Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package. Order code V DS R DS(on) max. I D

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1 Datasheet Silicon carbide Power MOSFET 650 V, 90 A, 18 mω (typ., T J = 25 C) in an H²PAK-7 package TAB Features Order code V DS R DS(on) max. I D 1 H2PAK-7 7 SCTH90N65G2V V 25 mω 90 A Very high operating junction temperature capability (T J = 175 C) Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances Drain (TAB) Applications Switching applications Power supply for energy systems High frequency DC-DC converters Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET has been developed using ST s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching losses are almost independent of junction temperature. Product status link SCTH90N65G2V-7 Product summary Order code Marking Package Packing SCTH90N65G2V-7 SCT90N65G2V H 2 PAK-7 Tape and reel DS Rev 2 - June 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage Gate-source voltage (recommended operating values) -10 to 22-5 to +18 I D Drain current (continuous) at T C = 25 C 90 Drain current (continuous) at T C = 100 C 80 V A I (1) DM Drain current (pulsed) 180 A P TOT Total dissipation at T C = 25 C 330 W T stg Storage temperature range C -55 to 175 T j Operating junction temperature range C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 0.45 C/W R thj-amb Thermal resistance junction-ambient 40 C/W DS Rev 2 page 2/14

3 Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage V GS = 0 V, I D = 1 ma 650 V I DSS Zero gate voltage drain current V DS = 650 V, V GS = 0 V 10 V DS = 650 V, V GS = 0 V, T J = 150 C 10 µa I GSS Gate-body leakage current V DS = 0 V, V GS = -10 to 22 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 1 ma V R DS(on) Static drain-source onresistance V GS = 18 V, I D = 50 A V GS = 18 V, I D = 50 A, 25 T J = 175 C mω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 400 V, f = 1 MHz, V GS = 0 V pf C rss Reverse transfer capacitance pf Q g Total gate charge nc V DD = 400 V, I D = 50 A, Q gs Gate-source charge V GS = -5 V/+18 V nc Q gd Gate-drain charge nc R g Gate input resistance f = 1 MHz, I D = 0 A Ω Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit E on E off Turn-on switching energy Turn-off switching energy V DD = 400 V, I D = 50 A, R G = 2.2 Ω, V GS = -5 / to + 18 V E on Turn-on switching energy V DD = 400 V, I D = 50 A, R G = 2.2 Ω, E off Turn-off switching energy V GS = -5 / to + 18 V, T J = 200 C µj DS Rev 2 page 3/14

4 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t f Fall time V DD = 400 V, I D = 50 A, ns t d(off) Turn-off delay time R G = 2.2 Ω, V GS = -5 V/ +18 V ns t r Rise time ns Table 7. Reverse SiC diode characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V SD Forward on voltage I F = 30 A, V GS = 0 V V t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 50 A, di/dt = 4000 A/µs, V DD = 400 V, T J = 25 C nc I RRM Reverse recovery current A DS Rev 2 page 4/14

5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance I D (A) GADG SOAH K δ=0.5 GADG ZTH Operation in this area is limited by R DS(on) t p = 1µs t p = 10µs t p = 100µs t p = 1ms T j 150 C T c = 25 C single pulse t p = 10ms V DS (V) 10-3 Single pulse Zth=k*Rthj-c t p (s) Figure 3. Output characteristics Figure 4. Transfer characteristics I D (A) V GS =20 V V GS =14 V V GS =12 V GADG OCH25 I D (A) V DS = 12 V T= 150 C GADG TCH V GS =10 V 60 T= 25 C V GS =8 V V GS =6 V T= -50 C V DS (V) V GS (V) P TOT (W) Figure 5. Power dissipation GADG PD T J = 175 C T C ( C) Figure 6. Gate charge vs gate-source voltage V GS (V) V DD = 400 V I D = 50 A GADG QVG Q g (nc) DS Rev 2 page 5/14

6 Electrical characteristics (curves) Figure 7. Capacitance variations Figure 8. E off and E on vs I d C (pf) GADG CVR E (µj) GADG EEIC V DD = 400 V, R G = 2.2 Ω,V GS = -5 to18 V C ISS 600 E ts E off C OSS f= 1 MHz C RSS E on V DS (V) I D (A) Figure 9. E off and E on vs T c Figure 10. Normalized V (BR)DSS vs. temperature E (µj) 350 GADG EETC E ts V (BR)DSS (norm.) 1.06 GADG BDV I D = 1 ma V DD = 400 V, I D = 50 A V GS = -5 to 18 V, R G = 2.2 Ω E off E on T C ( C) T J ( C) Figure 11. Normalized gate threshold voltage vs. temperature V GS(th) (norm.) I D = 250 µa GADG VTH Figure 12. Normalized on-resistance vs. temperature R DS(on) (norm.) V GS = 18 V GADG RON T J ( C) T J ( C) DS Rev 2 page 6/14

7 Electrical characteristics (curves) Figure 13. Reverse conduction characteristics (T J = 25 C) Figure 14. Reverse conduction characteristics (T J = 150 C) I D (A) -20 V GS = -5 V GADG SDF25 I D (A) -20 V GS = -5 V GADG SDF V V 5V 10V 15V V DS (V) V 0V 5V 10V 15V V DS (V) Figure 15. Static drain-source on-resistance R DS(on) (mω) V GS =18 V GADG RID I D (A) DS Rev 2 page 7/14

8 Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 3.1 H²PAK-7 package information Figure 16. H²PAK-7 package outline DM _4 DS Rev 2 page 8/14

9 H²PAK-7 package information Table 8. H²PAK-7 package mechanical data Dim. Min. mm Max. A A C e e e E F H H L L L L M R V 0 8 Figure 17. H²PAK-7 recommended footprint footprint_dm _4 Note: Dimensions are in mm. DS Rev 2 page 9/14

10 Packing information 3.2 Packing information Figure 18. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 DS Rev 2 page 10/14

11 Packing information Figure 19. Reel outline REEL DIMENSIONS T 40 mm min. Access hole At slot location B D C A N Full radius Tape slot In core for Tape start G measured At hub Table 9. Tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W DS Rev 2 page 11/14

12 Revision history Table 10. Document revision history Date Revision Changes 30-Mar First release 28-Jun Updated cover page. Updated Section 2 Electrical characteristics and Section 3 Package information. Minor text changes. DS Rev 2 page 12/14

13 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Package information H²PAK-7 package information Packing information...9 Revision history...12 DS Rev 2 page 13/14

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