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1 6 On-Resistance, +12 V, ± V, + V, +3 V, SPST and SPDT Switches DESRIPTION analog switches are designed to operate from +3 V to +16 V single supply or ± 3 V to ± 8 V dual supply and are fully specified at +12 V, ± V, + V, and +3 V. The are lower voltage pin-for-pin compatible companion devices to the industry standard DG417, DG418, and DG419. Each switch conducts equally well in both directions when on, blocks input voltages up to the supply level when off, and exhibits break before switching action. Fabricated with advanced MOS technology, the parts provide low on resistance and fast switching speed with low power dissipation. The operating temperature range is -4 to +8 and devices are available in 8 lead TSSOP and SOI packages. FEATURES +3 V to +16 V single supply, or ± 3 V to ± 8 V dual supply Available On resistance: 6 for DG417LE, DG418LE 11 for DG419LE Available Fast switching speeds: t ON = 2 ns, t OFF = 1 ns Break-before-make switching for DG419LE Fully specified at +12 V, ± V, + V, and +3 V to analog signal range MOS / TTL compatible ontrol logic input can be over 8 pin TSSOP and 8 pin SOI packages Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLIATIONS Data acquisition systems Medical instruments Precision instruments ommunications systems Automated test equipment Sample and hold circuit Audio and video signal routing FUNTIONAL BLOK DIAGRAM AND P ONFIGURATION DG417LE, DG418LE Dual-in-line, MSOP-8 and SOI-8 DG419LE Dual-in-line, MSOP-8 and SOI-8 N/NO NO Not connected 2 7 N 2 7 V - GND 3 6 GND Top view TRUTH TABLE (DG417LE, DG418LE) LOGI DG417LE DG418LE On Off 1 Off On ORDERG FORMATION (DG417LE, DG418LE) TEMP. RANGE PAKAGE PART NUMBER -4 to +8 8-pin narrow SOI DG417LEDY-T1-GE4 DG418LEDY-T1-GE4 8-pin MSOP DG417LEDQ-T1-GE3 DG418LEDQ-T1-GE3 4 Top view TRUTH TABLE (DG419LE) LOGI N NO On Off 1 Off On ORDERG FORMATION (DG419LE) TEMP. RANGE PAKAGE PART NUMBER -4 to +8 8-pin narrow SOI DG419LEDY-T1-GE4 8-pin MSOP DG419LEDQ-T1-GE3 S Rev., 23-Apr-18 1 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

2 ABSOLUTE MAXIMUM RATGS PARAMETER LIMIT UNIT,, reference to -.3 to 18 reference to GND -.3 to 18 GND reference to -.3 to 18 V, N, NO reference to a -.3 to ( +.3) or 3 ma, whichever occurs first ontinuous current (any terminal) 3 Peak current, S or D (pulsed 1 ms, % duty cycle) ma Storage temperature (DQ, DY suffix) -6 to +1 Power dissipation (packages) b 8-pin MSOP c 32 8-pin SOI c 4 mw ESD / HBM JS-1 2 ESD / DM JS-2 2 V Latch up JESD78 3 ma Notes a. Signals on N, NO, or exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to P board c. Derate 6. mw/ above 2 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev., 23-Apr-18 2 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

3 SPEIFIATIONS (Single supply 12 V) TEST ONDITIONS D SUFFIX LIMITS UNLESS OTHERWISE SPEIFIED PARAMETER SYMBOL TEMP. = 12 V, = V TYP. c -4 to +8 UNIT = V, V = 2.4 V,.8 V f M. d MAX. d Analog Switch Analog signal range e V ANALOG Full - 12 V =.8 V, = V Room 6-7 I NO, I N = ma, V = 2 V / 9 V, Drain-source DG417LE, DG418LE only Full R on-resistance DS(on) =.8 V, = V Room I NO, I N = ma, V = 2 V / 9 V, Full I NO(off) Room ± I N(off) V = 1 V / 11 V Full - - Switch off leakage current V NO, V N = 11 V / 1 V Room ± I (off) na Full - - Switch on leakage current I (on) V NO, V N = V = 11 V / 1 V Room ± Full - - Digital ontrol Input current I L or I H Full μa Dynamic haracteristics Turn-on time t ON Room 2-38 R L = 3, L = 3 pf Full Turn-off time t OFF V NO, V N = V Room 1-32 Full ns, V Break-before-make time t N, V NO = V BBM R L = 3, L = 3 pf Room harge injection e Q J V GEN = V, R GEN =, L = 1 nf Room p Off-isolation e OIRR Room R L =, L = pf, f = 1 MHz hannel-to-channel crosstalk e X TALK Room db Source off capacitance e NO(off) V = V or, f = 1 MHz, Room N(off) DG417LE,DG418LE only Drain-on capacitance e ON Room Source off capacitance e NO(off) V = V or, f = 1 MHz, Room N(off) Drain-on capacitance e ON Room Power Supplies Positive supply current I+ Room.9-1 Full - - Room Negative supply current I- Full V = V or Room.2-1 Logic supply current I L Full - - Room Ground current I GND Full pf μa S Rev., 23-Apr-18 3 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

4 SPEIFIATIONS (Dual supply ± V) TEST ONDITIONS D SUFFIX LIMITS UNLESS OTHERWISE SPEIFIED PARAMETER SYMBOL TEMP. = V, = - V b TYP. c -4 to +8 UNIT = V, V = 2.4 V,.8 V f M. d MAX. d Analog Switch Analog signal range e V ANALOG Full - - V Drain-source on-resistance Switch off leakage current a = V, = - V Room 6-8 I NO, I N = ma, V = ± 3. V DG417LE / DG418LE only Full - - R DS(on) = V, = - V Room 12-1 I NO, I N = ma, V = ± 3. V Full I NO(off) Room ± I N(off) =. V, = -. V Full - - V = ± 4. V I V NO, V N = ± 4. V Room ± (off) Full - - hannel on =. V, = -. V Room ± leakage current a I (on) V NO, V N = V = ± 4. V Full - - Digital ontrol Input current a I L or I H Full μa Dynamic haracteristics Turn-on time e t ON Room R L = 3, L = 3 pf Full Turn-off time e t OFF V NO, V N = ± 3. V Room 2-4 Full - - ns Break-before-make time e, V t NO, V N = 3. V BBM R L = 3, L = 3 pf Room R Transition time t L = 3, L = 3 pf TRANS V S1 = ± 3. V, V S2 = ± 3. V Room harge injection e Q J V GEN = V, R GEN =, L = 1 nf Room p Off-isolation e OIRR Room R L =, L = pf, f = 1 MHz hannel-to-channel crosstalk e X TALK Room db na Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) DG417LE / DG418LE only Drain-on capacitance e ON Room Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) Drain-on capacitance e ON Room Power Supplies Positive supply current e I+ Room.7-1 Full - - Negative supply current e Room I- Full V = V or Logic supply current e Room.2-1 I L Full - - Ground current e Room I GND Full pf μa S Rev., 23-Apr-18 4 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

5 SPEIFIATIONS (Single supply V) TEST ONDITIONS D SUFFIX LIMITS UNLESS OTHERWISE SPEIFIED PARAMETER SYMBOL TEMP. = V, = V b TYP. c -4 to +8 UNIT = V, V = 2.4 V,.8 V f M. d MAX. d Analog Switch Analog signal range e V ANALOG Full - V Drain-source on-resistance e Switch off leakage current a = 4. V, I NO, I N = ma Room V = 1 V, 3. V DG417LE / DG418LE only Full R DS(on) = 4. V, I NO, I N = ma Room 24-3 V = 1 V, 3. V Full I NO(off) Room ± I N(off) =. V, = V Full - - V = 1 V / 4. V I V NO, V N = 4. V / 1 V Room ± (off) Full - - Switch on =. V, = V Room ± leakage current a I (on) V NO, V N = V = 1 V / 4. V Full - - Digital ontrol Input current a I L or I H Full μa Dynamic haracteristics Turn-on time e t ON Room R L = 3, L = 3 pf Full Turn-off time e t OFF V NO, V N = 3. V Room Full ns Break-before-make time e, V t NO, V N = 3. V BBM R L = 3, L = 3 pf Room harge injection e Q J V GEN = V, R GEN =, L = 1 nf Room - - p Off-isolation e OIRR Room R L =, L = pf, f = 1 MHz hannel-to-channel crosstalk e X TALK Room db na Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) DG417LE / DG418LE only Drain-on capacitance e ON Room Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) Drain-on capacitance e ON Room Power Supplies Positive supply current e I+ Room.6-1 Full - - Negative supply current e Room I- Full V = V or Logic supply current e Room.2-1 I L Full - - Ground current e Room I GND Full pf μa S Rev., 23-Apr-18 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

6 SPEIFIATIONS (Single supply 3 V) PARAMETER SYMBOL TEST ONDITIONS UNLESS OTHERWISE SPEIFIED = 3 V, = V = 3 V, V = 2 V,.4 V f TEMP. b Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test b. Room = 2, full = as determined by the operating temperature suffix c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet e. Guaranteed by design, not subject to production test f. V = input voltage to perform proper function TYP. c D SUFFIX LIMITS -4 to +8 M. d MAX. d Analog Switch Analog signal range e V ANALOG Full - 3 V Drain-source on-resistance Switch off leakage current a R DS(on) = 2.7 V, = V I NO, I N = ma, V =. V, 2.2 V DG417LE / DG418LE only = 2.7 V, = V I NO, I N = ma, V =. V, 2.2 V Room Full Room Full I NO(off) Room ± I = 3.3 V, = V N(off) Full - - V = 1 V, 2 V, I V NO, V N = 2 V, 1 V Room ± (off) Full - - hannel on = 3.3 V, = V Room ± leakage current a I (on) V NO, V N = V = 1 V, 2 V Full - - Digital ontrol Input current a I L or I H Full μa Dynamic haracteristics Turn-on time t ON Room 9-77 R L = 3, L = 3 pf Full Turn-off time t OFF V NO, V N = 1. V Room 33-4 Full ns Break-before-make time e, V t NO, V N = 1. V BBM R L = 3, L = 3 pf Room harge injection e Q J V GEN = V, R GEN =, L = nf Room p Off-isolation e OIRR Room R L =, L = pf, f = 1 MHz hannel-to-channel crosstalk e X TALK Room db Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) DG417LE / DG418LE only hannel on capacitance e D(on) Room Source off capacitance e NO(off) V = V or, f = 1 MHz Room N(off) hannel on capacitance e D(on) Room pf Power Supplies Positive supply current e I+ Room. - 1 Full - - Negative supply current e Room I- Full V = V or Logic supply current e Room.2-1 I L Full - - Ground current e Room I GND Full UNIT na μa S Rev., 23-Apr-18 6 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

7 TYPIAL HARATERISTIS (2, unless otherwise noted) = +2.7 V = +3. V = +4. V DG419LE = +. V = +.8 V DG419LE V± = ± 4. V V± = ±. V = +12 V V± = ±. V R DS(on) vs. V and Supply Voltage R DS(on) vs. V and Supply Voltage 4 3 = +2.7 V DG417/8LE 8 7. DG417/8LE = +3. V = +4. V = +. V = +.8 V = +12 V V± = ± 4. V V± = ±. V V± = ±. V R DS(on) vs. V and Supply Voltage R DS(on) vs. V and Supply Voltage DG419LE -4 = +.8 V DG419LE -4 V± = ± V S Rev., 23-Apr-18 7 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

8 TYPIAL HARATERISTIS (2, unless otherwise noted) DG419LE = +4. V DG419LE = +2.7 V DG417/8LE =+.8 V DG417/8LE V± = ± V DG417/8LE =+4.V DG417/8LE =+2.7V S Rev., 23-Apr-18 8 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

9 TYPIAL HARATERISTIS (2, unless otherwise noted) I NO/N(OFF),V = 1 V, V NO/N = 11 V I NO/N(OFF),V = 11 V, V NO/N = 1 V I NO/N(OFF),V = -4. V, V NO/N = 4. V I NO/N(OFF),V = 4. V, V NO/N = -4. V Leakage urrent (pa) I (OFF),V = 11 V, V NO/N = 1 V I (OFF),V = 1 V, V NO/N = 11 V I (ON),V /NO/N = 11 V Leakage urrent (pa) I (OFF),V = 4. V, V NO/N = -4. V I (OFF),V =-4. V, V NO/N = 4. V I (ON),V /NO/N = 4. V -12 = +12 V I (ON),V /NO/N = 1 V Temperature ( ) -12 V ± = ±. V I (ON),V /NO/N = -4. V Temperature ( ) Leakage urrent vs. Temperature Leakage urrent vs. Temperature 6 I NO/N(OFF),V = 1 V, V NO/N = 4. V 6 I NO/N(OFF),V = 1 V, V NO/N = 2 V 4 I NO/N(OFF),V = 4. V, V NO/N = 1 V 4 I NO/N(OFF),V = 2 V, V NO/N = 1 V Leakage urrent (pa) I (OFF),V = 4. V, V NO/N = 1 V I (OFF),V = 1 V, V NO/N = 4. V I (ON),V /NO/N = 4. V = +. V I (ON),V /NO/N = 1 V Temperature ( ) Leakage urrent (pa) I (OFF),V = 2 V, V NO/N = 1 V I (OFF),V = 1 V, V NO/N = 2 V I (ON),V /NO/N = 2 V = +3.3 V I (ON),V /NO/N = 1 V Temperature ( ) Leakage urrent vs. Temperature Leakage urrent vs. Temperature I+ - Supply urrent (na) = +12 V = or GND Temperature ( ) Loss, OIRR, X TALK (db) Loss OIRR -6-7 X TALK V± = ± V -1 K 1M M M 1G Frequency (Hz) Supply urrent vs. Temperature Insertion Loss, Off-Isolation rosstalk vs. Frequency S Rev., 23-Apr-18 9 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

10 TYPIAL HARATERISTIS (2, unless otherwise noted) I+ - Supply urrent (μa) = + V = +12 V = +3 V.1 K K 1M M Input Switching Frequency (Hz) Supply urrent vs. Input Switching Frequency I+ - Supply urrent (μa) V± = ± V I+ I- I GND.1 K M Input Switching Frequency (Hz) Supply urrent vs. Input Switching Frequency 8 3 t ON, t OFF - Switching Time (ns) = +3 V, t ON = + V, t ON = +3 V, t OFF = + V, t OFF t ON, t OFF - Switching Time (ns) V± = ± V, t ON = +12 V, t ON V± = ± V, t OFF = +12 V, t OFF - 1 Temperature ( ) Switching Time vs. Temperature - Temperature ( ) Switching Time vs. Temperature 1 V - Switching Threshold (V) to +12 V H V L = = Dual Supply Voltage (V) V - Switching Threshold (V) to +12 V H V L = Single Supply Voltage (V) Switching Threshold vs. Dual Supply Voltage Switching Threshold vs. Single Supply Voltage S Rev., 23-Apr-18 Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

11 TYPIAL HARATERISTIS (2, unless otherwise noted) Q J - harge Injection (p) DG417/8LE = 3 V V± = ± V = 12 V = V = 16 V Q J - harge Injection (p) = 3 V V± = ± V = V = 12 V DG419LE = 16 V V N/NO - Analog Voltage (V) V N/NO - Analog Voltage (V) harge Injection vs. Analog Voltage harge Injection vs. Analog Voltage I L - Supply urrent (μa) = 12 V = V = 3 V = V (V) Supply urrent vs. Enable Input Voltage S Rev., 23-Apr Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

12 SHEMATI DIAGRAM (Typical channel) N/NO buffer Level shifter Body snatcher PH Body snatcher GND V TEST IRUITS Logic input V H % t r < ns t f < ns Switch input V NO or N GND R L 3 Switch output L 3 pf V OUT Switch output V L V V OUT t ON 9 % t OFF.9 x V OUT L (includes fixture and stray capacitance) R OUT = V R L + R ON Note Logic input waveform is inverted for switches that have the opposite logic sense control Fig. 1 - Switching Time Logic input V H t r < ns t f < ns V NO NO V O V L V N N R L 3 L 3 pf V N = V NO V O 9 % GND Switch output V t D t D L (includes fixture and stray capacitance) Fig. 2 - Break-Before-Make (DG419LE) S Rev., 23-Apr Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

13 TEST IRUITS + V + 1 V V S1 NO or N V O Logic input V H V L % t r < ns t f < ns V S2 N or NO R L 3 L 3 pf V S1 V 1 t TRANS t TRANS 9 % GND Switch output V S2 V 2 % L (includes fixture and stray capacitance) V O = V S R L R L + R ON Fig. 3 - Transition Time (DG419LE) V O R g NO or N V O V O OFF ON OFF V g GND L 1 nf Q = V O x L dependent on switch configuration input polarity determined by sense of switch. V = - Fig. 4 - harge Injection V + V S V V + NO or N R g = V or 2.4 V V OUT N or NO GND X TA LK isolation = 2 log = RF bypass V OUT V Fig. - rosstalk (DG419LE) S Rev., 23-Apr Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

14 TEST IRUITS NO or N R g = V, 2.4 V R L GND Off isolation = 2 log = RF bypass V V NO/N Fig. 6 - Off Isolation Meter V, 2.4 V NO or N HP4192A impedance analyzer or equivalent GND f = 1 MHz Fig. 7 - hannel apacitances maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S Rev., 23-Apr Document Number: ARE SUBJET TO SPEIFI DISLAIMERS, SET FORTH AT

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