Quad SPST CMOS Analog Switches
|
|
- Sharon Randall
- 5 years ago
- Views:
Transcription
1 Quad PT MO Analog witches Low On-Resistance: Low Leakage: 8 pa Low Power onsumption:.2 mw Fast witching Action t ON : 1 ns Low harge Injection Q: 1 p G21A/G22 Upgrades TTL/MO-ompatible Logic ingle upply apability Less ignal Errors and istortion Reduced Power upply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors implifies Retrofit imple Interfacing Audio witching Battery Powered ystems ata Acquisition Hi-Rel ystems ample-and-hold ircuits ommunication ystems Automatic Test Equipment Medical Instruments The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function. The G442 has a normally open function. ombining low on-resistance (, typ.) with high speed (t ON 1 ns, typ.), the G441/442 are ideally suited for upgrading G21A/22 sockets. harge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the G441/442 are built on s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. Key 1 1 N N GN 6 7 L G441 Top View N N 4 ual-in-line and OI 13 G441 GN 12 N Top View N Logic G441 G442 1 ON ON Logic.8 V Logic V ocument Number: Rev. H, 11-Mar-2 1
2 Temp Range Package Part Number 4 to 8 to Pin Plastic IP 16-Pin Narrow OI 16-Pin erip L-2 G441J G442J G441Y G442Y G441AK G441AK/ MEA G442AK G442AK/ MEA M2A M2A to V GN to V igital Inputs a V, V () 2 V to () +2 V or 3 ma, whichever occurs first ontinuous urrent (Any Terminal) ma urrent, or (Pulsed 1 ms, 1% duty cycle) ma torage Temperature (AK uffix) to 1 (J, Y uffix) to 12 Power issipation (Package)b 16-Pin Plastic IP c mw 16-Pin erip d mw 16-Pin Narrow Body OI d mw L-2 d mw Notes: a. ignals on X, X, or X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P Board. c. erate 6 mw/ above 7 d. erate 12 mw/ above 2 V Reg X Level hift/ rive GN FIGURE 1. 2 ocument Number: Rev. H, 11-Mar-2
3 Test onditions Unless Otherwise pecified A uffix to 12 uffix 4 to 8 Parameter ymbol = 1 V, = 1 V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog witch Analog ignal Range e V ANALOG V rain-ource On-Resistance r (on) I = 1 ma, V = 8. V = 13. V, = 13. V On-Resistance Match Between hannels e r = 1 ma, V = 1 V (on) = 1 V, = 1 I V witch Off Leakage urrent I (off) I (off) = 16., = 16. V V = 1. V, V = 1. V na hannel On Leakage urrent I (on) = 16. V, = 16. V V = V = 1. V igital ontrol Input urrent V Low I IL V under test =.8 V, All Other = 2.4 V.1 Input urrent V High I IH V under test = 2.4 V, All Other =.8 V.1 na ynamic haracteristics Turn-On Time t ON R G441 L = 1 k, L = 3 pf ns V Turn-Off Time t = 1 V, ee Figure 2 G harge Injection e Off Isolation e rosstalke (hannel-to-hannel) Q OIRR X TALK L = 1 nf, V = V V gen = V, R gen = 6 R L =, L = pf f = 1 MHz 1 1 p ource Off apacitance e (off) 4 rain Off apacitance e (off) f = 1 MHz 4 pf hannel On apacitance e (on) V ANALOG = V 16 Power upplies Positive upply urrent I db Negative upply urrent I = 16. V, = 16. V V = or V A Ground urrent I GN ocument Number: Rev. H, 11-Mar-2 3
4 Test onditions Otherwise Unless pecified A uffix to 12 uffix 4 to 8 Parameter Analog witch ymbol = 12 V, = V, V = 2.4 V,.8 V f Temp b Typ c Min d Max d Min d Max d Unit Analog ignal Range e V ANALOG V rain-ource On-Resistance r (on) I = 1 ma, V = 3 V, 8 V = 1.8 V ynamic haracteristics Turn-On Time t ON RL R L = 1 k, L = 3 pf Turn-Off Time t V = 8 V, ee Figure harge Injection Q L = 1 nf V gen = 6 V, R gen = 2 p Power upplies Positive upply urrent I ns Negative upply urrent I = 13.2 V, = V V = or V Ground urrent I GN A Notes: a. Refer to PROE OPTION FLOWHART. b. = 2, = as determined by the operating temperature suffix. c. Typical values are for EIGN AI ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V = input voltage to perform proper function. 4 ocument Number: Rev. H, 11-Mar-2
5 r (on) vs. V and Power upply Voltage r (on) vs. V and Temperature 1 8 ) r(on) rain-ource On-Resistance ( V 8 V 1 V 12 V 1 V 2 V ) r(on) rain-ource On-Resistance ( = 1 V = 1 V V rain Voltage (V) V rain Voltage (V) r (on) vs. V and Unipolar Power upply Voltage r (on) vs. V and Temperature (ingle 12-V upply) 3 14 = V ) r(on) rain-ource On-Resistance ( = V 8 V 1 V 12 V 1 V 2 V ) r(on) rain-ource On-Resistance ( = 12 V = V V rain Voltage (V) V rain Voltage (V) 14 rosstalk and Off Isolation vs. Frequency harge Injection vs. ource Voltage 12 rosstalk 4 L = 1 nf 1 3 ( db) 8 6 Q (p) 2 1 = 1 V = 1 V Off Isolation 4 2 = 1 V = 1 V Ref. 1 dbm 1 2 = 12 V = V k 1 k 1 k 1 M 1 M 1 1 f Frequency (Hz) V ource Voltage (V) ocument Number: Rev. H, 11-Mar-2
6 2.4 witching Threshold vs. upply Voltage 2 ource/rain Leakage urrents I (off), I (off) (V) V.8 (pa) I, I 4 6 I (on) 8 = 1 V = 1 V For I (off), V = V , Positive and Negative upplies (V) V or V rain or ource Voltage (V) 1 ource/rain Leakage urrents (ingle 12-V upply) Operating Voltage I (off), I (off) 44 4 V MO ompatible (pa) I, I I (on) + I (on) = 12 V = V For I, V = For I, V = (V) ÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ TTL ompatible V ÇÇÇÇÇÇ =.8 V, 2.4 V ÇÇÇÇÇÇ MO ompatible 4 V or V rain or ource Voltage (V) Negative upply (V) 16 witching Time vs. Power upply Voltage witching Time vs. Power upply Voltage 14 t ON 4 = V 12 t ON t (ns) t t (ns) t upply Voltage (V) V ource Voltage (V) 6 ocument Number: Rev. H, 11-Mar-2
7 1 V 3 V GN R L1 k L 3 pf Logic Input witch Input 3 V V V % % t t r <2 ns t f <2 ns 8% 8% 1 V witch Output V t ON L (includes fixture and stray capacitance) Note: Logic input waveform is inverted for G442. FIGURE 2. witching Time V O R g 3 V GN 1 V L 1 nf FIGURE 3. harge Injection X (G441) X (G442) ON ON Q = x L V R g = V, 2.4 V N = 1 mf tantalum in parallel with.1 mf ceramic V R g = V, 2.4 V R L V, 2.4 V 2 R L GN GN 1 V 1 V X TALK Isolation = 2 log = RF bypass FIGURE 4. rosstalk V V Off Isolation = 2 log FIGURE. Off Isolation V, 2.4 V Meter HP4192A Impedance Analyzer or Equivalent GN 1 V FIGURE 6. ource/rain apacitances ocument Number: Rev. H, 11-Mar-2 7
8 +24 V R L G442 I = 3A 1 VN3L, M GN 1 k V + 1/4 G442 H + UT = Load Off 1 = Load On 1 V H = ample L = Hold FIGURE 7. Power MOFET river FIGURE 8. Open Loop ample-and-hold V + UT Gain error is determined only by the resistor tolerance. Op amp offset and MRR will limit accuracy of circuit. GA 1 A V = 1 R 1 9 k GA 2 A V = 1 GA 3 A V = 2 R 2 k R 3 4 k With W 4 losed UT V = R 1 + R 2 + R 3 + R 4 R 4 = 1 GA 4 A V = 1 G441 or G442 GN R 4 1 k 1 V FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier 8 ocument Number: Rev. H, 11-Mar-2
9 Notice Legal isclaimer Notice Vishay pecifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. ocument Number: 91 Revision: 8-Apr- 1
Quad SPST CMOS Analog Switches
Quad PT MO Analog witches ERIPTION The G441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally closed function.
More informationDG417/418/419. Precision CMOS Analog Switches. Features Benefits Applications. Description. Functional Block Diagram and Pin Configuration
G417/418/419 Precision MO Analog witches Features Benefits Applications 1-V Analog ignal Range On-Resistance r (on) : 2 Fast witching Action t ON : 1 ns Ultra Low Power Requirements P :3 nw TTL and MO
More informationQuad SPST CMOS Analog Switches
G441, G442 Quad PT MO Analog witches ERIPTION The G441, G442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally
More informationQuad SPST CMOS Analog Switches
G441, G442 Quad PT MO Analog witches ERIPTION The G441, G442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The G441 has a normally
More informationPrecision CMOS Analog Switches
Precision MO Analog witches G417, G418, G419 ERIPTION The G417, G418, G419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages,
More informationLow-Power, High-Speed CMOS Analog Switches
New Product G1B/3B/5B Low-Power, High-peed MO Analog witches FEATURE BENEFIT APPLIATION 44-V upply Max Rating 15-V Analog ignal Range On-Resistance r (on) : 23 Low Leakage I (on) : pa Fast witching t ON
More informationLow-Power, High-Speed CMOS Analog Switches
Low-Power, High-Speed MOS Analog es G41/43/4 ESRIPTION The G41/43/4 monolithic analog switches were designed to provide precision, high performance switching of analog signals. ombining low power (.3 µw,
More informationQuad SPST CMOS Analog Switches
G444, G44 Quad SPST MOS Analog Switches APPLIATIONS Audio switching Battery powered systems ata acquisition Sample-and-hold circuits Telecommunication systems Automatic test equipment Single supply circuits
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationImproved, Dual, High-Speed Analog Switches
-477; Rev ; 6/ Improved, ual, High-peed Analog witches General escription Maxim's redesigned G4// analog switches now feature guaranteed low on-resistance matching between switches (Ω max) and guaranteed
More informationFEATURES APPLICATIONS
6 On-Resistance, +12 V, ± V, + V, +3 V, SPST and SPDT Switches DESRIPTION analog switches are designed to operate from +3 V to +16 V single supply or ± 3 V to ± 8 V dual supply and are fully specified
More informationDG411CY. Pin Configurations/Functional Diagrams/Truth Tables IN2 DG412 IN3 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT
9-728; Rev ; 9/0 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (Ω max) and guaranteed on-resistance flatness over the signal
More informationN-Channel 80-V (D-S) MOSFET
N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM
More information8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers Low On-Resistance r S(on) : Low Charge Injection Q: pc Fast Transition Time t TRANS : 6 ns Low Power I SUPPLY : A Single Supply Capability 44-V Supply
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationP-Channel 60-V (D-S) MOSFET
New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:
More informationIN1 IN2 DG412 GND IN3 IN4 DIP/SO/TSSOP DG412 LOGIC SWITCH OFF SWITCHES SHOWN FOR LOGIC 0 INPUT
9-4728; Rev 7; 9/08 Improved, Quad, General escription Maxim s redesigned analog switches now feature low on-resistance matching between switches (3Ω max) and guaranteed on-resistance flatness over the
More informationPowered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with
More informationPrecision Monolithic Low-Voltage CMOS Analog Switches
G47L, G48L, G49L Precision Monolithic Low-Voltage MOS Analog Switches ESRIPTION The G47L, G48L, G49L are low voltage pin-for-pin compatible companion devices to the industry standard G47, G48, G49 with
More informationPowered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation
More informationMonolithic N-Channel JFET Dual
New Product SST9NL/U9NL Monolithic N-Channel JFET Dual PRODUCT SUMMARY V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS - V GS Max (mv) -. to -. - - FEATURES BENEFITS APPLICATIONS Anti Latchup
More informationDG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS
G2707 High Speed, Low Voltage, 3, ifferential 4:1 CMOS Analog Multiplexer/Switch ESCRIPTION The G2707 is a high speed, low voltage, 3, differential 4:1 multiplexer. It operates from a 1.65 V to 4.3 V single
More informationMonolithic N-Channel JFET Dual
N98 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low
More informationImproved Quad CMOS Analog Switches
Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary
More informationPrecision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
Precision 8-Ch/ual 4-Ch Low Voltage Analog Multiplexers ESCRIPTION The G948, G949 uses BiCMOS wafer fabrication technology that allows the G948, G949 to operate on single and dual supplies. Single supply
More informationMatched N-Channel JFET Pairs
Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip
More information3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers
G948E, G949E 3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers ESCRIPTION The G948E, G949E uses BiCMOS wafer fabrication technology that allows the G948E, G949E
More informationPrecision, Quad, SPDT, CMOS Analog Switch
19-0189; Rev 1; 6/99 Precision, Quad, SPDT, MOS Analog Switch General Description The is a precision, quad, single-pole doublethrow (SPDT) analog switch. The four independent switches operate with bipolar
More informationPART TOP VIEW. Maxim Integrated Products 1
9-96; Rev ; 2/ 45, SPDT Analog Switch in SOT23-8 General Description The is a dual-supply, single-pole/doublethrow (SPDT) analog switch. On-resistance is 45 max and flat (7 max) over the specified signal
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationPrecision, Quad, SPST Analog Switches
9-8; Rev ; 9/ Precision, Quad, SPST Analog Switches General Description The are precision, quad, single-pole single-throw (SPST) analog switches. The MAX364 has four normally closed (N), and the MAX365
More information16, Low Parasitic Capacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches
16, Low Parasitic apacitance and Leakage, +12 V / +5 V / +3 V / ± 5 V Quad SPST Switches DESRIPTION The DG411LE, DG412LE, and DG413LE are monolithic quad singlepolesinglethrow analog switches. The DG411LE
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More information1 pc Charge Injection, 100 pa Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches ADG611/ADG612/ADG613
a FEATURE 1 pc Charge Injection 2.7 V to 5.5 V ual upply +2.7 V to +5.5 V ingle upply Automotive Temperature Range 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 On-Resistance Rail-to-Rail witching
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationPS391/PS392/PS393. Precision, Quad, SPST, Analog Switches. Description
PS39/PS39/PS393 379379379379379379379379379379379379379 Precision, Quad, SPST, Analog Switches Features Low On-Resistance, ohms typ) Minimizes Disttion and Err oltages On-Resistance Match Between hannels,
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationP-Channel 100 V (D-S) MOSFET
P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.
More informationFEATURES BENEFITS APPLICATIONS
0.37, Low Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known as a two-channel double-pole
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationMonolithic N-Channel JFET Dual
SST Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Typ (pa) V GS V GS Max (mv) to 6. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise
More informationBattery Disconnect Switch
New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted
More informationLow Capacitance, Low Charge Injection, ±15 V/+12 V icmos Quad SPST Switches ADG1212-EP
Enhanced Product Low Capacitance, Low Charge Injection, ±15 V/+12 V icmo Quad PT witches FEATURE 1 pf off capacitance 2.6 pf on capacitance
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationON OFF PART. Pin Configurations/Functional Diagrams/Truth Tables 5 V+ LOGIC
9-88; Rev ; /7 25Ω SPST Analog Switches in SOT23-6 General Description The are dual-supply single-pole/single-throw (SPST) switches. On-resistance is 25Ω max and flat (2Ω max) over the specified signal
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationComplementary MOSFET Half-Bridge (N- and P-Channel)
New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationHigh-Voltage Schottky Rectifier
High-Voltage Schottky Rectifier MBR(F,B)090 & MBR(F,B)0 TO-0AC TMBS ITO-0AC FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability
More informationCurrent Sensing MOSFET, N-Channel 30-V (D-S)
New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol
More informationN-Channel 8 V (D-S) MOSFET
N-Channel 8 V (-) MOFET i88b Vishay iliconix PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (TYP.) 8.8 mm xxx xx.54 at V G = 4.5 V 3.5.6 at V G =.5 V 3.3.68 at V G =.8 V 3..86 at V G =.5 V.3.35 at V G =. V
More informationN-Channel and P-Channel 20 V (D-S) MOSFET
N-Channel and (D-) MOFET DECRIPTION The attached PICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMO. The subcircuit model is extracted and optimized
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationTEMD5020. Silicon PIN Photodiode. Vishay Semiconductors
TEMD52 Silicon PIN Photodiode Description TEMD52 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 4.4 mm 2 sensitive area, detecting
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking
More informationPrecision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers
G6B, G7B Precision 6-Channel/ual 8-Channel CMOS nalog Multiplexers ESCRIPTION The G6B and G7B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance,
More informationP-Channel 30-V (D-S) MOSFET
Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs
More informationImproved, SPST/SPDT Analog Switches
9-0; Rev 2; 2/96 Improved, PT/PT nalog witches General escription Maxim s redesigned G7/G/G9 precision, CMO, monolithic analog switches now feature guaranteed on-resistance matching (3Ω max) between switches
More informationMatched N-Channel JFET Pairs
Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip
More informationMonolithic N-Channel JFET Dual
N98 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low
More informationDual N-/Dual P-Channel 30-V (D-S) MOSFETs
Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationN-Channel 60 V (D-S) MOSFET
Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:
More informationPrecision, Quad, SPST Analog Switches
9-022; Rev ; 4/94 Precision, Quad, SPST nalog Switches General escription The are precision, quad, single-pole single-throw (SPST) analog switches. The MX35 has four normally closed (N), and the MX352
More informationN-Channel 20-, 30-, 40-V (D-S) MOSFETs
TNL/4L, VNL/LS N-Channel -, -, 4-V (D-S) MOSFETs Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) TNL. @ V GS = V.5 to.64 TN4L 4. @ V GS = V.5 to.64 VNL. @ V GS = V.8 to.5.64 VNLS. @
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationDG3157. High-Speed, Low R ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) DESCRIPTION FEATURES
High-peed, Low R ON, PDT nalog witch (2:1 Multiplexer/Demultiplexer Bus witch) DG3157 DECRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More information8-Channel, Dual 4-Channel, Triple 2-Channel Multiplexers
8-hannel, Dual 4-hannel, Triple 2-hannel Multiplexers DESRIPTION The DG92, DG922, and DG923 are high precision single and dual supply MOS analog multiplexers. DG92 is an 8-channel multiplexer, the DG922
More informationLC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409
a FEATURES 44 upply Maximum Ratings to Analog Signal Range Low On Resistance ( max) Low Power (I SUPPLY < 75 A) Fast Switching Break-Before-Make Switching Action Plug-in Replacement for G408/G409 APPLICATIONS
More informationLow Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A
a FEATURE Bandwidth >4 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness.3 Typical ingle 3 V/5 upply Operation Very Low istortion:
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More information