STTH10R04. High efficiency rectifier. Description. Features

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STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature

1 STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK 2 compliant component for D²PAK on demand K A NC Description The device is an ultrafast recovery power rectifier dedicated to energy recovery in PDP application. It is especially designed for clamping function in energy recovery block. The compromise between forward voltage drop and recovery time offers optimized performance. Symbol IF(peak) VRRM Table 1: Device summary Value 1 A 4 V Tj (max) 175 C VF (typ) trr (typ.) 1.15 V 15 ns August 217 DocID13971 Rev 2 1/11 This is information on a product in full production.

2 Characteristics STTH1R4 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 4 V IF(RMS) Forward rms current 2 A IF(peak) Peak working forward current TC = 135 C δ =.5 square wave 1 A IFSM Surge non repetitive forward current tp = 1 ms sinusoidal 1 A Tstg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature 175 C Table 3: Thermal parameter Symbol Parameter Max. value Unit Rth(j-c) Junction to case 3.5 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 38 µs, δ < 2% Tj = 25 C - 1 VR = VRRM Tj = 125 C Tj = 25 C IF = 1 A Tj = 125 C µa V To evaluate the conduction losses, use the following equation: P = 1.5 x IF(AV) +.3 x IF 2 (RMS) 2/11 DocID13971 Rev 2

3 STTH1R4 Characteristics Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 C IF =.5 A, Irr =.25 A, IR = 1 A IF = 1 A, VR = 3 V, dif/dt = -5 A/μs ns tfr Forward recovery time Tj = 25 C IF = 1 A, dif/dt = 1 A/μs VFR = 1.1 x VFmax - 14 ns VFP Forward recovery voltage Tj = 25 C IF = 1 A, dif/dt = 1 A/μs - 3 V IRM Reverse recovery current Tj = 125 C IF = 1 A, VR = 2 V dif/dt = 2 A/μs A Sfactor Softness factor DocID13971 Rev 2 3/11

4 Characteristics STTH1R4 1.1 Characteristics (curves) Figure 1: Conduction losses versus average forward current P (W) 18 δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 2 I F(AV) (A) δ =tp/t tp T Figure 2: Forward voltage drop versus forward current I F (A) T j = 125 C (Maximum values) T j = 125 C (Typical values) T j = 25 C (Maximum values) 2 V F (V) Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) /R th(j-c) 1..9 Single pulse t P (s). 1.E-4 1.E-3 1.E-2 1.E-1 1.E Figure 4: Peak reverse recovery current versus dif/dt (typical values) I RM (A) I F = I F(PEAK) V R = 2 V T j = 125 C dif/dt (A/µs) Figure 5: Reverse recovery time versus dif/dt (typical values) t rr (ns) Figure 6: Reverse recovery charges versus dif/dt (typical values) Q rr (nc) I F = I F(PEAK) V R = 2 V T j = 125 C 25 I F = I F(PEAK) V R = 2 V Tj = 125 C di F /dt (A/µs) di F /dt (A/µs) /11 DocID13971 Rev 2

5 STTH1R4 Figure 7: Reverse recovery softness factor versus dif/dt (typical values) S factor I F < 2 x I F(PEAK) V R = 2 V T j = 125 C.1 di F /dt (A/µs) Characteristics Figure 8: Relative variation of dynamic parameters versus junction temperature I RM S factor Q rr I F = I F(PEAK) V R = 2 V Reference: T j = 125 C T j ( C) Figure 9: Forward recovery voltage versus dif/dt (typical values) V FP (V) 12 I F = I F(PEAK) T j = 125 C 1 di F /dt (A/µs) Figure 1: Forward recovery time versus dif/dt (typical values) t fr (ns) I F = I F(PEAK) V FR = 1.1 x V F max. T j = 125 C 2 di F /dt (A/µs) Figure 11: Junction capacitance versus reverse voltage applied (typical values) C (pf) F = 1 MHz V OSC = 3 mv RMS T j = 25 C Figure 12: Thermal resistance junction to ambient versus copper surface under tab R th(j-a) ( C/W) D²PAK Epoxy printed board FR4, copper thickness = 35 µm V R (V) S Cu(cm²) DocID13971 Rev 2 5/11

6 Package information STTH1R4 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Cooling method: by conduction (C) Epoxy meets UL94,V 6/11 DocID13971 Rev 2

7 STTH1R4 2.1 D²PAK package information Figure 13: D²PAK package outline Package information This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID13971 Rev 2 7/11

8 Package information STTH1R4 Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A A b b c c D D D E E E e 2.54 typ..1 e H J L L L R.4 typ..15 V /11 DocID13971 Rev 2

9 STTH1R4 Figure 14: D²PAK recommended footprint (dimensions in mm) Package information DocID13971 Rev 2 9/11

10 Ordering information STTH1R4 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH1R4G-TR STTH1R4G D 2 PAK 1.38 g 1 Tape and reel 4 Revision history Table 8: Document revision history Date Revision Changes 7-Nov-27 1 First issue. 8-Aug Updated features and package silhouette. Minor text changes to improve readability. Updated Section 1: "Characteristics", Section 1.1: "Characteristics (curves)", Section 2: "Package information" and Section 3: "Ordering information". 1/11 DocID13971 Rev 2

11 STTH1R4 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 217 STMicroelectronics All rights reserved DocID13971 Rev 2 11/11

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features

STTH8R06. Turbo 2 ultrafast high voltage rectifier. Description. Features Turbo 2 ultrafast high voltage rectifier Description Datasheet - production data The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as boost diode in continuous mode power factor