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1 Nizami Z. Vagidov, Ph. D. Office: Home: CURRICULUM VITAE 312D Bonner Hall, Department of EE, University at Buffalo, The State University of New York, Buffalo, NY Tel.: (716) Fax: (716) Palmdale Dr., Williamsville, NY Tel.: (716) RESEARCH INTERESTS: Microelectronic devices and materials; Terahertz generators: theory, simulation, and applications; Transport in heterostructures, thin films, quantum wells, and quantum wires; Nanoelectronics and nanoengineering; Theory and computational methods of device simulation; Monte Carlo methods of simulation; Resonance-tunneling diodes; Simulation of thyristors and devices based on quantum wells, quantum wires, and quantum dots. EDUCATION: Ph.D., Electrical Engineering Dissertation: "Computer simulation of nonconventional nanoscale semiconductor devices" Ph.D., Solid-State Physics (Candidate of Sciences in Physics and Mathematics) Dissertation: "Parallel transport of hot electrons in heterostructures with their real space transfer" M.S., Solid-State Physics Thesis: "Induced radiation processes in periodic electric and magnetic fields" Anthony Wayne Drive, Department of ECE, Wayne State University, Detroit, MI Department of Theoretical Physics, Lashkaryov Institute of Semiconductor Physics, 45 Prospect Nauki, Kiev 03028, Ukraine Department of Physics, Daghestan State University, Daghestan, Makhachkala , Russia B.S., Physics 1974 Department of Physics, Daghestan State University, Daghestan, Makhachkala , Russia EMPLOYMENT: University at Buffalo, The State University of New York, Department of Electrical Engineering, Buffalo, NY present Assistant Professor Research Responsibilities include research in theory and computer simulations of 1

2 Wayne State University, Department of Electrical and Computer Engineering, Detroit, MI Lashkaryov s Institute of Semiconductor Physics of Ukrainian Academy of Sciences, Laboratory of Semiconductors and Semiconductor Devices, Kiev 03028, Ukraine Daghestan Scientific Center of Russian Academy of Sciences, Institute of Physics, Laboratory of Semiconductor Physics, Daghestan, Makhachkala , Russia nanoscale semiconductor devices. Supervised work of four graduate and three undergraduate students Research Associate Conducted research on electron-phonon interaction in semiconductors and semiconductor structures, developed theory and carried out numerical simulations of novel terahertz generators Research Scientist Conducted theoretical and numerical studies of ballistic quasineutral semiconductor plasma with negativeeffective-mass carriers. Investigated ballistic transport in semiconductor waveguides and resonant-tunneling double-barrier structures. Studied and simulated real-space transfer of twodimensional electrons in semiconductor heterostructures. Supervised work of one graduate student Junior Research Scientist Conducted theoretical research of ambipolar drift instabilities in multilayered semiconductor structures, conducted experimental and theoretical research of transport in group IV semiconductors (Si and Ge) under ultrahigh temperature gradient. Novokuli High School, Daghestan, Russia Teacher of Physics and Astronomy GRANTS AND AWARDS: Thomas C. Rumble Fellowship established for outstanding doctorate candidates $ 30,000 Wayne State University, Detroit, MI Summer 2001 Dissertation Fellowship 2001 $ 5,000 Wayne State University, Detroit, MI Lashkaryov Award Patent of a new type of current rectifier "Semiconductor rectifier" (co-inventors X. I. Amirkhanov, R. I. Bashirov, and R. R. Bashirov) 2 First prize First prize 1982 Patent SU Department of Theoretical Physics, Lashkaryov Institute of Semiconductor Physics, 45 Prospect Nauki, Kiev 03028, Ukraine Daghestan Scientific Center of Russian Academy of Sciences, Institute of Physics, Daghestan, Makhachkala , Russia

3 PROFESSIONAL SOCIETIES: Member of the IEEE Society since 2009 Membership Number: Member of the Sigma Xi Scientific Society since 2004 Membership Number: Member of the American Physical Society since 2001 Membership Number: ACADEMIC AND ADMINISTRATIVE SERVICES: Referee of: Journal of Applied Physics; Journal of Physics: Condensed Matter; Optics Communications; Solid-State Electronics; Superlattices and Microstructures; Ukrainian Journal of Physics. Referee of: Singapore Agency for Science, Technology, and Research. Grant Agency of Academy of Sciences of the Czech Republic Editor of: Textbook: "Introduction to Nanoelectronics: Science, Nanotechnology, Engineering, and Applications", V.Mitin, V. Kochelap, and M. Stroscio, Cambridge University Press, 329 p. (2008); Textbook: "Quantum Heterostructures: Microelectronics and Optoelectronics", V.Mitin, V. Kochelap, and M. Stroscio, Cambridge University Press, 634 p. (1999); Monograph: "Simulation of Transport Phenomena in Semiconductors. Method Monte Carlo", V. M. Ivastchenko and V. Mitin. Naukova Dumka, Kiev, 192 p. (1990). Visits: Visiting Assistant Professor University of Aizu-Wakamatsu, Japan, August 2006 March PRESENTATIONS AT INTERNATIONAL CONFERENCES Participated in more than 40 International Conferences. PROFESSIONAL PUBLICATIONS: More than 100 technical publications; 53 of them are refereed publications. Papers were published in refereed journals, including Physical Review B, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, Superlattices and Microstructures, and JETP Letters. Results of Ph.D. Dissertation: "Computer simulation of nonconventional nanoscale semiconductor devices" can be found in the following papers: Negative Effective Mass Terahertz Range Oscillators on a Cleaved Edge of a Superlattice, Journal of Computational Electronics, v. 2, No. 1, pp. 5-20, 2003 (with Z. S. Gribnikov and V. V. Mitin). Two Mechanisms of the Negative-Effective-Mass Instability in p-type Quantum Well-Based Ballistic p + pp + -Diodes: Simulations with a Load, Applied Physics Letters, v. 77, No. 23, pp (2000) (with R. R. Bashirov, Z. S. Gribnikov, and V. V. Mitin). 3

4 Two-Stream Instability and Oscillatory Regimes Induced in Ballistic Diodes and Field-Effect Transistors, Journal of Applied Physics, v. 88, No. 11, pp , 2000 (with Z. S. Gribnikov and V. V. Mitin). Negative-Effective-Mass Ballistic Field-Effect Transistor: Theory and Modeling, Journal of Applied Physics, v. 87, No.10, pp (2000) (with Z. Gribnikov, A. Korshak, and V. Mitin). Gated Negative-Effective-Mass Ballistic Terahertz Generators, Applied Physics Letters, v. 75, No.15, pp (1999) (with A. N. Korshak, Z. S. Gribnikov, and V. V. Mitin). Results of Monte Carlo simulation of real-space transfer phenomena were published in the following papers: Transport of Two-Dimensional Electrons in the Self-Consistent Quantum Well, Ukrainian Journal of Physics., v. 37, No. 5, pp (1992) (with V. M. Ivashchenko). Modeling of Electron Transport in Real Space in GaAs/Al x Ga 1-x As Heterostructures (with Low and High Values of x), Sov. Phys. Semiconductors, v. 24, No. 6, pp , 1990 (with Z. S. Gribnikov and V. M. Ivashchenko).. Drift Velocity of Hot Electrons in Accumulation Layers with a Nonthermal Electron Energy Distribution, Sov. Phys. Semiconductors, v. 23, No. 2, pp (1989) (with Z. S. Gribnikov and V. M. Ivashchenko). List of Refereed Publications: 53. L-H. Chien, A. Sergeev, N. Vagidov, and V. Mitin, Hot-Electron transport in quantum-dot photodetectors, International Journal of High Speed Electronics and Systems, v. 18, pp , V. Mitin, A. Sergeev, L-H. Chien, and N. Vagidov, High Performance of IR Detectors due to Controllable Kinetics in Quantum-Dot Structures, Proceedings of SPIE, Nanophotonics and Macrophotonics for Space Environments II, v. 7095, pp K-1-9, V. Mitin, N. Vagidov, and X. Liu, Developing a Lab Course in Nanotechnology for Undergraduate Engineering Students, Proceedings of 2008 ASEE Conference & Exhibition, AC , pp N. Vagidov, A. Sergeev, and V. Mitin. Infrared Quantum-Dot Detectors with Diffusion-Limited Capture, International Journal of High Speed Electronics and Systems, v. 17, pp , V. Mitin, N. Vagidov, M. Luisier, and G. Klimeck. Energy Dispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires, J. Computational Electronics, v. 6, No. 1-3, pp , A. Satou, N. Vagidov, and V. Ryzhii. Resonant Terahertz Detectors Utilizing Plasma Oscillations in Heterostructures with Two-Dimensional Gated/Ungated Electron Channel and Schottky Drain/Source Conatact, IEICE Technical Report, ED , No. 12, pp , V. Mitin, N. Vagidov, and A. Sergeev. Infrared Detector Based on Modulation-Doped Quantum-Dot Structures, Phys. Stat. Sol. (c), v. 3, No. 11, pp , A. Rahman, G. Klimeck, M. Lundstrom, N. Vagidov, and T.B. Boykin. Atomistic Approach for Nano-Scale Devices at the Scaling Limit and Beyond - Valley Splitting in Si, Japanese Journal of Applied Physics, v. 44, No. 4B, pp , Z.S. Gribnikov, N.Z. Vagidov, and G.I. Haddad. Phenomenological Theory of Tunnel Emitter Transit Time Oscillators for the Terahertz Range, J. Appl. Phys., v. 95, No. 3, pp , N.Z. Vagidov, J. East, V.V. Mitin, and G.I. Haddad. THz Range Unipolar Ballistic Tunnel-Emission Transit Time Oscillators, Proceedings of the 14 th International Symposium on Space Terahertz Technology. Editors: C. Walker and J. Payne, pp , Z.S. Gribnikov, N.Z. Vagidov, and V.V. Mitin. Negative Effective Mass Terahertz Range Oscillators on a 4

5 Cleaved Edge of a Superlattice, Journal of Comp. Electronics, v. 2, No. 1, pp. 5-20, Z.S. Gribnikov, N.Z. Vagidov, V.V. Mitin, and G.I. Haddad. Theory of Unipolar Ballistic and Quasiballistic Transit-Time Oscillators for a Terahertz Range, Physica E, v. 19, pp , Z.S. Gribnikov, N.Z. Vagidov, V.V. Mitin, and G.I. Haddad. Ballistic and Quasiballistic Tunnel Transit Time Oscillators for the Terahertz Range: Linear Admittance, J. Appl. Phys., v. 93, No. 9, pp , Z.S. Gribnikov, N.Z. Vagidov, RR. Bashirov, V.V. Mitin, and G.I. Haddad. Quantum Real Space Transfer in a Heterostructure Overgrown on the Cleaved Edge of a Superlattice, J. Appl. Phys., v. 93, No. 1, pp , V.I. Pipa, N.Z. Vagidov, V.V. Mitin, and M. Stroscio. Electron Mobility Engineering in Semiconductor Heterostructures, Physica E, 2002, Vol. 13, pp N.Z. Vagidov. Computer Simulation of Nonconventional Nanoscale Semiconductor Devices, Ph.D. Thesis, United States Copyright Office, Registration Number: TX , May Z.S. Gribnikov, N.Z. Vagidov, H. Eisele, V. Mitin, and G.I. Haddad. Heterostructure Device on the Cleaved Edge of a Superlattice for Terahertz Power Generation, Proceedings of the 2001 International Semiconductor Device Research Symposium, pp , V. V. Mitin and N. Z. Vagidov. Instabilities and Fluctuations in Semiconductor Solid-State Plasma, Proceedings of the 16 th International Conference on Noise in Physical Systems and 1/f Fluctuations. Editor: Gijs Bosman, World Scientific, pp , V. I. Pipa, N. Z. Vagidov, V. V. Mitin, and M. Stroscio. Electron-Acoustic Phonon Interaction in Semiconductor Nanostructures: Role of Deformation Variation of Electron Effective Mass, Phys. Rev. B 64 (23), pp , R. R. Bashirov, Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin. Two Mechanisms of the Negative-Effective- Mass Instability in p-type Quantum Well-Based Ballistic p + pp + -Diodes: Simulations with a Load, Appl. Phys. Lett., v. 77, No. 23, pp , Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin. Two-Stream Instability and Oscillatory Regimes Induced in Ballistic Diodes and Field-Effect Transistors, J. Appl. Phys., v. 88, No. 11, pp , Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin. Two-Stream Ballistic Instability and Terahertz Oscillation Generation in n + nn + -Ballistic Diodes and Field-Effect Transistor: Simulations, Proceedings of the 11 th International Symposium on Space Terahertz Technology, pp , V. I. Pipa, N. Z. Vagidov, V. V. Mitin, and M. Stroscio. Energy Losses of 2D Electron Gas Due to Near- Surface Acoustic Phonon Scattering, Supperlatt. Microstruct., v. 27, No. 5-6, pp , Z. Gribnikov, N. Vagidov, A. Korshak, and V. Mitin. Ballistic Field-Effect Transistor with Negative-Effective- Mass Current Carriers in the Channel, Supperlatt. Microstruct, v. 27, No. 2-3, pp , Z. Gribnikov, N. Vagidov, A. Korshak, and V. Mitin. Negative-Effective-Mass Ballistic Field-Effect Transistor: Theory and Modeling, J. Appl. Phys., v. 87, No.10, pp , A. N. Korshak, Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin. Gated Negative-Effective-Mass Ballistic Terahertz Generators, Appl. Phys. Lett., v. 75, No.15, pp , V. I. Pipa, N. Z. Vagidov, V. V. Mitin, and M. Stroscio. Momentum Relaxation of 2D Electron Gas Due to Near Surface Acoustic Phonon Scattering, Physica B (Cond. Mat.), v. 270, No. 3-4, pp , Z. S. Gribnikov, N. Z. Vagidov, A. N. Korshak, and V. V. Mitin. Ballistic Negative-Effective-Mass Field-Effect Transistor: Simulations, Proceedings of the 1999 International Semiconductor Device Research Symposium, pp , A. N. Korshak, Z. S. Gribnikov, N. Z. Vagidov, S. I. Kozlovsky, and V. V. Mitin. Effect of p + -Contact Parameters on Subterahertz and Terahertz Ballistic Current Oscillations for Quantized Holes With Negative Effective Masses, Microelectronic Engineering, v , pp ,

6 24. Z. S.Gribnikov, A. N. Korshak, and N. Z. Vagidov. Quantum Tunnel Reflectors and Superlattices on Their Basis, Supperlatt. Microstruct., v. 23, No. 2, pp , Z. S. Gribnikov, A. N. Korshak, S. I. Kozlovsky, and N. Z. Vagidov. Ballistic Generators of Terahertz Current Oscillations with p-quantum Well Bases, Phys. Stat. Sol. (b), v. 204, No. 1, pp , A. N. Korshak, Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin. Generation of Terahertz Oscillations in p- Type Semiconductors, Proceedings of the 1997 International Semiconductor Device Research Symposium, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Oscillations of a Ballistic Hole Current through Uniaxially-Compressed Semiconductor Layers, Semiconductors, v. 31, No. 2, pp , N. Z. Vagidov. Parallel Transport of Hot Electrons in Heterostructures with Their Real Space Transfer, Thesis of Candidate of the Physics and Mathematical Sciences ( field solid-state physics). Institute of Semiconductor Physics of Ukrainian National Academy of Sciences, Kiev, Ukraine, Z. S. Gribnikov, A. N. Korshak, S.I. Kozlovsky, and N. Z. Vagidov. Ballistic Electron Directional Coupler on the Basis of a Double Quantum Well, Lithuanian Journal of Physics, v. 36, No. 6, pp , Z. S. Gribnikov, A. N. Korshak, N. Z. Vagidov, and Z. M. Alexeeva. Terahertz Oscillation of Quantized Hole Ballistic Current at Parallel Transport across Short Modulation-Doped Heterostructural Bases, Proceedings of the 23 rd Internat.Conference on the Physics of Semiconductors, Berlin, Editors M. Scheffler and R. Zimmermann, World Scientific, v. 4, pp , Z. S. Gribnikov, A. N. Korshak, and N. Z. Vagidov. Terahertz Ballistic Current Oscillations for Carriers with Negative Effective Mass, J. Appl. Phys., v. 80, No. 10, pp , Z. S. Gribnikov, A. N. Korshak, N. Z. Vagidov, and V. V. Mitin. Effect of Base Parameters on Gate-Controlled Squeeze of Current-Conducting Region in pnpn-structures, Solid-State. Electr., v. 39, No. 6, pp , A. N. Korshak, Z. S. Gribnikov, and N. Z. Vagidov. Subterahertz and Terahertz Oscillations of Ballistic Current in Uniaxially Compressed Narrow Bases, In book: Hot Carriers in Semiconductors, K. Hess and others (ed.). Plenum Press, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Ballistic Electron Current in System of Asymmetrical Double Quantum Wells and its Terahertz Oscillations, In book: Hot Carriers in Semiconductors. K. Hess and others (ed.). Plenum Press, pp , Z. S. Gribnikov, A. N. Korshak, and N. Z. Vagidov. Generation of Terahertz Current Oscillations by Ballistic Carriers with Negative Effective Mass, Lithuanian Journal of Physics, v. 35, No. 5-6, pp , Z. S. Gribnikov, A. N. Korshak, N. Z. Vagidov, and V. V. Mitin. Ballistic Generator of Terahertz Oscillations, Proceedings 1995 Internat. Semiconduct. Dev. Res. Symp., pp , Charlottesville, N. Z. Vagidov, Z. S. Gribnikov, A. N. Korshak, and V. V. Mitin. Intermediate State of a Controllable Four- Layer pnpn-structure, Semiconductors, v. 29, No.11, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Space Charge of Injected Ballistic Electrons with Negative Effective Masses in Terahertz Range, Semiconductors, v. 29, No. 11, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Space-Charge-Limited Ballistic Currents in Thin Doped Conducting Channels, Semiconductors, v. 29, No. 3, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Terahertz-Range Oscillations of the Ballistic Current of Electrons with a Negative Effective Mass, JETP Lett., v. 61, No. 1, pp , N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak. Ballistic Currents in Semiconductor Thin Layers, Semiconductors, v. 28, No. 11, pp , Z. S. Gribnikov and N. Z. Vagidov. Ballistic Conductivity of a Quantum Well with a Resonant Tunnel Reflector, Semiconductors, v. 26, No. 12, pp ,

7 5. Z. S. Gribnikov and N. Z. Vagidov. Ballistic Conductance of Different Versions of Tunnel Contacts between Quantum Wells, Lithuanian Journal of Physics, v. 32, No. 5, pp , N. Z. Vagidov and V. M. Ivashchenko. Transport of Two-Dimensional Electrons in the Self-Consistent Quantum Well, Ukr. Fiz. Zh., v. 37, No. 5, pp , N. Z. Vagidov, Z. S. Gribnikov, and V. M. Ivashchenko. Modeling of Electron Transport in Real Space in GaAs/Al x Ga 1-x As Heterostructures (with Low and High Values of x), Sov. Phys. Semicond., v. 24, No. 6, pp , N. Z. Vagidov, Z. S. Gribnikov, and V. M. Ivashchenko. Drift Velocity of Hot Electrons in Accumulation Layers with a Nonthermal Electron Energy Distribution, Sov. Phys. Semicond., v. 23, No. 2, pp , R. R. Bashirov and N. Z. Vagidov. Theory of the b-drift in the Case of Self-Heating, Sov. Phys. Semicond., v. 18, No. 3, p. 358, List of Publications in Conference Proceedings 47. Quantum-dot photodetectors: In search of optimal design for room-temperature operation, V. Mitin, L. Chien, N. Vagidov, and A. Sergeev,, 2009 Advanced Research Workshop Future Trends in Microelectronics: Unmapped Roads, June 14-19, 2009, Sardinia, Italy, p Monte-Carlo modeling of electron kinetics in room temperature quantum-dot photodetectors, V. Mitin, A. Sergeev, L-H. Chien, and N. Vagidov, 7-th International Conference on Large-Scale Scientific Computations, June 4-8, 2009, Sozopol, Bulgaria, pp Monte-Carlo modeling of photoelectron kinetics in quantum-dot photodetectors, V. Mitin, A. Sergeev, L-H. Chien, and N. Vagidov, 13-th International Workshop on Computational Electronics, May 27-29, 2009, Beijing, China, pp Numerical simulation of plasma waves in high-electron-mobility transistors using kinetic transport model, A. Satou, V. Ryzhiil, N. Vagidov, and V. Mitin, 13-th International Workshop on Computational Electronics, May 27-29, 2009, Beijing, China, pp "High Performance of Room-Temperature IR Detectors due to Controllable Kinetics in Quantum-Dot Structures," V. Mitin, A. Sergeev, L. Chen, and N. Vagidov, 13th Advanced Heterostructures and Nanostructures Workshop, December 7-12, 2008, Hawaii, program, p "High Performance of IR Detectors due to Controllable Kinetics in Quantum-Dot Structures," V. Mitin, A. Sergeev, L. Chen, and N. Vagidov, Proceedings of SPIE: Nanophotonics and Macrophotonics for Space Environment II, Vol 7095, pp K-1-9, SPIE Optics + Photonics 2008 Symposium, paper , August 10-14, 2008, San Diego, CA. 41. Developing a Lab Course in Nanotechnology for Undergraduate Engineering Students V. Mitin, N. Vagidov, X. Liu, ASEE Annual Conference, June 22-25, 2008, Pittsburgh, Pennsylvania, program, p "Quantum-Dot Photodetectors: High Sensitivity due to Controllable Kinetics", A. Sergeev, L. Chien, N. Vagidov, and V. Mitin, American Physical Society Meeting, March 10-14, 2008, New Orleans, LA, Program, p. R Controllable diffusion in quantum-dot structures: A path for room-temperature operating IR detectors, V. Mitin, L. Chien, A. Sergeev, and N. Vagidov, International Workshop on Frontiers in Electronics (WOFE-07), December 12-19, 2007,Cozumel, USA, book of abstracts. 38. Simulation of plasma effects in resonant terahertz detector with lateral Shottky junction, N. Vagidov, A. Satou, V. Ryzhii, and V. Mitin, 12 th International Workshop on Computational Electronics, October 8-10, 2007, University of Massachusetts, Amherst-USA, book of abstracts. 7

8 37. Modeling of resonant terahertz detectors with lateral Schottky junctions, A. Satou, V. Ryzhii, N. Vagidov, V. Mitin, 13-th International Symposium on Ultrafast Phenomena in Semiconductors (13- UFPS), Vilnius, Lithuania August 2007, book of abstracts. 36. "Nanodesign for THz and far-ir sensing," V. Mitin, N. Vagidov, and A. Sergeev, International Workshop Tera- and Nano-Devices: Physics and Modeling 2006, Aizu-Wakamatsu, Japan, October 16-19, 2006, p. 64 and special issue "Physics and Modeling of Tera- and Nano-Devices". 35. "Energy dispersion relations for holes in silicon quantum wells and quantum wires," V. Mitin, N. Vagidov, M. Luisier, and G. Klimeck, 11-th International Workshop on Computational Electronics, Wien, Austria, May 25-27, 2006, Book of abstracts, p "Infrared detector based on modulation-doped quantum-dot structures," V. Mitin, N. Vagidov, and A. Sergeev, 4-th International Conference on Semiconductor Quantum Dots, Chamonix, France, May 1-5, 2006, Book of abstract, p "Infrared photodetector based on modulation-doped quantum-dot structures", Nizami Vagidov, Andrei Sergeev, and Vladimir Mitin, APS March Meeting March 13-17, 2006, Baltimore, MD, USA, Bulletin of the American Physical Society, 2006, Vol. 51, p. Q1 118; 32. "Ultra-thin Si films a viable material for terahertz oscillators ", V. V. Mitin and N. Z. Vagidov, 2 nd Joint International Conference on New Phenomena in Mesoscopic Structures and Surfaces and Interfaces of Mesoscopic Devices (NPMS7/SIMD5), November 27 - December 2, 2005, Maui, Hawaii, USA; 31. "Nanoscale Device Simulation at the Scaling Limit and Beyond ", A. Rahman, G. Klimeck, N. Vagidov, T.B. Boykin, and M.S. Lundstrom, International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, Sept , "Theory of Unipolar Ballistic and Quasiballistic Transit Time Oscillators for a Terahertz Range", Z.S. Gribnikov, N.Z. Vagidov, V.V. Mitin, and G.I. Haddad, 4th International Symposium on Nanostructures and Mesoscopic Systems, Tempe, Arizona, USA, February 17-21, "Engineering of Dispersion Relation in Two-Dimensional Heterostructures on the Basis of Quantum Real Space Transfer", Z.S. Gribnikov, N.Z. Vagidov, V.V. Mitin, and G.I. Haddad, 4th International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara, Brazil, December 8-13, 2002, Book of Abstracts, PS-II "Quantum Engineered Electron Dispersion Relations in 2DEG on the Cleaved Edge of a superlattice", Z.S. Gribnikov, N.Z. Vagidov, R. Bashirov, V.V. Mitin, and G.I. Haddad, accepted for presentation at the 26th International Conference on the Physics of Semiconductors, Edinburgh UK, 29 July - 2 August "Generalized Kronig-Penny Model for 2D Electron Gas Confined in a Periodical Heterostructure," Z.S. Gribnikov, R.R. Bashirov, N.Z. Vagidov, and V.V. Mitin, the 26 th Workshop on Compound Semiconductor Devices and Integrated Circuits, Chernogolovka, Russia, May 21-25, "Novel Heterostructure Device for THz Power Generation," Z.S. Gribnikov, N.Z. Vagidov, H. Eisele, V.V. Mitin, and G.I. Haddad, 13 th International Symposium on Space THz Technology, book of abstracts, Mh-10:10, Cambridge, MA, March 26-28, "Heterostructure Device on the Cleaved Edge of a Superlattice for Terahertz Power Generation," Z.S. Gribnikov, N.Z. Vagidov, H. Eisele, V. Mitin, and G.I. Haddad, Proceedings of the 2001 International Semiconductor Device Research Symposium, pp , Washington, DC, December 5-7, "Instabilities and Fluctuations in Semiconductor Solid-State Plasma", V. V. Mitin and N. Z. Vagidov, Proceedings of the 16 th International Conference on Noise in Physical Systems and 1/f Fluctuations, Gainesville, Florida, October, 2001, Editor Gijs Bosman, World Scientific, pp , "Two-Stream Ballistic Instability in Two-Channel Field-Effect Transistor", Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin, Proceedings of the 24 th Workshop on Compound Semiconductor Devices and Integrated Circuits, May 29 - June 02, 2000, Aegean Sea, Greece. 8

9 22. "Two-Stream Ballistic Instability and Terahertz Oscillation Generation in n + nn + -Ballistic Diodes and Field- Effect Transistor: Simulations", Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin, Proceedings of the 11 th International Symposium on Space Terahertz Technology, May 1-3, 2000, Ann-Arbor. 21. "Ballistic Negative-Effective-Mass Field-Effect Transistor: Simulations", Z. S. Gribnikov, N. Z. Vagidov, A. N. Korshak, and V. V. Mitin, Proceedings of the1999 International Semiconductor Device Research Symposium, December 1-3, 1999, Charlottesville, pp "Energy Losses of 2D Electron Gas Due to Near-Surface Acoustic Phonon Scattering", V. I. Pipa, N. Z. Vagidov, V. V. Mitin, and M. Stroscio, Surfaces and Interfaces of Mesoscopic Devices, Maui, Hawaii, December 5-10, 1999, p. P "Ballistic Negative-Effective-Mass Field-Effect Transistor: Simulations", Z. S. Gribnikov, N. Z. Vagidov, A. N. Korshak, and V. V. Mitin, Proceedings 1999 International Semiconductor Device Research Symposium, December 1-3, 1999, Charlottesville, pp "Ballistic Field-Effect Transistor with Negative-Effective-Mass Current Carriers in the Channel", V. V. Mitin, Z. S. Gribnikov, and N. Z. Vagidov, Invited Talk at the 3 rd NASA Workshop on Device Modeling, NASA Ames, Moffett Field, CA, August 26-27, "Relaxation Rates of 2D Electron Gas Due to Near-Surface Acoustic Phonon Scattering", N. Z. Vagidov, V. I. Pipa, and V. V. Mitin, 9 th International Conference on Phonon Scattering in Condensed Matter, July 1998, Lancaster, England, Book of Abstracts, pp. EP "Generation of Terahertz Oscillation in p-type Semiconductors", A. N. Korshak, Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin, Proceedings of the International Semiconductor Device Research Symposium, Charlottesville, VA, December 11-13, 1997, pp "Ballistic Generators of Terahertz Current Oscillations with p-quantum Well Bases", A. N. Korshak, Z. S. Gribnikov, N. Z. Vagidov, S. I. Kozlovsky, and V. V. Mitin, International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Berlin, Germany, 28 July - 1 August, 1997, p. MoP "Cathode Shape Influence on Subterahertz Oscillations on Ballistic Quantized Hole Current", A. Korshak, Z. Gribnikov, N. Vagidov, S. Kozlovsky, and V. Mitin, Fifth International Workshop on Computational Electronics, Notre Dame, Indiana, May 28-30, 1997, p. P "Ballistic Directional Coupler on the DQW-Basis," A. Korshak, Z. Gribnikov, N. Vagidov, S. Kozlovsky, and V. Mitin. Fifth International Workshop on Computational Electronics, Notre Dame, Indiana, May 28-30, 1997, p. FrP "Effect of p + -Contacts Parameters on Subterahertz Ballistic Current Oscillations for Quantized Holes with Negative Effective Mass," A. Korshak, Z. Gribnikov, N. Vagidov, S. Kozlovsky, and V. Mitin, Presented at the Second International Conference on Low Dimensional Structures and Devices, Lisbon, Portugal, May "Ballistic Generator of Terahertz Oscillations", V. Mitin, Z. S. Gribnikov, A. N. Korshak, and N. Z. Vagidov, Presented at NATO Advanced Study Institute on New Directions in Terahertz Technology, Chateau de Bonas (Toulouse), France, July 1-11, "Terahertz Oscillation of Quantized Hole Ballistic Current at Parallel Transport across Short Modulation-Doped Heterostructural Bases", Z. S. Gribnikov, A. N. Korshak, N. Z. Vagidov, and Z. M. Alexeeva, 23 rd Internat.Conference on the Physics of Semiconductors, Berlin, "Ballistic Generator of Terahertz Oscillations", Z. S. Gribnikov, A. N. Korshak, N. Z. Vagidov, and V. Mitin. Invited Talk International Semiconductor Device Research Symposium, Charlottesville, VA, December 6-8, "Ballistic Electron Current in System of Asymmetrical Double Quantum Wells and Its Terahertz Oscillations", N. Z. Vagidov, Z. S. Gribnikov, A. N. Korshak, and V. Mitin. IX International Conference on Hot Carriers in Semiconductors, Chicago, Illinois, USA, July 31 August 4, 1995, WeA5. 9

10 7. "Ballistic Conductance of Different Versions of Tunnel Contacts between Quantum Wells", Z. S. Gribnikov and N. Z. Vagidov, Proceedings of the 8 th Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, pp , "Ballistic Conductance of Double Tunnel-Coupled Quantum Wells", N. Z. Vagidov and Z. S. Gribnikov, 15 th Pekar Meeting on Theory of Semiconductors, Lviv, Ukraine, September, 1992, Book of Abstracts, p "Transport of Two-Dimensional Electrons in Self-Consistent Quantum Well", N. Z. Vagidov and V. M. Ivastchenko, XII All-Union Conference on Physics of Semiconductors, Kiev, USSR, October 1990, Book of Abstracts, p "Electron Transport in Single GaAs/AlGaAs Quantum Well", V. M. Ivastchenko and N. Z. Vagidov, Fifth Symposium on Surface Physics, Chivm Castle, Czechoslovakia, 8-12 October "Transitions of Two-Dimensional Hot Electrons between Quantum and Continuous Spectra in Self-Consistent Potential, N. Z. Vagidov and V. M. Ivastchenko, IV All-Union Meeting on Mathematical Modeling of Physical Processes in Semiconductors and Semiconductor Devices, Yaroslavl, USSR, December "Heating of Electrons in Accumulation Layers of Heterostructure with Their Transfer in Real Space, N. Z. Vagidov, Z. S. Gribnikov, and V. M. Ivastchenko, XI All-Union Conference on Physics of Semiconductors, Kishinev, USSR, 3-5 October 1988, Book of Abstracts, Volume 2, p "Drift Velocity of Hot Electrons in Accumulation Layers of Heterojunctions and Their Emission to Depletion Layers, N. Z. Vagidov, Z. S. Gribnikov, and V. M. Ivastchenko, II All-Union Meeting on Mathematical Modeling of Physical Processes in Semiconductors and Semiconductor Devices, Yaroslavl, USSR, September 1988, Book of Abstracts, p