Description. Symbol Value Unit SOT23-3L (P010xxL) I T(RMS) up to 0.8 A V DRM /V RRM up to 600 V. I GT From 5 to 200 µa

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P010XX Sensitive standard SCRs up to 0.8 Datasheet production data Description K G TO-92 (P010xx) G K K G SOT-223 (P0102xN) Thanks to highly sensitive triggering levels, the P010XX SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interrupters, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. vailable in through-hole or surface mount packages, the voltage capability of this series has been upgraded since its introduction and is now available up to 600 V. G Table 1. Device summary K Symbol Value Unit SOT23-3L (P010xxL) I T(RMS) up to 0.8 V DRM /V RRM up to 600 V Features I GT From 5 to 200 µ On-state rms current, 0.8 Repetitive peak off-state voltage up to 600 V Triggering gate current from 5 to 200 µ ECOPCK 2 compliant component pril 2014 DocID15197 Rev 2 1/12 This is information on a product in full production. www.st.com

Characteristics P010xx 1 Characteristics Table 2. bsolute ratings (limiting values) P010xx and P010xxN Symbol Parameter Value Unit I T(RMS) IT (V) I TSM On-state rms current (180 conduction angle) verage on-state current (180 conduction angle) Non repetitive surge peak on-state current TO-92 T l = 55 C SOT-223 T amb = 70 C 0.8 TO-92 T l = 55 C SOT-223 T amb = 70 C 0.5 t p = 8.3 ms 8 T j = 25 C t p = 10 ms 7 I ² t I ² t value for fusing t p = 10 ms T j = 25 C 0.24 2 S di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 100 ns F = 60 Hz T j = 125 C 50 /µs I GM Peak gate current t p = 20 µs T j = 125 C 1 P G(V) verage gate power dissipation T j = 125 C 0.1 W T stg T j Storage junction temperature range Operating junction temperature range - 40 to + 150-40 to + 125 C Table 3. bsolute ratings (limiting values) P010xxL Symbol Parameter Value Unit I T(RMS) On-state rms current (180 conduction angle) T amb = 36 C 0.25 IT (V) verage on-state current (180 conduction angle) T amb = 36 C 0.16 I TSM Non repetitive surge peak on-state current t p = 8.3 ms 7 T j = 25 C t p = 10 ms 6 I ² t I ² t value for fusing t p = 10 ms T j = 25 C 0.18 2 S di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 100 ns F = 60 Hz T j = 125 C 50 /µs I GM Peak gate current t p = 20 µs T j = 125 C 0.5 P G(V) verage gate power dissipation T j = 125 C 0.02 W T stg T j Storage junction temperature range Operating junction temperature range - 40 to + 150-40 to + 125 C 2/12 DocID15197 Rev 2

P010xx Characteristics Table 4. Electrical characteristics (1) P010xx and P010xxN Symbol Test conditions Value Unit I GT Max. 200 µ V D = 12 V, R L = 140 Ω V GT Max. 0.8 V V GD V D = V DRM, R L = 3.3 kω, R GK = 1 kω T j = 125 C Min. 0.1 V V RG I RG = 10 µ Min. 8 V I H I T = 50 m, R GK = 1 kω Max. 5 m I L I G = 1 m, R GK = 1 kω Max. 6 m dv/dt V D = 67% V DRM, R GK = 1 kω T j = 125 C Min. 75 V/µs V TM I TM = 1.6, tp = 380 µs T j = 25 C Max. 1.95 V V t0 Threshold voltage T j = 125 C Max. 0.95 V R d Dynamic resistance T j = 125 C Max. 600 mω V DRM = V RRM = 400 V R GK = 1 kω 1 I DRM T j = 25 C V Max. µ I DRM = V RRM = 600 V R GK = 1 kω 10 RRM V DRM = V RRM R GK = 1 kω T j = 125 C 100 1. T j = 25 C, unless otherwise specified Table 5. Electrical characteristics (1) P010xxL Symbol Test conditions P0102xL P0109L Unit I GT Max. 200 1 µ V D = 12 V, R L = 140 Ω V GT Max. 0.8 V V GD V D = V DRM, R L = 3.3 kω, R GK = 1 kω T j = 125 C Min. 0.1 V V RG I RG = 10 µ Min. 8 V I H I T = 50 m, R GK = 1 kω Max. 6 m I L I G = 1 m, R GK = 1 kω Max. 7 m dv/dt V D = 67% V DRM, R GK = 1 kω T j = 125 C Min. 200 100 V/µs V TM I TM = 0.4, tp = 380 µs T j = 25 C Max. 1.7 V V t0 Threshold voltage T j = 125 C Max. 1.0 V R d Dynamic resistance T j = 125 C Max. 1000 mω I DRM T j = 25 C 1 V I DRM = V RRM Max. RRM T j = 125 C 100 µ 1. T j = 25 C, unless otherwise specified DocID15197 Rev 2 3/12 12

Characteristics P010xx Table 6. Electrical device summary Order code Voltage 100 V 200 V 400 V 600 V Sensitivity Package Packing mode P0102 13 X 200 µ TO-92 Bulk P0102 5L3 X 200 µ TO-92 Tape and reel 13 inch P0102L 54 X 200 µ SOT23-3L Tape and reel 7 inch P0102B 13 X 200 µ TO-92 Bulk P0102BL 54 X 200 µ SOT23-3L Tape and reel 7 inch P0102D 13 X 200 µ TO-92 Bulk P0102D 2L3 X 200 µ TO-92 mmopack P0102D 5L3 X 200 µ TO-92 Tape and reel 13 inch P0102DN 54 X X 200 µ SOT-223 Tape and reel 7 inch P0102M 13 X 200 µ TO-92 Bulk P0102MN 54 X 200 µ SOT-223 Tape and reel 7 inch P0109L 54 X 1 µ SOT23-3L Tape and reel 7 inch P0109D 13 X 1 µ TO-92 Bulk P0109D 5L3 X 1 µ TO-92 Tape and reel 13 inch Table 7. Thermal resistance Symbol Parameter Maximum Unit R th(j-a) Junction to case (DC) TO-92 80 C/W R th(j-t) Junction to tab (DC) SOT-223 30 C/W R th(j-a) R th(j-a) TO-92 150 Junction to ambient (DC) C/W S (1) = 5 cm 2 SOT-223 60 Junction to ambient (mounted on FR4 with recommended pad SOT23-3L 400 C/W layout) 1. S = Copper surface under tab. 4/12 DocID15197 Rev 2

P010xx Characteristics Figure 1. Maximum average power dissipation versus average on-state current P010xx and P010xxN Figure 2. Maximum average power dissipation versus average on-state current P010xxL P(W) 1.0 0.9 α = 180 0.8 0.7 0.6 0.5 0.4 0.3 360 0.2 0.1 I T(V) () α 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 P(W) α = 180 I T(V) () 360 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 α Figure 3. verage and DC on-state current versus lead temperature P010xx and P010xxN Figure 4. verage and DC on-state current versus ambient temperature P010xx and P010xxN 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 I T(V) () D.C. (SOT-223) D.C. (TO-92) α = 180 (SOT-223) α = 180 (TO-92) T lead( C) 0 25 50 75 100 125 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 I T(V) () D.C. (SOT-223) D.C. (TO-92) α = 180 (TO-92) α = 180 (SOT-223) T amb( C) Device mounted on FR4 with recomended pad layout for SOT-223 0 25 50 75 100 125 DocID15197 Rev 2 5/12 12

Characteristics P010xx Figure 5. verage and DC on-state current versus case temperature P010xxL Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration 0.30 I T(V) () 1.00 K=[Z th(j-a) /Rth(j-a)] 0.25 0.20 α = 180 D.C. SOT23-3L TO-92 0.15 0.10 SOT-223 0.10 0.05 0.00 T case( C) 0 25 50 75 100 125 t p(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 7. Gate trigger, holding, and latching currents with gate trigger voltage versus junction temperature Figure 8. Relative variation of holding current versus gate-cathode resistance 6.0 5.0 4.0 3.0 2.0 1.0 0.0 IGT, VGT, IH, IL[Tj] /IGT, VGT, ih, il[tj=25 C] I H and IL (R GK =1 KΩ) V GT IGT T ( C) j Relative variations Typical values -40-20 0 20 40 60 80 100 120 140 20 18 16 14 12 10 8 6 4 I H[R GK] / I H[ R GK =1k Ω] Typical values Tj = 25 C 2 R GK(k Ω) 0 1E-2 1E-1 1E+0 1E+1 Figure 9. Relative variation of dv/dt immunity versus gate-cathode resistance Figure 10. Relative variation of dv/dt immunity versus gate-cathode capacitance 10.0 dv/dt[r GK] / dv/dt[ R GK =1k Ω] Tj = 125 C V D = 0.67 x VDRM 10 8 dv/dt[c GK] / dv/dt[ R GK =1k Ω] V D = 0.67 x VDRM Tj = 125 C R GK = 1kΩ 1.0 Typical values 6 4 Typical values 2 0.1 R GK(k Ω) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 C GK(nF) 0 1 2 3 4 5 6 7 6/12 DocID15197 Rev 2

P010xx Characteristics Figure 11. Surge peak on-state current versus number of cycles Figure 12. Non-repetitive surge peak on-state current and corresponding value of I²t I TSM() 8 7 6 5 4 3 2 Repetitive T amb=25 C Non repetitive Tj initial=25 C t p=10ms One cycle 1 Number of cycles 0 1 10 100 1000 100.0 10.0 1.0 2 2 I TSM(), I t ( s) Tj initial = 25 C t p(ms) 0.1 0.01 0.10 1.00 10.00 ITSM For a sinusoidal pulse with width tp < 10 ms I 2 t Figure 13. On-state characteristics P010xx, P010xxN Figure 14. On-state characteristics P010xxL 1E+1 I TM() Tj max.: V t0=0.95v R d=600mω 1E+1 I TM() Tj max.: V t0=1.0v R=1 d Ω 1E+0 Tj=max Maximum values 1E+0 Tj=max T j=25 C Maximum values T j=25 C 1E-1 1E-1 1E-2 V TM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1E-2 V TM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 15. Thermal resistance junction to ambient versus copper surface under tab P010xxN Figure 16. Thermal resistance junction to ambient versus copper surface under tab P010xxL 130 120 110 100 90 80 70 60 50 40 30 20 10 0 R th(j-a) ( C/W) Epoxy printed circuit board FR4, copper thickness = 35 µm S(cm²) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 500 400 300 200 100 0 R th(j-a) ( C/W) Epoxy printed circuit board FR4, copper thickness = 35 µm S(cm²) 0 10 20 30 40 50 60 70 80 90 100 DocID15197 Rev 2 7/12 12

Package information P010xx 2 Package information Epoxy meets UL94, V0 Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: www.st.com. ECOPCK is an ST trademark. Table 8. TO-92 dimensions dimensions Ref Millimeters Inches a Min Typ Max Min Typ Max 1.35 0.053 B C B 4.70 0.185 C 2.54 0.100 F D E D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 Table 9. SOT-223 dimensions Ref. Millimeters Dimensions Inches V c Min. Typ. Max. Min. Typ. Max. 1 e1 D B1 B 1.80 0.071 1 0.02 0.10 0.001 0.004 B 0.60 0.70 0.85 0.024 0.027 0.033 B1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 H E 4 1 2 3 D (1) 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 0.090 e1 4.6 0.181 e E (1) 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V 10 max 1. Do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15mm (0.006inches) 8/12 DocID15197 Rev 2

P010xx Package information Figure 17. Footprint (dimensions in mm) 3.25 1.32 5.16 7.80 1.32 2.30 0.95 Table 10. SOT23-3L dimensions Dimensions E Ref. Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 B e e1 D 1 0 0.1 0 0.004 B 0.3 0.51 0.012 0.02 c 0.085 0.18 0.003 0.007 S 1 D 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 e1 1.7 2.1 0.067 0.083 H L c E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108 L 0.6 typ. 0.024 typ. S 0.35 0.65 0.014 0.026 Figure 18. Footprint (dimensions in mm) 0.95 0.61 1.26 0.73 3.25 DocID15197 Rev 2 9/12 12

Ordering information P010xx 3 Ordering information Figure 19. Ordering information scheme P 01 0x x x Blank xxx Sensitive SCR series Current 01 up to 0.8 Sensitivity 02 = 200 µ 09 = 1 µ Voltage = 100 V B = 200 V D = 400 V M = 600 V Package = TO-92 L = SOT23-3L N = SOT-223 Packing mode 13 = Bulk 2L3 = mmopack 5L3 = Tape and reel 13 inch 54 = Tape and reel 7 inch Table 11. Ordering information Order code Marking Package Weight Base qty Packing mode P0102 13 P0102 TO-92 0.2 g 2500 Bulk P0102 5L3 P0102 TO-92 0.2 g 2000 Tape and reel 13 inch P0102L 54 P2 SOT23-3L 0.01 g 3000 Tape and reel 7 inch P0102B 13 P0102 B TO-92 0.2 g 1000 Bulk P0102BL 54 P2B SOT23-3L 0.01 g 3000 Tape and reel 7 inch P0102D 13 P0102 D TO-92 0.2 g 2500 Bulk P0102D 2L3 P0102 D TO-92 0.2 g 2000 mmopack P0102D 5L3 P0102 D TO-92 0.2 g 2000 Tape and reel 13 inch P0102DN 54 P2D SOT-223 0.11 g 3000 Tape and reel 7 inch P0102M 13 P0102 M TO-92 0.2 g 2500 Bulk P0102MN 54 P2M SOT-223 0.11 g 2000 Tape and reel 7 inch P0109L 54 P9 SOT23-3L 0.01 g 3000 Tape and reel 7 inch P0109D 13 P0109 D TO-92 0.2 g 2500 Bulk P0109D 5L3 P0109 D TO-92 0.2 g 2000 Tape and reel 13 inch 10/12 DocID15197 Rev 2

P010xx Revision history 4 Revision history Table 12. Document revision history Date Revision Changes 24-Nov-2008 1 First issue. 01-pr-2014 2 dded V GT in Figure 7, updated Figure 11 and Table 9 and reformatted to current standard. DocID15197 Rev 2 11/12 12

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