Ultrafast Soft Recovery Diode, 60 A FRED Pt
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1 VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, Ultrafast Soft Recovery iode, 60 FRE Pt FETURES Ultrafast recovery time Low forward voltage drop 175 operating junction temperature TO-247 modified TO-247 esigned and qualified according to JEE -JES 47 athode to base 2 athode to base 2 Material categorization: for definitions of compliance please see vailable BENEFITS Reduced RFI and EMI 1 3 athode node VS-60EPU04PbF VS-60EPU04-N3 1 3 node node VS-60PU04PbF VS-60PU04-N3 Higher frequency operation Reduced snubbing Reduced parts count PROUT SUMMRY Package TO-247 modified (2 pins), TO-247 I F(V) 60 V R 400 V V F at I F 0.87 V t rr typ. See Recovery table T J max. 175 iode variation Single die ESRIPTION / PPLITIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONITIONS VLUES UNITS athode to anode voltage V R 400 V ontinuous forward current I F(V) T = Single pulse forward current I FSM T = Maximum repetitive forward current I FRM Square wave, 20 khz 120 Operating junction and storage temperatures T J, T Stg -55 to +175 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ Forward voltage V F I F = 60, T J = I F = V I F = 60, T J = V R = V R rated μ Reverse leakage current I R T J = 150, V R = V R rated m Junction capacitance T V R = 400 V pf Series inductance L S Measured lead to lead 5 mm from package body nh Revision: 09-Jul-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
2 VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, YNMI REOVERY HRTERISTIS (T = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = ns I F = 1, di F /dt = 200 /μs, V R = 30 V T J = Peak recovery current I RRM T I F = 60 J = di F /dt = 200 /μs T J = 125 V R = 200 V T J = Reverse recovery charge Q rr T J = n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Thermal resistance, R thj junction to case K/W Thermal resistance, Mounting surface, flat, smooth R ths case to heatsink and greased Weight Mounting torque g oz. 1.2 (10) (20) N m (lbf in) Marking device ase style TO-247 modified ase style TO EPU04 60PU04 Revision: 09-Jul-15 2 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
3 VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, 0 0 I F - Instantaneous Forward urrent () 10 T J = 175 T J = 125 T J = 25 I R - Reverse urrent (µ) T J = 175 T J = 125 T J = V F - Forward Voltage rop (V) V R - Reverse Voltage (V) 400 Fig. 1 - Typical Forward Voltage rop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage T - Junction apacitance (pf) 0 T J = V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W) Single pulse (thermal resistance) = 0.50 = 0.20 = 0.10 = 0.05 = 0.02 = Peak T J = P M x Z thj + T t 1 - Rectangular Pulse uration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P M Notes: 1. uty factor = t 1 /t 2 t 1 t Revision: 09-Jul-15 3 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
4 VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, llowable ase Temperature ( ) Square wave ( = 0.50) 80 % rated V R applied See note (1) t rr (ns) V R = 400 V T J = 125 T J = 25 I F = 120 I F = 60 I F = I F(V) - verage Forward urrent () di F /dt (/µs) Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) RMS limit = 0.01 = 0.02 = 0.05 = 0.10 = 0.20 = 0.50 Q rr (n) V R = 400 V T J = 125 T J = 25 I F = 40 I F = 60 I F = I F(V) - verage Forward urrent () Fig. 6 - Forward Power Loss haracteristics 0 0 di F /dt (/µs) Fig. 8 - Typical Stored harge vs. di F /dt Note (1) Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - ); I R at V R1 = 80 % rated V R Revision: 09-Jul-15 4 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
5 VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, V R = 200 V L = 70 μh 0.01 Ω.U.T. di F /dt adjust G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test ircuit (3) 0 I F t a t rr tb (2) I RRM Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig Reverse Recovery Waveform and efinitions Revision: 09-Jul-15 5 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
6 ORERING INFORMTION TBLE VS-60EPU04PbF, VS-60EPU04-N3, VS-60PU04PbF, evice code VS- 60 E P U 04 PbF product 2 - urrent rating (60 = 60 ) 3 - ircuit configuration: E = single diode = single diode, 3 pins 4 - Package: P = TO-247 (modified) 5 - Type of silicon: U = ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORERING INFORMTION (Example) PREFERRE P/N QUNTITY PER T/R MINIMUM ORER QUNTITY PKGING ESRIPTION VS-60EPU04PbF ntistatic plastic tube VS-60EPU04-N ntistatic plastic tube VS-60PU04PbF ntistatic plastic tube VS-60PU04-N ntistatic plastic tube LINKS TO RELTE OUMENTS imensions Part marking information TO-247 modified TO-247 TO-247 modified PbF TO-247 modified -N3 TO-247PbF TO-247-N Revision: 09-Jul-15 6 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
7 IMENSIONS in millimeters and inches TO mils L/F modified Outline imensions B (2) R/2 Q (3) E N S 2 (6) Ø P (atum B) Ø K M B M Ø P1 2 2 x R (2) Thermal pad 4 (5) L1 L See view B E1 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS BS b Ø K b L b L b N 7.62 BS 0.3 b Ø P c Ø P c Q R S 5.51 BS BS Notes (1) imensioning and tolerance per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 21-pr-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
8 TO mils L/F Outline imensions IMENSIONS in millimeters and inches B (2) R/2 Q (3) E N S 2 Ø K M B M (6) Φ P (atum B) 2 Φ P1 2 x R (2) Thermal pad 4 (5) L1 L See view B E M B M 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E E b e 5.46 BS BS b Ø K b L b L b N 7.62 BS 0.3 b Ø P c Ø P c Q R S 5.51 BS BS Notes (1) imensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 21-pr-15 1 ocument Number: For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T
9 Legal isclaimer Notice Vishay isclaimer LL PROUT, PROUT SPEIFITIONS N T RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material ategory Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-ompliant fulfill the definitions and restrictions defined under irective 2011/65/EU of The European Parliament and of the ouncil of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS irective 2002/95/E. We confirm that all the products identified as being compliant to irective 2002/95/E conform to irective 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEE JS709 standards. Please note that some Vishay documentation may still make reference to the IE definition. We confirm that all the products identified as being compliant to IE conform to JEE JS709 standards. Revision: 02-Oct-12 1 ocument Number: 90
Ultrafast Soft Recovery Diode, 60 A FRED Pt
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