LQA20T200C, LQA20N200C Qspeed Family

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Qspeed Family 2 V, 2 A Common-Cathode Diode Product Summary I F(AVG) per diode 1 A V RRM 2 V Q RR (Typ at 12 C) 48.4 nc I RRM (Typ at 12 C) 3.29 A Softness t b/t a (Typ at 12 C).

Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Features TO-22AB LQA2T2C A1 A2 TO-22 DPAK K LQA2N2C RoHS Compliant Package uses

1 Qspeed Family 2 V, 2 A Common-Cathode Diode Product Summary I F(AVG) per diode 1 A V RRM 2 V Q RR (Typ at 12 C) 48.4 nc I RRM (Typ at 12 C) 3.29 A Softness t b/t a (Typ at 12 C).34 Pin Assignment General Description This device has the lowest Q RR of any 2 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Features TO-22AB LQA2T2C A1 A2 TO-22 DPAK K LQA2N2C RoHS Compliant Package uses Lead-free plating and Green mold compound Halogen free per IEC Absolute Maximum Ratings Low Q RR, Low I RRM, Low t RR High di F /dt capable (1A/ s) Soft recovery Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count Enables extremely fast switching Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V RRM Peak repetitive reverse voltage T J = 2 C 2 V I F(AVG) Average forward current Per Diode, T J = 1 C, T C = 124 C 1 A Per Device, T J = 1 C, T C = 124 C 2 A I FSM Non-repetitive peak surge current Per Diode, 6 Hz, ½ cycle 1 A I FSM Non-repetitive peak surge current Per Diode, ½ cycle of t = 28 s Sinusoid, T C = 2 C 3 A T J Operating junction temperature range to 1 C T STG Storage temperature to 1 C Lead soldering temperature Leads at 1.6mm from case, 1 sec 3 C P D Power dissipation T C = 2 C 41.7 W Thermal Resistance Symbol Resistance from: Conditions Rating Units R JA Junction to ambient TO-22AB (only) 62 C/W Per Diode 3. C/W R JC Junction to case Per Device 1. C/W April 213

2 Electrical Specifications at T J = 2 C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units DC Characteristics per diode I R Reverse current per diode V R = 2 V, T J = 2 C - - A V R = 2 V, T J = 12 C ma V F Forward voltage per diode I F = 1 A, T J = 2 C V I F = 1 A, T J = 1 C V C J Junction capacitance per diode V R = 1 V, 1 MHz pf Dynamic Characteristics per diode t RR Q RR I RRM S Reverse recovery time, per diode Reverse recovery charge, per diode Maximum reverse recovery current, per diode Softness per diode = t t b a di F/dt = 2 A/ s V R = 13 V, I F = 1 A di F/dt = 2 A/ s V R = 13 V, I F = 1 A di F/dt = 2 A/ s V R = 13 V, I F = 1 A di F/dt = 2 A/ s V R = 13 V, I F = 1 A T J = 2 C ns T J = 12 C ns T J = 2 C nc T J = 12 C nc T J = 2 C A T J = 12 C A T J = 2 C T J = 12 C Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-3.) VR L1 D1 DUT I F t RR 1V di F/dt t a t b Pulse generator + Rg Q1.1xI RRM I RRM Rev 1. 4/13 2

3 Electrical Specifications at T J = 2 C (unless otherwise specified) I F (A) 2 18 Tj=12C Tj=2C V F (V) I F (A) Tj=12C Tj=2C V F (V) C j (pf) V R (V) I F(AV) (A) Case Temperature, T C ( o C) Q RR (nc) di F /dt=a/us di F /dt=2a/us I F (A) t RR (ns) 3 2 di F /dt=2a/us 2 di F /dt=a/us I F (A) 3 Rev 1. 4/13

4 P (W) Case Temperature, T C ( o C) I F (PEAK) (A) T C ( C) duty cycle=1% duty cycle=3% duty cycle=% DC LQA2x2C 1 D=. D =.3.1 D=.1 Zth(j-c)/Rth(j-c) D=. D=.2 D=.1.1 D=. D=.2 Single Pulse.1 1.E-6 1.E- 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ t1(sec) Rev 1. 4/13 4

5 Dimensional Outline Drawings TO-22AB Q E øp A A1 Millimeters Dim MIN MAX A A D A b D1 b C D D b2 L1 E e e b e e1 L c A2 L L1 3.9 ØP Q Mechanical Mounting Method Maximum Torque / Pressure specification Screw through hole in package tab 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) Clamp against package body 12.3 kilogram-force per square centimeter (kgf/cm 2 ) or 17 lbf/in 2 TO-22 DPAK Millimeters Dim MIN MAX A A1.1 A b.72.8 b b c D E e H L L1 2.9 REF L2.1 BSC L L L.1.7 L6 1.8 REF Θ 8 Θ1 9 Rev 1. 4/13

6 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 3 C, for up to 1 seconds. See Application Note AN-33, for more details. Ordering Information Part Number Package Packing LQA2T2C TO-22AB units/tube LQA2N2C TO-22 DPAK 2 units/reel The information contained in this document is subject to change without notice. Rev 1. 4/13 6

7 Revision Notes Date 1. Initial Release 4/13 7 Rev 1. 4/13

8 For the latest updates, visit our website: Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations patents may be found at Power Integrations grants its customers a license under certain patent rights as set forth at The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, HiperLCS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. Copyright 213 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 24 Hellyer Avenue San Jose, CA 9138, USA. Main: Customer Service: Phone: Fax: usasales@powerint.com GERMANY Lindwurmstrasse , Munich Germany Phone: Fax: eurosales@powerint.com JAPAN Kosei Dai-3 Building , Shin-Yokohama, Kohoku-ku, Yokohama-shi, Kanagawa Japan Phone: Fax: japansales@powerint.com TAIWAN F, No. 318, Nei Hu Rd., Sec. 1 Nei Hu District Taipei 11493, Taiwan R.O.C. Phone: Fax: taiwansales@powerint.com CHINA (SHANGHAI) Rm 161/161, Tower 1, Kerry Everbright City No. 218 Tianmu Road West, Shanghai, P.R.C. 27 Phone: Fax: chinasales@powerint.com INDIA #1, 14 th Main Road Vasanthanagar Bangalore-62 India Phone: Fax: indiasales@powerint.com KOREA RM 62, 6FL Korea City Air Terminal B/D, 19-6 Samsung-Dong, Kangnam-Gu, Seoul, Korea Phone: Fax: koreasales@powerint.com EUROPE HQ 1st Floor, St. James s House East Street, Farnham Surrey GU9 7TJ United Kingdom Phone: +44 () Fax: +44 () eurosales@powerint.com CHINA (SHENZHEN) 3rd Floor, Block A, Zhongtou International Business Center, No. 161, Xiang Mei Rd, FuTian District, ShenZhen, China, 184 Phone: Fax: chinasales@powerint.com ITALY Via Milanese 2, 3 rd. Fl. 299 Sesto San Giovanni (MI) Italy Phone: Fax: eurosales@powerint.com SINGAPORE 1 Newton Road, #19-1/ Goldhill Plaza Singapore, 389 Phone: Fax: singaporesales@powerint.com APPLICATIONS HOTLINE World Wide APPLICATIONS FAX World Wide Rev 1. 4/13

LXA16T600C Qspeed Family

LXA16T600C Qspeed Family Qspeed Family 6 V, 16 A X-Series Common-Cathode Diode Product Summary I F(AVG) per diode 8 A V RRM 6 V Q RR (Typ at 12 C) 82 nc I RRM (Typ at 12 C) 3. A Softness t b /t a (Typ at 12 C). Pin Assignment