Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005


 Lynne Little
 1 years ago
 Views:
Transcription
1 Microelectronic Devices and Circuits  Fall 2005 Lecture 41 Contents: Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, Nonuniformly doped semiconductor in thermal equilibrium 2. Quasineutral situation 3. Relationships between φ() and equilibrium carrier concentrations (Boltzmann relations), 60 mv Rule Reading assignment: Howe and Sodini, Ch. 3,
2 Microelectronic Devices and Circuits  Fall 2005 Lecture 42 Key questions Is it possible to have an electric field inside a semiconductor in thermal equilibrium? If there is a doping gradient in a semiconductor, what is the resulting majority carrier concentration in thermal equilibrium?
3 Microelectronic Devices and Circuits  Fall 2005 Lecture Nonuniformly doped semiconductor in thermal equilibrium Consider first uniformly doped ntype Si in thermal equilibrium: N d N d ()=N d ntype lots of electrons, few holes focus on electrons n o = N d independent of Volume charge density [C/cm 3 ]: ρ = q(n d n o )= 0
4 Microelectronic Devices and Circuits  Fall 2005 Lecture 44 Net, consider piece of ntype Si in thermal equilibrium with nonuniform dopant distribution: N d N d () What is the resulting electron concentration in thermal equilibrium?
5 Microelectronic Devices and Circuits  Fall 2005 Lecture 45 Option 1: Every donor gives out one electron n o () = N d () n o, N d N d () n o ()=N d ()? Gradient of electron concentration: net electron diffusion not thermal equilibrium!
6 Microelectronic Devices and Circuits  Fall 2005 Lecture 46 Option 2: Electron concentration uniform in space: n o = n ave = f () n o, N d N d () n o = f()? Think about space charge density: ρ() = q[n d () n o ()] = n o () ρ() If N d () =0 electric field net electron drift not thermal equilibrium!
7 Microelectronic Devices and Circuits  Fall 2005 Lecture 47 Option 3: Demand J e = 0 in thermal equilibrium (and J h = 0 too) at every Diffusion precisely balances drift: J e () = Je drif t ()+ Je dif f () = 0 What is n o () that satisfies this condition? n o, N d partially uncompensated donor charge  N d () + n o () net electron charge In general, then: n o () = N d () What are the implications of this?
8 Microelectronic Devices and Circuits  Fall 2005 Lecture 48 Space charge density: ρ() = q[n d () n o ()] n o, N d partially uncompensated donor charge  N d () + n o () net electron charge ρ +
9 Microelectronic Devices and Circuits  Fall 2005 Lecture 49 Electric field: Gauss equation: de d ρ = ɛ s Integrate from = 0 to : n o, N d E() E(0) = 1 ρ()d ɛ s 0  N d () + n o () ρ + E
10 Microelectronic Devices and Circuits  Fall 2005 Lecture 410 Electrostatic potential: Integrate from = 0 to : dφ = E d φ() φ(0) = E()d 0 Need to select reference (physics is in potential difference, not in absolute value!); select φ( = 0) = φ ref : n o, N d  N d () + n o () ρ + E φ φ ref
11 Microelectronic Devices and Circuits  Fall 2005 Lecture 411 Given N d (), want to know n o (), ρ(), E(), and φ(). Equations that describe problem: dn o J e = qµ n n o E + qd n =0 d de d q = (N d n o ) ɛ s Epress them in terms of φ: dφ dn o qµ n n o + qd n = 0 (1) d d d 2 φ d 2 q = (n o N d ) (2) ɛ s Plug [1] into [2]: d 2 (ln n o ) q 2 = (n o N d ) (3) d 2 ɛ s kt One equation with one unknown. Given N d (), can solve for n o () and all the rest, but no analytical solution for most situations!
12 Microelectronic Devices and Circuits  Fall 2005 Lecture Quasineutral situation d 2 (ln n o ) q 2 = (n o N d ) d 2 ɛ s kt If N d () changes slowly with : n o () also changes slowly with d 2 (ln n o ) d 2 small = n o () N d () n o () tracks N d () well minimum space charge semiconductor is quasineutral n o, N d N d () n o () = N d () Quasineutrality good if: n o N d n o N d 1 or 1 n o N d
13 Microelectronic Devices and Circuits  Fall 2005 Lecture Relationships between φ() and equilibrium carrier concentrations (Boltzmann relations) From [1]: µ n dφ 1 dn o = D n d n o d Using Einstein relation: q dφ d(ln n o ) = kt d d Integrate: q (φ φ ref )=ln n o ln n o (ref) = ln kt n o (ref) Then: n o = n o (ref)e q(φ φ ref )/kt n o
14 Microelectronic Devices and Circuits  Fall 2005 Lecture 414 Any reference is good. In 6.012, φ ref =0 at n o (ref) = n i. Then: n o = n i e qφ/kt If do same with holes (starting with J h = equilibrium, or simply using n o p o = n 2 i ): 0 in thermal p o = n i e qφ/kt Can rewrite as: φ = kt q ln n o n i and kt φ = q ln p o n i
15 Microelectronic Devices and Circuits  Fall 2005 Lecture mv Rule: At room temperature for Si: φ = (25 mv )ln n o n i = (25 mv ) ln(10) log n o n i Or φ (60 mv ) log n o For every decade of increase in n o, φ increases by 60 mv at 300K. Eample 1: n o =10 18 cm φ = (60 mv ) 8 = 480 mv
16 Microelectronic Devices and Circuits  Fall 2005 Lecture 416 With holes: φ = (25 mv )ln p o n i = (25 mv ) ln(10) log p o n i Or φ (60 mv ) log p o Eample 2: n o =10 18 cm p o =10 2 cm φ = (60 mv ) ( 8) = 480 mv
17 Microelectronic Devices and Circuits  Fall 2005 Lecture 417 Relationship between φ and n o and p o : φ (mv) φ ma =550 mv φ min =550 mv n o =p o =n i n o (cm3) p o (cm3) Note: φ cannot eceed 550 mv or be smaller than 550 mv (beyond these points, different physics come into play).
18 Microelectronic Devices and Circuits  Fall 2005 Lecture 418 Eample 3: Compute potential difference in thermal equilibrium between region where n o =10 17 cm and region where p o =10 15 cm : φ(n o =10 17 cm )= 60 7 = 420 mv φ(p o =10 15 cm )= 60 5 = 00 mv φ(n o =10 17 cm ) φ(p o =10 15 cm ) = 720 mv Eample 4: Compute potential difference in thermal equilibrium between region where n o =10 20 cm and region where p o =10 16 cm : φ(n o =10 20 cm )= φ ma = 550 mv φ(p o =10 16 cm )= 60 6 = 60 mv φ(n o =10 20 cm ) φ(p o =10 16 cm ) = 910 mv
19 Microelectronic Devices and Circuits  Fall 2005 Lecture 419 Boltzmann relations readily seen in device behavior! 2 pn diode currentvoltage characteristics: 2 Bipolar transistor transfer characteristics:
20 Microelectronic Devices and Circuits  Fall 2005 Lecture 420 Key conclusions It is possible to have an electric field inside a semiconductor in thermal equilibrium nonuniform doping distribution. In a slowly varying doping profile, majority carrier concentration tracks well doping concentration. In thermal equilibrium, there are fundamental relationships between φ() and the equilibrium carrier concentrations Boltzmann relations (or 60 mv Rule ).
Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium. February 13, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 41 Contents: Lecture 4  PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium February 13, 2003
More informationLecture 7  Carrier Drift and Diffusion (cont.) February 20, Nonuniformly doped semiconductor in thermal equilibrium
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 71 Lecture 7  Carrier Drift and Diffusion (cont.) February 20, 2007 Contents: 1. Nonuniformly doped semiconductor in thermal equilibrium
More informationLecture 8  Carrier Drift and Diffusion (cont.) September 21, 2001
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2001 Lecture 81 Lecture 8  Carrier Drift and Diffusion (cont.) September 21, 2001 Contents: 1. Nonuniformly doped semiconductor in thermal equilibrium
More informationLecture 15  The pn Junction Diode (I) IV Characteristics. November 1, 2005
6.012  Microelectronic Devices and Circuits  Fall 2005 Lecture 151 Lecture 15  The pn Junction Diode (I) IV Characteristics November 1, 2005 Contents: 1. pn junction under bias 2. IV characteristics
More informationLecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oxide Semiconductor Structure (cont.) October 4, 2005
6.12 Microelectronic Devices and Circuits Fall 25 Lecture 8 1 Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of Metal Oide Semiconductor Structure (cont.) Contents: October 4, 25 1. Overview
More informationLecture 7  PN Junction and MOS Electrostatics (IV) Electrostatics of MetalOxideSemiconductor Structure. September 29, 2005
6.12  Microelectronic Devices and Circuits  Fall 25 Lecture 71 Lecture 7  PN Junction and MOS Electrostatics (IV) Electrostatics of MetalOideSemiconductor Structure September 29, 25 Contents: 1.
More informationElectronic Devices and Circuits Lecture 5  pn Junction Injection and Flow  Outline
6.012  Electronic Devices and Circuits Lecture 5  pn Junction Injection and Flow  Outline Review Depletion approimation for an abrupt pn junction Depletion charge storage and depletion capacitance
More informationLecture 3 Semiconductor Physics (II) Carrier Transport
Lecture 3 Semiconductor Physics (II) Carrier Transport Thermal Motion Carrier Drift Carrier Diffusion Outline Reading Assignment: Howe and Sodini; Chapter 2, Sect. 2.42.6 6.012 Spring 2009 Lecture 3 1
More informationWeek 3, Lectures 68, Jan 29 Feb 2, 2001
Week 3, Lectures 68, Jan 29 Feb 2, 2001 EECS 105 Microelectronics Devices and Circuits, Spring 2001 Andrew R. Neureuther Topics: M: Charge density, electric field, and potential; W: Capacitance of pn
More informationSemiconductor Junctions
8 Semiconductor Junctions Almost all solar cells contain junctions between different materials of different doping. Since these junctions are crucial to the operation of the solar cell, we will discuss
More informationLecture 8  Carrier Drift and Diffusion (cont.), Carrier Flow. February 21, 2007
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 81 Lecture 8  Carrier Drift and Diffusion (cont.), Carrier Flow February 21, 2007 Contents: 1. QuasiFermi levels 2. Continuity
More informationLecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.)
Lecture 7 PN Junction and MOS Electrostatics(IV) Metal Oxide Semiconductor Structure (contd.) Outline 1. Overview of MOS electrostatics under bias 2. Depletion regime 3. Flatband 4. Accumulation regime
More informationn N D n p = n i p N A
Summary of electron and hole concentration in semiconductors Intrinsic semiconductor: E G n kt i = pi = N e 2 0 Donordoped semiconductor: n N D where N D is the concentration of donor impurity Acceptordoped
More informationECE 340 Lecture 21 : PN Junction II Class Outline:
ECE 340 Lecture 21 : PN Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
More informationDiodes. anode. cathode. cutoff. Can be approximated by a piecewiselinearlike characteristic. Lecture 91
Diodes mplest nonlinear circuit element Basic operation sets the foundation for Bipolar Junction Transistors (BJTs) Also present in Field Effect Transistors (FETs) Ideal diode characteristic anode cathode
More informationLecture 9  Carrier Drift and Diffusion (cont.), Carrier Flow. September 24, 2001
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2001 Lecture 91 Lecture 9  Carrier Drift and Diffusion (cont.), Carrier Flow September 24, 2001 Contents: 1. QuasiFermi levels 2. Continuity
More informationLecture 17  pn Junction. October 11, Ideal pn junction in equilibrium 2. Ideal pn junction out of equilibrium
6.72J/3.43J  Integrated Microelectronic Devices  Fall 22 Lecture 171 Lecture 17  pn Junction October 11, 22 Contents: 1. Ideal pn junction in equilibrium 2. Ideal pn junction out of equilibrium
More informationLecture 6 PN Junction and MOS Electrostatics(III) MetalOxideSemiconductor Structure
Lecture 6 PN Junction and MOS Electrostatics(III) MetalOxideSemiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with
More informationECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline:
ECE 440 Lecture 20 : PN Junction Electrostatics II Class Outline: Depletion Approximation Step Junction Things you should know when you leave Key Questions What is the space charge region? What are the
More informationReview 5 unknowns: n(x,t), p(x,t), J e. Doping profile problems Electrostatic potential Poisson's equation. (x,t), J h
6.012  Electronic Devices and Circuits Lecture 3  Solving The Five Equations  Outline Announcements Handouts  1. Lecture; 2. Photoconductivity; 3. Solving the 5 eqs. See website for Items 2 and 3.
More informationLecture 2. OUTLINE Basic Semiconductor Physics (cont d) PN Junction Diodes. Reading: Chapter Carrier drift and diffusion
Lecture 2 OUTLIE Basic Semiconductor Physics (cont d) Carrier drift and diffusion P unction Diodes Electrostatics Caacitance Reading: Chater 2.1 2.2 EE105 Sring 2008 Lecture 1, 2, Slide 1 Prof. Wu, UC
More informationElectrical Characteristics of MOS Devices
Electrical Characteristics of MOS Devices The MOS Capacitor Voltage components Accumulation, Depletion, Inversion Modes Effect of channel bias and substrate bias Effect of gate oide charges Thresholdvoltage
More informationThe 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities:
6.012  Electronic Devices and Circuits Solving the 5 basic equations  2/12/08 Version The 5 basic equations of semiconductor device physics: We will in general be faced with finding 5 quantities: n(x,t),
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 9/18/2007 P Junctions Lecture 1 Reading: Chapter 5 Announcements For THIS WEEK OLY, Prof. Javey's office hours will be held on Tuesday, Sept 18 3:304:30
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics t ti Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE105 Fall 2007
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions
EE105 Fall 2015 Microelectronic Devices and Circuits: Semiconductor Fabrication and PN Junctions Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1 pn Junction ptype semiconductor in
More informationLecture 10  Carrier Flow (cont.) February 28, 2007
6.720J/3.43J Integrated Microelectronic Devices  Spring 2007 Lecture 101 Lecture 10  Carrier Flow (cont.) February 28, 2007 Contents: 1. Minoritycarrier type situations Reading assignment: del Alamo,
More informationSemiconductor Physics Problems 2015
Semiconductor Physics Problems 2015 Page and figure numbers refer to Semiconductor Devices Physics and Technology, 3rd edition, by SM Sze and MK Lee 1. The purest semiconductor crystals it is possible
More informationSemiconductor Device Physics
1 Semiconductor Device Physics Lecture 3 http://zitompul.wordpress.com 2 0 1 3 Semiconductor Device Physics 2 Three primary types of carrier action occur inside a semiconductor: Drift: charged particle
More information6.012 Electronic Devices and Circuits
Page 1 of 1 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.12 Electronic Devices and Circuits Exam No. 1 Wednesday, October 7, 29 7:3 to 9:3
More informationLecture 13  Carrier Flow (cont.), MetalSemiconductor Junction. October 2, 2002
6.72J/3.43J  Integrated Microelectronic Devices  Fall 22 Lecture 131 Contents: Lecture 13  Carrier Flow (cont.), MetalSemiconductor Junction October 2, 22 1. Transport in spacecharge and highresistivity
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals Bond Model of Electrons and Holes Si Si Si Si Si Si Si Si Si Silicon
More informationLecture 15 OUTLINE. MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor
Lecture 15 OUTLINE MOSFET structure & operation (qualitative) Review of electrostatics The (N)MOS capacitor Electrostatics Charge vs. voltage characteristic Reading: Chapter 6.1 6.2.1 EE15 Spring 28 Lecture
More informationECE 440 Lecture 28 : PN Junction II Class Outline:
ECE 440 Lecture 28 : PN Junction II Class Outline: Contact Potential Equilibrium Fermi Levels Things you should know when you leave Key Questions What is the contact potential? Where does the transition
More informationLecture 15 The pn Junction Diode (II)
Lecture 15 The pn Junction Diode (II IV characteristics Forward Bias Reverse Bias Outline Reading Assignment: Howe and Sodini; Chapter 6, Sections 6.46.5 6.012 Spring 2007 Lecture 15 1 1. IV Characteristics
More informationLecture 2. Semiconductor Physics. Sunday 4/10/2015 Semiconductor Physics 11
Lecture 2 Semiconductor Physics Sunday 4/10/2015 Semiconductor Physics 11 Outline Intrinsic bond model: electrons and holes Charge carrier generation and recombination Intrinsic semiconductor Doping:
More informationLecture 22  The Si surface and the MetalOxideSemiconductor Structure (cont.) April 2, 2007
6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 221 Lecture 22  The Si surface and the MetalOxideSemiconductor Structure (cont.) April 2, 2007 Contents: 1. Ideal MOS structure
More informationLecture 6  PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias February 27, 2001
6.012 Microelectronic Devices and Circuits Spring 2001 Lecture 61 Lecture 6 PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias February 27, 2001 Contents: 1. electrostatics
More informationSpring Semester 2012 Final Exam
Spring Semester 2012 Final Exam Note: Show your work, underline results, and always show units. Official exam time: 2.0 hours; an extension of at least 1.0 hour will be granted to anyone. Materials parameters
More informationLecture 04 Review of MOSFET
ECE 541/ME 541 Microelectronic Fabrication Techniques Lecture 04 Review of MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) What is a Transistor? A Switch! An MOS Transistor V GS V T V GS S Ron D
More informationIntroduction to Power Semiconductor Devices
ECE442 Power Semiconductor Devices and Integrated Circuits Introduction to Power Semiconductor Devices Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Semiconductor Devices Applications System Ratings
More informationHoles (10x larger). Diode currents proportional to minority carrier densities on each side of the depletion region: J n n p0 = n i 2
Part V. (40 pts.) A diode is composed of an abrupt PN junction with N D = 10 16 /cm 3 and N A =10 17 /cm 3. The diode is very long so you can assume the ends are at x =positive and negative infinity. 1.
More informationECE 440 Lecture 12 : Diffusion of Carriers Class Outline:
ECE 440 Lecture 12 : Diffusion of Carriers Class Outline: Band Bending Diffusion Processes Diffusion and Drift of Carriers Things you should know when you leave Key Questions How do I calculate kinetic
More informationPHYS208 PN Junction. Olav Torheim. May 30, 2007
1 PHYS208 PN Junction Olav Torheim May 30, 2007 1 Intrinsic semiconductors The lower end of the conduction band is a parabola, just like in the quadratic free electron case (E = h2 k 2 2m ). The density
More informationChapter 7. The pn Junction
Chapter 7 The pn Junction Chapter 7 PN Junction PN junction can be fabricated by implanting or diffusing donors into a Ptype substrate such that a layer of semiconductor is converted into N type. Converting
More informationPN Junction. Ang M.S. October 8, Maxwell s Eqautions Review : Poisson s Equation for PNJ. Q encl S. E ds. σ = dq ds. ρdv = Q encl.
PN Junction Ang M.S. October 8, 0 Reference Sedra / Smith, M icroelectronic Circuits Maxwell s Eqautions Review : Poisson s Equation for PNJ. Gauss Law for E field The total enclosed charge Q encl. insde
More informationLecture 12: MOS Capacitors, transistors. Context
Lecture 12: MOS Capacitors, transistors Context In the last lecture, we discussed PN diodes, and the depletion layer into semiconductor surfaces. Small signal models In this lecture, we will apply those
More informationESE 372 / Spring 2013 / Lecture 5 Metal Oxide Semiconductor Field Effect Transistor
Metal Oxide Semiconductor Field Effect Transistor V G V G 1 Metal Oxide Semiconductor Field Effect Transistor We will need to understand how this current flows through Si What is electric current? 2 Back
More informationChapter 2. Electronics I  Semiconductors
Chapter 2 Electronics I  Semiconductors Fall 2017 talarico@gonzaga.edu 1 Charged Particles The operation of all electronic devices is based on controlling the flow of charged particles There are two type
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 10/02/2007 MS Junctions, Lecture 2 MOS Cap, Lecture 1 Reading: finish chapter14, start chapter16 Announcements Professor Javey will hold his OH at
More informationGetting J e (x), J h (x), E(x), and p'(x), knowing n'(x) Solving the diffusion equation for n'(x) (using ptype example)
6.012  Electronic Devices and Circuits Lecture 4  Nonuniform Injection (Flow) Problems  Outline Announcements Handouts  1. Lecture Outline and Summary; 2. Thermoelectrics Review Thermoelectricity:
More informationL03: pn Junctions, Diodes
8/30/2012 Page 1 of 5 Reference:C:\Users\Bernhard Boser\Documents\Files\Lib\MathCAD\Default\defaults.mcd L03: pn Junctions, Diodes Intrinsic Si Q: What are n, p? Q: Is the Si charged? Q: How could we make
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination The MetalSemiconductor Junction: Review Energy band diagram of the metal and the semiconductor before (a)
More informationNumerical Example: Carrier Concentrations
2 Numerical ample: Carrier Concentrations Donor concentration: N d = 10 15 cm 3 Thermal equilibrium electron concentration: n o N d = 10 15 cm 3 Thermal equilibrium hole concentration: 2 2 p o = n i no
More informationLecture 16 The pn Junction Diode (III)
Lecture 16 The pn Junction iode (III) Outline I V Characteristics (Review) Small signal equivalent circuit model Carrier charge storage iffusion capacitance Reading Assignment: Howe and Sodini; Chapter
More informationSchottky Rectifiers Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Schottky Rectifiers Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Schottky Rectifier Structure 2 MetalSemiconductor Contact The work function
More informationECE321 Electronics I
ECE321 Electronics I Lecture 4: Physics of Semiconductor iodes Payman ZarkeshHa Office: ECE Bldg. 230B Office hours: Tuesday 2:003:00PM or by appointment Email: pzarkesh.unm.edu Slide: 1 Review of Last
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 23, 2018 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2018 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationCarrier transport: Drift and Diffusion
. Carrier transport: Drift and INEL 5209  Solid State Devices  Spring 2012 Manuel Toledo April 10, 2012 Manuel Toledo Transport 1/ 32 Outline...1 Drift Drift current Mobility Resistivity Resistance Hall
More informationcollisions of electrons. In semiconductor, in certain temperature ranges the conductivity increases rapidly by increasing temperature
1.9. Temperature Dependence of Semiconductor Conductivity Such dependence is one most important in semiconductor. In metals, Conductivity decreases by increasing temperature due to greater frequency of
More informationCharge Carriers in Semiconductor
Charge Carriers in Semiconductor To understand PN junction s IV characteristics, it is important to understand charge carriers behavior in solids, how to modify carrier densities, and different mechanisms
More informationBasic Physics of Semiconductors
Basic Physics of Semiconductors Semiconductor materials and their properties PNjunction diodes Reverse Breakdown EEM 205 Electronics I Dicle University, EEE Dr. Mehmet Siraç ÖZERDEM Semiconductor Physics
More informationCarriers Concentration, Current & Hall Effect in Semiconductors. Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India
Carriers Concentration, Current & Hall Effect in Semiconductors 1 Prof.P. Ravindran, Department of Physics, Central University of Tamil Nadu, India http://folk.uio.no/ravi/semi2013 Conductivity Charge
More informationLecture 16  The pn Junction Diode (II) Equivalent Circuit Model. April 8, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 161 Lecture 16  The pn Junction Diode (II) Equivalent Circuit Model April 8, 2003 Contents: 1. IV characteristics (cont.) 2. Smallsignal
More information( )! N D ( x) ) and equilibrium
ECE 66: SOLUTIONS: ECE 66 Homework Week 8 Mark Lundstrom March 7, 13 1) The doping profile for an n type silicon wafer ( N D = 1 15 cm  3 ) with a heavily doped thin layer at the surface (surface concentration,
More information16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE. Energy Band Diagram of Conductor, Insulator and Semiconductor:
16EC401 BASIC ELECTRONIC DEVICES UNIT I PN JUNCTION DIODE Energy bands in Intrinsic and Extrinsic silicon: Energy Band Diagram of Conductor, Insulator and Semiconductor: 1 2 Carrier transport: Any motion
More informationFIELDEFFECT TRANSISTORS
FIELEFFECT TRANSISTORS 1 Semiconductor review 2 The MOS capacitor 2 The enhancementtype NMOS transistor 3 IV characteristics of enhancement MOSFETS 4 The output characteristic of the MOSFET in saturation
More informationPN Junction and MOS structure
PN Junction and MOS structure Basic electrostatic equations We will use simple onedimensional electrostatic equations to develop insight and basic understanding of how semiconductor devices operate Gauss's
More informationESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 4: January 29, 2019 MOS Transistor Theory, MOS Model Penn ESE 570 Spring 2019 Khanna Lecture Outline! CMOS Process Enhancements! Semiconductor
More informationFinal Examination EE 130 December 16, 1997 Time allotted: 180 minutes
Final Examination EE 130 December 16, 1997 Time allotted: 180 minutes Problem 1: Semiconductor Fundamentals [30 points] A uniformly doped silicon sample of length 100µm and crosssectional area 100µm 2
More informationUNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits Spring 2008 MIDTERM EXAMINATION #1 Time
More informationBandbending. EE 436 bandbending 1
Bandbending In the pn junction and BJT, we saw that the semiconductor band edges were bent in the depletion layers. We used the depletion approximation and Poisson s equation to relate the bandbending
More informationDevices. chapter Introduction. 1.2 Silicon Conductivity
chapter 1 Devices 1.1 Introduction The properties and performance of analog bicmos integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of
More informationElectrostatics: The Key to Understanding Electronic Devices. Boundary Conditions. Physics approach: vector calculus, highly symmetrical problems
lectrostatics: The Key to Understanding lectronic Devices Boundary Conditions Physics approach: vector calculus, highly symmetrical problems 1. Potential: φ( =  ) = φ( = + ) φ() GaussÕs Law: ( ε) = ρ
More informationECE 142: Electronic Circuits Lecture 3: Semiconductors
Faculty of Engineering ECE 142: Electronic Circuits Lecture 3: Semiconductors Agenda Intrinsic Semiconductors Extrinsic Semiconductors Ntype Ptype Carrier Transport Drift Diffusion Semiconductors A semiconductor
More informationElectronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1)
Electronic Circuits for Mechatronics ELCT 609 Lecture 2: PN Junctions (1) Assistant Professor Office: C3.315 Email: eman.azab@guc.edu.eg 1 Electronic (Semiconductor) Devices PN Junctions (Diodes): Physical
More informationLecture 20  pn Junction (cont.) October 21, Nonideal and secondorder effects
6.70J/3.43J  Integrated Microelectronic Devices  Fall 00 Lecture 01 Lecture 0  pn Junction (cont.) October 1, 00 Contents: 1. Nonideal and secondorder effects Reading assignment: del Alamo, Ch.
More informationSection 12: Intro to Devices
Section 12: Intro to Devices Extensive reading materials on reserve, including Robert F. Pierret, Semiconductor Device Fundamentals EE143 Ali Javey Bond Model of Electrons and Holes Si Si Si Si Si Si Si
More informationClassification of Solids
Classification of Solids Classification by conductivity, which is related to the band structure: (Filled bands are shown dark; D(E) = Density of states) Class Electron Density Density of States D(E) Examples
More informationChapter 1 Semiconductor basics
Chapter 1 Semiconductor basics ELECH402/CH1: Semiconductor basics 1 Basic semiconductor concepts Semiconductor basics Semiconductors, silicon and holeelectron pair Intrinsic silicon properties Doped
More informationLecture4 Junction Diode Characteristics
1 Lecture4 Junction Diode Characteristics PartII Q: Aluminum is alloyed into ntype Si sample (N D = 10 16 cm 3 ) forming an abrupt junction of circular crosssection, with an diameter of 0.02 in. Assume
More informationSample Exam # 2 ECEN 3320 Fall 2013 Semiconductor Devices October 28, 2013 Due November 4, 2013
Sample Exam # 2 ECEN 3320 Fall 203 Semiconductor Devices October 28, 203 Due November 4, 203. Below is the capacitancevoltage curve measured from a Schottky contact made on GaAs at T 300 K. Figure : Capacitance
More informationLecture 0. EE206 Electronics I
Lecture 0 Course Overview EE206 Electronics I Course description: Theory, characteristics and operation of diodes, bipolar junction transistors and MOSFET transistors. When: Tue Thu 10:3012:20 (Lectures)
More informationElectrical Resistance
Electrical Resistance I + V _ W Material with resistivity ρ t L Resistance R V I = L ρ Wt (Unit: ohms) where ρ is the electrical resistivity 1 Adding parts/billion to parts/thousand of dopants to pure
More informationUNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences. EECS 130 Professor Ali Javey Fall 2006
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 130 Professor Ali Javey Fall 2006 Midterm I Name: Closed book. One sheet of notes is allowed.
More informationCarriers Concentration and Current in Semiconductors
Carriers Concentration and Current in Semiconductors Carrier Transport Two driving forces for carrier transport: electric field and spatial variation of the carrier concentration. Both driving forces lead
More informationLecture 19  pn Junction (cont.) October 18, Ideal pn junction out of equilibrium (cont.) 2. pn junction diode: parasitics, dynamics
6.720J/3.43J  Integrated Microelectronic Devices  Fall 2002 Lecture 191 Lecture 19  pn Junction (cont.) October 18, 2002 Contents: 1. Ideal pn junction out of equilibrium (cont.) 2. pn junction diode:
More informationMicroelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5 
6.012  Microelectronic Devices and Circuits Lecture 9  MOS Capacitors I  Outline Announcements Problem set 5  Posted on Stellar. Due net Wednesday. Qualitative description  MOS in thermal equilibrium
More informationSolid State Physics SEMICONDUCTORS  IV. Lecture 25. A.H. Harker. Physics and Astronomy UCL
Solid State Physics SEMICONDUCTORS  IV Lecture 25 A.H. Harker Physics and Astronomy UCL 9.9 Carrier diffusion and recombination Suppose we have a ptype semiconductor, i.e. n h >> n e. (1) Create a local
More informationPN Junctions. Lecture 7
Lecture 7 PN Junctions Kathy Aidala Applied Physics, G2 Harvard University 10 October, 2002 Wei 1 Active Circuit Elements Why are they desirable? Much greater flexibility in circuit applications. What
More informationSemiconductor Physics and Devices
The pn Junction 1) Charge carriers crossing the junction. 3) Barrier potential Semiconductor Physics and Devices Chapter 8. The pn Junction Diode 2) Formation of positive and negative ions. 4) Formation
More informationLecture Notes 2 ChargeCoupled Devices (CCDs) Part I. Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis
Lecture Notes 2 ChargeCoupled Devices (CCDs) Part I Basic CCD Operation CCD Image Sensor Architectures Static and Dynamic Analysis Charge Well Capacity Buried channel CCD Transfer Efficiency Readout Speed
More informationElectronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gergely Nagy BME DED September 16, 2013 The basic properties of semiconductors Semiconductors conductance is between that of conductors
More informationLecture 17  The Bipolar Junction Transistor (I) Forward Active Regime. April 10, 2003
6.012  Microelectronic Devices and Circuits  Spring 2003 Lecture 171 Lecture 17  The Bipolar Junction Transistor (I) Contents: Forward Active Regime April 10, 2003 1. BJT: structure and basic operation
More informationSemiconductor Physics fall 2012 problems
Semiconductor Physics fall 2012 problems 1. An ntype sample of silicon has a uniform density N D = 10 16 atoms cm 3 of arsenic, and a ptype silicon sample has N A = 10 15 atoms cm 3 of boron. For each
More informationSemiconductor Physics. Lecture 6
Semiconductor Physics Lecture 6 Recap pn junction and the depletion region Driven by the need to have no gradient in the fermi level free carriers migrate across the pn junction leaving a region with few
More informationSemiconductors CHAPTER 3. Introduction The pn Junction with an Applied Voltage Intrinsic Semiconductors 136
CHAPTER 3 Semiconductors Introduction 135 3.1 Intrinsic Semiconductors 136 3.2 Doped Semiconductors 139 3.3 Current Flow in Semiconductors 142 3.4 The pn Junction 148 3.5 The pn Junction with an Applied
More informationLecture 2. Introduction to semiconductors Structures and characteristics in semiconductors
Lecture 2 Introduction to semiconductors Structures and characteristics in semiconductors Semiconductor pn junction Metal Oxide Silicon structure Semiconductor contact Literature Glen F. Knoll, Radiation
More informationFor the following statements, mark ( ) for true statement and (X) for wrong statement and correct it.
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
More informationEE301 Electronics I , Fall
EE301 Electronics I 20182019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More information