Crosslight Software Overview, New Features & Updates. Dr. Peter Mensz
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1 1 Crosslight Software Overview, New Features & Updates Dr. Peter Mensz
2 2 Device Simulators Lastip/Pics3d Laser diode FEM models in 2D/3D Apsys 2D and 3D Any other compound semiconductors device FEM models, excluding stimulated emission. E.g. photodetectors, LEDs, HEMTs. APSYS Quantum-MOS 2D and 3D All APSYS features For small L ch ~ < 0.1μm MOSFET with ultra thin oxides ( can include selfconsistent Poisson and Schroedinger Eqs. Solver tunneling, Many Body corrections)
3 Optional Modules and Advanced Features: Quantum Tunneling Option Complex MQW Option Selfconsistent MQW Model VCSEL Option Vectorial Wave Function PML/EEIM Option and Radiative Mode Waveguide Modes of Passive Devices 3D Flow Option ;3D Optical+ 3D flow(elect.+therm.) Semiconductor Optical Amplifier Option Light Emitting Diode Option LED Ray Tracing Option FIBER-Grating/External Cavity Option Travel Wave Optical Amplifier ( for high speed SOA) Second Order Grating Option Beam Propagation Method Option Fiber/External-Cavity Optically Pumped Laser Option Many Body and Exciton Option 8x8 k.p Model Photon-Absorbing Waveguide Option (3D-Simulation for SOA, EAM, WPD) 3
4 Semiconductor Physical Process 4 Simulators PROCOM- 3D Chemical and Fluid Dynamic MOCVD Process Simulator Chemical species distributions in reactor. Gas flow pattern. Temperature distribution. Film deposition rates and composition. Common impurity incorporation. CSUPREM- 3D Semiconductor Processing Simulator physical models for ion implantation, deposition, etching, diffusion, and oxidation. Export doping profiles needed in device simulations. Based on technology licensed from Stanford University (Prof. Robert Dutton s group).
5 Quantum Drift-Diffusion Model In Crosslight Device Simulators 5
6 Introduction:Device evolution Optoelectronic devices: Laser diode: from double heterostructure laser to quantum well laser. LED: from bulk to multiple quantum wells. Silicon IC: CMOS gate length from several microns down to deep submicrons. Semiconductor from pure Si to strained Si on SiGe. Generalized quantum effect: Size effect: quantum confinement; QUNTUM WELLS, QUANTUM DOTS, QUANTUM WIRES Quantum tunneling (intraband and interband). Band structure engineering: strain dependent valley splitting, density of state design, mobility enhancement and optical transition selection. 6
7 Integrated Quantum-Drift-Diffusion Diffusion Model 7 Poisson Equation Electron/Hole Drift-Diffusion Model (Energy transport) Potential profile Space charge Injection current Tunneling current correction Wave Mechanics (Quantization/ Tunneling/ Multi-band k.p Theory)
8 Quantum tunneling correction 8 J TE bar J DD JTE Thermionic emission J DD J DD J TE bar J DD Enhanced by tunneling Factor from quantum Model. Drift-diffusion
9 Demonstration: RTD simulation 9
10 Quantum/classical regions in a MOSFET 10 May also be poly-gate
11 11 Quantum-DD model works!
12 12 Material Properties As Commands Ease of management: Input commands and material parameters completely define a simulation. Material parameters are isolated from numerical calculation. Flexible: Nearly any kind of parameter dependence (temperature, doping, composition) may be implemented or modified by user. Fortran/C syntax and logical control. Numerical tables may also be included in macro.
13 Types of material macros Basic bulk material macro. Strained/unstrained symmetric zincblende quantum well. Strained wurtzite symmetric quantum well. OLED Complex quantum wells (coupled, non-symmetric, type-ii, etc.) Complex MOS quantum well. General complex strained QW (strained silicon QW). 13
14 14 Strained Silicon Complete first principle band Structure model too difficult To be included in 3D drift- Diffusion solver. Use Composition parameterization Instead. Macro needs for all composition range: Strained bandgap for different valleys. DOS masses for each valley, for both perpendicular and parallel directions. Bandgap discontinuity Strained Si on SiGe (Richard et. Al. J. Appl. Phys. Vol. 94,1795 )
15 15 Parameterization of Strained Silicon Band Structure Δ 2 Δ 4 Δ 4 Δ 2 Implemented in Crosslight material macro library Strained Si(1-x)Ge(x) on relaxed Si(1-y)Ge(y) (Rieger&Vogl, Phys. Rev B48, )
16 Strained Si on Relaxed SiGe 16 Lower valley: smaller parallel mass but larger perpendicular mass. Higher valley: larger parallel mass but smaller perpendicular mass.
17 Complex LD/VCSEL Simulation and Advanced Quantum Well Models. Copyright Crosslight Software Inc. 17
18 18 Contents Multiple section tunable DFB/DBR laser. Fiber/external-cavity lasers Multiple lateral/longitudinal mode simulation. Lateral mode competition in VCSEL. Different k.p theories.
19 19 3-section DBR laser Physical model required: Current injection (driftdiffusion model) for all segments. MQW gain model in segment 1. Index change model in segment 2 & 3. DBR grating model in segment 3 (coupled mode theory). Lateral optical mode solver for all segments. Longitudinal mode model (Green s function theory) for all segments.
20 20 Round trip gain (RTG) RTG left RTG right
21 Longitudinal mode distribution 21 Modeling/Design Issues: Segments 2 & 3 should be close to but below bandgap to avoid optical loss but also to provide change of index. Both waveguide and DBR grating should vary with injection current.
22 Tuning behavior 22 Conclusion Possible to integrate many modules to describe complex laser behavior in 3D spatial and spectral dimensions.
23 Example of fibre grating DBR laser 23 Laser Diode
24 Traveling Waves: 24 Air gap SOA Fiber grating
25 25 Multiple section tunable DFB/DBR laser. Multiple lateral/longitudinal mode simulation. Lateral mode competition in VCSEL. Different k.p theories. Copyright Crosslight Software Inc.
26 Broad-area area laser with adjustable stripe 26 Adjustable twin-stripe for lateral mode control GRIN-SQW Symmetric axis
27 Pumping of different modes 27 Injection current magnitude (current spreading) Lateral mode No. 1 Lateral mode No. 2
28 Multi-mode considerations 28 Different longitudinal modes For lateral mode No. 1 Different lateral modes For longitudinal No. 1 Must solve a whole different set of longitudinal modes using modal indices of different lateral modes. Each longitudinal mode is always associated with a particular lateral mode. Must consider longitudinal and lateral spatial hole burning effects for different lateral/longitudinal modes.
29 Multi-lateral lateral mode spectrum 29 Different peaks for different lateral modes. May be used to monitor suppression of lateral modes.
30 30 Multiple section tunable DFB/DBR laser. Multiple lateral/longitudinal mode simulation. Lateral mode competition in VCSEL. Different k.p theories. Copyright Crosslight Software Inc.
31 Reflection symmetry axis Symmetric v. asymmetric VCSEL Top contact Top DBR 31 MQW layers Bottom DBR Bottom contact Models required: Full 3D drift-diffusion model: cylindrical symmetry no longer available. Lateral mode model with both phi and theta dependence. MQW gain model as usual. Transfer matrix model for longitudinal modes as usual.
32 Asymmetric VCSEL injection 32 Current magnitude Contact QW s Fundamental mode QW s 2 nd order mode QW s
33 Mode competition behavor 33 Asymmetric VCSEL Total 2 nd order Symmetric VCSEL Fundamental Total 2 nd order Conclusions a) VCSEL has similar lateral mode competition behavior as edge laser; b) Asymmetric VCSEL mode is necessary to simulate multi-lateral mode behavior. Fundamental
34 34 Multiple section tunable DFB/DBR laser. Multiple lateral/longitudinal mode simulation. Lateral mode competition in VCSEL. Different k.p theories. Copyright Crosslight Software Inc.
35 k.p theories for zinc-blende 35 Subbands from 8x8 k.p theory For GaAs/AlGaAs Motivations: When conventional parabolic gain model does not fit experiment, we need to try something else. Need to determine whether it is worth the trouble to go to higher order k.p theories.
36 Comparison for GaAs/AlGaAs QW 36 QW=GaAs/Al(0.33)Ga(0.67)As (t=76a)
37 Light v. current 37 QW=GaAs/Al(0.33)Ga(0.67)As (t=76a)
38 Comparison for InGaAsP QW 38 QW=InGa(.47)As/In(.74)Ga(.26)As(.57)P(.43) t=60a
39 InGaAsP QW L-I L I curve 39 QW=InGa(.47)As/In(.74)Ga(.26)As(.57)P(.43) t=60a
40 Simulation of InGaN/GaN MQW LED with U-shape Contact Copyright Crosslight Software Inc. 40
41 Structure 41 MQW U-shape Contact
42 42 Physical Models Quantum drift-diffusion model for current flow/spreading (included). MQW quantum well gain/spontaneous emission model with effective mass approximation (included). 3D ray-tracing model (included). K.p model for MQW (optional). Self-heating model (optional). Polarization surface charge/self-consistent model (optional).
43 Z-segment1 43
44 Z-segment2 44
45 Band Diagram 45 May be viewed at any positions
46 3D View: Current at QW 46
47 3D View: Current below QW 47
48 Raytracing: : emission to the top 48 theta
49 Raytracing: : emission around 49 phi
50 Simulation of an Alq3/TPD OLED Copyright Crosslight Software Inc. 50
51 Structure 51
52 Coordinates 52 Metal Cathode ITO Anode
53 53 Physical Models Quantum drift-diffusion model for current flow/spreading (included). Poole-Frenkel field dependent mobility model (included). Mobility-dependent bi-molecular radiative recombination model (included). 3D ray-tracing model (included). Deep level trap model (included). Quantum tunneling model for Schottky barriers and heterojunctions (optional). Self-heating model (optional).
54 Band Diagram 54 ALQ3 organic material LUMO Fermi levels HOMO TPD organic material Energy band diagram of a OLED of TPD/ALQ3
55 3D Radiative Light Source 55 Material Interface
56 I-V V Curve 56
57 Modeling of Organic Semiconductor Electroluminescent (EL) and Absorption Spectra 57 Organic semiconductor emits light via Frenkel exciton recombination. Conventional semiconductor theories based on free-carrier/many-body interband transition are no longer valid. We have established optical spectrum model based on exciton-phonon interaction within an organic crystal.
58 Some Fitted EL Spectra 58
59 EL Spectrum Model of Alq3:DCM 59 Field=1.E8 Field=1.E7 Applied electric field ranges from 1.E7 to 1.E8 V/m
60 Conclusions Crosslight Software develops indebt 2/3D advance features of Laser, LED Modeling, PIC, along with other Quantum Transport modeling, specifically Quantum MOS for UHLSI CMOS technology. It can be interfaced with CSUPREM, for example with Monte-Carlo implantation modeling New non-semiconductor device modeling was successfully applied to the polymer materials, and OLED devices. New tools for modeling of MOCVD and semiconductor device fabrications will allow for more complementary TCAD design and Interfacing with Device Modeling Software. 60
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