SCT10N120. Silicon carbide Power MOSFET 1200 V, 12 A, 520 mω (typ., T J = 150 C) in an HiP247 package. Datasheet. Features. Applications.

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1 Datasheet Silicon carbide Power MOSFET 12 V, 12 A, 52 mω (typ., T J = 15 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T J = 2 C) Very fast and robust intrinsic body diode Low capacitance Applications D(2, TAB) HiP247 Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies G(1) Description S(3) AM1475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT1N12 Product summary Order code Marking Package Packing SCT1N12 SCT1N12 HiP247 Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as halogen-free. DS Rev 3 - March 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 12 V V GS Gate-source voltage -1 to 25 V I D Drain current (continuous) at T C = 25 C 12 A I D Drain current (continuous) at T C = 1 C 1 A I (1) DM Drain current (pulsed) 24 A P TOT Total dissipation at T C = 25 C 15 W T stg Storage temperature range C -55 to 2 T j Operating junction temperature range C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.17 C/W R thj-amb Thermal resistance junction-ambient max 4 C/W DS Rev 3 page 2/13

3 Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS V GS(th) Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage V GS = V, I D = 1 ma 12 V V DS = 12 V, V GS = V 1 µa V DS = 12 V, V GS = V, T J = 2 C (1) 1 µa V DS = V, V GS = -1 to 22 V 1 na V DS = V GS, I D = 25 µa V V GS = 2 V, I D = 6 A 5 69 mω R DS(on) Static drain-source on-resistance V GS = 2 V, I D = 6 A, T J = 15 C V GS = 2 V, I D = 6 A, T J = 2 C 52 mω 58 mω 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 4 V, f = 1 MHz, V GS = V pf C rss Reverse transfer capacitance pf Q g Total gate charge nc Q gs Gate-source charge V DD = 8 V, I D = 6 A, V GS = to 2 V nc Q gd Gate-drain charge nc R g Gate input resistance f = 1 MHz, I D = A Ω Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit E on Turn-on switching energy V DD = 8 V, I D = 6 A µj E off Turn-off switching energy R G = 1 Ω, V GS = -5 to 2 V µj E on Turn-on switching energy V DD = 8 V, I D = 6 A µj E off Turn-off switching energy R G = 1 Ω, V GS = -5 to 2 V T J = 15 C µj DS Rev 3 page 3/13

4 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t f Fall time V DD = 8 V, I D = 6 A, ns t d(off) Turn-off delay time R G = 1 Ω, V GS = -5 to 2 V ns t r Rise time ns Table 7. Reverse SiC diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit V SD Diode forward voltage I F = 6 A, V GS = V V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 6 A, di/dt = 2 A/µs V DD = 8 V, T J = 15 C nc I RRM Reverse recovery current A DS Rev 3 page 4/13

5 Electrical characteristics curves 2.1 Electrical characteristics curves I D (A) Figure 1. Safe operating area Operation in this area is limited by R DS(on) GIPG SOA K.8 Figure 2. Thermal impedance GIPG ZTH T j 2 C T c = 25 C single pulse t p =1 µs t p =1 ms t p =1 ms t p (s) Figure 3. Output characteristics (T J = 25 C) Figure 4. Output characteristics (T J = 15 C) I D (A) 1 V GS = 2 V GIPG OCH_25 V GS =16 V I D (A) 1 V GS =16, 2 V GIPG OCH_15 V GS =14 V 8 6 V GS =14 V 8 6 V GS =12 V 4 V GS =12 V 2 V GS =1 V V GS =6 V 4 V GS =1 V 2 V GS =6 V Figure 5. Output characteristics (T J = 2 C) Figure 6. Transfer characteristics I D GIPG OCH_2 (A) V GS =14,16, 2 V 1 I D (A) 1 V DS = 12 V GIPG TCH 8 V GS =12 V T J = 15 C 4 V GS =1 V T J = 25 C V GS =6 V V GS (V) DS Rev 3 page 5/13

6 Electrical characteristics curves Figure 7. Power dissipation Figure 8. Gate charge vs gate-source voltage P TOT (W) GIPG PD V GS (V) GIPG QVG V DD = 8 V I D = 6 A T C ( C) Q g (nc) Figure 9. Capacitance variations Figure 1. Switching energy vs. drain current C (pf) GIPG CVR E (µj) GIPG SWEC C ISS 32 V DD = 8 V R G = 1 Ω V GS = -5 to 2 V E tot E on C OSS 1 1 f = 1 MHz C RSS 16 8 E off Figure 11. Switching energy vs. junction temperature Figure 12. Normalized V (BR)DSS vs. temperature E (µj) GIPG SWET E tot V (BR)DSS (norm.) GIPG BDV 12 E on I D = 1 ma 8 4 V DD = 8 V I D = 6 A R G = 1 Ω V GS = -5 to 2 V E off T J ( C) T j ( C) DS Rev 3 page 6/13

7 Electrical characteristics curves Figure 13. Normalized gate threshold voltage vs. temperature V GS(th) (norm.) I D = 25 µa GIPG VTH Figure 14. Normalized on-resistance vs. temperature R DS(on) (norm.) V GS = 2 V GIPG RON T j ( C) T j ( C) Figure 15. Body diode characteristics (T J = -5 C) Figure 16. Body diode characteristics (T J = 25 C) V GS = -5 V -2-4 V GS = -5 V -2-4 V GS = -2 V -6-6 V GS = V -8 V GS = -2 V -8-1 V GS = V GIPG BDC_-5-12 GIPG BCD_25 Figure 17. Body diode characteristics (T J = 15 C) Figure rd quadrant characteristics (T J = -5 C) V GS = -5 V -2-4 V GS = 15 V V GS =1 V -2-4 V GS = -2 V V GS = V -8-1 V GS = V -12 GIPG BDC_15-1 V GS =5 V -12 GIPG QC_-5 DS Rev 3 page 7/13

8 Electrical characteristics curves Figure rd quadrant characteristics (T J = 25 C) Figure 2. 3 rd quadrant characteristics (T J = 15 C) V GS =1 V V GS = 15 V -6 V GS = 15 V V GS =1 V -6 V GS = V V GS =5 V -8-1 V GS = V V GS =5 V GIPG QC_25-12 GIPG QC_15 DS Rev 3 page 8/13

9 Test circuits 3 Test circuits Figure 21. Switching test waveforms for transition times Figure 22. Clamped inductive switching waveform t On t Off V DS VDS On t d (On) tf t d (Off) tr 9% 9% 1% VDS Off 1% VGS On 9% V GS VGS Off 1% GIPD FSR GIPD FSR DS Rev 3 page 9/13

10 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 HiP247 package information Figure 23. HiP247 package outline _2 Table 8. HiP247 package mechanical data Dim. mm Min. Typ. Max. A A b b b c.4.8 D DS Rev 3 page 1/13

11 HiP247 package information Dim. mm Min. Typ. Max. E e L L L ØP ØR S DS Rev 3 page 11/13

12 Revision history Table 9. Document revision history Date Revision Changes 23-Feb First release 23-May Mar Modified: title, features and Figure 1: "Internal schematic diagram" in cover page Modified: Table 2: "Absolute maximum ratings" and Table 3: "Thermal data" Modified: Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", Table 7: "Switching times" and Table 8: "Reverse SiC diode characteristics" Added: Section 4.1: "Electrical characteristics (curves)" Minor text changes Removed maturity status indication from cover page. The document status is production data. Updated Section 2.1 Electrical characteristics curves. Minor text changes. DS Rev 3 page 12/13

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