16, Low Parasitic Capacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches

Transcription

1 16, Low Parasitic apacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches DESRIPTION The DG411LE, DG412LE, and DG413LE are monolithic quad singlepolesinglethrow analog switches. The DG411LE and DG412LE differ only in that they respond to opposite logic levels. The DG413LE has two normally open and two normally closed switches. It can be given various configurations, including four SPST, two SPDT, and one DPDT. The DG411LE, DG412LE, and DG413LE offer low on resistance of 16, low parasitic capacitance of 15 pf switch on capacitance, and low charge injection over the signal swing range. The DG411LE, DG412LE, and DG413LE operate on single and dual supplies. Single supply voltage ranges from 3 V to 16 V while dual supply operation is recommended with ± 3 V to ± 8 V. Each switch conducts equally well in both direction when on, and blocks input voltages up to the supply levels when off. The DG411LE, DG412LE, and DG413LE are available in 16 lead TSSOP, SOI, and PDIP packages. FEATURES 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply Available Onresistance R DS(on) : 16 Low parasitic capacitance: Available D(ON) : 15 pf S(OFF) : 5 pf Less than 8 p charge injection over the full signal swing range Fast switching t ON : 16 ns t OFF : 9 ns TTL, MOS compatible Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHScompliant and / or parts that are nonrohscompliant. For example, parts with lead (Pb) terminations are not RoHScompliant. Please see the information / tables in this datasheet for details. BENEFITS Wide operation voltage range Low signal errors and distortion Fast switching time Minimized switching glitch APPLIATIONS Automatic test equipment Data acquisition systems Meters and instruments Medical and healthcare systems ommunication systems Audio and video signal routing Relay replacement Battery powered systems omputer peripherals Audio and video signal routing FUNTIONAL BLOK DIAGRAM AND PIN ONFIGURATION DG411LE, DG412LE DualInLine, TSSOP and SOI DG413LE DualInLine, TSSOP and SOI IN IN 2 D D 2 S S 2 V 4 13 GND 5 12 V L S S 3 D 4 7 D 3 IN IN 3 Top View IN IN 2 D D 2 S S 2 V 4 13 GND 5 12 V L S S 3 D 4 7 D 3 IN IN 3 Top View S16391Rev. A, 7Mar16 1 Document Number: 7891

2 TRUTH TABLE LOGI DG411LE DG412LE ON OFF 1 OFF ON Logic.8 V Logic V TRUTH TABLE LOGI SW 1, SW 4 SW 2, SW 3 OFF ON 1 ON OFF Logic.8 V Logic V ORDERING INFORMATION TEMP. RANGE ONFIGURATION PAKAGE PART NUMBER MIN. ORDER / PAK. QUANTITY 4 to +85 Leadfree DG411LE DG412LE DG413LE 16pin TSSOP DG411LEDQGE3 DG411LEDQT1GE3 Tube 36 units Tape and reel, 3 units DG411LEDYGE3 Tube 5 units 16pin SOI DG411LEDYT1GE3 Tape and reel, 25 units 16pin PDIP DG411LEDJGE3 Tube 5 units 16pin TSSOP DG412LEDQGE3 DG412LEDQT1GE3 Tube 36 units Tape and reel, 3 units DG412LEDYGE3 Tube 5 units 16pin SOI DG412LEDYT1GE3 Tape and reel, 25 units 16pin PDIP DG412LEDJGE3 Tube 5 units 16pin TSSOP DG413LEDQGE3 DG413LEDQT1GE3 Tube 36 units Tape and reel, 3 units DG413LEDYGE3 Tube 5 units 16pin SOI DG413LEDYT1GE3 Tape and reel, 25 units 16pin PDIP DG413LEDJGE3 Tube 5 units ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT to V.3 to +18 GND to V 18 V L (GND.3) to () +.3 I a.3 to () +.3 N, V S, V D or 3 ma, whichever occurs first ontinuous urrent (Any terminal) 3 Peak urrent, S or D (Pulsed 1 ms, % duty cycle) Storage Temperature (DQ, DY suffix) 65 to +125 (AK suffix) 65 to +15 Power Dissipation (Packages) b 16pin SOI d 65 mw 16pin TSSOP c 45 16pin erdip e 9 ESD Human Body Model (HBM); per ANSI / ESDA / JEDE JS1 25 V Latch Up urrent, per JESD78D 4 ma Notes a. Signals on S X, D X, or IN X exceeding or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P board. c. Derate 7 mw/ above 75. d. Derate 7.6 mw/ above 75 e. Derate 12 mw/ above 75. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V ma S16391Rev. A, 7Mar16 2 Document Number: 7891

3 SPEIFIATIONS a (Single Supply 12 V) TEST ONDITIONS UNLESS OTHERWISE SPEIFIED = 12 V, V = V V L = 5 V, V IN = 2.4 V,.8 V f A SUFFIX LIMITS 55 to +125 D SUFFIX LIMITS 4 to +85 UNIT PARAMETER SYMBOL TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e V ANALOG Full V DrainSource OnResistance Switch Off Leakage urrent hannel On Leakage urrent Digital ontrol R DS(on) =.8 V, V = V I S = ma, V D = 2/9 V Room Full 4 35 Room I S(off) Full V D = 1/11 V, V S = 11/1 V Room I D(off) Full I D(on) V S = V D = 11/1 V Room Full Input urrent, VIN Low I IL V IN under test =.8 V Full Input urrent, VIN High I IH V IN under test = 2.4 V Full Dynamic haracteristics TurnOn Time t ON R L = 3, L = 35 pf, Room Full TurnOff Time t OFF V S = 5 V, see figure 2 Room Full 48 4 BreakBeforeMake Time Delay t D DG413L only, V S = 5 V, R L = 3, L = 35 pf Room 5 harge Injection e Q V g = V, R g =, L = nf Room 6.6 p OffIsolation e OIRR Room 68.4 hanneltohannel R L = 5, L = 5 pf, f = 1 MHz db rosstalk e X TALK Room 114 Source Off apacitance e S(off) Room 5 Drain Off apacitance e D(off) f = 1 MHz Room 6 pf hannelon apacitance e D(on) Room 15 Power Supplies Positive Supply urrent I+ Room Full Room Negative Supply urrent I Full V IN = V or 5 V Room Logic Supply urrent I L Full Room Ground urrent I GND Full Notes a. Refer to PROESS OPTION FLOWHART. b. Room = 25, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. na μa ns μa S16391Rev. A, 7Mar16 3 Document Number: 7891

4 SPEIFIATIONS a (Dual Supply ± 5 V) TEST ONDITIONS UNLESS OTHERWISE SPEIFIED = 5 V, V = 5 V V L = 5 V, V IN = 2.4 V,.8 V f A SUFFIX LIMITS 55 to +125 D SUFFIX LIMITS 4 to +85 UNIT PARAMETER SYMBOL TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e V ANALOG Full V DrainSource = 5 V, V = 5 V, Room R OnResistance DS(on) I S = ma, V D = ± 3.5 V Full Room I S(off) Switch Off = 5.5, V = 5.5 V, Full Leakage urrent g V D = ± 4.5 V, V S = ± 4.5 V Room I D(off) Full na hannel On = 5.5 V, V = 5.5 V, Room Leakage urrent g I D(on) V S = V D = ± 4.5 V Full Digital ontrol Input urrent, V IN Low e I IL V IN under test =.8 V Full Input urrent, V IN High e I IH V IN under test = 2.4 V Full μa Dynamic haracteristics TurnOn Time e t ON R L = 3, L = 35 pf, Room Full TurnOff Time e t OFF V S = ± 3.5 V, see figure 2 Room Full 5 4 ns BreakBeforeMake Time Delay e t D DG413L only, V S = 3.5 V, R L = 3, L = 35 pf Room 5 harge Injection e Q V g = V, R g =, L = nf Room 5.8 p Off Isolation e OIRR Room 68 hanneltohannel R L = 5, L = 5 pf, f = 1 MHz db rosstalk e X TALK Room 113 Source Off apacitance e S(off) Room 5 Drain Off apacitance e D(off) f = 1 MHz Room 6 pf hannel On apacitance e D(on) Room 14 Power Supplies Positive Supply urrent e I+ Room Full Negative Supply urrent e Room I Full V IN = V or 5 V Logic Supply urrent e Room I L Full Ground urrent e Room I GND Full Notes a. Refer to PROESS OPTION FLOWHART. b. Room = 25, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. μa S16391Rev. A, 7Mar16 4 Document Number: 7891

5 SPEIFIATIONS a (Single Supply 5 V) TEST ONDITIONS UNLESS OTHERWISE SPEIFIED = 5 V, V = V V L = 5 V, V IN = 2.4 V,.8 V f A SUFFIX LIMITS 55 to +125 D SUFFIX LIMITS 4 to +85 UNIT PARAMETER SYMBOL TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e V ANALOG Full 5 5 V DrainSource = 4.5 V, Room OnResistance e R DS(on) I S = 5 ma, V D = 1 V, 3.5 V Full Dynamic haracteristics TurnOn Time e t ON R L = 3, L = 35 pf, Room Hot TurnOff Time e t OFF V S = 3.5 V, see figure 2 Room Hot 55 4 ns BreakBeforeMake Time Delay e t D DG413L only, V S = 3.5 V, R L = 3, L = 35 pf Room 11 harge Injection e Q V g = V, R g =, L = nf Room 3.3 p Power Supplies Positive Supply urrent e I+ Room Hot Negative Supply urrent e Room I Hot V IN = V or 5 V Logic Supply urrent e Room I L Hot Ground urrent e Room I GND Hot Notes a. Refer to PROESS OPTION FLOWHART. b. Room = 25, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. μa S16391Rev. A, 7Mar16 5 Document Number: 7891

6 SPEIFIATIONS a (Single Supply 3 V) TEST ONDITIONS UNLESS OTHERWISE SPEIFIED = 3 V, V = V V L = 3 V, V IN =.4 V, 2. V f A SUFFIX LIMITS 55 to +125 D SUFFIX LIMITS 4 to +85 UNIT PARAMETER SYMBOL TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d Analog Switch Analog Signal Range e V ANALOG Full 3 3 V DrainSource = 2.7 V, V = V, Room R OnResistance DS(on) I S = 5 ma, V D =.5, 2.2 V Full Room I S(off) Switch Off = 3.3, V = V, Full Leakage urrent g V D = 1, 2 V, V S = 2, 1 V Room I D(off) Full na hannel On = 3.3 V, V = V, Room Leakage urrent g I D(on) V S = V D = 1, 2 V Full Digital ontrol Input urrent, V IN Low I IL V IN under test =.4 V Full Input urrent, V IN High I IH V IN under test = 2.4 V Full μa Dynamic haracteristics TurnOn Time t ON R L = 3, L = 35 pf, Room Full TurnOff Time t OFF V S = 1.5 V, see figure 2 Room Full 85 ns BreakBeforeMake Time Delay t D DG413L only, V S = 1.5 V, R L = 3, L = 35 pf Room 24 harge Injection e Q V g = V, R g =, L = nf Room 2 p Off Isolation e OIRR Room 68 hanneltohannel R L = 5, L = 5 pf, f = 1 MHz db rosstalk e X TALK Room 7 Source Off apacitance e S(off) Room 6 Drain Off apacitance e D(off) f = 1 MHz Room 7 pf hannel On apacitance e D(on) Room 15 Notes a. Refer to PROESS OPTION FLOWHART. b. Room = 25, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. S16391Rev. A, 7Mar16 6 Document Number: 7891

7 TYPIAL HARATERISTIS (25, unless otherwise noted) = +3. V T A = 25 I S = ma 22 2 T A = 25 I S = ma R ON OnResistance (Ω) = +5. V = +12. V = +16. V R ON OnResistance (Ω) V± = ± 5. V V± = ± 8. V V D Analog Voltage (V) R DS(on) vs. Drain Voltage (Single Supply) V D Analog Voltage (V) R DS(on) vs. Drain Voltage and Temperature (Single Supply) 3 35 R ON OnResistance (Ω) = +12 V I S = ma R ON OnResistance (Ω) V± = ± 5. V I S = ma V D Analog Voltage (V) V D Analog Voltage (V) R DS(on) vs. Drain Voltage and Temperature Supply urrent vs. Temperature 5 R ON OnResistance (Ω) = +5 V I S = ma I+ Supply urrent (na) = +5.5 V V = V IN = V V D Analog Voltage (V) Temperature ( ) R DS(on) vs. Drain Voltage and Temperature Switching Time vs. Single Supply S16391Rev. A, 7Mar16 7 Document Number: 7891

8 TYPIAL HARATERISTIS (25, unless otherwise noted) 4. 3 = +5 V 9. = 12 V Leakage urrent (pa) I D(ON) I D(OFF) I S(OFF) Q INJ harge Injection (p) V± = ± 5 V = 3V = 5 V V D Drain Voltage (V), V S = V D V D Analog Voltage (V) Leakage urrent vs. Drain Voltage harge Injection vs. Drain Voltage Switching Speed (ns) t ON t OFF Single supply V TH Threshold (V) V L = (for < 5 V) and 5 V ( 5 V) V IH V IL Positive Supply Voltage (V) Positive Supply Voltage (V) Switching Time vs. Single Supply Voltage Threshold vs. Single Supply urrent 3 25 Dual supply D(ON), = +3 V D(ON), = +5 V Single supply D(ON), = +12 V Switching Speed (ns) 2 15 t OFF t ON apacitance (pf) D(OFF), = +3 V D(OFF), = +5 V D(OFF), = +12 V / Positive Supply Voltage (V) Switching Time vs. Dual Supply Voltage 4 S(OFF), = +3 V 2 S(OFF), = +5 V S(OFF), = +12 V Analog Voltage (V) Drain apacitance vs. Drain Voltage (Single Supply) S16391Rev. A, 7Mar16 8 Document Number: 7891

9 TYPIAL HARATERISTIS (25, unless otherwise noted) apacitance (pf) 2 Dual supply D(ON), V± = ± 5 V D(OFF), V± = ± 5 V S(OFF), V± = ± 5 V Analog Voltage (V) Drain apacitance vs. Drain Voltage (Dual Supply) Loss, OIRR, X TALK (db) = +3 V V = V Insertion loss, 3 db = 31 MHz OIRR 12 K 1M M M 1G Frequency (Hz) X TALK Insertion Loss, Off Isolation and rosstalk vs. Frequency SHEMATI DIAGRAM (Typical hannel) S V L V IN Level Shift/ Drive V GND D V Fig. 1 S16391Rev. A, 7Mar16 9 Document Number: 7891

10 TEST IRUITS V S S IN V L V L GND V V D R L 3 Ω L 35 pf Logic Input Switch Input* Switch Output Switch Input* 3 V V V S V 5% t ON 9 % t r < 2 ns t f < 2 ns t ON 9 % V S L (includes fixture and stray capacitance) = V S R L R L + r DS(on) Note: Logic input waveform is inverted for switches that have the opposite logic sense control Fig. 2 Switching Time V L V S1 V S2 S 1 IN 1 S 2 IN 2 GND V D 1 D 2 R L2 3 Ω 2 L2 35 pf R L1 3 Ω L1 35 pf 1 Logic Input Switch Output Switch Output 3 V V V S1 1 V V S2 2 V 5 % 9 % t D 9 % t D V L (includes fixture and stray capacitance) Fig. 3 BreakBeforeMake (DG413LE) V L Δ R g S V L D IN X OFF ON OFF V g 3 V IN GND V L nf IN X OFF ON Q = Δ x L OFF V Fig. 4 harge Injection IN X dependent on switch configuration Input polarity determined by sense of switch. S16391Rev. A, 7Mar16 Document Number: 7891

11 TEST IRUITS V L V S S 1 V L D 1 R g = 5 Ω V, 2.4 V IN 1 5 Ω N S 2 D 2 V, 2.4 V IN 2 R L GND V X TALK Isolation = 2 log = RF bypass V S V Fig. 5 rosstalk V L V L V S R g = 5 Ω S V L D V L S V, 2.4 V IN GND V R L 5 Ω V, 2.4 V IN D Meter HP4192A Impedance Analyzer or Equivalent V GND V Off Isolation = 2 log = RF Bypass V S V Fig. 6 OffIsolation Fig. 7 Source / Drain apacitances maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S16391Rev. A, 7Mar16 11 Document Number: 7891

12 Package Information JEDE Part Number: MS E Dim Min Max Min Max A A B D E e 1.27 BS.5 BS H L EN: S3946 Rev. F, 9Jul1 DWG: 53 D H All Leads e B A1 L.1 mm.4 IN Document Number: Jul1 1

13 Package Information E 1 E D S Q 1 A A 1 L B 1 e 1 B e A 15 MAX Dim Min Max Min Max A A B B D E E e e A L Q S EN: S3946 Rev. D, 9Jul1 DWG: 5482 Document Number: Jul1 1

14 Package Information TSSOP: 16LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A A A B D E E e.65 L L y. θ1 3 6 EN: S6192Rev. D, 23Oct6 DWG: 5624 Document Number: Oct6 1

15 PAD Pattern REOMMENDED MINIMUM PAD FOR TSSOP (4.9).55 (1.4).281 (7.15).171 (4.35).14 (.35).26 (.65).12 (.3) Recommended Minimum Pads Dimensions in inches (mm) Revision: 2Sep11 1 Document Number: 6355

16 Application Note 826 REOMMENDED MINIMUM PADS FOR SO16 REOMMENDED MINIMUM PADS FOR SO (9.449).47 (1.194) APPLIATION NOTE.246 (6.248).152 (3.861).22 (.559).5 (1.27).28 (.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: Revision: 21Jan8

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