated in the case of metals We demonstrated that heating and non equilibrium effects do not play a role in large junctions We found a configuration to improve semi\super junctions performances in terms of current densities and IcRn product. We observed supercurrent modulation as function of magnetic field trough a 2nm radius semiconductor ring.
22 Open issues and possible collaborations justify the discrepancy between Ec calculated from Ic(T) and that calculated from mobility and charge density data estimated from hall measurements on the bare epylayer role of barrier transparency in Ec renormalization? Temperature and Magnetic field phenomenology of type C junction is still not clear. Nature of hysteresis in Ic(H) in super-ring-super devices. Implement gates and superconducting contact on the same device Jo-Fet
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