8-Channel/Dual 4-Channel, Low-Leakage, CMOS Analog Multiplexers

Transcription

1 9-272; Rev 3; /4 8-Channel/Dual 4-Channel, The / are monolithic, CMOS analog multiplexers (muxes). The 8-channel is designed to connect one of eight inputs to a common output by control of a 3-bit binary address. The dual, 4- channel is designed to connect one of four inputs to a common output by control of a 2-bit binary address. Both devices can be used as either a mux or a demux. On-resistance is 4Ω max, and the devices conduct current equally well in both directions. These muxes feature extremely low off leakages (less than 2pA at +25 C), and extremely low on-channel leakages (less than 5pA at +25 C). The new design offers guaranteed low charge injection (.5pC typ) and electrostatic discharge (ESD) protection greater than 2V, per method These improved muxes are pin-compatible upgrades for the industry-standard DG58A and DG59A. For similar Maxim devices with lower leakage and charge injection but higher on-resistance, see the MAX328 and MAX329. The / operate from a single +4.5V to +3V supply or from dual supplies of ±4.5V to ±2V. All control inputs (whether address or enable) are TTL compatible (+.8V to +2.4V) over the full specified temperature range and over the ±4.5V to ±8V supply range. These parts are fabricated with Maxim s 44V silicon-gate process. Applications Data-Acquisition Systems Test Equipment Military Radios Guidance and Control Systems General Description Sample-and-Hold Circuits Heads-Up Displays Communications Systems PBX, PABX Features On-Resistance, <4Ω max Transition Time, <5ns On-Resistance Match, <Ω NO-Off Leakage Current, <2pA at +25 C.5pC Charge Injection Single-Supply Operation (+4.5V to +3V) Bipolar-Supply Operation (±4.5V to ±2V) Plug-In Upgrade for Industry-Standard DG58A/DG59A Rail-to-Rail Signal Handling TTL/CMOS-Logic Compatible ESD Protection >2V, per Method 35.7 PART CPE CSE C/D Ordering Information TEMP RANGE C to +7 C C to +7 C C to +7 C PIN-PACKAGE 6 Plastic DIP 6 Narrow SO Dice* ETE -4 C to +85 C 6 Thin QFN (5mm x 5mm) EPE -4 C to +85 C 6 Plastic DIP ESE -4 C to +85 C 6 Narrow SO EJE -4 C to +85 C 6 CERDIP MJE -55 C to +25 C 6 CERDIP** Ordering Information continued at end of data sheet. *Contact factory for dice specifications. **Contact factory for availability. Pin Configurations/Functional Diagrams/Truth Tables / TOP VIEW GND A 6 A NO NO NO2 NO3 NO GND NO5 NO6 NO7 NO2 NO3 NO4 NO5 NO6 NO7 NO8 8 9 NO8 CMOS DECODE LOGIC DIP/SO Pin Configurations/Functional Diagrams/Truth Tables continued at end of data sheet. A A 8-CHANNEL SINGLE-DED MULTIPLEXER Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at , or visit Maxim s website at

2 / ABSOLUTE MAXIMUM RATINGS Voltage Referenced to...-.3v, 44V GND...-.3V, 25V Digital Inputs, NO, (Note )...( - 2V) to ( + 2V) or 3mA (whichever occurs first) Continuous Current (any terminal)...3ma Peak Current, NO or (pulsed at ms, % duty cycle max)...ma Note : Continuous Power Dissipation (TA = +7 C) Plastic DIP (derate.53mw/ C above +7 C)...842mW Narrow SO (derate 8.7mW/ C above +7 C)...696mW 6-Pin TQFN (derate 2.3mW/ C above +7 C)...72mW CERDIP (derate.mw/ C above +7 C)...8mW Operating Temperature Ranges MAX33_C... C to +7 C MAX33_E...-4 C to +85 C MAX33_MJE C to +25 C Storage Temperature Range C to +5 C Lead Temperature (soldering, sec)...+3 C Signals on NO,,, A, A, or exceeding or are clamped by internal diodes. Limit forward current to maximum current ratings. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Dual Supplies ( = +5V, = -5V, GND = V, V AH = +2.4V, V AL = +.8V, T A = T MIN to T MAX, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX (Note 2) UNITS SWITCH Analog Signal Range V NO, V (Note 3) -5 5 V On-Resistance R ON I NO =.2mA, V = ±V T A = T MIN to T MAX Ω On-Resistance Matching Between Channels ΔR ON I NO =.2mA, V = ±V (Note 4) T A = T MIN to T MAX 5 Ω NO-Off Leakage Current (Note 5) I NO(OFF) V = +V, V NO = ±V, V = V T A = T MIN to T MAX C, E M na -Off Leakage Current (Note 5) I (OFF) V NO = ±V, V = +V, V = V V NO = +V, V = ±V, V = V T A = T MIN to T MAX T A = T MIN to T MAX C, E M C, E M na On Leakage Current (Note 5) I (ON) V = ±V, V NO = ±V, sequence each switch on T A = T MIN to T MAX T A = T MIN to T MAX C, E M C, E M na 2

3 ELECTRICAL CHARACTERISTICS Dual Supplies (continued) ( = +5V, = -5V, GND = V, V AH = +2.4V, V AL = +.8V, T A = T MIN to T MAX, unless otherwise noted.) PARAMETER INPUT Input Current with Input Voltage High Input Current with Input Voltage Low SUPPLY Power-Supply Range Positive Supply Current Negative Supply Current DYNAMIC Transistion Time Break-Before-Make Interval Enable Turn-On Time Enable Turn-Off Time Charge Injection (Note 3) SYMBOL I AH I AL I+ I- t TRANS t OP t ON() t OFF() Q V A = 2.4V or 5V V = V or 2.4V, V A = V V = V A = V V = 2.4V, V A(ALL) = 2.4V V = V or 2.4V, V A(ALL) = V, 2.4V or 5V Figure 2 Figure 4 Figure 3 Figure 3 C L = pf, V NO = V, R S = Ω, Figure 6 CONDITIONS T A = T MIN to T MAX T A = T MIN to T MAX T A = T MIN to T MAX T A = T MIN to T MAX T A = T MIN to T MAX MIN TYP MAX (Note 2) ±4.5 ± UNITS µa µa V µa µa µa ns ns ns ns pc / Off Isolation (Note 6) V ISO V = V, R L = kω, f = khz V = 2.4V, Crosstalk Between Channels V CT f = khz, V G = V P-P, -92 db R L = kω, Figure 7 Logic Input Capacitance C IN f = MHz 2 pf f = MHz, NO-Off Capacitance C NO(OFF) V = V NO = V, 3 pf Figure 8 f = MHz, V -Off Capacitance C =.8V, (OFF) T V = V, A = +25 C 6 Figure 8 pf f = MHz, 6 V -On Capacitance C = 2.4V, (ON) T V = V, A = +25 C 9 Figure 8 pf -75 db 3

4 / ELECTRICAL CHARACTERISTICS Single Supply ( = +2V, = V, GND = V, V AH = +2.4V, V AL = +.8V, T A = T MIN to T MAX, unless otherwise noted.) SWITCH Analog Signal Range On-Resistance DYNAMIC PARAMETER Transition Time (Note 3) Enable Turn-On Time (Note 3) Enable Turn-Off Time (Note 3) Charge Injection (Note 3) SYMBOL V NO, V R ON t TRANS t ON() t OFF() Q (Note 3) I NO =.2mA V = 3V or V V NO = 8V, V NO8 = V, V IN = 2.4V, Figure V INH = 2.4V, V INL = V, V NO = 5V, Figure 3 V INH = 2.4V, V INL = V, V NO = 5V, Figure 3 C L = pf, V NO = V, R S = Ω CONDITIONS MIN TYP MAX (Note 2) UNITS V Ω ns ns ns pc Note 2: The algebraic convention where the most negative value is a minimum and the most positive value a maximum is used in this data sheet. Note 3: Guaranteed by design. Note 4: ΔR ON = R ON(MAX) - R ON(MIN). Note 5: Leakage parameters are % tested at the maximum rated hot temperature and guaranteed by correlation at +25 C. Note 6: Worst-case isolation is on channel 4 because of its proximity to the drain pin. Off isolation = 2log V /V NO, where V = output and V NO = input to off switch. 4

5 Typical Operating Characteristics (, unless otherwise noted.) RON (Ω) ON-RESISTANCE vs. V (DUAL SUPPLIES) ±5V ±V ±5V ±2V /9 TOC- RON (Ω) ON-RESISTANCE vs. V OVER TEMPERATURE (DUAL SUPPLIES) = +5V = -5V -55 C +25 C +25 C +85 C /9 TOC-2 RON (Ω) ON-RESISTANCE vs. V (SINGLE SUPPLY) +5V +2V +5V +2V /9 TOC-3 / V (V) V (V) 5 V (V) ON-RESISTANCE vs. V OVER TEMPERATURE (SINGLE SUPPLY) = +5V = V /9 TOC-4 OFF LEAKAGE vs. TEMPERATURE = +5V = -5V /9 TOC-5 ON LEAKAGE vs. TEMPERATURE = +5V = -5V /9 TOC-6 RON (Ω) C +85 C +25 C -55 C OFF LEAKAGE (na).. I (OFF) ON LEAKAGE (na).. I (ON). I NO (OFF). 5 V (V) TEMPERATURE ( C) TEMPERATURE ( C) Qj (pc) CHARGE INJECTION vs. V C L = pf = V V (V) ±5V +5V +2V /9 TOC-7 I+, I- (μa).. SUPPLY CURRT vs. TEMPERATURE I+, V A(ALL) = 2.4V I+, V A = V I TEMPERATURE ( C) 5 /9 TOC-8 TRANSITION TIME vs. POWER SUPPLIES 9 R L = kω 8 7 SINGLE SUPPLY DUAL SUPPLIES 2 ±5 ± ±5 ±2 OR 5V OR V (SINGLE) (SINGLE) SUPPLY VOLTAGE (V) ttrans (ns) /9 TOC-9

6 / Pin Description PIN NAME FUNCTION DIP/SO THIN QFN DIP/SO THIN QFN, 5, 6, 5, 4, 3 A,, A Address Inputs, 6 5, 4 A, A Address Inputs Enable 3 3 Negative-Supply Voltage Input NO NO4 Analog Inputs Bidirectional NOA NO4A Analog Inputs Bidirectional 8 6 Analog Output Bidirectional 8, 9 6, 7 A, B Analog Outputs Bidirectional NO8 NO5 Analog Inputs Bidirectional 3 8 NO4B NOB Analog Inputs Bidirectional Positive-Supply Voltage Input GND Ground EP EP Exposed Pad Exposed Pad. Connect to. Applications Information Operation with Supply Voltages Other than 5V Using supply voltages less than ±5V will reduce the analog signal range. The / switches operate with ±4.5V to ±2V bipolar supplies or with a +4.5V to +3V single supply. Connect to GND when operating with a single supply. Both device types can also operate with unbalanced supplies such as +24V and -5V. The Typical Operating Characteristics graphs show typical on-resistance with 2V, 5V, V, and 5V supplies. (Switching times increase by a factor of two or more for operation at 5V.) Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings, because stresses beyond the listed ratings may cause permanent damage to the devices. Always sequence on first, then, followed by the logic inputs NO and. If power-supply sequencing is not possible, add two small signal diodes in series with supply pins for overvoltage protection (Figure ). Adding diodes reduces the analog signal range to V below and V above, but does not affect the devices low switch resistance and low leakage characteristics. Device operation is unchanged, and the difference between and should not exceed 44V. V g NO Figure. Overvoltage Protection Using External Blocking Diodes 6

7 Test Circuits/Timing Diagrams 5Ω 5Ω A A A A GND +5V -5V +5V NO NO2-NO7 NO8 NO4B B GND -5V NOB NOA-NO4A kω kω ±V +V ±V +V pf pf LOGIC INPUT SWITCH OUTPUT +3V V V NO V V NO8 t TRANS ON 5% 9% ON tr < 2ns t f < 2ns 9% t TRANS / Figure 2. Transition Time +5V 5Ω A A GND NO NO2-NO8 kω -5V pf LOGIC INPUT +3V V 5% tr < 2ns t f < 2ns A -5V +5V NOB NOA-NO4A, NO2B-NO4B, A -5V SWITCH OUTPUT V O t ON() V 9% % t OFF() 5Ω A B GND kω 35pF -5V Figure 3. Enable Switching Time 7

8 / Test Circuits/Timing Diagrams (continued) +2.4V 5Ω A A GND +5V NO-NO8-5V kω +5V pf LOGIC INPUT SWITCH OUTPUT +3V V V 5% 8% t OP tr < 2ns t f < 2ns Figure 4. Break-Before-Make Interval +5V R S V S CHANNEL SELECT NO A A GND -5V C L = pf LOGIC INPUT +3V V OFF ON OFF Δ Δ IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER ERROR Q WH THE CHANNEL TURNS OFF. Q = C L x Δ Figure 5. Charge Injection 8

9 Test Circuits/Timing Diagrams (continued) R S = 5Ω V IN NO NO8 A A GND +5V nf nf -5V R L kω R L = kω R S = 5Ω NO NO2 NO8 A A GND +5V nf nf -5V / OFF ISOLATION = 2log V IN CROSSTALK = 2log V IN Figure 6. Off-Isolation Figure 7. Crosstalk +5V CHANNEL SELECT A A GND NO NO8 METER IMPEDANCE ANALYZER f = MHz -5V Figure 8. NO/ Capacitance 9

10 / Pin Configurations/Functional Diagrams/Truth Tables (continued) TOP VIEW GND A 6 A NOA 2 5 GND NO2A 3 4 NO3A A NOA 4 3 NOB NO4A NO2A NO3A NO2B NO3B NOB NO2B NO4A 7 N4B B A 8 9 B NO3B NO4B DIP/SO CMOS DECODE LOGIC A A DUAL 4-CHANNEL MULTIPLEXER A A X X X ON SWITCH None A A X X ON SWITCH None LOGIC V AL.8V, LOGIC V AH 2.4V LOGIC V AL.8V, LOGIC V AH 2.4V

11 Ordering Information (continued) PART CPE CSE C/D ETE EPE ESE EJE MJE TEMP RANGE C to +7 C C to +7 C C to +7 C -4 C to +85 C -4 C to +85 C -4 C to +85 C -4 C to +85 C -55 C to +25 C *Contact factory for dice specifications. **Contact factory for availability. PIN-PACKAGE 6 Plastic DIP 6 Narrow SO Dice* 6 Thin QFN (5mm x 5mm) 6 Plastic DIP 6 Narrow SO 6 CERDIP 6 CERDIP** / Pin Configurations/Functional Diagrams/Truth Tables (continued) TOP VIEW A A A A GND LOGIC 2 GND LOGIC 2 NO 2 NOA 2 NOB NO2 3 NO5 NO2A 3 NO2B NO3 4 9 NO6 NO3A 4 9 NO3B NO4 NO8 NO7 NO4A A B NO4B Thin QFN Thin QFN

12 / Chip Topographies A A GND A A N.C. GND NO NO5 NOA NOB NO2 NO6 NO2A NO2B NO3 N.C..4" (2.89mm) NO3A NO3B.4" (2.89mm) NO4 N7 NO4A N4B NO8 A B.78" (.98mm).78" (.98mm) N.C. = NO INTERNAL CONNECTION TRANSISTOR COUNT: 224 SUBSTRATE IS INTERNALLY CONNECTED TO Note: On Thin QFN packages connect exposed pad to. TRANSISTOR COUNT: 224 SUBSTRATE IS INTERNALLY CONNECTED TO 2

13 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to QFN THIN.EPS / Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 2 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.

14 GLISH?????????? WHAT'S NEW PRODUCTS SOLUTIONS DESIGN APPNOTES SUPPORT BUY PANY MEMBERS Part Number Table Notes: See the QuickView Data Sheet for further information on this product family or download the full data sheet (PDF, 256kB). Other options and links for purchasing parts are listed at: Didn't Find What You Need? Ask our applications engineers. Expert assistance in finding parts, usually within one business day. Part number suffixes: T or T&R = tape and reel; + = RoHS/lead-free; # = RoHS/lead-exempt. More: See full data sheet or Part Naming Conventions. * Some packages have variations, listed on the drawing. "PkgCode/Variation" tells which variation the product uses. Part Number Free Sample Buy Direct Package: TYPE PINS SIZE DRAWING CODE/VAR * Temp RoHS/Lead-Free? EJE MJE C/D C eramic DIP;6 pin;.3" Dwg: 2-45A (PDF) Use pkgcode/variation: J6-4* C eramic DIP;6 pin;.3" Dwg: 2-45A (PDF) Use pkgcode/variation: J6-4* -4C to +85C RoHS/Lead-Free: No -55C to +25C RoHS/Lead-Free: No RoHS/Lead-Free: No CPE CPE+ EPE+ EPE PDIP;6 pin;.3" Dwg: 2-43D (PDF) Use pkgcode/variation: P6-* PDIP;6 pin;.3" Dwg: 2-43D (PDF) Use pkgcode/variation: P6+* PDIP;6 pin;.3" Dwg: 2-43D (PDF) Use pkgcode/variation: P6+* PDIP;6 pin;.3" Dwg: 2-43D (PDF) Use pkgcode/variation: P6-* C to +7C C to +7C RoHS/Lead-Free: No RoHS/Lead-Free: Yes -4C to +85C RoHS/Lead-Free: Yes -4C to +85C RoHS/Lead-Free: No

15 EEE+ QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6+6* -4C to +85C RoHS/Lead-Free: Yes EEE+T -4C to +85C RoHS/Lead-Free: Yes CEE+T C to +7C RoHS/Lead-Free: Yes CEE+ CEE CEE-T EEE-T EEE CSE CSE+T CSE+ CSE-T ESE+T ESE+ ESE-T ESE QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6+6* QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6-6* QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6-6* QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6-6* QSOP;6 pin;.5" Dwg: 2-55F (PDF) Use pkgcode/variation: E6-6* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6-2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6+2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6+2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6-2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6+2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6+2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6-2* SOIC;6 pin;.5" Dwg: 2-4B (PDF) Use pkgcode/variation: S6-2* C to +7C C to +7C C to +7C RoHS/Lead-Free: Yes RoHS/Lead-Free: No RoHS/Lead-Free: No -4C to +85C RoHS/Lead-Free: No -4C to +85C RoHS/Lead-Free: No C to +7C C to +7C C to +7C C to +7C RoHS/Lead-Free: No RoHS/Lead-Free: Yes RoHS/Lead-Free: Yes RoHS/Lead-Free: No -4C to +85C RoHS/Lead-Free: Yes -4C to +85C RoHS/Lead-Free: Yes -4C to +85C RoHS/Lead-Free: No -4C to +85C RoHS/Lead-Free: No

16 ETE THIN QFN;6 pin;5x5x.8mm Dwg: 2-4K (PDF) Use pkgcode/variation: T655-2* -4C to +85C RoHS/Lead-Free: No ETE-T -4C to +85C RoHS/Lead-Free: No ETE+ THIN QFN;6 pin;5x5x.8mm Dwg: 2-4K (PDF) Use pkgcode/variation: T655+2* -4C to +85C RoHS/Lead-Free: Yes ETE+T -4C to +85C RoHS/Lead-Free: Yes Didn't Find What You Need? CONTACT US: SD US AN C opyright 27 by Maxim Integrated Products, Dallas Semiconductor Legal Notices P rivacy P olicy