3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers

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1 G948E, G949E 3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers ESCRIPTION The G948E, G949E uses BiCMOS wafer fabrication technology that allows the G948E, G949E to operate on single and dual supplies. Single supply voltage ranges from 3 V to 16 V while dual supply operation is recommended with ± 3 V to ± 8 V. The G948E is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A,, ). The G949E is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A, ). Break-before-make switching action to protect against momentary crosstalk between adjacent channels. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device terminations. The G948E, G949E are offered in a QFN package that has a nickel-palladium-gold device terminations and is represented by the lead (Pb)-free -E4 suffix. The nickel-palladium-gold device terminations meet all the JEEC standards for reflow and MSL ratings. FEATURES 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply operation Low on-resistance - R ON : 3.2 typ. Fast switching: t ON - 36 ns, t OFF - 24 ns Break-before-make guaranteed Low leakage TTL, CMOS, LV logic (3 V) compatible 25 V ES protection (HBM) Material categorization: for definitions of compliance please see BEFITS Fast switching speed Low switch resistance Wide operation voltage range Simple logic interface APPLICATIONS Automatic test equipment Process control and automation ata acquisition systems Meters and instruments Medical and healthcare systems Communication systems Audio and video signal routing Relay replacement Battery powered systems FUNCTIONAL BLOCK IAGRAM AN PIN CONFIGURATION G948E QFN16 S G949E QFN16 S 1b b a S S 5 S 2b 1 12 S 1a GN 2 11 S 6 GN 2 11 S 2a S 3 3 S 3b 3 S 4 4 ecoder / driver 9 S 7 S 4b 4 ecoder / driver 95 S 3a A S 8 A S 4a Top view Top view Note QFN16 package central exposed pad has no electrical connection inside the chip. It can be connected GN,,, or left floating. S Rev. A, 25-Jul-16 1 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 G948E, G949E TRUTH TABLE AN ORERING INFORMATION TRUTH TABLE G948E A ON SWITCH X X X 1 None TRUTH TABLE G949E A ON SWITCH X X 1 None X = do not care For low and high voltage levels for V AX and V consult igital Control parameters for specific operation. See specifications tables for: Single supply 12 V ual supply = 5 V, = -5 V Single supply 5 V Single supply 3 V ORERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER MIN. ORER / PACK. QUANTITY -4 C to +85 C 16-pin QFN (4 mm x 4 mm) (variation 1) G948EN-T1-GE4 G949EN-T1-GE4 Tape and reel, 25 units Tape and reel, 25 units ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER LIMIT UNIT Voltage referenced to -.3 to +18 GN to 18 V igital inputs a, V S, V () -.3 to () +.3 Current (any terminal except S or ) 3 Continuous current, S or ma Peak current, S or (pulsed at 1 ms, % duty cycle max.) 2 Package solder reflow conditions (lead (Pb)-free assembly) d 16-pin (4 x 4 mm) QFN 26 + / -5 Storage temperature -65 to +15 C Power dissipation (package) b, (T A = 7 C) 16-pin (4 x 4 mm) QFN c 188 mw ES human body model (HBM), per ANSI / ESA / JEEC JS-1 25 V Latch up current, per JES78 4 ma Notes a. Signals on SX, X or INX exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. erate 23.5 mw/ C above 7 C. d. Manual soldering with soldering iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. A, 25-Jul-16 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 G948E, G949E SPECIFICATIONS (Single Supply 12 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 12 V, ± %, = V V A, V =.8 V or 2.4 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 12 V =.8 V, V On-resistance R = 2 V or 9 V, I S = 5 ma Room ON sequence each switch on Full Room =.8 V, V = 2 V or 9 V, I S = 5 ma On-resistance flatness i R ON flatness Room Switch off leakage current I S(off) V = 2.4 V, V = 11 V or 1 V, V S = 1 V or 11 V I (off) na Channel on leakage current I (on) V = V, V S = V = 1 V or 11 V igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current I IN V AX = V = 2.4 V or.8 V Full -1-1 μa ynamic Characteristics Transition time t TRANS V S1 = 8 V, V S8 = V, (G948E) V S1b = 8 V, V S4b = V, (G949E) see fig. 2 Room Full V Break-before-make time t S(all) = V A = 5 V Room BBM see fig. 4 Full ns Room Enable turn-on time t ON() VAX = V, V S1 = 5 V (G948E) Full V AX = V, V S1b = 5 V (G949E) Enable turn-off time t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, V G = V, R G = Room pc Off isolation e, h OIRR Room f = khz, R L = 1 k Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 2.4 V G948E Room G949E Room rain off capacitance e C (off) f = 1 MHz, V = V, V = 2.4 V G948E Room G949E Room pf rain on capacitance e C (on) f = 1 MHz, V = V, V = V G948E Room G949E Room Power Supplies Power supply current I+ V = V A = V or Room μa UNIT S Rev. A, 25-Jul-16 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 G948E, G949E SPECIFICATIONS (ual Supply = 5 V, = -5 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 5 V, = -5 V, ± % V A, V =.8 V or 2 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full -5-5 V = 4.5 V, = -4.5 V, V On-Resistance R = ± 3.5 V, I S = 5 ma Room ON sequence each switch on Full Room = 4.5 V, = -4.5 V, V = ± 3.5 V, I S = 5 ma On-resistance flatness i R ON Flatness Room I S(off) Switch off leakage current a = 5.5, = -5.5 V V = 2.4 V, V = ± 4.5 V, V S = ± 4.5 V I (off) na Channel on leakage current a = 5.5 V, = -5.5 V I (on) V = V, V = ± 4.5 V, V S = ± 4.5 V igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current a I IN V AX = V = 2 V or.8 V Full -1-1 μa ynamic Characteristics Transition time e t TRANS V S1b = 3.5 V, V S4b = -3.5 V, (G949E) see fig. 2 Full V S1 = 3.5 V, V S8 = -3.5 V, (G948E) Room Break-before-make time e V t S(all) = V A = 3.5 V Room BBM see fig. 4 Full ns Enable turn-on time e Room t ON() VAX = V, V S1 = 3.5 V (G948E) Full V AX = V, V S1b = 3.5 V (G949E) Enable turn-off time e t see fig. 3 Room OFF() Full Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 2 V rain off capacitance e C (off) f = 1 MHz, V = V, V = 2 V rain on capacitance e C (on) f = 1 MHz, V = V, V = V Power Supplies Power supply current G948E Room G949E Room G948E Room G949E Room G948E Room G949E Room I+ Room V = VA = V or I- Room UNIT pf μa S Rev. A, 25-Jul-16 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 G948E, G949E SPECIFICATIONS (Single Supply 5 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 5 V, ± %, = V V A, V =.8 V or 2 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 5 V On-resistance R ON = 4.5 V, V or V S = 1 V or 3.5 V, I S = 5 ma Room Full R ON match between channels g R ON Room = 4.5 V, V = 1 V or 3.5 V, I S = 5 ma On-resistance flatness i R ON Room Flatness Switch off leakage current a I S(off) = 5.5 V I (off) V S = 1 V or 4 V, V = 4 V or 1 V na Channel on leakage current a = 5.5 V I (on) V = V S = 1 V or 4 V, sequence each switch on igital Control Logic high input voltage V INH Full = 5 V Logic low input voltage V INL Full V Input current a I IN V AX = V = 2 V or.8 V Full -1-1 μa ynamic Characteristics Transition time e t TRANS V S1 = 3.5 V, V S8 = V, (G948E) V S1b = 3.5 V, V S4b = V, (G949E) see fig. 2 Room Full Break-before-make time e V t S(all) = V A = 3.5 V Room OP see fig. 4 Full ns Enable turn-on time e Room t ON() VAX = V, V S1 = 3.5 V (G948E) Full V AX = V, V S1b = 3.5 V (G949E) Enable turn-off time e t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, R G =, V G = V Room pc Off isolation e, h OIRR Room R L = 1 k, f = khz Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = V G948E Room G949E Room rain off capacitance e C (off) f = 1 MHz, V = V, V = 2 V G948E Room G949E Room pf rain on capacitance e C (on) f = 1 MHz, V = V, V = V G948E Room G949E Room Power Supplies Power supply current I+ V = V A = V or Room μa UNIT S Rev. A, 25-Jul-16 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 G948E, G949E SPECIFICATIONS (Single Supply 3 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 3 V, ± %, = V V =.4 V or 1.8 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 3 V On-resistance R ON = 2.7 V, V =.5 V or 2.2 V, I S = 5 ma R ON match between channels g R ON = 2.7 V, V =.5 V or 2.2 V, I S = 5 ma On-resistance flatness i R ON Flatness Room Full Room Room I S(off) Switch off leakage current a = 3.3 V V S = 2 V or 1 V, V = 1 or 2 V I (off) na Channel on leakage current a = 3.3 V I (on) V = V S = 1 V or 2 V, sequence each switch on igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current a I IN V AX = V = 1.8 V or.4 V Full -1-1 μa ynamic Characteristics Transition time t TRANS V S1b = 1.5 V, V S4b = V, (G949E) see fig. 2 Full V S1 = 1.5 V, V S8 = V, (G948E) Room V Break-before-make time t S(all) = V A = 1.5 V Room BBM see fig. 4 Full ns Room Enable turn-on time t ON() VAX = V, V S1 = 1.5 V (G948E) Full V AX = V, V S1b =1.5 V (G949E) Enable turn-off time t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, R G =, V G = V Room pc Off isolation e, h OIRR Room f = khz, R L = 1 k Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 1.8 V rain off capacitance e C (off) f = 1 MHz, V = V, V = 1.8 V rain on capacitance e C (on) f = 1 MHz, V = V, V = V Power Supplies G948E Room G949E Room G948E Room G949E Room G948E Room G949E Room Power supply current I+ V = V A = V or Room μa Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for ESIGN AI ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. R ON = R ON max. - R ON min. h. Worst case isolation occurs on channel 4 due to proximity to the drain pin. i. R ON flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal. UNIT pf S Rev. A, 25-Jul-16 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) R ON - On-Reistance (Ω) = +3 V, I S = 5 ma T A = 25 C = +5 V, I S = 5 ma = +12 V, I S = 5 ma = +16 V, I S = 5 ma R ON - On-Reistance (Ω) C C C 6 4 = +3 V 2 I S = 5 ma V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage R ON - On-Reistance (Ω) C +25 C -4 C = +12 V I S = 5 ma V - Analog Voltage (V) R ON - On-Reistance (Ω) V± = ± 5 V V± = ± 8 V V - Analog Voltage (V) T A = 25 C I S = 5 ma On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage R ON - On-Reistance (Ω) = +5 V I S = 5 ma +85 C +25 C -4 C R ON - On-Reistance (Ω) C +25 C C 1. V± = ± 5 V.5 I S = 5 ma V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage S Rev. A, 25-Jul-16 7 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

8 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 I S(OFF) I (OFF) Leakage Current (pa) I (ON) V± = ± 5 V I+ - Supply Current (pa) V± = 12 V / V V = V A = V V± = ± 5 V V = V A = V V - Analog Voltage (V) Leakage Current vs. Analog Voltage Temperature ( C) Supply Current vs. Temperature Leakage Current (pa) IS(OFF) I (ON) I (OFF) V± = +12 V / V V - Analog Voltage (V) Leakage Current vs. Analog Voltage Loss, OIRR, X TALK (db) - Loss OIRR -5 X TALK -6-7 G948E -8 V± = 12 V / V -9 - K 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency Leakage Current (pa) 2 V± = ± 5 V 18 I (ON),V = 4.5 V 16 I (OFF),V = 4.5 V, V S = -4.5 V 14 I (ON),V = -4.5 V 12 I (OFF),V = 1 V, V S = 4.5 V 8 I S(OFF),V = -4.5 V, V S = 4.5 V 6 4 I S(OFF),V = 4.5 V, V S = -4.5 V Temperature ( C) Leakage Current vs. Temperature Loss, OIRR, X TALK (db) - Loss OIRR -5 X TALK -6-7 G949E -8 V± = 12 V / V -9 - K 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency S Rev. A, 25-Jul-16 8 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

9 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) V± = ± 5 V I+ - Supply Current (μa) V T - Switching Threshold (V) V IH = 25 C V IH =-4 C V IL = 25 C V IL = 85 C.1 K K 1M M Input Switching Frequency (Hz) Supply Voltage (V) Supply Current vs. Input Switching Frequency Switching Threshold vs. Supply Voltage t ON(), t OFF() - Switching Time (ns) = 3 V, t ON = 5 V, t ON = 3 V, t OFF = 5 V, t OFF = 12 V, t ON Q INJ - Charge Injection (pc) = 12 V G948E G949E = 12 V, t OFF Temperature ( C) V S - Analog Voltage (V) Switching Time vs. Temperature Charge Injection vs. Analog Voltage = 3 V, t TRANS G948E t TRANS, - Transition Time (ns) = 5 V, t TRANS- = 5 V, t TRANS+ = 3 V, t TRANS+ = 12 V, t TRANS+ Capacitance (pf) C (ON) C (OFF) 25 = 12 V, t TRANS Temperature ( C) 2 C S(OFF) V ANALOG (V) Transition Time vs. Temperature Capacitance vs. Analog Voltage S Rev. A, 25-Jul-16 9 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

10 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 12 G949E C (ON) Capacitance (pf) C (OFF) 2 C S(OFF) V ANALOG (V) SCHEMATIC IAGRAM (Typical Channel) Capacitance vs. Analog Voltage A A X Level Shift ecode/ rive S 1 GN S n Fig. 1 - S Rev. A, 25-Jul-16 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

11 G948E, G949E TEST CIRCUITS 5 Ω A S 1 S 2 - S 7 G948E S 8 V S1 V S8 Logic Input V AX 3 V V 5 % t r < 5 ns t f < 5 ns GN 3 Ω 35 pf Switch Output V S1 5 % 9 % V S8 9 % 5 Ω S 1b A S 1a - S 4a, a S G949E 4b b GN 3 Ω V S1b V S4b 35 pf t TRANS S 1 ON Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V S 8 ON (G948) or S 4 ON (G949) t TRANS Fig. 2 - Transition Time S 1 V S1 5 S 2 - S A 8 G948E GN 3 35 pf Logic Input 3 V V t OFF() 5 % t r < 5 ns t f < 5 ns t ON() Switch Output 9 % S 1b V S1 V 9 % 5 A S 1a - S 4a, a S 2b - S 4b G949E b GN 3 35 pf Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V Fig. 3 - Enable Switching Time S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

12 G948E, G949E TEST CIRCUITS 5 A G948E G949E All S and a GN b, 3 V S1 35 pf Logic Input Switch Output 3 V V V S V 5 % 9 % t OP t r < 5 ns t f < 5 ns Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V Fig. 4 - Break-Before-Make Interval V g R g Channel Select S X A GN C L 1 nf Logic Input Switch Output 3 V V OFF ON OFF Δ is the measured voltage due to charge transfer error Q, when the channel turns off. Q = C L x Δ Δ Fig. 5 - Charge Injection V IN S X R g = 5 Ω S 8 A UT GN R L 5 Ω Off Isolation = 2 log UT V IN Fig. 6 - Off Isolation S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

13 G948E, G949E TEST CIRCUITS S 1 V S IN X R IN 5 Ω R g = 5 Ω S 8 A UT GN R L 5 Ω Crosstalk = 2 log UT V IN Fig. 7 - Crosstalk V IN S 1 R g = 5 Ω A GN R L 5 Ω UT Insertion Loss = 2 log Fig. 8 - Insertion Loss UT V IN Channel Select A1 A S 1 S 8 Meter HP4192A Impedance Analyzer or Equivalent GN f = 1 MHz Fig. 9 - Source rain Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

14 QFN 4x4-16L Case Outline Package Information (5) (4) VARIATION 1 VARIATION 2 IM MILLIMETERS (1) INCHES MILLIMETERS (1) INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A A A3.2 ref..8 ref..2 ref..8 ref. b BSC.157 BSC 4. BSC.157 BSC e.65 BSC.26 BSC.65 BSC.26 BSC E 4. BSC.157 BSC 4. BSC.157 BSC E K.2 min..8 min..2 min..8 min. L N (3) Nd (3) Ne (3) Notes (1) Use millimeters as the primary measurement. (2) imensioning and tolerances conform to ASME Y14.5M (3) N is the number of terminals. Nd and Ne is the number of terminals in each and E site respectively. (4) imensions b applies to plated terminal and is measured between.15 mm and.3 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max..5 mm. ECN: S Rev. B, 22-Apr-13 WG: 589 Revision: 22-Apr-13 1 ocument Number: For technical questions, contact: powerictechsupport@vishay.com ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

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