STPS1045B. Power Schottky rectifier. Description. Features

Similar documents
STTH10LCD06. Turbo 2 ultrafast - high voltage rectifier for flat panel displays. Description. Features

STPS2H V power Schottky rectifier. Datasheet. Features. Description. Negligible switching losses

STTH5L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features

Negligible switching losses. Low forward voltage drop Surface mount miniature packages Avalanche rated ECOPACK 2 compliant

STTH60SW03C. Turbo 2 ultrafast high voltage rectifier. Description. Features

STPSC15H V power Schottky silicon carbide diode. Datasheet. Features A. Description. No or negligible reverse recovery

STTH10R04. High efficiency rectifier. Description. Features

STTH1R04. Ultrafast recovery diode. Description. Features

STPS1L40M LOW DROP POWER SCHOTTKY RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM. 1 A 40 V T j (max) 150 C V F (max) 0.

STTH16L06C-Y. Automotive turbo 2 ultrafast high voltage rectifier. Description. Features

STTH15L06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 2x10A 30 V Tj (max) 150 C

Description. Table 1. Device summary (1) Lead finish

Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 150 V I F(RMS) RMS forward voltage 15 A

STTH16R04CT. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes TO-220AB TO-220FPAB

STPS1545. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description 15 A 45 V

STTH312B. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Description. Order codes

STPS20M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation

STTH6110TV. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Order codes. Description ISOTOP ISOTOP

DO-15 DO-201AD STTH3R04Q STTH3R04

STTH6006W. Turbo 2 ultrafast - high voltage rectifier. Features and benefits. Description. Main product characteristics

STTH60R04. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes

BAR42FILM BAR43FILM SMALL SIGNAL SCHOTTKY DIODE. Table 1: Main Product Characteristics I F(AV) 0.1 A V RRM. 30 V T j 150 C 0.33 and 0.

STTH61R04TV. Ultrafast recovery diode. Main product characteristics. Features and benefits. Order codes. Description A1 K2 ISOTOP ISOTOP STTH61R04TV1

T610T-8FP. 6 A logic level Triac. Description. Features. Applications

STTH3002. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes K DOP3I STTH3002PI DO-247 STTH3002W

Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

STPS3L60/Q/U POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 60 V Tj (max) 150 C DO-15 STPS3L60Q DO-201AD STPS3L60

Features. Description. Table 1. Device summary. Order code Marking Packages Packing. STGD19N40LZ GD19N40LZ DPAK Tape and reel

Automotive-grade 400 V internally clamped IGBT E SCIS 320 mj

SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER. MAIN PRODUCTS CHARACTERISTICS 2x20A 45 V Tj (max) 150 C

STPS30SM100S. Power Schottky rectifier. Features. Description

STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.


STTH6004W. Ultrafast high voltage rectifier. Table 1: Main product characteristics I F(AV) 60 A V RRM. 400 V T j (max) 175 C V F (typ)

STTH5L06RL. Turbo 2 ultrafast high voltage rectifier. Main product characteristics. Features and benefits. Order codes.

STTH12R06. Turbo 2 ultrafast high voltage rectifier. Features. Description

Obsolete Product(s) - Obsolete Product(s)

T810H. High temperature 8 A sensitive TRIACs. Features. Applications. Description. Medium current TRIAC

ST2L Very low quiescent current dual voltage regulator. Description. Features. Applications

STTH212RL. High voltage ultrafast diode. Main product characteristics. Features and benefits. Order codes. Description DO-201AD STTH212

STTH1210G. Ultrafast recovery - high voltage diode. Main product characteristics. Features and benefits. Description. Order codes K TO-220AC STTH1210D

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description. Part numbers. AB version C version Output voltage LD2980ABM30TR LD2980ABM33TR LD2980CM33TR 3.3 V LD2980ABM50TR LD2980CM50TR 5.

VNL5090N3-E, VNL5090S5-E

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

STTH3R06RL TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER. Table 1: Main Product Characteristics I F(AV) V RRM

BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP

ACEPACK 1 converter inverter brake, 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and NTC

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

LD A high PSRR ultra low drop linear regulator with reverse current protection. Datasheet. Features. Applications.

ACEPACK 2 converter inverter brake, 1200 V, 35 A trench gate field-stop IGBT M series, soft diode and NTC

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Small Signal Fast Switching Diode

STPS10L60D/FP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS. 10 A 60 V Tj (max) 150 C TO-220FPAC STPS10L60FP

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Small Signal Fast Switching Diode

VNH9013Y. Automotive integrated H-bridge. Description. Features

ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC

Order codes Part numbers DPAK (tape and reel) PPAK (tape and reel)

LDL212. High PSRR, low drop linear regulator IC. Datasheet. Features. Applications. Description

ELECTROSÓN BTA24, BTB24, BTA25 BTA26, BTB26, T A standard and Snubberless triacs. Features. Applications. Description

High Voltage Trench MOS Barrier Schottky Rectifier

Small Signal Fast Switching Diode FEATURES

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

STTH8R03G/D 300V HYPERFAST RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 8A 300 V I RM (typ.) Tj (max) 175 C TO-220AC STTH8R03D

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

A1P50S65M2. ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC. Datasheet. Features.

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

K G. Order code 400 V 600 V Min. Max. P0111MA 1AA3 X 4 µa 25 µa TO-92. P0111MN 5AA4 X 4 µa 25 µa SOT-223. P0115DA 5AL3 X 15 µa 50 µa TO-92

1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS. 1 A 40 V Tj 150 C

LD29300xx. 3 A, very low drop voltage regulators. Features. Description

FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD

Small Signal Fast Switching Diode

T4 Series 4A TRIACS. Table 1: Main Features Symbol Value Unit I T(RMS) 4 A. V DRM /V RRM 600 to 800 V. I GT (Q1 ) 5 to 35 ma

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

ESDAULC5-1BF4. Low clamping and ultra low capacitance single line bidirectional ESD protection. Applications. Description.

STM1831. Voltage detector with sense input and external delay capacitor. Features. Applications

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

High-Voltage Schottky Rectifier

Description. Symbol Value Unit SOT23-3L (P010xxL) I T(RMS) up to 0.8 A V DRM /V RRM up to 600 V. I GT From 5 to 200 µa

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

BTA12, BTB12 and T12 Series

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

Hyperfast Rectifier, 8 A FRED Pt

STD5N20L N-CHANNEL 200V Ω - 5A DPAK STripFET MOSFET

L78LxxAB L78LxxAC - L78LxxC

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab

Zener Diodes FEATURES APPLICATIONS

Transcription:

Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended for use in high frequency circuitries where low switching losses is required. Table 1. Device summary Symbol Value I F(AV) 10 A V RRM 45 V T j 175 C V F(typ) 0.50 V Features Very small conduction losses Extremely fast switching Low thermal resistance Negligible switching losses Low forward voltage drop Low capacitance Avalanche specification ECOPACK 2 compliant component for DPAK on demand November 2014 DocID6085 Rev 7 1/8 This is information on a product in full production. www.st.com 8

Characteristics STPS1045B 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C unless otherwise stated) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 45 V I F(RMS) / pin Forward rms current 7 A I F(AV) Average forward current, square wave T c = 150 C, δ = 0.5 10 A I FSM Surge non repetitive forward current t p = 10 ms sinusoidal 75 A P ARM Repetitive peak avalanche power t p = 10 μs, T j = 125 C 285 W T stg Storage temperature range -65 to + 150 C T j Maximum operating junction temperature (1) 175 C 1. dptot 1 < dtj Rth(j-a) condition to avoid thermal runaway for a diode on its own heatsink Table 3. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case 3 C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop T j = 25 C 100 μa V R = V RRM T j = 125 C 7 15 ma T j = 25 C 0.63 I F = 10 A T j = 125 C 0.50 0.57 T j = 25 C 0.84 I F = 20 A T j = 125 C 0.65 0.72 V 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x I F(AV) + 0.015 I F 2 (RMS) 2/8 DocID6085 Rev 7

Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (δ = 0.5) 8 7 6 5 4 P F(AV) (W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 12 10 8 6 I F(AV) (A) R th(j-a) =Rth(j-c) R th(j-a) =15 C/W 3 2 T 1 I F(AV) (A) 0 δ=tp/t tp 0 1 2 3 4 5 6 7 8 9 10 11 12 R th(j-a) =70 C/W 4 2 T amb( C) 0 0 25 50 75 100 125 150 175 Figure 3. Normalized avalanche power derating versus pulse duration at T j = 125 C Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1 P ARM(tp) P (10 µs) ARM 1.0 Z th(j-c) /Rth(j-c) 0.8 0.1 0.6 δ = 0.5 0.01 0.001 t p(µs) 1 10 100 1000 0.4 δ = 0.2 T δ = 0.1 0.2 Single pulse t p(s) δ=tp/t tp 0.0 1E-4 1E-3 1E-2 1E-1 1E+0 1E+5 1E+4 1E+3 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) I (µa) R T j=150 C T j=125 C T j=100 C Figure 6. Junction capacitance versus reverse voltage applied (typical values) 1000 500 C(pF) F=1MHz V OSC=30mVRMS T j=25 C 1E+2 1E+1 T j=75 C T j=50 C T j=25 C 200 1E+0 V R(V) 1E-1 0 5 10 15 20 25 30 35 40 45 100 V (V) R 1 2 5 10 20 50 DocID6085 Rev 7 3/8

Characteristics STPS1045B Figure 7. Forward voltage drop versus forward current Figure 8. Thermal resistance junction to ambient versus copper surface under tab 100.0 I FM(A) T j=125 C (maximum values) 100 Rth(j-a)( C/W) Epoxy printed circuit board, copper thickness: 35 µm 10.0 T j=125 C (typical values) 80 60 1.0 T j=25 C (maximum values) 40 V FM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 0 S(Cu)(cm 2 ) 0 2 4 6 8 10 12 14 16 18 20 4/8 DocID6085 Rev 7

Package Information 2 Package Information Epoxy meets UL94,V0 Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 9. DPAK dimension definitions E b4 c2 A E1 L2 Thermal pad H R D D1 D L4 e e1 b A1 c R A2 L 0.25 L1 V2 Gauge plane Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID6085 Rev 7 5/8

Package Information STPS1045B Ref. Table 5. DPAK dimension values Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A 2.18 2.40 0.085 0.094 A1 0.90 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.01 b 0.64 0.90 0.025 0.035 b4 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.60 0.018 0.024 D 5.97 6.22 0.235 0.245 D1 5.10 0.201 E 6.35 6.73 0.250 0.265 E1 4.32 0.170 e1 4.4 4.7 0.173 0.185 H 9.35 10.40 0.368 0.407 L 1.0 1.78 0.039 0.070 L2 1.27 0.05 L4 0.6 1.02 0.024 0.040 V2 0 8 0 8 Figure 10. DPAK footprint dimensions (in mm) 6/8 DocID6085 Rev 7

Ordering information 3 Ordering information Table 6. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS1045B S1045 75 Tube DPAK 0.30 g STPS1045B-TR S1045 2500 Tape and reel 4 Revision history Table 7. Document revision history Date Revision Changes Jul-2003 3B Last issue 21-Apr-2005 4 IPAK package removed 03-Nov-2005 5 DPAK foot print dimensions updated. 01-Jul-2010 6 Updated Figure 8 Updated ECOPACK statement. 04-Nov-2014 7 Updated DPAK package information, Table 2 and Figure 3. Removed P ARM (T j = 25 C). DocID6085 Rev 7 7/8

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2014 STMicroelectronics All rights reserved 8/8 DocID6085 Rev 7