Precision CMOS Analog Switches

Transcription

1 Precision MO Analog witches G417, G418, G419 ERIPTION The G417, G418, G419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages, high speed, low on-resistance and small physical size, the G417 series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, the G417 series is built on s high voltage silicon gate (HVG) process. Break-beforemake is guaranteed for the G419, which is an PT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The G417 and G418 respond to opposite control logic levels as shown in the Truth Table. FEATURE ± 1 V analog signal range On-resistance - R (on) : Fast switching action - t ON : 1 ns Ultra low power requirements - P : 3 nw TTL and MO compatible MiniIP and OI packaging 44 V supply max. rating 44 V supply max. rating ompliant to RoH directive 2/9/E BENEFIT Wide dynamic range Low signal errors and distortion Break-before-make switching action imple interfacing Reduced board space Improved reliability APPLIATION Precision test equipment Precision instrumentation Battery powered systems ample-and-hold circuits Military radios Guidance and control systems Hard disk drives FUNTIONAL BLOK IAGRAM AN P ONFIGURATION G417 ual-in-line and OI 8 N 2 7 GN TRUTH TABLE Logic G417 G418 ON OFF 1 OFF ON Logic "".8 V Logic "1" 2.4 V Top View G419 ual-in-line and OI GN TRUTH TABLE G419 Logic W 1 W 2 Logic "".8 V Logic "1" 2.4 V ON OFF 1 OFF ON Top View * Pb containing terminations are not RoH compliant, exemptions may apply ocument Number: 71 1

2 G417, G418, G419 ORERG FORMATION Temp. Range Package Part Number G417, G418 G419-4 to 8-4 to 8 8-Pin Plastic MiniIP 8-Pin Narrow OI 8-Pin Plastic MiniIP 8-Pin Narrow OI G417J G417J-E3 G418J G418J-E3 G417Y G417Y-E3 G417Y-T1 G417Y-T1-E3 G418Y G418Y-E3 G418Y-T1 G418Y-T1-E3 G419J G419J-E3 G419Y G419Y-E3 G419Y-T1 G419Y-T1-E3 ABOLUTE MAXIMUM RATG Parameter (Voltages referenced to ) Limit Unit 44 GN 2 (GN -.3) to () +.3 igital Inputs a () - 2 to () + 2, V, V or 3 ma, whichever occurs first urrent, (Any Terminal) ontinuous 3 urrent, or (Pulsed at 1 ms, 1 % uty ycle) 1 torage Temperature (AK uffix) - 6 to 1 (J, Y uffix) - 6 to 12 Power issipation (Package) b 8-Pin Narrow OI d 4 mw 8-Pin Plastic MiniIP c 4 8-Pin erip e 6 Notes: a. ignals on X, X, or X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P board. c. erate 6 mw/ above 7. d. erate 6. mw/ above 7. e. erate 12 mw/ above 7. V ma 2 ocument Number: 71

3 G417, G418, G419 HEMATI IAGRAM Typical hannel V Level hift/ rive GN Figure 1. PEIFIATION a Parameter ymbol Test onditions Unless Otherwise pecified = 1 V, = = V, V = 2.4 V,.8 V f Temp. b Typ. c A uffix - to 12 uffix - 4 to 8 Min. d Max. d Min. d Max. d Analog witch Analog ignal Range e V ANALOG V rain-ource On-Resistance witch Off Leakage urrent hannel Off Leakage urrent R (on) I (off) I (off) I (on) I = - 1 ma, V = ± 12. V = 13. V, = V = 16., = V V = ± 1. V V = ± 1. V = 16. V, = V V = V = ± 1. V G417 G418 G419 G417 G418 G igital ontrol Input urrent V Low I IL Input urrent V High I IH ynamic haracteristics R Turn-On Time t L = 3, L = 3 pf G417 ON V = ± 1 V G418 ee witching Time G417 Turn-Off Time t OFF Test ircuit G418 = 3, L = 3 pf Transition Time t TRAN V 1 = ± 1 V, V 2 = ± 1 V G419 Break-Before-Make = 3, L = 3 pf t Time elay (G43) V 1 = V 2 = ± 1 V G harge Injection Q L = 1 nf, V gen = V, R gen = 6 p Unit na µa ns ocument Number: 71 3

4 G417, G418, G419 PEIFIATION a Parameter ymbol Test onditions Unless Otherwise pecified = 1 V, = = V, V = 2.4 V,.8 V f Temp. b Typ. c A uffix - to 12 ynamic haracteristics ource Off apacitance (off) 8 f = 1 MHz, V = V G417 rain Off apacitance (off) 8 G418 G417 hannel On 3 apacitance (on) f = 1 MHz, V = V G418 G419 3 Power upplies.1 1 Positive upply urrent I+ Negative upply urrent I- = 16. V, = V Logic upply urrent I L V = or V Ground urrent I GN uffix - 4 to 8 Min. d Max. d Min. d Max. d Unit pf µa PEIFIATION a for Unipolar upplies Test onditions Unless Otherwise pecified = 12 V, = V Parameter ymbol = V, V = 2.4 V,.8 V f Temp. b Typ. c A uffix - to 12 uffix - 4 to 8 Min. d Max. d Min. d Max. d Analog witch Analog ignal Range e V ANALOG V rain-ource On-Resistance R (on) I = - 1 ma, V = 3.8 V = 1.8 V ynamic haracteristics Turn-On Time t ON = 3, L = 3 pf, V = 8 V 11 Turn-Off Time t OFF ee witching Time Test ircuit 4 Break-Before-Make Time elay t G419 Only = 3, L = 3 pf harge Injection Q L = 1 nf, V gen = V, R gen = p Power upplies Positive upply urrent I+.1 Negative upply urrent I- = 13.2 V, =.2 V -.1 Logic upply urrent I L V = or V.1 µa Ground urrent I GN -.1 Notes: a. Refer to Process Option Flowchart. b. = 2, = as determined by the operating temperature suffix. c. Typical values are for EIGN AI ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V = input voltage to perform proper function. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Unit 4 6 ns 4 ocument Number: 71

5 G417, G418, G419 TYPIAL HARATERITI 2, unless otherwise noted 4 I = - 1 ma ± V 4 3 T A = 12 ± 8 V R (on) ( ) 3 ± 1 V ± 12 V ± 1 V R (on) ( ) 2-1 ± V V - rain Voltage (V) R (on) vs. V and upply Voltage V - rain Voltage (V) R (on) vs. Temperature 3 = 1 V = = V 1 = 16. V = V = V V = V L = 1 nf 1 nf 1 G417/418: I (of f), I ( of f) G419: I (off) 1 pf I (pa) - 1 G417/418: I (on) G419: I (off), I (on) Q (p) 1 pf V or V - rain or ource Voltage (V) Leakage urrents vs. Analog Voltage V - ource Voltage (V) rain harge Injection (V) V TH = 7 V 1. = V () Input witching Threshold vs. upply Voltages ocument Number: 71

6 G417, G418, G419 TYPIAL HARATERITI 2, unless otherwise noted 1 1 = 1 V, = = V, V = 3 V Pulse t ON 14 1 G417/418/419 ource 2 t ON, t OFF (ns) t OFF (db) = 1 V = = V G419 ource k 1 k 1 k 1 M 1M 1M Temperature ( ) witching Time vs. Temperature f - Frequency (Hz) rosstalk and Off Isolation vs. Frequency t ON, t OFF (ns) 7 6 = V = V V = 3 V t ON t ON, t OFF (ns) = V = V V = 3 V t ON t OFF 6 4 t OFF 4 ± 1 ± 11 ± 12 ± 13 ± 14 ± 1 ± 16 upply V oltage (V) witching Time vs. upply Voltages upply V oltage (V) witching Time vs. 1 ma 1 ma = 1 V, = = V, V = V, % -ycle 1 µa 1 na = 16. V, = V = V, V = V I UPPLY 1 µa 1 µa I+, I- I UPPLY 1 na 1 na 1 pa I+, I- 1 µa I L 1 pa 1 pa I GN 1 na 1 1 k 1 k 1 k 1M 1M f - Frequency (Hz) Power upply urrents vs. witching Frequency.1 pa Temperature ( ) upply urrent vs. Temperature 6 ocument Number: 71

7 G417, G418, G419 TET IRUIT is the steady state output with the switch on. ± 1 V GN 3 L 3 pf Logic Input witch Input 3 V V V % 9 % t r < ns t f < ns t OFF witch Output V t ON L (includes fixture and stray capacitance) = V + r (on) Note: Figure 2. witching Time (G417, G418) Logic input waveform is inverted for switches that have the opposite logic sense. Logic Input 3 V t r < ns t f < ns V 1 V V L 3 pf V 1 = V 2 9 % GN witch Output V t t L (includes fixture and stray capacitance) Figure 3. Break-Before-Make (G419) V 1 Logic Input 3 V V % t r < ns t f < ns V L 3 pf V 1 V 1 t TRAN t TRAN 9 % GN witch Output V 2 V 2 1 % L (includes fixture and stray capacitance) = V + r (on) Figure 4. Transition Time (G419) ocument Number: 71 7

8 G417, G418, G419 TET IRUIT R g 3 V GN L 1 nf X OFF ON Q = x L OFF Figure. harge Injection V R g = V R g = 2 V, 2.4 V.8 V GN GN V X TA LK Isolation = log = RF bypass Figure 6. rosstalk (G419) Off Isolation = log Figure 7. Off Isolation V V R g = V, 2.4 V GN Figure 8. Insertion Loss 8 ocument Number: 71

9 G417, G418, G419 TET IRUIT N V, 2.4 V G417/418 Meter HP4192A Impedance Analyzer or Equivalent V, 2.4 V 2 G Meter HP4192A Impedance Analyzer or Equivalent GN f = 1 MHz GN f = 1 MHz Figure 9. ource/rain apacitances APPLIATION witched ignal Powers Analog witch The analog switch in Figure 1 derives power from its input signal, provided the input signal amplitude exceeds 4 V and its frequency exceeds 1 khz. This circuit is useful when signals have to be routed to either of two remote loads. Only three conductors are required: one for the signal to be switched, one for the control signal and a common return. A positive input pulse turns on the clamping diode 1 and charges 1. The charge stored on 1 is used to power the chip; operation is satisfactory because the switch requires less than 1 µa of stand-by supply current. Loading of the signal source is imperceptible. The G419 s on-resistance is a low 1 for a V input signal µf Input UT 2 ontrol 2 1 k GN G k Figure 1. witched ignal Powers Remote PT Analog witch ocument Number: 71 9

10 G417, G418, G419 APPLIATION Micropower UP Transfer witch When V drops to 3.3 V, the G417 changes states, closing W 1 and connecting the backup cell, as shown in Figure 1. 1 prevents current from leaking back towards the rest of the circuit. urrent consumption by the MO analog switch is around 1 pa; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of A are sufficient to retain memory data. When the V supply comes back up, the resistor divider senses the presence of at least 3. V, and causes a new change of state in the analog switch, restoring normal operation. Programmable Gain Amplifier The G419, as shown in figure 11, allows accurate gain selection in a small package. witching into virtual ground reduces distortion caused by R (on) variation as a function of analog signal amplitude. GaAs FET river The G419, as shown in figure 12 may be used as a GaAs FET driver. It translates a TTL control signal into - 8 V, V level outputs to drive the gate. V ( V) 1 R 1 43 k V ENE Memory W 1 G i ell R k GN Figure 11. Micropower UP ircuit G419 2 R 1 R 2 GaAs FET 2 UT V G419 V - GN UT + Figure 12. Programmable Gain Amplifier - 8 V Figure 13. GaAs FET river maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?71. 1 ocument Number: 71

11 Legal isclaimer Notice Vishay isclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. ustomers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. ocument Number: 91 Revision: 18-Jul-8 1